Freescale MRF7S21170HR3 Rf power field effect transistors (n-channel enhancement-mode lateral mosfets) Datasheet

Freescale Semiconductor
Technical Data
Document Number: MRF7S21170H
Rev. 3, 9/2006
RF Power Field Effect Transistors
MRF7S21170HR3
MRF7S21170HSR3
N - Channel Enhancement - Mode Lateral MOSFETs
Designed for CDMA base station applications with frequencies from 2110 to
2170 MHz. Suitable for CDMA and multicarrier amplifier applications. To be
used in Class AB and Class C for PCN - PCS/cellular radio and WLL
applications.
• Typical Single- Carrier W - CDMA Performance: VDD = 28 Volts, IDQ =
1400 mA, Pout = 50 Watts Avg., Full Frequency Band, 3GPP Test Model 1,
64 DPCH with 50% Clipping, Channel Bandwidth = 3.84 MHz, Input Signal
PAR = 7.5 dB @ 0.01% Probability on CCDF.
Power Gain — 16 dB
Drain Efficiency — 31%
Device Output Signal PAR — 6.1 dB @ 0.01% Probability on CCDF
ACPR @ 5 MHz Offset — - 37 dBc in 3.84 MHz Channel Bandwidth
• Capable of Handling 5:1 VSWR, @ 32 Vdc, 2140 MHz, 170 Watts CW
Peak Tuned Output Power
• Pout @ 1 dB Compression Point w 170 Watts CW
Features
• 100% PAR Tested for Guaranteed Output Power Capability
• Characterized with Series Equivalent Large - Signal Impedance Parameters
• Internally Matched for Ease of Use
• Integrated ESD Protection
• Greater Negative Gate - Source Voltage Range for Improved Class C
Operation
• Designed for Digital Predistortion Error Correction Systems
• RoHS Compliant
• In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
2110 - 2170 MHz, 50 W AVG., 28 V
SINGLE W - CDMA
LATERAL N - CHANNEL
RF POWER MOSFETs
CASE 465B - 03, STYLE 1
NI - 880
MRF7S21170HR3
CASE 465C - 02, STYLE 1
NI - 880S
MRF7S21170HSR3
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain- Source Voltage
VDSS
- 0.5, +65
Vdc
Gate- Source Voltage
VGS
- 6.0, +10
Vdc
Operating Voltage
VDD
32, +0
Vdc
Storage Temperature Range
Tstg
- 65 to +150
°C
Case Operating Temperature
TC
150
°C
Operating Junction Temperature
TJ
200
°C
Symbol
Value (1,2)
Unit
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Case Temperature 80°C, 170 W CW
Case Temperature 73°C, 25 W CW
RθJC
0.31
0.36
°C/W
1. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access
the MTTF calculators by product.
2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
© Freescale Semiconductor, Inc., 2006. All rights reserved.
RF Device Data
Freescale Semiconductor
MRF7S21170HR3 MRF7S21170HSR3
1
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22 - A114)
1A (Minimum)
Machine Model (per EIA/JESD22 - A115)
B (Minimum)
Charge Device Model (per JESD22 - C101)
IV (Minimum)
Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted)
Symbol
Min
Typ
Max
Unit
Zero Gate Voltage Drain Leakage Current
(VDS = 65 Vdc, VGS = 0 Vdc)
IDSS
—
—
10
μAdc
Zero Gate Voltage Drain Leakage Current
(VDS = 28 Vdc, VGS = 0 Vdc)
IDSS
—
—
1
μAdc
Gate- Source Leakage Current
(VGS = 5 Vdc, VDS = 0 Vdc)
IGSS
—
—
500
nAdc
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 270 μAdc)
VGS(th)
1
2
3
Vdc
Gate Quiescent Voltage (1)
(VDS = 28 Vdc, ID = 1400 mAdc, Measured in Functional Test)
VGS(Q)
2
2.8
4
Vdc
Drain- Source On - Voltage
(VGS = 10 Vdc, ID = 2.7 Adc)
VDS(on)
0.1
0.15
0.3
Vdc
Reverse Transfer Capacitance
(VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Crss
—
0.9
—
pF
Output Capacitance
(VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Coss
—
703
—
pF
Characteristic
Off Characteristics
On Characteristics
Dynamic Characteristics (2)
Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 1400 mA, Pout = 50 W Avg., f = 2112.5 MHz and
f = 2167.5 MHz, Single - Carrier W - CDMA, 3GPP Test Model 1, 64 DPCH, 50% Clipping, PAR = 7.5 dB @ 0.01% Probability on CCDF.
ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset.
Power Gain
Gps
15
16
18
dB
Drain Efficiency
ηD
29
31
—
%
PAR
5.7
6.1
—
dB
ACPR
—
- 37
- 35
dBc
IRL
—
- 15
-9
dB
Output Peak - to - Average Ratio @ 0.01% Probability on CCDF
Adjacent Channel Power Ratio
Input Return Loss
Typical Performances (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 1400 mA, 2110- 2170 MHz Bandwidth
Video Bandwidth
(Tone Spacing from 100 kHz to VBW)
ΔIMD3 = IMD3 @ VBW frequency - IMD3 @ 100 kHz <1 dBc (both
sidebands)
VBW
MHz
—
25
—
Gain Flatness in 60 MHz Bandwidth @ Pout = 170 W CW
GF
—
0.4
—
dB
Deviation from Linear Phase in 60 MHz Bandwidth
@ Pout = 170 W CW
Φ
—
1.95
—
°
Delay
—
1.7
—
ns
ΔΦ
—
18
—
°
ΔG
—
0.015
—
dB/°C
ΔP1dB
—
0.01
—
dBm/°C
Group Delay @ Pout = 170 W CW, f = 2140 MHz
Part - to - Part Insertion Phase Variation @ Pout = 170 W CW
Gain Variation over Temperature
Output Power Variation over Temperature
1. VGG = 2 x VGS(Q). Parameter measured on Freescale Test Fixture, due to resistive divider network on the board. Refer to Test Circuit
schematic.
2. Part internally matched both on input and output.
MRF7S21170HR3 MRF7S21170HSR3
2
RF Device Data
Freescale Semiconductor
Z17
R1
VBIAS
VSUPPLY
+
R2
C1
C2
Z7
C8
R3
RF
INPUT Z1
C10
C12
C13
Z9
C4
Z2
Z3
Z4
Z5
Z6
Z10
Z8
C3
Z11
Z12
Z13
Z14
Z15
C17
DUT
C5
C14
C6
C15
RF
Z16 OUTPUT
C18
C16
Z18
C7
Z1
Z2*
Z3*
Z4*
Z5*
Z6
Z7
Z8
Z9
Z10
0.250″ x 0.083″ Microstrip
0.090″ x 0.083″ Microstrip
0.842″ x 0.083″ Microstrip
0.379″ x 0.083″ Microstrip
0.307″ x 0.083″ Microstrip
0.156″ x 0.787″ Microstrip
1.160″ x 0.080″ Microstrip
0.119″ x 0.787″ Microstrip
0.077″ x 0.880″ Microstrip
0.459″ x 1.000″ Microstrip
Z11
Z12*
Z13*
Z14*
Z15*
Z16
Z17, Z18
PCB
C9
C11
0.060″ x 0.760″ Microstrip
0.129″ x 0.083″ Microstrip
0.436″ x 0.083″ Microstrip
0.490″ x 0.083″ Microstrip
0.275″ x 0.083″ Microstrip
0.230″ x 0.083″ Microstrip
0.900″ x 0.080″ Microstrip
Taconix TLX8 - 0300, 0.030″, εr =2.55
* Variable for tuning
Figure 1. MRF7S21170HR3(HSR3) Test Circuit Schematic
Table 5. MRF7S21170HR3(HSR3) Test Circuit Component Designations and Values
Part
Description
Part Number
Manufacturer
C1
100 pF 100B Chip Capacitor
100B101JW500XT
ATC
C2, C3, C7, C8, C17, C18
6.8 pF 600B Chip Capacitors
600B6R8BT500XT
ATC
C4, C15
0.3 pF 700B Chip Capacitors
700B0R3BW500XT
ATC
C5
0.8 pF 600B Chip Capacitor
600B0R8BT500XT
ATC
C6
0.2 pF 700B Chip Capacitor
700B0R2BW500XT
ATC
C9, C10, C11, C12
10 μF Chip Capacitors
C5750X5R1H106MT
TDK
C13
470 μF, 63 V Electrolytic Capacitor, Radial
13661471
Philips
C14
0.4 pF 700B Chip Capacitor
700B0R4BW500XT
ATC
C16
0.1 pF 700B Chip Capacitor
700B0R1BW500XT
ATC
R1, R2
10 kΩ, 1/4 W Chip Resistors
CRCW12061001FKTA
Vishay
R3
10 Ω, 1/4 W Chip Resistor
CRCW120610R0FKTA
Vishay
MRF7S21170HR3 MRF7S21170HSR3
RF Device Data
Freescale Semiconductor
3
C13
R2
R1
C1
C8
C2
C10 C12
R3
C17
C3
C5
C6
CUT OUT AREA
C4
C14
C15
C9
C16
C18
C11
C7
MRF7S21170H
Rev 0
Figure 2. MRF7S21170HR3(HSR3) Test Circuit Component Layout
MRF7S21170HR3 MRF7S21170HSR3
4
RF Device Data
Freescale Semiconductor
Gps
34
15
14
32
ηD
30
VDD = 28 Vdc, Pout = 50 W (Avg.), IDQ = 1400 mA
Single−Carrier W−CDMA, 3.84 MHz Channel
Bandwidth, PAR = 7.5 dB @ 0.01% Probability (CCDF)
13
IRL
12
11
10
28
−5
0
−10
−1
PARC
9
2060
−2
2100
2080
2120
2140
2160
2180
−20
−3
2220
2200
−15
−25
IRL, INPUT RETURN LOSS (dB)
Gps, POWER GAIN (dB)
16
36
PARC (dB)
17
ηD, DRAIN
EFFICIENCY (%)
TYPICAL CHARACTERISTICS
f, FREQUENCY (MHz)
16
42
Gps, POWER GAIN (dB)
Gps
15
14
40
ηD
38
VDD = 28 Vdc, Pout = 84 W (Avg.), IDQ = 1400 mA
Single−Carrier W−CDMA, 3.84 MHz Channel
Bandwidth, PAR = 7.5 dB @ 0.01% Probability (CCDF)
13
12
IRL
11
36
−5
−2
−10
−3
10
−4
−20
PARC
9
2060
2080
2100
2120
2140
2160
2180
2200
−15
−5
2220
−25
IRL, INPUT RETURN LOSS (dB)
44
PARC (dB)
17
ηD, DRAIN
EFFICIENCY (%)
Figure 3. Output Peak - to - Average Ratio Compression (PARC)
Broadband Performance @ Pout = 50 Watts Avg.
f, FREQUENCY (MHz)
Figure 4. Output Peak - to - Average Ratio Compression (PARC)
Broadband Performance @ Pout = 84 Watts Avg.
18
−10
IMD, THIRD ORDER
INTERMODULATION DISTORTION (dBc)
IDQ = 2100 mA
Gps, POWER GAIN (dB)
17
1750 mA
16
1400 mA
15
1050 mA
700 mA
14
VDD = 28 Vdc, f1 = 2135 MHz, f2 = 2145 MHz
Two−Tone Measurements, 10 MHz Tone Spacing
VDD = 28 Vdc, f1 = 2135 MHz, f2 = 2145 MHz
Two−Tone Measurements, 10 MHz Tone Spacing
−20
2100 mA
−30
IDQ = 700 mA
−40
1400 mA
−50
1750 mA
1050 mA
13
−60
1
10
100
Pout, OUTPUT POWER (WATTS) PEP
Figure 5. Two - Tone Power Gain versus
Output Power
400
1
10
100
400
Pout, OUTPUT POWER (WATTS) PEP
Figure 6. Third Order Intermodulation Distortion
versus Output Power
MRF7S21170HR3 MRF7S21170HSR3
RF Device Data
Freescale Semiconductor
5
TYPICAL CHARACTERISTICS
IMD, INTERMODULATION DISTORTION (dBc)
VDD = 28 Vdc, IDQ = 1400 mA
f1 = 2135 MHz, f2 = 2145 MHz
Two−Tone Measurements, 10 MHz Tone Spacing
−20
−30
−40
3rd Order
−50
5th Order
7th Order
−60
1
VDD = 28 Vdc, Pout = 170 W (PEP), IDQ = 1400 mA
Two−Tone Measurements
(f1 + f2)/2 = Center Frequency of 2140 MHz
−10
−15
−20
−25
IM3−L
−30
IM3−U
−35
−40
IM5−U
−45
IM5−L
−50
−55
IM7−U
IM7−L
10
1
400
100
10
0
−5
100
Pout, OUTPUT POWER (WATTS) PEP
TWO−TONE SPACING (MHz)
Figure 7. Intermodulation Distortion Products
versus Output Power
Figure 8. Intermodulation Distortion Products
versus Tone Spacing
OUTPUT COMPRESSION AT THE 0.01%
PROBABILITY ON THE CCDF (dB)
1
54
Ideal
0
48
−1
−2
42
−1 dB = 43.335 W
36
−2 dB = 61.884 W
−3
30
−3 dB = 83.111 W
−4
Actual
VDD = 28 Vdc, IDQ = 1400 mA
f = 2140 MHz, Input PAR = 7.5 dB
−5
20
40
60
100
80
ηD, DRAIN EFFICIENCY (%)
IMD, INTERMODULATION DISTORTION (dBc)
−10
24
18
120
Pout, OUTPUT POWER (WATTS)
19
−30
Uncorrected, Upper and Lower
−40
60
−30_C
VDD = 28 Vdc, IDQ = 1400 mA, f = 2140 MHz
Single−Carrier W−CDMA, PAR = 7.5 dB, ACPR @
5 MHz Offset in 3.84 MHz Integrated Bandwidth
DPD Corrected
No Memory Correction
−50
−60
Gps
18
40
85_C
16
30
20
15
VDD = 28 Vdc
IDQ = 1400 mA
f = 2140 MHz
ηD
DPD Corrected, with Memory Correction
13
41
42
43
44
45
46
47
48
49
50
Pout, OUTPUT POWER (dBm)
Figure 10. Digital Predistortion Correction versus
ACPR and Output Power
50
85_C
25_C
17
14
−70
40
25_C
TC = −30_C
1
10
100
10
ηD, DRAIN EFFICIENCY (%)
−20
Gps, POWER GAIN (dB)
ACPR, UPPER AND LOWER RESULTS (dBc)
Figure 9. Output Peak - to - Average Ratio
Compression (PARC) versus Output Power
0
400
Pout, OUTPUT POWER (WATTS) CW
Figure 11. Power Gain and Drain Efficiency
versus CW Output Power
MRF7S21170HR3 MRF7S21170HSR3
6
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
109
17
MTTF FACTOR (HOURS x AMPS2)
Gps, POWER GAIN (dB)
IDQ = 1400 mA
f = 2140 MHz
16
15
14
VDD = 24 V
28 V
108
107
32 V
106
13
0
100
200
280
90
110
Pout, OUTPUT POWER (WATTS) CW
130
150
170
190
210
230
250
TJ, JUNCTION TEMPERATURE (°C)
Figure 12. Power Gain versus Output Power
This above graph displays calculated MTTF in hours x ampere2
drain current. Life tests at elevated temperatures have correlated to
better than ±10% of the theoretical prediction for metal failure. Divide
MTTF factor by ID2 for MTTF in a particular application.
Figure 13. MTTF Factor versus Junction Temperature
W - CDMA TEST SIGNAL
100
−10
3.84 MHz
Channel BW
−20
10
1
−40
Output Signal
Input Signal
−50
0.1
(dB)
PROBABILITY (%)
−30
0.01
−70
W−CDMA. ACPR Measured in 3.84 MHz
Channel Bandwidth @ "5 MHz Offset.
PAR = 7.5 dB @ 0.01% Probability on
CCDF
0.001
0.0001
0
2
4
6
−60
−80
−ACPR in 3.84 MHz
Integrated BW
−90
8
10
PEAK−TO−AVERAGE (dB)
Figure 14. CCDF W - CDMA 3GPP, Test Model 1,
64 DPCH, 50% Clipping, Single - Carrier Test Signal
−ACPR in 3.84 MHz
Integrated BW
−100
−110
−9
−7.2 −5.4 −3.6 −1.8
0
1.8
3.6
5.4
7.2
9
f, FREQUENCY (MHz)
Figure 15. Single - Carrier W - CDMA Spectrum
MRF7S21170HR3 MRF7S21170HSR3
RF Device Data
Freescale Semiconductor
7
Zo = 10 Ω
f = 2220 MHz
Zload
Zsource
f = 2060 MHz
f = 2220 MHz
f = 2060 MHz
VDD = 28 Vdc, IDQ = 1400 mA, Pout = 50 W Avg.
f
MHz
Zsource
W
Zload
W
2060
4.57 - j10.70
1.02 - j3.54
2080
4.57 - j10.38
0.99 - j3.34
2100
4.57 - j10.06
0.96 - j3.14
2120
4.52 - j9.72
0.93 - j2.94
2140
4.40 - j9.42
0.92 - j2.76
2160
4.15 - j9.12
0.91 - j2.59
2180
4.44 - j8.82
0.89 - j2.42
2200
4.19 - j8.53
0.88 - j2.25
2220
4.12 - j8.23
0.88 - j2.09
Zsource = Test circuit impedance as measured from
gate to ground.
Zload
= Test circuit impedance as measured
from drain to ground.
Output
Matching
Network
Device
Under
Test
Input
Matching
Network
Z
source
Z
load
Figure 16. Series Equivalent Source and Load Impedance
MRF7S21170HR3 MRF7S21170HSR3
8
RF Device Data
Freescale Semiconductor
ALTERNATIVE PEAK TUNE LOAD PULL CHARACTERISTICS
62
61
P6dB = 53.89 dBm (244 W)
61
59
58
Pout, OUTPUT POWER (dBm)
Pout, OUTPUT POWER (dBm)
60
Ideal
P3dB = 53.56 dBm (226 W)
57
56
P1dB = 52.75 dBm
(188 W)
55
54
Actual
53
VDD = 28 Vdc, IDQ = 1400 m, Pulsed CW
12 μsec(on), 10% Duty Cycle, f = 2140 MHz
52
51
32
33
34
35
36
37
38
39
40
41
42
43
60
59
58
P3dB = 54.65 dBm (290 W)
57
56
P1dB = 53.54 dBm
(226 W)
55
Actual
54
VDD = 32 Vdc, IDQ = 1400 mA, Pulsed CW
12 μsec(on), 10% Duty Cycle, f = 2140 MHz
53
52
44
33
34
35
Pin, INPUT POWER (dBm)
36
37
38
39
40
41
42
43
44
45
Pin, INPUT POWER (dBm)
NOTE: Measured in a Peak Tuned Load Pull Fixture
NOTE: Measured in a Peak Tuned Load Pull Fixture
Test Impedances per Compression Level
P3dB
Ideal
P6dB = 54.88 dBm (307 W)
Zsource
Ω
Zload
Ω
4.43 - j11.85
0.81 - j2.87
Figure 17. Pulsed CW Output Power
versus Input Power
Test Impedances per Compression Level
P3dB
Zsource
Ω
Zload
Ω
4.43 - j11.85
0.72 - j2.87
Figure 18. Pulsed CW Output Power
versus Input Power
MRF7S21170HR3 MRF7S21170HSR3
RF Device Data
Freescale Semiconductor
9
PACKAGE DIMENSIONS
B
G
2X
1
Q
bbb
M
T A
B
M
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M−1994.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION H IS MEASURED 0.030 (0.762) AWAY
FROM PACKAGE BODY.
4. DELETED
M
B
(FLANGE)
3
K
2
bbb
bbb
M
ccc
M
M
D
T A
B
M
M
(INSULATOR)
M
T A
M
B
M
T A
M
B
M
N
R
ccc
M
T A
M
B
S
(LID)
aaa
M
T A
M
(LID)
M
(INSULATOR)
B
M
H
C
E
T
A
(FLANGE)
SEATING
PLANE
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M−1994.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION H IS MEASURED 0.030 (0.762) AWAY
FROM PACKAGE BODY.
1
B
(FLANGE)
2
bbb
M
D
T A
MILLIMETERS
MIN
MAX
33.91
34.16
13.6
13.8
3.73
5.08
12.57
12.83
0.89
1.14
0.08
0.15
27.94 BSC
1.45
1.70
4.32
5.33
22.15
22.55
19.30
22.60
3.00
3.51
13.10
13.30
13.10
13.30
0.178 REF
0.254 REF
0.381 REF
CASE 465B - 03
ISSUE D
NI - 880
MRF7S21170HR3
B
K
INCHES
MIN
MAX
1.335
1.345
0.535
0.545
0.147
0.200
0.495
0.505
0.035
0.045
0.003
0.006
1.100 BSC
0.057
0.067
0.170
0.210
0.872
0.888
0.871
0.889
.118
.138
0.515
0.525
0.515
0.525
0.007 REF
0.010 REF
0.015 REF
STYLE 1:
PIN 1. DRAIN
2. GATE
3. SOURCE
F
A
DIM
A
B
C
D
E
F
G
H
K
M
N
Q
R
S
aaa
bbb
ccc
M
bbb
M
T A
M
B
ccc
M
T A
M
B
B
M
M
(INSULATOR)
M
N
R
ccc
M
T A
M
aaa
M
T A
M
B
S
(LID)
M
(LID)
M
(INSULATOR)
B
M
H
DIM
A
B
C
D
E
F
H
K
M
N
R
S
aaa
bbb
ccc
INCHES
MIN
MAX
0.905
0.915
0.535
0.545
0.147
0.200
0.495
0.505
0.035
0.045
0.003
0.006
0.057
0.067
0.170
0.210
0.872
0.888
0.871
0.889
0.515
0.525
0.515
0.525
0.007 REF
0.010 REF
0.015 REF
MILLIMETERS
MIN
MAX
22.99
23.24
13.60
13.80
3.73
5.08
12.57
12.83
0.89
1.14
0.08
0.15
1.45
1.70
4.32
5.33
22.15
22.55
19.30
22.60
13.10
13.30
13.10
13.30
0.178 REF
0.254 REF
0.381 REF
STYLE 1:
PIN 1. DRAIN
2. GATE
3. SOURCE
C
F
E
T
A
A
(FLANGE)
SEATING
PLANE
CASE 465C - 02
ISSUE D
NI - 880S
MRF7S21170HSR3R3
MRF7S21170HR3 MRF7S21170HSR3
10
RF Device Data
Freescale Semiconductor
PRODUCT DOCUMENTATION
Refer to the following documents to aid your design process.
Application Notes
• AN1955: Thermal Measurement Methodology of RF Power Amplifiers
Engineering Bulletins
• EB212: Using Data Sheet Impedances for RF LDMOS Devices
REVISION HISTORY
The following table summarizes revisions to this document.
Date
Revision
Number
May 2006
0
• Initial Release of Data Sheet
June 2006
1
• Added Class C to description of parts, pg. 1
• Changeded “≥” to “ - ” in the Device Output Signal Par bullet, pg. 1
• Changed typ value from ±9 to 18 in Part - to - Part Phase Variation characteristic description in
Table 4, Typical Performances
• Expanded the characterization range in the MTTF Factor graph from 200_C to 230_C, Fig. 12
Aug. 2006
2
• Added Greater Negative Source bullet to Features section
• Corrected Fig. 14, Single - Carrier W - CDMA Spectrum, to 3.84 MHz
Sept. 2006
3
• Changed “Capable of Handling” bullet from 10:1 VSWR @ 28 Vdc to 5:1 VSWR @ 32 Vdc,
pg. 1
• Added “Insertion” to Part - to - Part Phase Variation characteristic description in Table 4, Typical
Performances
• Added Gain Flatness, Group Delay and Deviation from Linear Phase characteristics to Table 4,
Typical Performances
• Corrected Z6 value from “0.119” to “0.156”, corrected Z8 value from “0.156” to “0.119”,
corrected Z9 value from “0.770” to “0.077”, corrected Z11 value from “0.076” to “0.760”, Fig. 1,
Test Circuit Schematic
• Added Part Number and Manufacturer for R1, R2 and R3 in Table 5, Test Circuit Component
Designations and Values
• Added Figure 10, Digital Predistortion Correction
• Corrected Fig. 15, Single - Carrier W - CDMA Spectrum, to correctly reflect integrated
bandwidth offsets
• Added Figure 17, Pulsed CW Output Power versus Input Power @ 28 Vdc
• Added Figure 18, Pulsed CW Output Power versus Input Power @ 32 Vdc
Description
MRF7S21170HR3 MRF7S21170HSR3
RF Device Data
Freescale Semiconductor
11
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© Freescale Semiconductor, Inc. 2006. All rights reserved.
MRF7S21170HR3 MRF7S21170HSR3
Document Number: MRF7S21170H
Rev. 3, 9/2006
12
RF Device Data
Freescale Semiconductor