DATA SHEET PHOTO DIODE NDL5551P Series 1 000 to 1 600 nm OPTICAL FIBER COMMUNICATIONS φ 50 µ m InGaAs AVALANCHE PHOTO DIODE MODULE DESCRIPTION NDL5551P Series is InGaAs avalanche photo diode modules with multimode fiber. They are designed for detectors of long wavelength transmission systems and cover the wavelength range between 1 000 and 1 600 nm. FEATURES • Smaller dark current ID = 5 nA • High quantum efficiency η = 90 % @ λ = 1 300 nm, M = 1 • High Speed response fC = 1.2 G H z @M = 20 • Detecting area size φ 5 0 µm • Coaxial module with multimode fiber (GI-50/125) • NDL5551P1 and NDL5551P2 have a flange. η = 77 % @ λ = 1 550 nm, M = 1 • PACKAGE DIMENSIONS in millimeters NDL5551P1 Optical Fiber: GI-50/125 Length: 1 m MIN. Shrunk tube φ 2.0 2 3 1 φ 2.0 18.0±0.1 30.0 MAX. 12.5 MIN. φ 6.0 +0.0 –0.1 2–φ2.5 2 3 1 φ 2.0 12.0±0.1 LEAD CONNECTION 1 Anode (Negative) 2 Cathode (Positive) 3 Case φ2.5 30.0 MAX. 12.5 MIN. 4.0±0.1 2–φ2.2 4.0±0.3 1 3.9±0.5 6.9±0.3 φ 6.0 +0.0 –0.1 7.0±0.3 1.5 2 3 3.0±0.3 φ 0.45 6.0 φ2.5 14.0±0.1 30.0 MAX. φ 6.0+0.0 –0.1 12.5 MIN. 6.9±0.3 φ 2.5 Shrunk tube 2.5±0.1 0.5±0.1 Shrunk tube +0.0 –0.1 NDL5551P2 Optical Fiber: GI-50/125 Length: 1 m MIN. 7.0±0.15 NDL5551P Optical Fiber: GI-50/125 Length: 1 m MIN. 16.0±0.2 3 2 1 The information in this document is subject to change without notice. Document No. P11103EJ2V0DS00 (2nd edition) (Previous No. LD-2371) Date Published March 1996 P Printed in Japan The mark • shows major revised points. © 1994 NDL5551P Series • ORDERING INFORMATION Part Number Available Connector NDL5551P Without Connector no flange NDL5551PC With FC-PC Connector NDL5551PD With SC-PC Connector NDL5551P1 Without Connector NDL5551P1C With FC-PC Connector NDL5551P1D With SC-PC Connector NDL5551P2 Without Connector NDL5551P2C With FC-PC Connector NDL5551P2D With SC-PC Connector flat mount flange vertical flange ABSOLUTE MAXIMUM RATINGS (TC = 25 °C) Parameter Symbol Ratings Unit Forward Current IF 10 mA Reverse Current IR 0.5 mA Operating Case Temperature TC −40 to +85 °C Storage Temperature Tstg −40 to +85 °C ELECTRO-OPTICAL CHARACTERISTICS (TC = 25 °C) Parameter Reverse Breakdown Voltage Symbol V(BR)R Conditions ID = 100 µ A MIN. TYP. MAX. Unit 50 70 100 V Temperature Coefficient of Reverse Breakdown Voltage δ Dark Current ID VR = V(BR)R × 0.9 5 30 nA Multiplied Dark Current IDM M = 2 to 10 1 5 nA Terminal Capacitance Ct VR = V(BR)R × 0.9, f = 1 MHz 0.4 0.75 pF Cut-off Frequency fC M = 10 *1 0.2 1 M = 20 Quantum Efficiency Responsivity Multiplication Factor η S M 1.5 76 90 λ = 1 550 nm, M = 1 65 77 λ = 1 300 nm, M = 1 0.8 0.94 λ = 1 550 nm, M = 1 0.81 0.96 30 40 VR = V (@ ID = 1 µ A ) Excess Noise Exponent x λ = 1 300 nm, 1550 nm, IP0 = 1.0 µ A Excess Noise Factor F M = 10, f = 35 MHz, B = 1 MHz *1: δ = 2 V(BR)R < 25 °C + ∆T °C > −V(BR)R < 25 °C > ∆T °C ⋅ V(BR)R < 25 °C > GHz 1.2 λ = 1 300 nm, M = 1 λ = 1 300 nm, IP0 = 1.0 µ A %/°C 0.7 5 % A/W NDL5551P Series • WAVELENGTH DEPENDENCE OF QUANTUM EFFICIENCY Quantum Efficiency η (%) 100 TC = 25 ˚C 80 60 40 20 0 0.9 1.0 1.1 1.2 1.3 1.4 1.5 Wavelength λ ( µ m) 1.6 1.7 Responsivity (Relative Value) ∆ S/S (%) TYPICAL CHARACTERISTICS TEMPERATURE DEPENDENCE OF RESPONSIVITY 10 λ = 1 300 nm 0 –10 –60 –40 –20 0 40 60 80 100 20 Operating Case Temperature TC (˚C) DARK CURRENT vs. REVERSE VOLTAGE DARK CURRENT and PHOTO CURRENT vs. REVERSE VOLTAGE 10–3 10–6 Dark Current ID (A) λ = 1 300 nm IP0 = 1.0 µ A TC = 25 ˚C 10–4 Iph –5 TC = 85 ˚C 10–8 TC = 65 ˚C 10–9 TC = 25 ˚C TC = –20 ˚C 10–10 0 20 10–6 40 60 80 Reverse Voltage VR (V) 100 MULTIPLICATION FACTOR vs. REVERSE VOLTAGE 10–7 103 Multiplication Factor M Dark Current, Photo Current ID, lph (A) 10 10–7 10–8 ID 10–9 10–10 0 20 40 60 80 Reverse Voltage VR (V) 100 TC = 65 ˚C 102 TC = –20 ˚C TC = 25 ˚C 101 TC = 85 ˚C 100 0 20 40 60 80 Reverse Voltage VR (V) 100 3 TEMPERATURE DEPENDENCE OF DARK CURRENT and MULTIPLIED DARK CURRENT 10–6 FREQUENCY RESPONSE λ = 1 300 nm RL = 50 Ω M=8 TC = 25 ˚C λ = 1 300 nm ID @ VR = 0.9 V(BR)R 10–7 IDM 10–8 10–9 Response (3 dB/div.) Dark Current, Multiplied Dark Current ID, IDM (A) NDL5551P Series 10–10 1 10 Multiplication Factor M 100 EXCESS NOISE FACTOR vs. MULTIPLICATION FACTOR Excess Noise Factor F 100 0.5 0.4 20 10 5 2 1 4 1 300 nm ( ), 1 550 nm ( ) f = 35 MHz, B = 1 MHz 50 1 2 5 10 20 Multiplication Factor M 50 100 Terminal Capacitance Ct (pF) Cut-off Frequency fC (GHz) TC = 25 ˚C 1 0.1 2.0 3.0 4.0 Frequency f (GHz) 5.0 TERMINAL CAPACITANCE vs. REVERSE VOLTAGE CUT-OFF FREQUENCY vs. MULTIPLICATION FACTOR 10 1.0 0 10–11 –60 –40 –20 0 20 40 60 80 100 Operating Case Temperature TC (˚C) 2 1 0.5 0.2 0.1 1 2 5 10 20 50 Reverse Voltage VR (V) 100 NDL5551P Series • HANDLING PRECAUTION for PD/APD MODULE The NEC PD/APD module has heat shrink tubing to protect the ferrule edge (*1) and the junction between the ferrule and the module body (*2). In order to avoid breaking the fiber and/or optical coupling degradation, NEC recommends the following handling precautions. 1. Do not make the fiber bend radius less than 30 mm (*3). 2. Do not bend the fiber within the 18 mm section from the module body (*4). 3. Do not stress the ferrule with a lateral force exceeding 500 g (*5). 30 m m fiber in m ) (*3 ferrule (*5) 18 mm min. (*4) (*1) (*2) module body 5 NDL5551P Series • InGaAs APD/PD FAMILY Features Packages TO-18 type Can APD φ30 µ m φ50 µ m (for 2.5 Gb/s) (for 2.5 Gb/s) NDL5530 PIN-PD φ50 µ m φ80 µ m φ50 µ m φ80 µ m Remarks (for 2.5 Gb/s) NDL5500 NDL5510 3 pins *3,4 NDL5490L TO-18 type Can NDL5405L 3 pins NDL5471RC 3 pins NDL5471RD RC: FC receptacle with Micro Lens Small Can *3,4 NDL5490 NDL5531 φ5.6 µ m Chip on Carrier NDL5530C NDL5520C NDL5500C NDL5510C Receptacle Module RD: SC receptacle *2 Coaxial Module with NDL5521P NDL5551P NDL5561P MMF NDL5521P1 NDL5551P1 NDL5561P1 NDL5521P2 NDL5551P2 NDL5561P2 NDL5553P NDL5461P P1, P2: With flange *2 NDL5461P1 *2 NDL5461P2 *1 *1 NDL5553P1 *1 NDL5553P2 NDL5553PS Coaxial Module with SMF *1 NDL5481P *5 NDL5553P1S *1 NDL5481P1 NDL5553P2S *1 *5 NDL5481P2 *5 14-pin DIP Module NDL5506P ∆T = 45 K (@ Ic = 1.1 A) with TEC NDL5506PS PS: With SMF 6-pin BFY Module NDL5522P NDL5422P with MMF *1 For OTDR *2 With GI-62.5/125 *3 Under development *4 Internal pre-amplifier for 1Gb/s *5 For analog application (optical CATV) Remark Modules are available with FC-PC connector or optional SC-PC connector. 6 With Pre-AMP NDL5551P Series REFERENCE Document Name Document No. NEC semiconductor device reliability/quality control system IEI-1205 Quality grade on NEC semiconductor devices IEI-1209 Semiconductor device mounting technology manual C10535E Semiconductor device package manual IEI-1213 Guide to quality assurance for semiconductor devices MEI-1202 Semiconductor selection guide X10679E 7 NDL5551P Series CAUTION Within this device there exists GaAs (Gallium Arsenide) material which is a harmful substance if ingested. Please do not under any circumstance break the hermetic seal. The export of this product from Japan is prohibited without governmental license. To export or re-export this product from a country other than Japan may also be prohibited without a license from that country. Please call an NEC sales representative. No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others. While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices, the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or property arising from a defect in an NEC semiconductor device, customer must incorporate sufficient safety measures in its design, such as redundancy, fire-containment, and anti-failure features. NEC devices are classified into the following three quality grades: "Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on a customer designated "quality assurance program" for a specific application. The recommended applications of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device before using it in a particular application. Standard: Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. The quality grade of NEC devices in "Standard" unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact NEC Sales Representative in advance. Anti-radioactive design is not implemented in this product. M4 94. 11