FQB12P20 / FQI12P20 October 2008 QFET ® FQB12P20 / FQI12P20 200V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switching DC/DC converters. • • • • • • • -11.5A, -200V, RDS(on) = 0.47Ω @VGS = -10 V Low gate charge ( typical 31 nC) Low Crss ( typical 30 pF) Fast switching 100% avalanche tested Improved dv/dt capability RoHS Compliant S D ! ● ● G! ▶ ▲ G S ● D2-PAK G D S FQB Series I2-PAK FQI Series ! D Absolute Maximum Ratings Symbol VDSS ID TC = 25°C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current FQB12P20 / FQI12P20 -200 Units V - Continuous (TC = 100°C) IDM Drain Current VGSS Gate-Source Voltage EAS Single Pulsed Avalanche Energy IAR EAR dv/dt PD TJ, TSTG TL - Pulsed (Note 1) -11.5 A -7.27 A -46 A ± 30 V (Note 2) 810 mJ Avalanche Current (Note 1) -11.5 A Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TA = 25°C) * (Note 1) 12 -5.5 3.13 mJ V/ns W 120 0.96 -55 to +150 W W/°C °C 300 °C (Note 3) Power Dissipation (TC = 25°C) - Derate above 25°C Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds Thermal Characteristics Symbol RθJC Parameter Thermal Resistance, Junction-to-Case Typ -- Max 1.04 Units °C/W RθJA Thermal Resistance, Junction-to-Ambient * -- 40 °C/W RθJA Thermal Resistance, Junction-to-Ambient -- 62.5 °C/W * When mounted on the minimum pad size recommended (PCB Mount) ©2008 Fairchild Semiconductor International Rev. A1, Oct 2008 Symbol TC = 25°C unless otherwise noted Parameter Test Conditions Min Typ Max Units -200 -- -- V -- - -- V/°C Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = -250 µA ∆BVDSS / ∆TJ Breakdown Voltage Temperature Coefficient ID = -250 µA, Referenced to 25°C IDSS IGSSF IGSSR VDS = -200 V, VGS = 0 V -- -- -1 µA VDS = -160 V, TC = 125°C -- -- -10 µA Gate-Body Leakage Current, Forward VGS = -30 V, VDS = 0 V -- -- -100 nA Gate-Body Leakage Current, Reverse VGS = 30 V, VDS = 0 V -- -- 100 nA Zero Gate Voltage Drain Current On Characteristics VGS(th) Gate Threshold Voltage VDS = VGS, ID = -250 µA -3.0 -- -5.0 V RDS(on) Static Drain-Source On-Resistance VGS = -10 V, ID = -5.75 A -- 0.36 0.47 Ω gFS Forward Transconductance VDS = -40 V, ID = -5.75 A -- 6.4 -- S -- 920 1200 pF -- 190 250 pF -- 30 40 pF (Note 4) Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance VDS = -25 V, VGS = 0 V, f = 1.0 MHz Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge VDD = -100 V, ID = -11.5 A, RG = 25 Ω (Note 4, 5) VDS = -160 V, ID = -11.5 A, VGS = -10 V (Note 4, 5) -- 20 50 ns -- 195 400 ns -- 40 90 ns -- 60 130 ns -- 31 40 nC -- 8.1 -- nC -- 16 -- nC Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current -- -- -11.5 A ISM -- -- -46 A VSD Maximum Pulsed Drain-Source Diode Forward Current VGS = 0 V, IS = -11.5 A Drain-Source Diode Forward Voltage -- -- -5.0 V trr Reverse Recovery Time Qrr Reverse Recovery Charge VGS = 0 V, IS = -11.5 A, dIF / dt = 100 A/µs (Note 4) -- 180 -- ns -- 1.44 -- µC Notes: 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L = 9.2mH, IAS = -11.5A, VDD = -50V, RG = 25 Ω, Starting TJ = 25°C 3. ISD ≤ -11.5A, di/dt ≤ 300A/µs, VDD ≤ BVDSS, Starting TJ = 25°C 4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2% 5. Essentially independent of operating temperature ©2008 Fairchild Semiconductor International Rev. A1, Oct 2008 FQB12P20 / FQI12P20 Elerical Characteristics VGS -15.0 V -10.0 V -8.0 V -7.0 V -6.5 V -6.0 V Bottom : -5.5 V Top : -I D, Drain Current [A] 1 10 -I D , Drain Current [A] 1 10 0 10 ※ Notes : 1. 250μs Pulse Test 2. TC = 25℃ 150℃ 0 10 25℃ ※ Notes : 1. VDS = -40V 2. 250μs Pulse Test -55℃ -1 -1 10 -1 0 10 10 1 10 2 10 4 6 8 10 -VGS , Gate-Source Voltage [V] -VDS, Drain-Source Voltage [V] Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics 1.5 1 10 -I DR , Reverse Drain Current [A] RDS(on) [ Ω ], Drain-Source On-Resistance 2.0 VGS = - 10V VGS = - 20V 1.0 0.5 ※ Note : TJ = 25℃ 0 10 150℃ ※ Notes : 1. VGS = 0V 2. 250μs Pulse Test 25℃ -1 0.0 0 10 20 30 40 10 0.0 0.5 -ID , Drain Current [A] 1.0 1.5 2.0 2.5 3.0 -VSD , Source-Drain Voltage [V] Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature 12 2400 Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd 1600 ※ Notes : 1. VGS = 0 V 2. f = 1 MHz Ciss Coss 1200 800 Crss 400 0 -1 10 VDS = -40V 10 -V GS , Gate-Source Voltage [V] 2000 Capacitance [pF] FQB12P20 / FQI12P20 Typical Characteristics VDS = -100V VDS = -160V 8 6 4 2 ※ Note : ID = -11.5 A 0 0 10 1 10 -VDS, Drain-Source Voltage [V] Figure 5. Capacitance Characteristics ©2008 Fairchild Semiconductor International 0 5 10 15 20 25 30 35 QG, Total Gate Charge [nC] Figure 6. Gate Charge Characteristics Rev. A1, Oct 2008 (Continued) 2.5 1.2 2.0 1.1 RDS(ON) , (Normalized) Drain-Source On-Resistance -BV DSS , (Normalized) Drain-Source Breakdown Voltage FQB12P20 / FQI12P20 Typical Characteristics 1.0 ※ Notes : 1. VGS = 0 V 2. ID = -250 μA 0.9 0.8 -100 -50 0 50 100 150 1.5 1.0 ※ Notes : 1. VGS = -10 V 2. ID = -5.75 A 0.5 0.0 -100 200 -50 0 o 50 100 150 200 o TJ, Junction Temperature [ C] TJ, Junction Temperature [ C] Figure 7. Breakdown Voltage Variation vs. Temperature Figure 8. On-Resistance Variation vs. Temperature 12 Operation in This Area is Limited by R DS(on) 2 10 10 1 ms -I D, Drain Current [A] -I D, Drain Current [A] 100 µs 1 10 10 ms DC 0 10 ※ Notes : o 1. TC = 25 C 8 6 4 2 o 2. TJ = 150 C 3. Single Pulse -1 10 0 1 10 0 25 2 10 10 50 100 125 150 Figure 10. Maximum Drain Current vs. Case Temperature 0 D = 0 .5 ※ N o te s : 1 . Z θ J C ( t ) = 1 . 0 4 ℃ /W M a x . 2 . D u ty F a c t o r , D = t 1 /t 2 3 . T J M - T C = P D M * Z θ J C( t ) 0 .2 10 0 .1 -1 0 .0 5 PDM 0 .0 2 0 .0 1 θ JC ( t) , T h e r m a l R e s p o n s e Figure 9. Maximum Safe Operating Area 10 75 TC, Case Temperature [℃] -VDS, Drain-Source Voltage [V] t1 Z s in g le p u ls e 10 t2 -2 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 t 1 , S q u a r e W a v e P u ls e D u r a t io n [ s e c ] Figure 11. Transient Thermal Response Curve ©2008 Fairchild Semiconductor International Rev. A1, Oct 2008 FQB12P20 / FQI12P20 Gate Charge Test Circuit & Waveform VGS Same Type as DUT 50KΩ Qg 200nF 12V -10V 300nF VDS VGS Qgs Qgd DUT -3mA Charge Resistive Switching Test Circuit & Waveforms VDS RL t on VDD VGS RG td(on) VGS t off tr td(off) tf 10% DUT -10V VDS 90% Unclamped Inductive Switching Test Circuit & Waveforms BVDSS 1 EAS = ---- L IAS2 -------------------2 BVDSS - VDD L VDS tp ID RG VDD DUT -10V tp ©2008 Fairchild Semiconductor International VDD Time VDS (t) ID (t) IAS BVDSS Rev. A1, Oct 20008 FQB12P20 / FQI12P20 Peak Diode Recovery dv/dt Test Circuit & Waveforms + VDS DUT _ I SD L Driver RG VGS VGS ( Driver ) I SD ( DUT ) Compliment of DUT (N-Channel) VDD • dv/dt controlled by RG • ISD controlled by pulse period Gate Pulse Width D = -------------------------Gate Pulse Period 10V Body Diode Reverse Current IRM di/dt IFM , Body Diode Forward Current VDS ( DUT ) VSD Body Diode Forward Voltage Drop VDD Body Diode Recovery dv/dt ©2008 Fairchild Semiconductor International Rev. A1, Oct 2008 FQB12P20 / FQI12P20 Mechanical Dimensions D2 - PAK Dimensions in Millimeters ©2008 Fairchild Semiconductor International Rev. A1, Oct 2008 FQB12P20 / FQI12P20 Mechanical Dimensions I2 - PAK Dimensions in Millimeters ©2008 Fairchild Semiconductor International Rev. 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