Rohm CDZ11B Zener diode Datasheet

Zener diode
CDZ8.2B
Applications
Constant voltage control
Dimensions (Unit : mm)
Land size figure (Unit : mm)
0.16±0.05
0.55
②
VMN2
0.156
0.37±0.03
0.35±0.1
Construction
Silicon epitaxial planar
0.45
①
1.0±0.05
Features
1) 2-pin ultra mini-mold type for high-density
mounting (VMN2).
2) High reliability.
3) Can be mounted automatically, using chip
mounter.
0.9±0.05
0.5
0.45
0.6±0.05
Structure
ROHM : VMN2
①
② dot (year week factory) + day
EX. CDZ3.6B
Taping specifications (Unit : mm)
2±0.05
0.7±0.05
2±0.05
φ1.55
0.2±0.05
8.0±0.2
1.1±0.05
3.5±0.05
1.75±0.1
4±0.1
φ0.5
Absolute maximum ratings (Ta=25C)
Parameter
Symbol
Power dissipation
P
Junction temperature
Tj
Storage temperature
Tstg
Operating temperature
Topr
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Limits
100
150
-55 to +150
-55 to +150
1/4
4.0±0.1
0.52
Unit
mW
℃
℃
℃
2011.10 - Rev.B
CDZ8.2B
Data Sheet
Electrical characteristics (Ta=25C)
Symbol
Zener voltage :Vz(V)
TYP.
CDZ 3.6B
CDZ 3.9B
CDZ 4.3B
CDZ 4.7B
CDZ 5.1B
CDZ 5.6B
CDZ 6.2B
CDZ 6.8B
CDZ 7.5B
CDZ 8.2B
CDZ 9.1B
CDZ 10B
CDZ 11B
CDZ 12B
CDZ 13B
CDZ 15B
CDZ 16B
MIN.
3.600
3.890
MAX.
3.845
4.160
4.170
4.550
4.980
5.490
6.060
6.650
7.280
8.020
8.850
9.770
10.760
11.740
12.910
14.340
15.850
4.430
4.750
5.200
5.730
6.330
6.930
7.600
8.360
9.230
10.210
11.220
12.240
13.490
14.980
16.510
Iz(mA)
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
Operating resistance :Zz(Ω)
MAX.
100
100
100
100
80
60
60
40
30
30
30
30
30
30
37
42
50
Iz(mA)
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
Rising operating
resistance:Zz(Ω)
Reverse current :
IR(uA)
MAX.
1000.0
1000.0
MAX.
10.0
5.0
5.0
2.0
2.0
1.0
1.0
0.5
0.5
0.5
0.5
0.1
0.1
0.1
0.1
0.1
0.1
Iz(mA)
1.0
1.0
1.0
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
1000.0
800.0
500.0
200.0
100.0
60.0
60.0
60.0
60.0
60.0
60.0
80.0
80.0
80.0
80.0
VR(V)
1.0
1.0
1.0
1.0
1.5
2.5
3.0
3.5
4.0
5.0
6.0
7.0
8.0
9.0
10.0
11.0
12.0
Type No.
TYPE
CDZ 3.6B
CDZ 3.9B
CDZ 4.3B
CDZ 4.7B
CDZ 5.1B
CDZ 5.6B
CDZ 6.2B
CDZ 6.8B
CDZ 7.5B
TYPE NO.
7
1
2
3
5
7
C
E
F
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TYPE
CDZ 8.2B
CDZ 9.1B
CDZ 10B
CDZ 11B
CDZ 12B
CDZ 13B
CDZ 15B
CDZ 16B
TYPE NO.
H
J
K
L
N
S
C
E
2/4
2011.10 - Rev.B
CDZ8.2B
Data Sheet
Electrical characteristic curves (Ta=25C)
10
ZENER CURRENT:Iz(mA)
1
0.1
5.1
0.01
4.3
5.6
4.7
6.8
6.2
3.9
7.5
8.2
9.1
12
11
10
16
15
13
3.6
0.001
0
5
10
15
20
ZENER VOLTAGE:Vz(V)
Vz-Iz CHARACTERISTICS
10000
100
REVERSE SURGE MAXIMUM
POWER:PRSM(W)
POWER DISSIPATION:Pd(W)
120
80
60
40
20
0
25
50
75
100
125
150
10
1
AMBIENT TEMPERATURE:Ta(℃)
Pd-Ta CHARACTERISTICS
35
30
0.06
25
0.04
20
0.02
15
0
10
-0.02
-0.04
5
-0.06
0
-0.08
-5
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TRANSIENT
THAERMAL IMPEDANCE:Rth (℃/W)
0.1
0.08
c 2011 ROHM Co., Ltd. All rights reserved.
○
0.1
1
10
100
Rth(j-a)
1000
TEMP.COEFFICIENCE:γz(mV/℃)
40
10
20
30
ZENER VOLTAGE:Vz(V)
γz-Vz CHARACTERISTICS
0.01
TIME:t(ms)
PRSM-TIME CHARACTERISTICS
0.12
0
t
100
0.1
0.001
0
TEMP.COEFFICIENCE:γz(%/℃)
PRSM
1000
10
3/4
Mounted on epoxy board
IM=1mA
IF=10mA
1
1ms
time
300us
0.1
0.001
40
Rth(j-c)
100
0.01
0.1
1
10
100
TIME:t(s)
Rth-t CHARACTERISTICS
1000
2011.10 - Rev.B
CDZ8.2B
Data Sheet
Ta=125℃
100
10
100
Ta=25℃
f=1MHz
Ta=75℃
Ta=-25℃
Ta=125℃
0.1
0.01
Ta=75℃
1
Ta=25℃
0.1
0.01
Ta=-25℃
7
7.5
8
8.5
ZENER VOLTAGE:Vz(V)
Vz-Iz CHARACTERISTICS
1
0
9
1
2
3
4
REVERSE VOLTAGE:VR(V)
VR-IR CHARACTERISTICS
0
5
8.3
8.2
AVE:8.212V
8.1
0.8
0.7
0.6
0.5
0.4
0.3
0.2
AVE:0.073nA
0.1
Vz DISPERSION MAP
5
Ta=25℃
f=1MHz
VR=0V
n=10pcs
80
70
60
50
40
30
20
AVE:36.38pF
10
0
8
2
3
4
REVERSE VOLTAGE:VR(V)
VR-Ct CHARACTERISTICS
90
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
Ta=25℃
VR=5.0V
n=30pcs
0.9
REVERSE CURRENT:IR(nA)
8.4
1
100
1
8.5
Ta=25℃
IZ=5mA
n=30pcs
10
0.001
0.0001
0.001
ZENER VOLTAGE:Vz(V)
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
1
REVERSE CURRENT:IR(nA)
ZENER CURRENT:Iz(mA)
10
0
IR DISPERSION MAP
Ct DISPERSION MAP
DYNAMIC IMPEDANCE:Zz(Ω)
100
10
1
0.1
1
ZENER CURRENT:Iz(mA)
Zz-Iz CHARACTERISTICS
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10
4/4
2011.10 - Rev.B
Notice
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R1120A
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