Order this document by MMBT2131T1/D SEMICONDUCTOR TECHNICAL DATA PNP Bipolar Junction Transistor 0.7 AMPERES 30 VOLTS — V(BR)CEO 342 mW (Complementary NPN Device: MMBT2132T1/T3) NOTE: Voltage and Current are negative for the PNP Transistor. MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Rating Symbol Value Unit Collector–Emitter Voltage VCEO 30 V Collector–Base Voltage VCBO 40 V Emitter–Base Voltage VEBO 5.0 V IC 700 mA Collector Current Base Current IB 350 mA Total Power Dissipation @ TC = 25°C Total Power Dissipation @ TC = 85°C Thermal Resistance — Junction to Ambient (1) PD PD RqJA 342 178 366 mW mW °C/W Total Power Dissipation @ TC = 25°C Total Power Dissipation @ TC = 85°C Thermal Resistance — Junction to Ambient (2) PD PD RqJA 665 346 188 mW mW °C/W TJ, Tstg – 55 to +150 °C Operating and Storage Temperature Range 6 1 2 5 4 3 CASE 318 F– 02, STYLE 2 SC–59 — 6 Lead COLLECTOR PINS 2, 5 BASE PIN 6 EMITTER PIN 3 PNP ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max 40 — — 30 — — 5.0 — — — — — — 1.0 10 — — 10 150 — — — — 0.25 — — 0.4 — — 1.1 — — 1.0 Unit OFF CHARACTERISTICS Collector – Base Breakdown Voltage (IC = 100 mAdc) V(BR)CBO Collector – Emitter Breakdown Voltage (IC = 10 mAdc) V(BR)CEO Emitter–Base Breakdown Voltage (IE = 100 mAdc) V(BR)EBO Collector Cutoff Current (VCB = 25 Vdc, IE = 0 Adc) (VCB = 25 Vdc, IE = 0 Adc, TA = 125°C) ICBO Emitter Cutoff Current (VEB = 5.0 Vdc, IC = 0 Adc) IEBO Vdc Vdc Vdc mAdc mAdc ON CHARACTERISTICS DC Current Gain (VCE = 3.0 Vdc, IC = 100 mAdc) hFE Collector – Emitter Saturation Voltage (IC = 500 mAdc, IB = 50 mAdc) VCE(sat) Collector – Emitter Saturation Voltage (IC = 700 mAdc, IB = 70 mAdc) VCE(sat) Base–Emitter Saturation Voltage (IC = 700 mAdc, IB = 70 mAdc) VBE(sat) Collector–Emitter Saturation Voltage (IC = 700 mAdc, VCE = 1.0 Vdc) VBE(on) Vdc Vdc Vdc Vdc Vdc 1. Minimum FR–4 or G–10 PCB, Operating to Steady State. 2. Mounted onto a 2″ square FR–4 Board (1″ sq. 2 oz Cu 0.06″ thick single sided), Operating to Steady State. This document contains information on a product under development. Motorola reserves the right to change or discontinue this product without notice. Motorola Bipolar Motorola, Inc. 1998 Power Transistor Device Data 3–1 VCE(sat), COLLECTOR–EMITTER VOLTAGE (V) VCE(sat), COLLECTOR–EMITTER VOLTAGE (V) 0.5 0.4 0.3 0.7 A 0.2 0.5 A 0.1 A 0.1 10 mA IC = 1.0 mA 0 0.000001 0.00001 0.0001 0.001 0.01 0.2 0.5 A 0.15 0.1 0.1 A 10 mA 0.05 IC = 1.0 mA 0 0.1 0.000001 0.00001 0.0001 0.001 0.1 0.01 IB, BASE CURRENT (A) IB, BASE CURRENT (A) Figure 1. Collector Saturation Region Figure 2. Collector Saturation Region 1.0 1000 VBE(sat) VOLTAGE (V) h FE , DC CURRENT GAIN VCE = 3.0 V 150°C 25°C 0.1 –40°C VCE(sat) 100 IC/IB = 10 0.01 0.01 1.0 0.1 0.01 0.001 0.1 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) Figure 3. DC Current Gain Figure 4. “ON” Voltages 1.0 1.0 0.16 T = 85°C 25°C IC/IB = 10 VCE(sat) , VOLTAGE (V) VOLTAGE (V) VBE(sat) 0.1 VCE(sat) 0.12 0°C 0.08 0.04 IC/IB = 100 0 0.01 0.001 3–2 0.01 0.1 1.0 0.01 0.1 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) Figure 5. “ON” Voltages Figure 6. Collector–Emitter Saturation Voltage Motorola Bipolar Power Transistor Device Data 1.0 0.6 1.0 T = 85°C IC/IB = 100 –40°C 25°C VBE(on) , VOLTAGE (V) VCE(sat), VOLTAGE (V) 0.5 0°C 0.4 0.3 0.2 0.75 25°C 0.5 150°C 0.25 0.1 VCE = 1.0 V 0 0 TRANSIENT THERMAL RESISTANCE (NORMALIZED) 0.1 1.0 0.0001 0.001 0.1 0.01 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) Figure 7. Collector–Emitter Saturation Voltage Figure 8. VBE(on) Voltage 1.0 1.0 0.5 0.2 0.1 0.1 P(pk) 0.05 D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 (SEE AN569) ZθJA(t) = r(t) RθJA TJ(pk) – TA = P(pk) ZθJA(t) t1 t2 0.02 DUTY CYCLE, D = t1/t2 0.01 0.01 0.0001 0.001 0.01 0.1 1.0 10 100 TIME (sec) Figure 9. Thermal Response Curve Motorola Bipolar Power Transistor Device Data 3–3 PACKAGE DIMENSIONS A NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. L 6 5 4 2 3 B S 1 D G M J C 0.05 (0.002) K H CASE 318F–02 ISSUE C DIM A B C D G H J K L M S INCHES MIN MAX 0.1063 0.1220 0.0512 0.0669 0.0394 0.0511 0.0098 0.0157 0.0335 0.0413 0.0005 0.0040 0.0040 0.0102 0.0079 0.0236 0.0493 0.0649 0_ 10 _ 0.0985 0.1181 STYLE 2: PIN 1. 2. 3. 4. 5. 6. MILLIMETERS MIN MAX 2.70 3.10 1.30 1.70 1.00 1.30 0.25 0.40 0.85 1.05 0.013 0.100 0.10 0.26 0.20 0.60 1.25 1.65 0_ 10 _ 2.50 3.00 NO CONNECTION COLLECTOR EMITTER NO CONNECTION COLLECTOR BASE Motorola reserves the right to make changes without further notice to any products herein. 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