yangjie MBSK14S Schottky bridge rectifier Datasheet

RoHS
MBSK12S THRU MBSK110S
COMPLIANT
肖特基桥式整流器 Schottky Bridge Rectifier
■特征 Features
●
Io
■外形尺寸和印记
1.0A
Outline Dimensions and Mark
MBS
.014(0.35)
.006(0.15)
VRRM
20V~100V
● 肖特基芯片
Schottky chip
● 耐正向浪涌电流能力高
High surge forward current capability
● 低正向电压
Low VF
●
.008(0.20)
MAX
.157(4.00)
.142(3.60)
0.094
(2.40)
.276(7.0)
MAX
0.236
(6.00)
.102(2.60)
.087(2.20)
.193(4.90)
.177(4.50)
.043(1.10)
.028(0.70)
.053(1.53)
.037(0.95)
.053(1.53)
.037(0.95)
■用途 Applications
●
Mounting Pad Layout
.083(2.12)
.043(1.10)
.106(2.70)
.090(2.30)
作一般电源单相桥式整流用
General purpose 1 phase Bridge
rectifier applications
0.072
(1.84)
.118(3.0)
MAX
0.047
(1.20)
.033(0.84)
.022(0.56)
Dimensions in inches and (millimeters)
■极限值(绝对最大额定值)
Limiting Values(Absolute Maximum Rating)
参数名称
Item
反向重复峰值电压
Repetitive Peak Reverse
Voltage
平均整流输出电流
Average Rectified Output
Current
正向(不重复)浪涌电流
Surge(Nonrepetitive)Forward Current
正向浪涌电流的平方对电流
浪涌持续时间的积分值
Current Squared Time
存储温度
Storage Temperature
结温
Junction Temperature
符号 单位
Symbol Unit
VRRM
IO
条件
Conditions
12S 14S 16S 18S 110S
20
V
A
MBSK
60Hz正弦波,
电阻负载,Ta=25℃
60Hz sine wave,
R-load, Ta=25℃
40
60
安装在氧化铝基板上
On alumina substrate
1.0
安装在玻璃-环氧基板上
On glass-epoxi substrate
0.8
IFSM
A
60HZ正弦波,一个周期,Tj=25℃
60HZ sine wave, 1 cycle, Tj=25℃
40
2
It
A2S
1ms≤t<8.3ms Tj=25℃,单个二极管
1ms≤t<8.3ms Tj=25℃,Rating of per diode
6.6
Tstg
℃
-55 ~+150
Tj
℃
-55 ~+150
80
100
■电特性 (Ta=25℃ 除非另有规定)
Electrical Characteristics(Ta=25℃ Unless otherwise specified)
参数名称
Item
符号 单位
Symbol Unit
测试条件
Test Condition
最大值
Max
正向峰值电压
Peak Forward Voltage
VFM
V
IFM=0.5A, 脉冲测试,单个二极管的额定值IFM=0.5A,
Pulse measurement, Rating of per diode
反向峰值电流
Peak Reverse Current
IRRM
mA
VRM=VRRM ,脉冲测试,单个二极管的额定值
VRM=VRRM , Pulse measurement, Rating of per diode
0.5
结和环境之间,安装在氧化铝基板上
Between junction and ambient, On alumina substrate
76
结和环境之间,安装在玻璃-环氧基板上
Between junction and ambient, On glass-epoxi
substrate
134
结和引线之间
Between junction and lead
20
热阻
Thermal Resistance
RθJ-A
℃/W
RθJ-L
S-S150
Rev. 1.2, 28-Apr-14
扬州扬杰电子科技股份有限公司
Yangzhou Yangjie Electronic Technology Co., Ltd.
0.55
0.65
0.75
www.21yangjie.com
MBSK12S THRU MBSK110S
图 1 : Io-Ta 曲线
FIG1:Io-Ta Curve
图2:耐正向浪涌电流曲线
FIG2:Surge Forward Current Capadility
1.8
焊接区soldering land
导体箔conductor layer
基板厚度substrate thickness
1.5
①
1mm×1mm
35um
②
1mm×1mm
20um
0.64mm
正弦波
sine wave
70
0
60
IFSM
Io(A)
■特性曲线(典型) Characteristics(Typical)
8.3ms 8.3ms
1cycle
②在氧化铝基板上
on alumina substrate
1.2
50
正弦波,电阻负载,
sine wave R-load
0.9
不重复
non-repetitive
Tj=25℃
40
30
0.6
20
①在玻璃-环氧基板上
on glass-epoxi substrate
0.3
10
0
0
40
80
160
Ta(℃ )
120
2
5
10
20
50
100
Number of Cycles
图4:反向电流曲线
FIG4:Typical Reverse Characteristics
100
6
4
1
IR(mA)
IF(A)
图3:正向电压曲线
FIG3: Forward Voltage
0
MBSK12S~MBSK14S
2
Tj=150℃
10
1
1
0.5
MBSK18S~MBSK110S
MBSK16S
Tj=25℃
Ta=25℃
0.1
0.1
0.05
0.01
MBSK12S~MBSK14S
MBSK16S
MBSK18S~MBSK110S
0.02
0.001
0.01
0.4
0.5
S-S150
Rev. 1.2, 28-Apr-14
0.6
0.7
0.8
0.9
VF(V)
0
20
扬州扬杰电子科技股份有限公司
Yangzhou Yangjie Electronic Technology Co., Ltd.
40
60
80
100
Voltage(%)
www.21yangjie.com
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