BAS70LT1G, NSVBAS70LT1G Schottky Barrier Diodes These Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount package is excellent for hand held and portable applications where space is limited. Features • Extremely Fast Switching Speed • Low Forward Voltage • NSV Prefix for Automotive and Other Applications Requiring • www.onsemi.com 70 VOLTS SCHOTTKY BARRIER DIODES Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant SOT−23 (TO−236) CASE 318 STYLE 8 MAXIMUM RATINGS (TJ = 150°C unless otherwise noted) Symbol Value Unit IF 70 mA IFSM 100 mA Reverse Voltage VR 70 V Forward Power Dissipation @ TA = 25°C Derate above 25°C PF 225 1.8 mW mW/°C −55 to +150 °C Rating Forward Current Non−Repetitive Peak Forward Surge Current (t ≤ 1.0 s) Operating Junction and Storage Temperature Range TJ, Tstg Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 3 CATHODE 1 ANODE MARKING DIAGRAM BE M G G 1 BE M G Specific Device Code = Date Code* = Pb−Free Package (Note: Microdot may be in either location) *Date Code orientation and/or overbar may vary depending upon manufacturing location. ORDERING INFORMATION Package Shipping† BAS70LT1G SOT−23 (Pb−Free) 3,000 / Tape & Reel NSVBAS70LT1G SOT−23 (Pb−Free) 3,000 / Tape & Reel Device †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 1997 October, 2016 − Rev. 10 1 Publication Order Number: BAS70LT1/D BAS70LT1G, NSVBAS70LT1G ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Symbol Characteristic Reverse Breakdown Voltage (IR = 10 mA) Min Max 70 − − 2.0 − − 0.1 10 − 410 − 750 − 1.0 Unit V(BR)R Total Capacitance (VR = 0 V, f = 1.0 MHz) CT Reverse Leakage (VR = 50 V) (VR = 70 V) IR Forward Voltage (IF = 1.0 mA) VF Forward Voltage (IF = 10 mA) VF Forward Voltage (IF = 15 mA) VF V pF mA mV mV V Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. TYPICAL CHARACTERISTICS IR , REVERSE CURRENT (μA) 100 10 1.0 150°C 125°C 0.1 0 0.1 TA = 150°C 10 125°C 1.0 85°C 0.1 0.01 -40°C 85°C 25°C 25°C -55°C 0.2 0.3 0.4 0.5 0.001 0.6 0.7 0.8 0.9 0 1.0 5.0 25 30 35 15 20 VR, REVERSE VOLTAGE (VOLTS) 10 VF, FORWARD VOLTAGE (VOLTS) Figure 1. Typical Forward Voltage 1.2 1.0 0.8 0.6 0.4 0.2 0 0 5.0 10 40 45 Figure 2. Reverse Current versus Reverse Voltage 1.4 C T, CAPACITANCE (pF) IF, FORWARD CURRENT (mA) 100 15 20 25 30 35 40 VR, REVERSE VOLTAGE (VOLTS) Figure 3. Typical Capacitance www.onsemi.com 2 45 50 50 BAS70LT1G, NSVBAS70LT1G PACKAGE DIMENSIONS SOT−23 (TO−236) CASE 318−08 ISSUE AR D NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF THE BASE MATERIAL. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. 0.25 3 E 1 2 T HE DIM A A1 b c D E e L L1 HE T L 3X b L1 VIEW C e TOP VIEW A A1 SIDE VIEW c SEE VIEW C MIN 0.89 0.01 0.37 0.08 2.80 1.20 1.78 0.30 0.35 2.10 0° MILLIMETERS NOM MAX 1.00 1.11 0.06 0.10 0.44 0.50 0.14 0.20 2.90 3.04 1.30 1.40 1.90 2.04 0.43 0.55 0.54 0.69 2.40 2.64 −−− 10 ° MIN 0.035 0.000 0.015 0.003 0.110 0.047 0.070 0.012 0.014 0.083 0° INCHES NOM 0.039 0.002 0.017 0.006 0.114 0.051 0.075 0.017 0.021 0.094 −−− MAX 0.044 0.004 0.020 0.008 0.120 0.055 0.080 0.022 0.027 0.104 10° STYLE 8: PIN 1. ANODE 2. NO CONNECTION 3. CATHODE END VIEW RECOMMENDED SOLDERING FOOTPRINT* 3X 2.90 3X 0.90 0.95 PITCH 0.80 DIMENSIONS: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 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