ON BAS70LT1G Schottky barrier diode Datasheet

BAS70LT1G,
NSVBAS70LT1G
Schottky Barrier Diodes
These Schottky barrier diodes are designed for high speed switching
applications, circuit protection, and voltage clamping. Extremely low
forward voltage reduces conduction loss. Miniature surface mount
package is excellent for hand held and portable applications where
space is limited.
Features
• Extremely Fast Switching Speed
• Low Forward Voltage
• NSV Prefix for Automotive and Other Applications Requiring
•
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70 VOLTS SCHOTTKY
BARRIER DIODES
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
SOT−23 (TO−236)
CASE 318
STYLE 8
MAXIMUM RATINGS (TJ = 150°C unless otherwise noted)
Symbol
Value
Unit
IF
70
mA
IFSM
100
mA
Reverse Voltage
VR
70
V
Forward Power Dissipation
@ TA = 25°C
Derate above 25°C
PF
225
1.8
mW
mW/°C
−55 to +150
°C
Rating
Forward Current
Non−Repetitive Peak Forward Surge
Current (t ≤ 1.0 s)
Operating Junction and Storage
Temperature Range
TJ, Tstg
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
3
CATHODE
1
ANODE
MARKING DIAGRAM
BE M G
G
1
BE
M
G
Specific Device Code
= Date Code*
= Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may vary
depending upon manufacturing location.
ORDERING INFORMATION
Package
Shipping†
BAS70LT1G
SOT−23
(Pb−Free)
3,000 /
Tape & Reel
NSVBAS70LT1G
SOT−23
(Pb−Free)
3,000 /
Tape & Reel
Device
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 1997
October, 2016 − Rev. 10
1
Publication Order Number:
BAS70LT1/D
BAS70LT1G, NSVBAS70LT1G
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Symbol
Characteristic
Reverse Breakdown Voltage
(IR = 10 mA)
Min
Max
70
−
−
2.0
−
−
0.1
10
−
410
−
750
−
1.0
Unit
V(BR)R
Total Capacitance
(VR = 0 V, f = 1.0 MHz)
CT
Reverse Leakage
(VR = 50 V)
(VR = 70 V)
IR
Forward Voltage
(IF = 1.0 mA)
VF
Forward Voltage
(IF = 10 mA)
VF
Forward Voltage
(IF = 15 mA)
VF
V
pF
mA
mV
mV
V
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
TYPICAL CHARACTERISTICS
IR , REVERSE CURRENT (μA)
100
10
1.0
150°C
125°C
0.1
0
0.1
TA = 150°C
10
125°C
1.0
85°C
0.1
0.01
-40°C
85°C
25°C
25°C
-55°C
0.2
0.3
0.4
0.5
0.001
0.6
0.7
0.8
0.9
0
1.0
5.0
25
30
35
15
20
VR, REVERSE VOLTAGE (VOLTS)
10
VF, FORWARD VOLTAGE (VOLTS)
Figure 1. Typical Forward Voltage
1.2
1.0
0.8
0.6
0.4
0.2
0
0
5.0
10
40
45
Figure 2. Reverse Current versus Reverse
Voltage
1.4
C T, CAPACITANCE (pF)
IF, FORWARD CURRENT (mA)
100
15
20
25
30
35
40
VR, REVERSE VOLTAGE (VOLTS)
Figure 3. Typical Capacitance
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2
45
50
50
BAS70LT1G, NSVBAS70LT1G
PACKAGE DIMENSIONS
SOT−23 (TO−236)
CASE 318−08
ISSUE AR
D
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH.
MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF
THE BASE MATERIAL.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH,
PROTRUSIONS, OR GATE BURRS.
0.25
3
E
1
2
T
HE
DIM
A
A1
b
c
D
E
e
L
L1
HE
T
L
3X b
L1
VIEW C
e
TOP VIEW
A
A1
SIDE VIEW
c
SEE VIEW C
MIN
0.89
0.01
0.37
0.08
2.80
1.20
1.78
0.30
0.35
2.10
0°
MILLIMETERS
NOM
MAX
1.00
1.11
0.06
0.10
0.44
0.50
0.14
0.20
2.90
3.04
1.30
1.40
1.90
2.04
0.43
0.55
0.54
0.69
2.40
2.64
−−−
10 °
MIN
0.035
0.000
0.015
0.003
0.110
0.047
0.070
0.012
0.014
0.083
0°
INCHES
NOM
0.039
0.002
0.017
0.006
0.114
0.051
0.075
0.017
0.021
0.094
−−−
MAX
0.044
0.004
0.020
0.008
0.120
0.055
0.080
0.022
0.027
0.104
10°
STYLE 8:
PIN 1. ANODE
2. NO CONNECTION
3. CATHODE
END VIEW
RECOMMENDED
SOLDERING FOOTPRINT*
3X
2.90
3X
0.90
0.95
PITCH
0.80
DIMENSIONS: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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BAS70LT1/D
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