Filtronic FMA219 X-band lna mmic Datasheet

FMA219
Datasheet v3.0
X-BAND LNA MMIC
FEATURES:
•
•
•
•
•
•
LAYOUT:
7.0 – 11.0 GHz Operating Bandwidth
1.1 dB Noise Figure
21 dB Small-Signal Gain
12 dBm Output Power
+3V Single Bias Supply
DC De-coupled Input and Output Ports
GENERAL DESCRIPTION:
The FMA219 is a 2-stage, reactively matched
pHEMT low-noise MMIC amplifier designed for
use over 7.0 to 11.0 GHz. The amplifier
requires a single +3V supply and one off-chip
component for supply de-coupling. Both the
input and output ports are DC de-coupled.
Grounding of the amplifier is provided by
plated thru-vias to the bottom of the die, no
additional ground is required. The amplifier is
unconditionally stable over all load states (-45
to +85°C), and conditionally stable if the input
port is open-circuited.
TYPICAL APPLICATIONS:
•
•
Low noise front end amplifiers
General X-Band gain block
ELECTRICAL SPECIFICATIONS:
PARAMETER
SYMBOL
CONDITIONS
MIN
Operating Frequency Bandwidth
BW
VDD = +3 V IDD = IOP
7
Small Signal Gain
S21
VDD = +3 V IDD = IOP
19
Operating Current
IOP
No RF input
50
Small Signal Gain Flatness
∆S21
Noise Figure
NF
3rd Order Intermodulation Distortion
IMD
MAX
UNITS
11
GHz
21
23
dB
65
80
mA
VDD = +3 V IDD = IOP
±0.5
±0.8
VDD = +3 V, IDD = IOP
1.1
1.4
Power at 1dB Compression
P1dB
VDD = +3 V
VDD = +3 V, IDD = IOP
POUT = +1.5 dBm SCL
Input Return Loss
S11
VDD = +3 V IDD = IOP
Input Return Loss @ 9.5GHz + 10GHz
S11(9.5+10GHz)
VDD = +3 V IDD = IOP
Output Return Loss
S22
VDD = +3 V IDD = IOP
Reverse Isolation
S12
VDD = +3 V IDD = IOP
11.5
TYP
dB
-47
dBc
12.5
dBm
-7
-3
dB
-4
dB
-16
-10
dB
-40
-30
dB
Note: TAMBIENT = 22°C
1
Tel: +44 (0) 1325 301111
Specifications subject to change without notice
Filtronic Compound Semiconductors Ltd
Fax: +44 (0) 1325 306177
Email: [email protected]
Website: www.filtronic.com
FMA219
Datasheet v3.0
1
ABSOLUTE MAXIMUM RATING :
PARAMETER
SYMBOL
TEST CONDITIONS
ABSOLUTE MAXIMUM
Supply Voltage
VDD
For any operating current
6V
Supply Current
IDD
For VDD < 5V
100mA
RF Input Power
PIN
For standard bias conditions
5dBm
TSTG
Non-Operating Storage
-40°C to 150°C
PTOT
See De-Rating Note below
750mW
Comp.
Under any bias conditions
5dB
ΘJC
750mW dissipation, heatsink temp 22°C
175°C/W
Storage Temperature
Total Power Dissipation
2,3
Gain Compression
Thermal Resistance
4
Notes:
1. TAmbient = 22°C unless otherwise noted; exceeding any one of these absolute maximum ratings may cause
permanent damage to the device
2. Total Power Dissipation is defined as: PTOT = PDC + PIN – POUT
where PDC = DC Bias Power, PIN = RF Input Power, POUT = RF Output Power
Total Power Dissipation shall be de-rated above 22°C as follows:
PTOT = (150 – TCASE ) / ΘJC W
where TCASE = Temperature of the on the underside of the package or substrate
3. The quoted Thermal Resistance value is a worst-case figure assuming Gold/Tin die attach onto a Copper
substrate. The use of epoxy die attach and substrate materials of lower thermal conductivity will increase the
Thermal Resistance. Further information and assistance is available on request.
4. ΘJC increases linearly from 175°C/W at a TCASE of 22°C to 210°C/W at a TCASE of 145°C
PAD LAYOUT:
A
PAD
NAME
DESCRIPTION
PIN
COORDINATES
(µm)
IN
RFIN
102, 888
ROUT
1527, 843
Drain Voltage
1177, 103
B
A
C
B
VD
Note: Co-ordinates are referenced from the bottom
left hand corner of the die to the centre of bond pad
opening
C
DIE SIZE
(µm)
DIE THICKNESS (µm)
MIN. BOND PAD PITCH
(µm)
MIN. BOND PAD OPENING
(µm x µm )
1624 x 1624
100
>150
92 x 92
2
Tel: +44 (0) 1325 301111
Specifications subject to change without notice
Filtronic Compound Semiconductors Ltd
Fax: +44 (0) 1325 306177
Email: [email protected]
Website: www.filtronic.com
FMA219
Datasheet v3.0
TYPICAL MEASURED PERFORMANCE ON WAFER:
Note: Measurement Conditions TAMBIENT = 22°C unless otherwise stated
RF PERFORMANCE (VDD = +3V, IDD = IOP)
NOISE FIGURE
FMA219BF NOISE FIGURE
FMA219 FREQUENCY RESPONSE
1.4
1.3
20
1.2
S21
16
1.1
12
Noise Figure (dB)
SSG, Input / Output Return Loss (dB)
24
8
4
0
-4
1.0
0.9
0.8
0.7
-8
-12
0.6
-16
0.5
-20
0.4
5
6
7
8
9
10
11
12
13
14
15
7
8
9
10
11
Frequency (GHz)
Frequency [GHz]
Note: Multiple traces show typical die variation
across a 150mm (6") wafer. Effect of typical
bond wire inductances (25µm dia. 1mm
length, 2 each on input and output ports) is
less than a 0.5dB decrease in S21 (@11GHz),
and no measurable effect on noise figure.
3RD-ORDER INTERMODULATION
POWER TRANSFER CHARACTERISTIC
FMA219BF POWER TRANSFER CHARACTERISTIC
IMPRODUCTSvs. INPUT POWERAT 9.0GHz
4.0
16.0
-15.00
Pout@7GHz
14.0
3.5
11.0
Pout@9GHz
Pout
Pout@11GHz
Output Power (dBm)
Comp@9GHz
10.0
2.5
Comp@11GHz
8.0
2.0
6.0
1.5
4.0
1.0
2.0
0.5
-21.0
-19.0
-20.00
Ou 9.0
tp
ut
Po
7.0
we
r
(d
B 5.0
m)
-17.0
-15.0
-13.0
-11.0
-9.0
-7.0
-5.0
IM
Pr
od
uc
-30.00 ts
(d
Bc
-35.00 )
-25.00
3.0
1.0
-19.0
0.0
0.0
-23.0
Im3, dBc
3.0
Comp@7GHz
Compression Point, (dB)
12.0
-40.00
-45.00
-17.0
-15.0
-3.0
-13.0
-11.0
-9.0
-7.0
Input Power (dBm)
Pin (dBm)
Note: Equivalent output IP3 performance
exceeds 24dBm, input IP3 is typically ≥+2dBm.
3
Tel: +44 (0) 1325 301111
Specifications subject to change without notice
Filtronic Compound Semiconductors Ltd
Fax: +44 (0) 1325 306177
Email: [email protected]
Website: www.filtronic.com
FMA219
Datasheet v3.0
S-PARAMETERS (Vdd= 3.0V; Idd= 72mA):
FREQ-GHZ
1
1.245
1.49
1.735
1.98
2.225
2.47
2.715
2.96
3.205
3.45
3.695
3.94
4.185
4.43
4.675
4.92
5.165
5.41
5.655
5.9
6.145
6.39
6.635
6.88
7.125
7.37
7.615
7.86
8.105
8.35
8.595
8.84
9.085
9.33
9.575
9.82
10.065
10.31
10.555
10.8
11.045
11.29
11.535
11.78
12.025
12.27
12.515
12.76
13.005
13.25
13.495
13.74
13.985
14.23
14.475
14.72
14.965
15.21
15.455
15.7
15.945
S11MAG
0.974
0.968
0.963
0.959
0.958
0.96
0.965
0.973
0.958
0.934
0.95
0.968
0.988
1.007
1.035
1.069
0.951
0.945
1.021
1.034
1.004
0.927
0.807
0.658
0.504
0.367
0.268
0.227
0.24
0.283
0.337
0.388
0.435
0.478
0.514
0.545
0.572
0.593
0.608
0.618
0.626
0.63
0.627
0.622
0.615
0.604
0.589
0.575
0.561
0.544
0.524
0.506
0.488
0.469
0.451
0.434
0.418
0.397
0.378
0.361
0.348
0.333
S11ANG
-106.62
-125.3
-141.67
-156.2
-169.47
178.08
166.1
154.02
141.23
131.54
121.28
109.94
97.76
84.85
70.66
54.25
28.15
29.43
10.5
-9.95
-31.51
-53.66
-75.49
-95.15
-111.08
-120.38
-119.71
-109.46
-99.07
-96.28
-99.06
-105.01
-111.94
-119.7
-127.72
-135.89
-143.88
-151.64
-159.12
-166.45
-173.69
179.26
172.58
166.17
160.01
154.16
148.47
142.93
137.71
133.07
128.55
124.13
119.86
115.96
112.04
108.26
105.67
102.87
99.79
96.52
93.94
92.37
S21MAG
0.068
0.079
0.092
0.096
0.1
0.104
0.112
0.132
0.148
0.171
0.251
0.367
0.535
0.778
1.151
1.771
2.926
2.061
3.203
4.536
6.024
7.547
8.943
10.049
10.815
11.268
11.522
11.667
11.737
11.775
11.806
11.826
11.843
11.844
11.852
11.846
11.827
11.781
11.726
11.649
11.557
11.432
11.269
11.091
10.896
10.683
10.437
10.175
9.907
9.609
9.318
9.005
8.698
8.368
8.03
7.686
7.342
7.02
6.696
6.365
6.054
5.737
S21ANG
-115.04
-144.82
-165.53
168.17
145.39
123.02
99.66
73.18
45.25
31.12
16.56
0.21
-15.43
-30.42
-45.48
-62.52
-102.1
-105.45
-113.56
-131.16
-151.54
-173.34
164.5
142.79
122.24
103.33
86.07
70.26
55.61
41.94
28.96
16.67
4.87
-6.52
-17.58
-28.41
-39.01
-49.39
-59.5
-69.51
-79.38
-89.1
-98.68
-108.08
-117.3
-126.44
-135.33
-144.15
-152.79
-161.3
-169.65
-177.82
173.99
166.14
158.31
150.71
143.44
136.17
129.12
122.22
115.62
109.22
S12MAG
0
0
0.001
0.001
0
0.001
0.001
0.001
0.001
0.001
0.001
0.001
0.002
0.002
0.002
0.003
0.009
0.004
0.003
0.004
0.005
0.006
0.007
0.009
0.01
0.01
0.011
0.011
0.012
0.012
0.013
0.013
0.014
0.014
0.015
0.015
0.016
0.016
0.016
0.017
0.017
0.017
0.017
0.018
0.017
0.018
0.018
0.018
0.018
0.018
0.018
0.018
0.018
0.018
0.018
0.017
0.017
0.017
0.017
0.017
0.017
0.017
S12ANG
107.89
96.58
76.88
55.16
53.04
46.09
23.97
42.06
52.06
18.31
-4.07
3.18
-9.97
-30.48
-27.77
-49.44
-120.99
118.66
65.1
24.75
-1.95
-23.74
-45.39
-65.6
-82.43
-97.87
-113.2
-125.36
-137.61
-146.86
-157.24
-165.6
-174.09
178.62
170.72
163.57
157.72
150.1
143.61
136.33
128.78
123.33
117.93
111.68
107.41
101.82
96.04
91.31
85.97
82.16
77.5
73.7
70.16
64.24
61.86
57.54
54.93
52.45
48.74
45.51
41.29
40.04
S22MAG
0.74
0.641
0.568
0.514
0.474
0.445
0.421
0.402
0.386
0.37
0.356
0.342
0.328
0.312
0.296
0.281
0.305
0.259
0.222
0.19
0.156
0.12
0.085
0.055
0.032
0.013
0.003
0.018
0.033
0.049
0.065
0.081
0.098
0.114
0.129
0.144
0.158
0.171
0.183
0.193
0.202
0.208
0.213
0.217
0.22
0.222
0.225
0.229
0.235
0.244
0.254
0.266
0.282
0.3
0.321
0.344
0.367
0.388
0.409
0.429
0.45
0.471
S22ANG
-117.91
-135.03
-147.1
-156.86
-164.33
-170.58
-176
179.01
174.19
169.6
165.04
160.47
155.92
151.5
147.18
143.68
140.84
124.29
118.27
111.03
103.14
95.2
88.64
84.7
83.47
87.06
-101.15
-91.84
-91.39
-91.83
-92.12
-93.19
-94.77
-96.84
-99.55
-102.25
-104.77
-107.68
-110.27
-112.92
-115.51
-117.39
-119.05
-120.38
-121.13
-121.27
-120.82
-120.02
-118.85
-117.85
-116.67
-115.65
-114.8
-114.41
-114.35
-115.16
-116.62
-118.17
-120.11
-121.83
-123.8
-125.99
4
Tel: +44 (0) 1325 301111
Specifications subject to change without notice
Filtronic Compound Semiconductors Ltd
Fax: +44 (0) 1325 306177
Email: [email protected]
Website: www.filtronic.com
FMA219
Datasheet v3.0
RECOMMENDED ASSEMBLY SCHEMATIC:
Input and output thin film
substrates with 50Ω microstrip
transmission lines. Substrate
thickness 250µm or thinner is
recommended.
75µm nominal gap on
each side
25µm dia. Au wire (x2) on
input and output ports, less
than 1000µm length each
Note: The supply de-coupling
capacitor (150 pF recommended
value) should be placed as close
to the MMIC as practical.
150pF
capacitor
To +VDD
250µm Au ribbon
recommended
should be observed at all stages of storage,
handling, assembly, and testing.
These
devices should be treated as Class 0 (0-250 V)
as defined in JEDEC Standard No. 22-A114.
Further information on ESD control measures
can be found in MIL-STD-1686 and MILHDBK-263.
PREFERRED ASSEMBLY INSTRUCTIONS:
GaAs devices are fragile and should be
handled with great care. Specially designed
collets should be used where possible.
The back of the die is metallised and the
recommended mounting method is by the use
of
conductive
epoxy
following
the
manufacturer’s
recommended
curing
temperature.
For eutectic 80/20 gold/tin
solder, use a stage temperature of 280-300°C
for a maximum time of 60s. Use forming gas
(90%N2, 10% H2) for best results.
APPLICATION NOTES & DESIGN DATA:
Application Notes and design data including Sparameters are available on request
DISCLAIMERS:
Recommended lead bond technique is
thermocompression wedge bonding with 25µm
diameter wire. The bond tool force shall be
35-38g. Bonding stage temperature shall be
230-240°C, heated tool (150-160°C) is
recommended.
Ultrasonic bonding is not
recommended.
This product is not designed for use in any
space based or life sustaining/supporting
equipment.
ORDERING INFORMATION:
HANDLING
PRECAUTIONS:
PART NUMBER
DESCRIPTION
FMA219
Die
To avoid damage to the devices care should
be exercised during handling.
Proper
Electrostatic Discharge (ESD) precautions
5
Tel: +44 (0) 1325 301111
Specifications subject to change without notice
Filtronic Compound Semiconductors Ltd
Fax: +44 (0) 1325 306177
Email: [email protected]
Website: www.filtronic.com
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