AOSMD AO8814L Common-drain dual n-channel enhancement mode field effect transistor Datasheet

AO8814
Common-Drain Dual N-Channel Enhancement Mode Field
Effect Transistor
General Description
Features
The AO8814 uses advanced trench technology to
provide excellent RDS(ON), low gate charge and
operation with gate voltages as low as 1.8V while
retaining a 12V VGS(MAX) rating. It is ESD protected.
This device is suitable for use as a uni-directional or
bi-directional load switch, facilitated by its commondrain configuration. Standard Product AO8814is Pbfree (meets ROHS & Sony 259 specifications).
AO8814L is a Green Product ordering option.
AO8814 and AO8814L are electrically identical.
VDS (V) = 20V
ID = 7.5 A (VGS = 10V)
RDS(ON) < 16mΩ (VGS = 10V)
RDS(ON) < 18mΩ (VGS = 4.5V)
RDS(ON) < 24mΩ (VGS = 2.5V)
RDS(ON) < 34mΩ (VGS = 1.8V)
ESD Rating: 2500V HBM
D1
D2
TSSOP-8
Top View
D1/D2
S1
S1
G1
1
2
3
4
8
7
6
5
D1/D2
S2
S2
G2
G1
G2
S2
S1
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
TA=25°C
Continuous Drain
Current A
Pulsed Drain Current
ID
IDM
TA=70°C
B
Junction and Storage Temperature Range
Alpha & Omega Semiconductor, Ltd.
±12
V
30
1.5
W
0.96
TJ, TSTG
°C
-55 to 150
Symbol
t ≤ 10s
Steady-State
Steady-State
A
6
PD
TA=70°C
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
Maximum Junction-to-Lead C
Units
V
7.5
TA=25°C
Power Dissipation A
Maximum
20
RθJA
RθJL
Typ
64
89
53
Max
83
120
70
Units
°C/W
°C/W
°C/W
AO8814
Electrical Characteristics (T J=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
Min
Conditions
ID=250µA, VGS=0V
1
IGSS
Gate-Body leakage current
VDS=0V, VGS=±10V
BVGSO
Gate-Source Breakdown Voltage
VDS=0V, IG=±250uA
±12
VGS(th)
Gate Threshold Voltage
VDS=VGS ID=250µA
0.5
ID(ON)
On state drain current
VGS=4.5V, VDS=5V
30
TJ=55°C
Gate resistance
Qgd
18
mΩ
VGS=2.5V, ID=6A
19
24
mΩ
VGS=1.8V, ID=5A
26
34
mΩ
VDS=5V, ID=7.5A
30
VGS=0V, VDS=10V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
VGS=4.5V, VDS=10V, ID=7.5A
Gate Drain Charge
tD(on)
Turn-On DelayTime
tr
Turn-On Rise Time
V
A
15
DYNAMIC PARAMETERS
Ciss
Input Capacitance
SWITCHING PARAMETERS
Qg
Total Gate Charge
Qgs
Gate Source Charge
1
VGS=4.5V, ID=7A
IS=1A,VGS=0V
Diode Forward Voltage
Maximum Body-Diode Continuous Current
Rg
0.71
16
VSD
Reverse Transfer Capacitance
V
22
Forward Transconductance
Output Capacitance
µA
13
gFS
Crss
µA
18
TJ=125°C
Coss
5
10
VGS=10V, ID=7.5A
IS
Units
V
VDS=16V, VGS=0V
Zero Gate Voltage Drain Current
Static Drain-Source On-Resistance
Max
20
IDSS
RDS(ON)
Typ
VGS=5V, VDS=10V, RL=1.3Ω,
RGEN=3Ω
0.74
mΩ
S
1
V
2.5
A
1390
pF
190
pF
150
pF
1.5
Ω
15.4
nC
1.4
nC
4
nC
6.2
ns
11
ns
40.5
ns
10
ns
ns
nC
tD(off)
Turn-Off DelayTime
tf
Turn-Off Fall Time
trr
Body Diode Reverse Recovery Time
IF=7.5A, dI/dt=100A/µs
15
Qrr
Body Diode Reverse Recovery Charge IF=7.5A, dI/dt=100A/µs
5.1
A: The value of R θJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C.
The value in any given application depends on the user's specific board design. The current rating is based on the t≤ 10s thermal
resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.
D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The
SOA curve provides a single pulse rating.
Rev 2: June 2005
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
AO8814
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
30
10V
20
VDS=5V
3V
4V
VGS =2V
15
ID(A)
ID(A)
20
10
10
125°C
5
VGS =1.5V
25°C
0
0
0
1
2
3
4
5
0.0
VDS(Volts)
1.0
50
Normalize ON-Resistance
1.6
40
VGS =1.8V
30
VGS =2.5V
20
VGS =4.5V
10
VGS =10V
0
0
5
10
15
1.5
2.0
2.5
VGS(Volts)
Figure 2: Transfer Characteristics
Figure 1: On-Regions Characteristics
RDS(ON)(mΩ)
0.5
VGS=2.5V
ID=6A
VGS=4.5V
1.4
ID=7A
VGS=1.8V
ID=5A
1.2
VGS=10V
ID=7.5A
1.0
0.8
20
0
ID(A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
25
50
75
100
125
150
175
Temperature (°C)
Figure 4: On-Resistance vs. Junction
Temperature
60
1E+01
ID=7.5A
1E+00
125°C
1E-01
40
IS(A)
RDS(ON)(mΩ)
50
125°C
30
1E-02
1E-03
20
1E-04
25°C
25°C
1E-05
10
0
2
4
6
8
VGS(Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
Alpha & Omega Semiconductor, Ltd.
0.0
0.2
0.4
0.6
0.8
VSD(Volts)
Figure 6: Body-Diode Characteristics
1.0
AO8814
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
2000
5
VDS=10V
ID=7.5A
Ciss
1600
Capacitance (pF)
VGS(Volts)
4
3
2
1200
800
Crss
400
1
0
0
0
5
10
15
0
20
100.0
10
15
20
40
TJ(Max)=150°C
TA=25°C
RDS(ON)
limited
10µs
1ms
0.1s
TJ(Max)=150°C
TA=25°C
30
100µs
Power (W)
10.0
5
VDS(Volts)
Figure 8: Capacitance Characteristics
Qg (nC)
Figure 7: Gate-Charge Characteristics
ID (Amps)
Coss
10ms
1.0
20
10
1s
10s
DC
0
0.001
0.1
0.1
1
10
100
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E)
VDS (Volts)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
ZθJA Normalized Transient
Thermal Resistance
10
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=83°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
PD
0.1
Ton
0.01
0.00001
0.0001
0.001
0.01
0.1
1
T
10
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
Alpha & Omega Semiconductor, Ltd.
100
1000
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