NJSEMI MCR729-8 Silicon controlled rectifier Datasheet

na.
,U
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
Silicon Controlled Rectifiers
Reverse Blocking Triode Thyristors
... fast switching, high-voltage Silicon Controlled Rectifiers especially designed for
pulse modulator applications In radar and other similar equipment.
•
•
•
•
High-Voltage: VpRM =• 3<W to 800 Volts
Turn-On Times: In Nanosecond Range
Repetitive Pulse Current to 100 Amps
Stable Switching Characteristics Over an Operating Temperature Range From
-65 to +10B°C
« Pulse Repetition Rates 83 High as 10,000 pps
MCR729-5
thru
MCR729-10
SCRs
6 AMPERES RMS
300 thru 800 VOLTS
-OK
(TO-B4I
MAXIMUM RATINGS (Tj ~ 106°C unless otherwise noted,)
Characteristic
Peak Repetitive Forward Blocking Voltage, Note 1
MCR729-5
-6
-7
-8
-9
•10
Peak Repetitive Reverse Blocking Voltage, Note 1
Forward Current RMS
Average Forward Power
Peak Repetitive On-State Control (PW = 10 us)
Peak Forward Gate Power
Average Forward Gate Power
Peak Forward Gate Current
Peak Forward Gate Voltage
Peak Reverse Gate Voltage
Operating Junction Temperature Renge
Storage Temperature Range
Stud Torque
Symbol
VDRM
Value
Unit
Volts
300
400
500
600
700
800
VRRM
50
Volts
ITIRMSI
PFIAVI
ITRM
PGFM
PGFIAV)
IGFM
VGFM
VGRM
TJ
6
Amps
-65 to 4-10$
°C
Tstg
-66 to +160
•c
15
In, Ib.
5
Wens
100
Amps
20
Watts
1
Watt
6
Amps
10
Volts
10
Volts
Note 1, Ratings apply for zero or negative gate voltages. Devices shell not have a positive bias to the gate concurrently with a negative potential on
the anode. Devices should not be tested with a constant currant source for forward and reverse blocking voltages such that the applied
voltage exceeds the ratings.
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished b> N.I Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. However, NJ Seini-Conductors assumes no responsibility for any errors or omissions discovered in its use.
N.I Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
Oiitilitv
MCR729-5 thru MCR729-10
ELECTRICAL CHARACTERISTICS (Tc = 25°C unless otherwise noted.)
Symbol
Mln
Typ
MM
Unit
'DRM. 'RRM
—
0.2
2
mA
Gate Trigger Current (Continuous dc)
(Vo - 7 vdo, RL = 100 ohms)
IGT
—
10
SO
mAdc
Gate Trigger Voltage (Continuous dc)
(Vo » 7 Vdo, RL - 100 ohms)
VQT
—
0,8
1.S
Volts
IH
3
16
—
mA
Forward On Voltage
(IjM =» 6 A, PW « 1 ms. Duty Cycle « 1%)
VTM
—
—
2.6
Volts
Dynamlo Forward On Voltage
(0.6 /a after 50% pt, IQ - 200 mA, VD = Rated
nM
~~"
15
25
Volts
Characteristic
Peak Forward or Reverse Blocking Current
(Rated VDRM or VRRM, gate open) TC = 105°C
Holding Current
(VD = 7 Vdc, gate open)
VDRM. 'Fipuisel " 30 AmPs>
Turn-On Time (tj + tr)
(|Q - 200 mA, VD - Rated VDRM>
HTM = 30 Amps peak)
HTM - 100 Ampa peak)
*on
Turn-On Time Variation
(Tc - +Z6"C to + 105°C and -66"C to +25°C, ITM - 30 A)
ns
.—
200
400
—
*on
—
±600
—
ns
Pulse Turn-Off Time
I'Rpulse) " 30 Arop*- Ireversa = 0)
(Inductive charging circuit)
tree
"
15
"
us
Forward Voltage Application Rate (Linear Rate of Rise)
(Vo a Rated VDRM, gate open, TC = 105*C)
dv/dt
50
—
V/MS
«JC
—
4
•C/W
Thermal Resistance (Junction to Case)
—
-
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