LM614
Quad Operational Amplifier and Adjustable Reference
General Description
Features
The LM614 consists of four op-amps and a programmable
voltage reference in a 16-pin package. The op-amp
out-performs most single-supply op-amps by providing
higher speed and bandwidth along with low supply current.
This device was specifically designed to lower cost and
board space requirements in transducer, test, measurement
and data acquisition systems.
Combining a stable voltage reference with four wide output
swing op-amps makes the LM614 ideal for single supply
transducers, signal conditioning and bridge driving where
large common-mode-signals are common. The voltage reference consists of a reliable band-gap design that maintains
low dynamic output impedance (1Ω typical), excellent initial
tolerance (0.6%), and the ability to be programmed from
1.2V to 6.3V via two external resistors. The voltage reference is very stable even when driving large capacitive loads,
as are commonly encountered in CMOS data acquisition
systems.
As a member of National’s new Super-Block™ family, the
LM614 is a space-saving monolithic alternative to a multichip
solution, offering a high level of integration without sacrificing
performance.
Op Amp
n Low operating current: 300 µA
n Wide supply voltage range: 4V to 36V
n Wide common-mode range: V− to (V+− 1.8V)
n Wide differential input voltage: ± 36V
n Available in plastic package rated for Military
Temperature Range Operation
Reference
n Adjustable output voltage: 1.2V to 6.3V
n Tight initial tolerance available: ± 0.6%
n Wide operating current range: 17 µA to 20 mA
n Tolerant of load capacitance
Applications
n
n
n
n
Transducer bridge driver and signal processing
Process and mass flow control systems
Power supply voltage monitor
Buffered voltage references for A/D’s
Connection Diagram
DS009326-1
Ordering Information
Reference
Tolerance & VOS
± 0.6%@
Temperature Range
Military
Industrial
Commercial
−55˚C ≤ TA ≤ +125˚C
−40˚C ≤ TA ≤ +85˚C
0˚C ≤ TA ≤ +70˚C
LM614AMN
LM614AIN
—
80 ppm/˚C max
VOS ≤ 3.5 mV max
LM614AMJ/883
—
—
16-pin
N16E
16-pin
J16A
Ceramic DIP
LM614MN
LM614BIN
LM614CN
150 ppm/˚C max
VOS ≤ 5.0 mV
NSC
Drawing
Molded DIP
(Note 13)
± 2.0%@
Package
16-pin
N16E
Molded DIP
—
LM614WM
LM614CWM
16-pin Wide
M16B
Surface Mount
Super-Block™ is a trademark of National Semiconductor Corporation.
© 1999 National Semiconductor Corporation
DS009326
www.national.com
LM614 Quad Operational Amplifier and Adjustable Reference
May 1998
Absolute Maximum Ratings (Note 1)
36V (Max)
−0.3V (Min)
Maximum Junction Temperature
Thermal Resistance, Junction-to-Ambient (Note 4)
N Package
WM Package
Soldering Information (Soldering, 10 seconds)
N Package
WM Package
ESD Tolerance (Note 5)
± 20 mA
Operating Temperature Range
If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales Office/
Distributors for availability and specifications.
Voltage on Any Pins except VR
(referred to V− pin)
(Note 2)
(Note 3)
Current through Any Input Pin &
VR Pin
Differential Input Voltage
Military and Industrial
Commercial
Storage Temperature Range
260˚C
220˚C
± 1kV
−55˚C ≤ TJ ≤ +125˚C
LM614AM, LM614M
0˚C ≤ TJ ≤ +70˚C
LM614C
−65˚C ≤ TJ ≤ +150˚C
100˚C
150˚C
−40˚C ≤ TJ ≤ +85˚C
LM614AI, LM614I, LM614BI
± 36V
± 32V
150˚C
Electrical Characteristics
These specifications apply for V− = GND = 0V, V+ = 5V, VCM = VOUT = 2.5V, IR = 100 µA, FEEDBACK pin shorted to GND,
unless otherwise specified. Limits in standard typeface are for TJ = 25˚C; limits in boldface type apply over the Operating
Temperature Range .
Symbol
Parameter
Conditions
Typical
(Note 6)
LM614AM
LM614M
LM614AI
LM614BI
Limits
LM614I
(Note 7)
LM614C
Units
Limits
(Note 7)
IS
VS
Total Supply
RLOAD = ∞,
450
940
1000
µA max
Current
4V ≤ V+ ≤ 36V (32V for LM614C)
550
1000
1070
µA max
2.2
2.8
2.8
V min
2.9
3
3
V min
46
36
32
V max
43
36
32
V max
Supply Voltage Range
OPERATIONAL AMPLIFIER
VOS1
VOS2
VOS Over Supply
4V ≤ V+ ≤ 36V
1.5
3.5
5.0
mV max
2.0
6.0
7.0
mV max
VOS Over VCM
(4V ≤ V+ ≤ 32V for LM614C)
VCM = 0V through VCM =
1.0
3.5
5.0
mV max
(V+ − 1.8V), V+ = 30V
1.5
6.0
7.0
mV max
(Note 7)
15
Average VOS Drift
µV/˚C
max
IB
Input Bias Current
10
25
35
nA max
11
30
40
nA max
IOS
Input Offset Current
0.2
4
4
nA max
0.3
5
5
nA max
Average Offset
Drift Current
RIN
Input Resistance
4
pA/˚C
Differential
1800
MΩ
Common-Mode
3800
MΩ
5.7
pF
CIN
Input Capacitance
en
Voltage Noise
Common-Mode Input
f = 100 Hz, Input Referred
In
Current Noise
f = 100 Hz, Input Referred
58
Common-Mode
V+ = 30V, 0V ≤ VCM ≤ (V+ − 1.8V),
CMRR = 20 log (∆VCM/∆VOS)
95
80
75
dB min
90
75
70
dB min
CMRR
Rejection Ratio
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2
74
Electrical Characteristics
(Continued)
These specifications apply for V− = GND = 0V, V+ = 5V, VCM = VOUT = 2.5V, IR = 100 µA, FEEDBACK pin shorted to GND,
unless otherwise specified. Limits in standard typeface are for TJ = 25˚C; limits in boldface type apply over the Operating
Temperature Range .
Symbol
Parameter
Conditions
Typical
(Note 6)
LM614AM
LM614M
LM614AI
LM614BI
Limits
LM614I
(Note 7)
LM614C
Units
Limits
(Note 7)
OPERATIONAL AMPLIFIER
PSRR
Power Supply
Rejection Ratio
AV
Open Loop
4V ≤ V+ ≤ 30V, VCM = V+/2,
PSRR = 20 log (∆V+/∆VOS)
RL = 10 kΩ to GND, V+ = 30V,
110
80
75
dB min
100
75
70
dB min
500
100
94
V/mV
50
40
40
min
± 0.70
± 0.65
± 0.55
± 0.45
± 0.50
± 0.45
V/µs
SR
Slew Rate
5V ≤ VOUT ≤ 25V
V+ = 30V (Note 8)
GBW
Gain Bandwidth
CL = 50 pF
Voltage Gain
0.8
MHz
0.52
VO1
Output Voltage
Swing High
VO2
Output Voltage
Swing Low
IOUT
Output Source
ISINK
Output Sink
Current
ISHORT
Short Circuit Current
RL = 10 kΩ to GND
V+ = 36V (32V for LM614C)
RL = 10 kΩ to V+
V+ = 36V (32V for LM614C)
VOUT = 2.5V, V+IN = 0V,
V−IN = −0.3V
VOUT = 1.6V, V+IN = 0V,
V−IN = 0.3V
MHz
V+ − 1.4
V+ − 1.7
V+ − 1.8
V min
V+ − 1.6
V+ − 1.9
V+ − 1.9
V min
V− + 0.8
V− + 0.9
V− + 0.95
V max
V− + 0.9
V− + 1.0
V− + 1.0
V max
25
20
16
mA min
15
13
13
mA min
17
14
13
mA min
9
8
8
mA min
VOUT = 0V, V+IN = 3V,
V−IN = 2V, Source
30
50
50
mA max
40
60
60
mA max
VOUT = 5V, V+IN = 2V,
V−IN = 3V, Sink
30
60
70
mA max
32
80
90
mA max
1.244
1.2365
1.2191
V min
1.2515
1.2689
V max
( ± 0.6%)
( ± 2.0%)
80
150
VOLTAGE REFERENCE
VR
Voltage Reference
Average Temperature
(Note 9)
(Note 10)
10
Drift
Hysteresis
max
(Note 11)
3.2
VR Change
VR(100 µA) − VR(17 µA)
µV/˚C
0.05
1
1
0.1
1.1
1.1
mV max
VR(10 mA) − VR(100 µA)
1.5
5
5
mV max
(Note 12)
2.0
5.5
5.5
mV max
∆VR(10→0.1 mA)/9.9 mA
0.2
0.56
0.56
Ω max
∆VR(100→17 µA)/83 µA
0.6
13
13
Ω max
VR Change
VR(Vro
2.5
7
7
mV max
with High VRO
(5.06V between Anode and
2.8
10
10
mV max
with Current
R
PPM/˚C
Resistance
= Vr)
− VR(Vro
= 6.3V)
mV max
FEEDBACK)
3
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Electrical Characteristics
(Continued)
These specifications apply for V− = GND = 0V, V+ = 5V, VCM = VOUT = 2.5V, IR = 100 µA, FEEDBACK pin shorted to GND,
unless otherwise specified. Limits in standard typeface are for TJ = 25˚C; limits in boldface type apply over the Operating
Temperature Range .
Symbol
Parameter
Conditions
Typical
(Note 6)
LM614AM
LM614M
LM614AI
LM614BI
Limits
LM614I
(Note 7)
LM614C
Units
Limits
(Note 7)
VOLTAGE REFERENCE
VR Change with
V+ Change
IFB
FEEDBACK Bias
VR(V + = 5V) − VR(V + = 36V)
(V+ = 32V for LM614C)
0.1
1.2
1.2
0.1
1.3
1.3
mV max
VR(V +
0.01
1
1
mV max
0.01
1.5
1.5
mV max
22
35
50
nA max
29
40
55
nA max
= 5V)
− VR(V +
= 3V)
VANODE ≤ VFB ≤ 5.06V
Current
en
Voltage Noise
BW = 10 Hz to 10 kHz,
VRO = VR
30
mV max
µVRMS
Note 1: Absolute maximum ratings indicate limits beyond which damage to the component may occur. Electrical specifications do not apply when operating the device beyond its rated operating conditions.
Note 2: Input voltage above V+ is allowed.
Note 3: More accurately, it is excessive current flow, with resulting excess heating, that limits the voltages on all pins. When any pin is pulled a diode drop below
V−, a parasitic NPN transistor turns ON. No latch-up will occur as long as the current through that pin remains below the Maximum Rating. Operation is undefined
and unpredictable when any parasitic diode or transistor is conducting.
Note 4: Junction temperature may be calculated using TJ = TA + PDθjA. The given thermal resistance is worst-case for packages in sockets in still air. For packages
soldered to copper-clad board with dissipation from one comparator or reference output transistor, nominal θjA are 90˚C/W for the N package, WM package.
Note 5: Human body model, 100 pF discharged through a 1.5 kΩ resistor.
Note 6: Typical values in standard typeface are for TJ = 25˚C; values in boldface type apply for the full operating temperature range. These values represent the
most likely parametric norm.
Note 7: All limits are guaranteed at room temperature (standard type face) or at operating temperature extremes (bold type face).
Note 8: Slew rate is measured with op amp in a voltage follower configuration. For rising slew rate, the input voltage is driven from 5V to 25V, and the output voltage
transition is sampled at 10V and @20V. For falling slew rate, the input voltage is driven from 25V to 5V, and the output voltage transition is sampled at 20V and 10V.
Note 9: VR is the Cathode-feedback voltage, nominally 1.244V.
Note 10: Average reference drift is calculated from the measurement of the reference voltage at 25˚C and at the temperature extremes. The drift, in ppm/˚C, is
106 • ∆VR/(VR[25˚C] • ∆TJ), where ∆VR is the lowest value subtracted from the highest, VR[25˚C] is the value at 25˚C, and ∆TJ is the temperature range. This parameter
is guaranteed by design and sample testing.
Note 11: Hysteresis is the change in VR caused by a change in TJ, after the reference has been “dehysterized”. To dehysterize the reference; that is minimize the
hysteresis to the typical value, cycle its junction temperature in the following pattern, spiraling in toward 25˚C: 25˚C, 85˚C, −40˚C, 70˚C, 0˚C, 25˚C.
Note 12: Low contact resistance is required for accurate measurement.
Note 13: A military RETSLM614AMX electrical test specification is available on request. The LM614AMJ/883 can also be procured as a Standard Military Drawing.
Simplified Schematic Diagrams
Op Amp
DS009326-2
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4
Simplified Schematic Diagrams
(Continued)
Reference / Bias
DS009326-3
Typical Performance Characteristics (Reference)
TJ = 25˚C, FEEDBACK pin shorted to V− =
0V, unless otherwise noted
Reference Voltage
vs Temperature
on 5 Representative Units
Accelerated Reference
Voltage Drift vs Time
Reference Voltage Drift
DS009326-48
DS009326-49
DS009326-47
Reference Voltage vs
Current and Temperature
Reference Voltage vs
Current and Temperature
DS009326-50
Reference Voltage vs
Reference Current
DS009326-51
5
DS009326-52
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Typical Performance Characteristics (Reference)
TJ = 25˚C, FEEDBACK pin shorted to V−
= 0V, unless otherwise noted (Continued)
Reference Voltage vs
Reference Current
Reference AC
Stability Range
FEEDBACK Current vs
FEEDBACK-to-Anode
Voltage
DS009326-53
DS009326-54
DS009326-55
FEEDBACK Current vs
FEEDBACK-to-Anode
Voltage
Reference Noise Voltage
vs Frequency
Reference Small-Signal
Resistance vs Frequency
DS009326-57
DS009326-58
DS009326-56
Reference Power-Up Time
Reference Voltage with
FEEDBACK Voltage Step
Reference Voltage with
100z12 µA Current Step
DS009326-59
DS009326-60
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DS009326-61
Typical Performance Characteristics (Reference)
TJ = 25˚C, FEEDBACK pin shorted to V−
= 0V, unless otherwise noted (Continued)
Reference Step Response
for 100 µA z 10 mA
Current Step
Reference Voltage Change
with Supply Voltage Step
DS009326-63
DS009326-62
Typical Performance Characteristics (Op Amps)
V+ = 5V, V− = GND = 0V, VCM = V+/2, VOUT
= V+/2, TJ = 25˚C, unless otherwise noted
Input Common-Mode
Voltage Range vs
Temperature
VOS vs Junction
Temperature on 9
Representative Units
Input Bias Current vs
Common-Mode Voltage
DS009326-66
DS009326-64
Slew Rate vs Temperature
and Output Sink Current
DS009326-65
Large-Signal
Step Response
Output Voltage Swing
vs Temp. and Current
DS009326-67
DS009326-68
7
DS009326-69
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Typical Performance Characteristics (Op Amps)
V+ = 5V, V− = GND = 0V, VCM = V+/2,
VOUT = V+/2, TJ = 25˚C, unless otherwise noted (Continued)
Output Source Current vs
Output Voltage and Temp.
Output Sink Current vs
Output Voltage and Temp.
DS009326-71
DS009326-70
Output Impedance vs
Frequency and Gain
Output Swing,
Large Signal
Small-Signal Pulse
Response vs Temp.
Small-Signal Pulse
Response vs Load
DS009326-74
DS009326-73
Op Amp Voltage Noise
vs Frequency
DS009326-72
Op Amp Current Noise
vs Frequency
DS009326-76
DS009326-75
Small-Signal Voltage
Gain vs Frequency
and Temperature
DS009326-77
DS009326-78
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8
Typical Performance Characteristics (Op Amps)
V+ = 5V, V− = GND = 0V, VCM = V+/2,
VOUT = V+/2, TJ = 25˚C, unless otherwise noted (Continued)
Small-Signal Voltage Gain
vs Frequency and Load
Follower Small-Signal
Frequency Response
DS009326-79
Common-Mode Input
Voltage Rejection Ratio
DS009326-81
DS009326-80
Power Supply Current vs
Power Supply Voltage
DS009326-7
Positive Power Supply
Voltage Rejection Ratio
Negative Power Supply
Voltage Rejection Ratio
DS009326-21
DS009326-22
9
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Typical Performance Characteristics (Op Amps)
V+ = 5V, V− = GND = 0V, VCM = V+/2,
VOUT = V+/2, TJ = 25˚C, unless otherwise noted (Continued)
Input Offset Current vs
Junction Temperature
Input Bias Current vs
Junction Temperature
DS009326-24
DS009326-38
Typical Performance Distributions
Average VOS Drift
Military Temperature Range
Average VOS Drift
Industrial Temperature Range
DS009326-29
Average VOS Drift
Commercial Temperature Range
DS009326-30
Average IOS Drift
Military Temperature Range
DS009326-31
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DS009326-32
10
Typical Performance Distributions
Average IOS Drift
Industrial Temperature Range
(Continued)
Average IOS Drift
Commercial Temperature Range
DS009326-34
DS009326-33
Voltage Reference Broad-Band
Noise Distribution
Op Amp Voltage
Noise Distribution
DS009326-35
Op Amp Current
Noise Distribution
DS009326-36
11
DS009326-37
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Application Information
VOLTAGE REFERENCE
Reference Biasing
The voltage reference is of a shunt regulator topology that
models as a simple zener diode. With current Ir flowing in the
“forward” direction there is the familiar diode transfer function. Ir flowing in the reverse direction forces the reference
voltage to be developed from cathode to anode. The cathode may swing from a diode drop below V− to the reference
voltage or to the avalanche voltage of the parallel protection
diode, nominally 7V. A 6.3V reference with V+ = 3V is
allowed.
DS009326-11
FIGURE 3. 1.2V Reference
Adjustable Reference
The FEEDBACK pin allows the reference output voltage,
Vro, to vary from 1.24V to 6.3V. The reference attempts to
hold Vr at 1.24V. If Vr is above 1.24V, the reference will conduct current from Cathode to Anode; FEEDBACK current always remains low. If FEEDBACK is connected to Anode,
then Vro = Vr = 1.24V. For higher voltages FEEDBACK is
held at a constant voltage above Anode — say 3.76V for Vro
= 5V. Connecting a resistor across the constant Vr generates
a current I = Vr/R1 flowing from Cathode into FEEDBACK
node. A Thevenin equivalent 3.76V is generated from FEEDBACK to Anode with R2 = 3.76/I. Keep I greater than one
thousand times larger than FEEDBACK bias current for
< 0.1% error — I≥32 µA for the military grade over the military
temperature range (I≥5.5 µA for a 1% untrimmed error for a
commercial part.)
DS009326-9
FIGURE 1. Voltages Associated with Reference
(Current Source Ir is External)
The reference equivalent circuit reveals how Vris held at the
constant 1.2V by feedback, and how the FEEDBACK pin
passes little current.
To generate the required reverse current, typically a resistor
is connected from a supply voltage higher than the reference
voltage. Varying that voltage, and so varying Ir, has small effect with the equivalent series resistance of less than an ohm
at the higher currents. Alternatively, an active current source,
such as the LM134 series, may generate Ir.
Capacitors in parallel with the reference are allowed. See the
Reference AC Stability Range typical curve for capacitance
values — from 20 µA to 3 mA any capacitor value is stable.
With the reference’s wide stability range with resistive and
capacitive loads, a wide range of RC filter values will perform
noise filtering.
DS009326-12
FIGURE 4. Thevenin Equivalent
of Reference with 5V Output
DS009326-10
DS009326-13
FIGURE 2. Reference Equivalent Circuit
R1 = Vr/I = 1.24/32µ = 39k
R2 = R1 {(Vro/Vr) − 1} = 39k {(5/1.24) − 1)} = 118k
FIGURE 5. Resistors R1 and R2 Program
Reference Output Voltage to be 5V
Understanding that Vr is fixed and that voltage sources, resistors, and capacitors may be tied to the FEEDBACK pin, a
range of Vr temperature coefficients may be synthesized.
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12
Application Information
(Continued)
DS009326-18
DS009326-14
FIGURE 10. Proportional-to-Absolute-Temperature
Current Source
FIGURE 6. Output Voltage has Negative Temperature
Coefficient (TC) if R2 has Negative TC
DS009326-15
DS009326-19
FIGURE 7. Output Voltage has Positive TC
if R1 has Negative TC
FIGURE 11. Negative-TC Current Source
Hysteresis
The reference voltage depends, slightly, on the thermal history of the die. Competitive micro-power products
vary — always check the data sheet for any given device. Do
not assume that no specification means no hysteresis.
OPERATIONAL AMPLIFIERS
Any amp or the reference may be biased in any way with no
effect on the other amps or reference, except when a substrate diode conducts (see Guaranteed Electrical Characteristics (Note 1)). One amp input may be outside the
common-mode range, another amp may be operated as a
comparator, another with all terminals floating with no effect
on the others (tying inverting input to output and
non-inverting input to V− on unused amps is preferred).
Choosing operating points that cause oscillation, such as
driving too large a capacitive load, is best avoided.
DS009326-16
FIGURE 8. Diode in Series with R1 Causes Voltage
across R1 and R2 to be Proportional to Absolute
Temperature (PTAT)
Connecting a resistor across Cathode-to-FEEDBACK creates a 0 TC current source, but a range of TCs may be
synthesized.
Op Amp Output Stage
These op amps, like their LM124 series, have flexible and
relatively wide-swing output stages. There are simple rules
to optimize output swing, reduce cross-over distortion, and
optimize capacitive drive capability:
1. Output Swing: Unloaded, the 42 µA pull-down will bring
the output within 300 mV of V− over the military temperature range. If more than 42 µA is required, a resistor from
output to V− will help. Swing across any load may be improved slightly if the load can be tied to V+, at the cost of
poorer sinking open-loop voltage gain
DS009326-17
I = Vr/R1 = 1.24/R1
FIGURE 9. Current Source is Programmed by R1
13
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Application Information
2.
3.
output stage NPN re until the output resistance is that of
the current limit 25Ω. 200 pF may then be driven without
oscillation.
(Continued)
Cross-over Distortion: The LM614 has lower cross-over
distortion (a 1 VBE deadband versus 3 VBE for the
LM124), and increased slew rate as shown in the characteristic curves. A resistor pull-up or pull-down will force
class-A operation with only the PNP or NPN output transistor conducting, eliminating cross-over distortion
Capacitive Drive: Limited by the output pole caused by
the output resistance driving capacitive loads, a
pull-down resistor conducting 1 mA or more reduces the
Op Amp Input Stage
The lateral PNP input transistors, unlike most op amps, have
BVEBO equal to the absolute maximum supply voltage. Also,
they have no diode clamps to the positive supply nor across
the inputs. These features make the inputs look like high impedances to input sources producing large differential and
common-mode voltages.
Typical Applications
DS009326-44
DS009326-42
VOUT = (R1 /Pe + 1) VREF
R1, R2 should be 1% metal film
Pβ should be low T.C. trim pot
FIGURE 12. Simple Low Quiescent Drain Voltage
Regulator. Total supply current approximately 320 µA,
when VIN = +5V.
FIGURE 14. Slow Rise Time Upon Power-Up,
Adjustable Transducer Bridge Driver.
Rise time is approximately 1 ms.
DS009326-43
*10k must be low
t.c. trimpot.
FIGURE 13. Ultra Low Noise 10.00V Reference. Total
output noise is typically 14 µVRMS.
DS009326-46
FIGURE 15. Low Drop-Out Voltage Regulator Circuit,
drop-out voltage is typically 0.2V.
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14
Typical Applications
(Continued)
DS009326-45
FIGURE 16. Transducer Data Acquisition System. Set zero code voltage, then adjust 10Ω gain adjust pot for full
scale.
15
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Physical Dimensions
inches (millimeters) unless otherwise noted
Ceramic Dual-In-Line Package (J)
Order Number LM614AMJ/883
NS Package Number J16A
16-Lead Molded Small Outline Package (WM)
Order Number LM614CWM or LM614IWM
NS Package Number M16B
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16
LM614 Quad Operational Amplifier and Adjustable Reference
Physical Dimensions
inches (millimeters) unless otherwise noted (Continued)
16-Lead Molded Dual-In-Line Package (N)
Order Number LM614CN, LM614AIN, LM614BIN, LM614AMN or LM614MN
NS Package Number N16A
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Tel: 1-800-272-9959
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2. A critical component is any component of a life
support device or system whose failure to perform
can be reasonably expected to cause the failure of
the life support device or system, or to affect its
safety or effectiveness.
National Semiconductor
Asia Pacific Customer
Response Group
Tel: 65-2544466
Fax: 65-2504466
Email: [email protected]
National Semiconductor
Japan Ltd.
Tel: 81-3-5639-7560
Fax: 81-3-5639-7507
National does not assume any responsibility for use of any circuitry described, no circuit patent licenses are implied and National reserves the right at any time without notice to change said circuitry and specifications.