Vishay BFR92AW Silicon npn planar rf transistor Datasheet

Not for new design, this product will be obsoleted soon
BFR92A / BFR92AR / BFR92AW
Vishay Semiconductors
Silicon NPN Planar RF Transistor
1
SOT23
Features
•
•
•
•
•
High power gain
Low noise figure
e3
High transition frequency
Lead (Pb)-free component
Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
2
3
1
SOT23
3
Applications
2
1
SOT323
Wide band amplifier up to GHz range.
Mechanical Data
2
Typ: BFR92A
Case: SOT-23 Plastic case
Weight: approx. 8.0 mg
Pinning: 1 = Collector, 2 = Base, 3 = Emitter
Typ: BFR92AR
3
19150
Electrostatic sensitive device.
Observe precautions for handling.
Case: SOT-23 Plastic case
Weight: approx. 8.0 mg
Pinning: 1 = Collector, 2 = Base, 3 = Emitter
Typ: BFR92AW
Case: SOT-323 Plastic case
Weight: approx. 6.0 mg
Pinning: 1 = Collector, 2 = Base, 3 = Emitter
Parts Table
Part
Ordering code
Marking
Remarks
Package
BFR92A
BFR92AGELB-GS08
+P2
Tape and Reel
SOT-23
BFR92AR
BFR92ARGELB-GS08
+P5
Tape and Reel
SOT-23
BFR92AW
BFR92AW-GS08
WP2
Tape and Reel
SOT-323
Document Number 85033
Rev. 1.5, 08-Sep-08
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1
BFR92A / BFR92AR / BFR92AW
Vishay Semiconductors
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified
Symbol
Value
Unit
Collector-base voltage
Parameter
Test condition
VCBO
20
V
Collector-emitter voltage
VCEO
15
V
Emitter-base voltage
VEBO
2
V
Collector current
Total power dissipation
IC
30
mA
Ptot
200
mW
Tj
150
°C
Tstg
- 65 to + 150
°C
Symbol
Value
Unit
RthJA
450
K/W
Tamb ≤ 60 °C
Junction temperature
Storage temperature range
Maximum Thermal Resistance
Parameter
Junction ambient
1)
Test condition
1)
on glass fibre printed board (25 x 20 x 1.5) mm3 plated with 35 μm Cu
Electrical DC Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter
Max
Unit
VCE = 20 V, VBE = 0
ICES
100
μA
Collector-base cut-off current
VCB = 10 V, IE = 0
ICBO
100
nA
Emitter-base cut-off current
VEB = 2 V, IC = 0
IEBO
10
μA
Collector-emitter breakdown
voltage
IC = 1 mA, IB = 0
V(BR)CEO
15
hFE
65
100
150
Symbol
Min
Typ.
Max
Collector-emitter cut-off current
Test condition
DC forward current transfer ratio VCE = 10 V, IC = 14 mA
Symbol
Min
Typ.
V
Electrical AC Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Transition frequency
VCE = 10 V, IC = 14 mA,
f = 500 MHz
Collector-base capacitance
VCB = 10 V, f = 1 MHz
Collector-emitter capacitance
VCE = 10 V, f = 1 MHz
Emitter-base capacitance
Noise figure
Unit
6
GHz
Ccb
0.3
pF
Cce
0.15
pF
VEB = 0.5 V, f = 1 MHz
Ceb
0.65
pF
VCE = 10 V, IC = 2 mA,
ZS = 50 Ω, f = 800 MHz
F
1.8
dB
Power gain
VCE = 10 V, ZS = 50 Ω,
ZL = ZLopt, IC = 14 mA,
f = 800 MHz
Gpe
16
dB
Linear output voltage - two tone
intermodulation test
VCE = 10 V, IC = 14 mA,
dIM = 60 dB, f1 = 806 MHz,
f2 = 810 MHz, ZS = ZL = 50 Ω
V1 = V2
120
mV
Third order intercept point
VCE = 10 V, IC = 14 mA,
f = 800 MHz
IP3
24
dBm
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2
fT
Document Number 85033
Rev. 1.5, 08-Sep-08
BFR92A / BFR92AR / BFR92AW
Vishay Semiconductors
Common Emitter S-Parameters
VCE/V
IC/mA
f/MHz
IC/mA
f/MHz
LIN
MAG
ANG
LIN
MAG
ANG
LIN
MAG
ANG
LIN
MAG
100
0.902
-17.5
6.38
164.6
0.025
79.9
0.978
-7.6
300
0.761
-50.2
5.51
137.8
0.064
63.1
0.859
-19.3
500
0.577
-76.8
4.48
117.8
0.086
53.7
0.736
-24.2
800
0.399
-105.3
3.28
98.9
0.104
49.7
0.642
-25.3
1000
0.339
-121.9
2.79
90.0
0.114
50.3
0.618
-26.0
1200
0.303
-138.1
2.45
82.1
0.124
51.1
0.603
-28.0
1500
0.284
-163.3
2.07
71.4
0.140
53.1
0.577
-31.2
1800
0.272
172.9
1.79
62.5
0.157
55.5
0.560
-33.9
2000
0.278
159.4
1.65
57.3
0.171
56.6
0.558
-36.0
100
0.783
-27.2
12.84
155.8
0.023
76.3
0.934
-12.7
300
0.534
-69.6
9.12
122.8
0.052
61.9
0.711
-25.1
500
0.351
-97.6
6.41
104.8
0.068
59.5
0.580
-25.6
800
0.220
-128.3
4.28
89.8
0.091
61.1
0.518
-22.1
1000
0.188
-145.2
3.53
82.9
0.107
62.5
0.515
-22.2
1200
0.175
-162.0
3.04
76.5
0.124
62.8
0.510
-24.1
1500
0.189
175.1
2.51
67.8
0.149
63.0
0.494
-27.3
1800
0.200
153.5
2.16
60.2
0.175
62.4
0.483
-30.0
2000
0.214
140.6
1.98
55.8
0.194
61.6
0.481
-32.6
100
0.641
-38.1
19.40
146.3
0.020
73.2
0.869
-17.6
300
0.362
-85.8
11.09
112.0
0.043
65.2
0.597
-26.0
500
0.229
-116.7
7.27
97.3
0.062
66.3
0.496
-22.9
-18.1
2
5
5
10
14
5
Document Number 85033
Rev. 1.5, 08-Sep-08
S11
S21
S12
S22
ANG
800
0.148
-151.6
4.69
84.9
0.089
68.1
0.465
1000
0.136
-168.5
3.83
79.0
0.108
68.1
0.473
-18.4
1200
0.133
176.8
3.27
73.4
0.127
67.8
0.473
-20.6
1500
0.160
158.3
2.70
65.7
0.156
66.5
0.461
-24.6
1800
0.183
139.4
2.30
58.9
0.184
64.8
0.452
-27.4
2000
0.198
130.4
2.12
54.8
0.203
63.5
0.450
-30.1
100
0.566
-44.3
22.20
141.5
0.019
72.7
0.832
-19.4
300
0.301
-94.2
11.58
108.1
0.041
67.5
0.560
-25.1
500
0.195
-127.0
7.43
94.6
0.060
69.0
0.475
-20.9
-16.5
800
0.137
-164.6
4.78
83.2
0.089
70.1
0.456
1000
0.129
-179.9
3.88
77.6
0.109
69.9
0.466
-17.1
1200
0.132
167.7
3.30
72.3
0.128
69.1
0.469
-19.4
1500
0.162
153.1
2.72
64.9
0.157
67.5
0.456
-23.4
1800
0.183
136.6
2.32
58.1
0.185
65.6
0.448
-26.3
2000
0.204
127.4
2.13
54.1
0.205
64.1
0.446
-29.2
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3
BFR92A / BFR92AR / BFR92AW
Vishay Semiconductors
VCE/V
IC/mA
f/MHz
IC/mA
f/MHz
LIN
MAG
100
300
20
2
10
5
10
10
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4
14
S11
S21
S12
S22
ANG
LIN
MAG
ANG
LIN
MAG
ANG
LIN
MAG
ANG
0.484
-52.5
24.55
136.0
0.018
72.0
0.788
-20.7
0.251
-106.2
11.67
104.3
0.039
69.5
0.531
-22.8
500
0.181
-141.8
7.37
92.1
0.058
71.5
0.466
-18.3
800
0.144
-177.4
4.70
81.3
0.088
72.0
0.456
-14.4
1000
0.138
169.3
3.82
76.0
0.108
71.4
0.469
-15.3
1200
0.145
159.1
3.26
70.9
0.127
70.6
0.472
-18.1
1500
0.179
148.3
2.67
63.7
0.157
68.4
0.461
-22.4
1800
0.202
133.7
2.28
57.0
0.185
66.4
0.453
-25.4
2000
0.220
125.9
2.10
52.8
0.205
64.8
0.452
-28.4
100
0.915
-16.2
6.32
165.5
0.020
80.5
0.981
-6.2
300
0.780
-46.7
5.56
139.6
0.054
65.1
0.883
-16.1
500
0.597
-71.2
4.57
119.9
0.073
55.8
0.778
-20.4
800
0.405
-97.6
3.37
101.0
0.089
52.2
0.692
-21.6
1000
0.339
-113.1
2.87
92.3
0.098
53.0
0.677
-22.4
1200
0.294
-129.6
2.53
84.2
0.107
54.3
0.663
-24.0
1500
0.261
-155.8
2.13
73.7
0.121
56.8
0.643
-27.0
1800
0.240
179.2
1.84
64.8
0.136
59.2
0.630
-29.6
2000
0.243
163.2
1.70
59.8
0.149
61.1
0.630
-31.4
100
0.816
-24.3
12.50
157.4
0.019
77.2
0.947
-10.3
300
0.569
-62.7
9.15
125.3
0.044
63.6
0.761
-20.5
500
0.372
-87.9
6.55
106.9
0.059
60.6
0.647
-21.1
800
0.220
-114.2
4.41
91.6
0.079
62.3
0.592
-18.8
1000
0.175
-129.6
3.63
84.6
0.093
63.9
0.590
-19.1
1200
0.153
-145.8
3.13
78.3
0.107
64.8
0.589
-20.8
1500
0.153
-175.7
2.59
69.7
0.129
65.5
0.576
-24.1
1800
0.157
158.0
2.22
62.1
0.152
65.5
0.567
-26.6
2000
0.170
143.4
2.04
57.9
0.168
65.3
0.567
-28.7
100
0.696
-33.7
18.83
148.4
0.017
74.6
0.896
-13.8
300
0.397
-75.7
11.20
114.4
0.038
66.4
0.666
-20.8
500
0.237
-101.2
7.41
99.0
0.054
67.0
0.577
-18.6
800
0.132
-130.2
4.81
86.4
0.078
68.9
0.553
-15.5
1000
0.103
-149.3
3.92
80.4
0.094
69.4
0.560
-16.0
1200
0.097
-165.8
3.35
75.0
0.111
69.5
0.561
-18.2
1500
0.116
167.2
2.76
67.5
0.136
69.0
0.551
-21.9
1800
0.133
141.3
2.36
60.4
0.160
67.9
0.545
-24.4
2000
0.148
129.4
2.16
56.4
0.178
66.8
0.549
-27.1
100
0.639
-38.8
21.41
143.8
0.016
73.2
0.866
-15.2
300
0.339
-82.4
11.61
110.2
0.036
67.5
0.636
-19.8
500
0.199
-110.0
7.52
96.3
0.053
69.4
0.562
-16.9
800
0.113
-144.1
4.83
84.4
0.077
70.7
0.549
-14.2
1000
0.093
160.9
3.93
78.9
0.094
71.1
0.556
-14.9
Document Number 85033
Rev. 1.5, 08-Sep-08
BFR92A / BFR92AR / BFR92AW
Vishay Semiconductors
VCE/V
IC/mA
f/MHz
IC/mA
f/MHz
LIN
MAG
ANG
LIN
MAG
ANG
LIN
MAG
ANG
LIN
MAG
ANG
1200
0.090
179.0
3.36
73.7
0.110
70.5
0.560
-17.3
1500
0.118
158.6
2.76
66.4
0.136
69.8
0.550
-21.0
1800
0.137
137.7
2.35
59.5
0.161
68.4
0.546
-24.0
2000
0.155
125.7
2.16
55.6
0.178
67.4
0.548
-26.5
100
0.576
-45.8
23.38
138.5
0.015
72.0
0.836
-15.8
300
0.286
-91.7
11.55
106.1
0.034
69.0
0.620
-17.7
500
0.177
-123.1
7.34
93.4
0.051
71.3
0.565
-14.7
-12.6
20
S11
S21
S12
S22
800
0.113
-161.1
4.69
82.2
0.075
72.4
0.557
1000
0.101
-177.3
3.81
77.1
0.092
72.4
0.568
-13.8
1200
0.107
168.1
3.24
72.0
0.109
71.9
0.571
-16.4
1500
0.136
152.5
2.67
64.8
0.134
70.9
0.564
-20.4
1800
0.160
133.1
2.27
58.1
0.159
69.5
0.559
-23.5
2000
0.181
124.2
2.09
54.0
0.176
68.4
0.560
-25.9
Typical Characteristics (Tamb = 25 °C unless otherwise specified)
Ccb - Collector Base Capacitance ( pF )
Ptot - Total Power Dissipation (mW)
300
250
200
150
100
50
0
0
20
40
60
0.6
0.4
0.2
f = 1 MHz
0
0
5000
3.0
2000
V CE = 10 V
f = 500 MHz
1000
F - Noise Figure (dB)
3.5
3000
12
16
20
2.5
2.0
1.5
1.0
V CE = 10 V
f = 800 MHz
Z S = 50
0.5
0
0
0
12889
8
Figure 3. Collector Base Capacitance vs. Collector Base Voltage
6000
4000
4
V CB - Collector Base Voltage ( V )
13585
Figure 1. Total Power Dissipation vs. Ambient Temperature
f T - Transition Frequency (MHz)
0.8
80 100 120 140 160
Tamb - Ambient Temperature (°C)
96 12159
1.0
5
10
15
20
25
I C - Collector Current (mA)
Figure 2. Transition Frequency vs. Collector Current
Document Number 85033
Rev. 1.5, 08-Sep-08
0
30
12891
5
10
15
20
25
30
I C - Collector Current (mA)
Figure 4. Noise Figure vs. Collector Current
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5
BFR92A / BFR92AR / BFR92AW
Vishay Semiconductors
VCE = 10 V, IC = 10 mA, Z0 = 50 Ω
S12
S11
90°
j
120°
60°
2.0 GHz
j2
j0.5
1.5
150°
j5
j0.2
0.5
2.0 GHz
0
0.2
0.5
0.8
1
2
∞
5
0.3
-j0.2
180°
0.08
0°
0.16
-30°
-150°
-j2
-j0.5
0.1
-j5
0.1
13 526
30°
1.0
-60°
-120°
13 527
-j
-90°
Figure 7. Reverse Transmission Coefficient
Figure 5. Input Reflection Coefficient
S22
S21
j
90°
120°
0.1
60°
j2
j0.5
0.3
30°
150°
0.5
j5
j0.2
1.0
2.0 GHz
180°
8
16
0°
0
0.2
0.5
1
0.1
-j5
-j2
-j0.5
-60°
-120°
-90°
Figure 6. Forward Transmission Coefficient
6
∞
5
-30°
-150°
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0.8
2.0 GHz
-j0.2
13 528
2
13 529
-j
Figure 8.
Document Number 85033
Rev. 1.5, 08-Sep-08
BFR92A / BFR92AR / BFR92AW
Vishay Semiconductors
0.175 (0.007)
0.098 (0.005)
0.1 (0.004) max.
2.6 (0.102)
2.35 (0.092)
0.4 (0.016)
0.4 (0.016)
0.95 (0.037)
1.15 (0.045)
Package Dimensions in mm (Inches)
ISO Method E
3.1 (0.122)
Mounting Pad Layout
2.8 (0.110)
0.52 (0.020)
0.4 (0.016)
C
B
1.20 (0.047)
1.43 (0.056)
0.9 (0.035)
2.0 (0.079)
E
0.95 (0.037)
0.95 (0.037)
0.95 (0.037)
0.95 (0.037)
9511346
0.175 (0.007)
0.098 (0.005)
0.1 (0.004) max.
2.6 (0.102)
2.35 (0.092)
0.4 (0.016)
0.4 (0.016)
0.95 (0.037)
1.15 (0.045)
Package Dimensions in mm (Inches)
ISO Method E
3.1 (0.122)
Mounting Pad Layout
2.8 (0.110)
0.52 (0.020)
0.4 (0.016)
C
E
0.95 (0.037)
1.20 (0.047)
1.43 (0.056)
0.9 (0.035)
2.0 (0.079)
B
0.95 (0.037)
0.95 (0.037)
0.95 (0.037)
9511346
Document Number 85033
Rev. 1.5, 08-Sep-08
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7
BFR92A / BFR92AR / BFR92AW
Vishay Semiconductors
Package Dimensions in mm (Inches)
96 12236
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8
Document Number 85033
Rev. 1.5, 08-Sep-08
BFR92A / BFR92AR / BFR92AW
Vishay Semiconductors
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as
their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use
of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each
customer application by the customer. Should the buyer use Vishay Semiconductors products for any
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal
damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Document Number 85033
Rev. 1.5, 08-Sep-08
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9
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
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Document Number: 91000
Revision: 18-Jul-08
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