PD - 95320
IRFL9110PbF
HEXFET® Power MOSFET
Surface Mount
Available in Tape & Reel
Dynamic dv/dt Rating
Repetitive Avalanche Rated
P-Channel
Fast Switching
Ease of Paralleling
Lead-Free
D
VDSS = -100V
RDS(on) = 1.2Ω
G
ID = -1.1A
S
Description
Third Generation HEXFETs from International Rectifier
provide the designer with the best combination of fast
switching, ruggedized device design, low on-resistance
and cost-effectiveness.
The SOT-223 package is designed for surface-mount using
vapor phase, infra red, or wave soldering techniques. Its
unique package design allows for easy automatic pick-andplace as with other SOT or SOIC packages but has the
added advantage of improved thermal performance due to
an enlarged tab for heatsinking. Power dissipation of
grreater than 1.25W is possible in a typical surface mount
application.
SOT-223
Absolute Maximum Ratings
Parameter
ID @ Tc = 25°C
ID @ Tc = 100°C
IDM
PD @Tc = 25°C
PD @TA = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ, TSTG
Max.
Continuous Drain Current, VGS @ -10 V
Continuous Drain Current, VGS @ -10 V
Pulsed Drain Current Power Dissipation
Power Dissipation (PCB Mount)**
Linear Derating Factor
Linear Derating Factor (PCB Mount)**
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt Junction and Storage Temperature Range
Soldewring Temperature, for 10 seconds
Units
-1.1
-0.69
-8.8
3.1
2.0
0.025
0.017
-/+20
100
-1.1
0.31
-5.5
-55 to + 150
A
W
W/°C
V
mJ
A
mJ
V/ns
300 (1.6mm from case)
°C
Thermal Resistance
Parameter
RθJC
RθJA
Junction-to-PCB
Junction-to-Ambient. (PCB Mount)**
Typ.
Max.
–––
–––
40
60
Units
°C/W
** When mounted on 1'' SQUARE pcb (FR-4 or G-10 Material).
For recommended footprint and soldering techniques refer to application note #AN-994.
www.irf.com
1
05/26/04
IRFL9110PbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
∆V(BR)DSS/∆TJ
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Min. Typ. Max. Units
Conditions
-100 ––– –––
V
VGS = 0V, ID = 250µA
––– -0.091 ––– V/°C Reference to 25°C, I D = 1mA
RDS(on)
VGS(th)
gfs
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
IDSS
Drain-to-Source Leakage Current
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
–––
-2.0
0.82
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
––– 1.2
––– -4.0
––– –––
––– -100
––– -500
––– -100
––– 100
––– 8.7
––– 2.2
––– 4.1
10 –––
27 –––
15 –––
17
–––
LD
Internal Drain Inductance
–––
4.0
–––
LS
Internal Source Inductance
–––
6.0
–––
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
–––
–––
–––
200
94
18
–––
–––
–––
V(BR)DSS
IGSS
Ω
V
S
µA
nA
nC
ns
nH
VGS = -10V, ID = 0.66A VDS = VGS, ID = 250µA
VDS = -50V, ID = 0.66 A VDS = -100V, VGS = 0V
VDS = -80V, VGS = 0V, TJ = 125°C
VGS = -20V
VGS = 20V
ID =-4.0A
VDS =-80V
VGS = -10V, See Fig. 6 and 13 VDD = -50V
ID = -4.0A
RG = 24 Ω
RD = 11 Ω, See Fig. 10 Between lead, 6mm(0.25in)
from package and center
of die contact.
D
G
S
pF
VGS = 0V
VDS = 25V
ƒ = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
IS
ISM
VSD
trr
Qrr
ton
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode) Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
Min. Typ. Max. Units
Conditions
MOSFET symbol
––– ––– -1.1
showing the
A
G
integral reverse
––– ––– -8.8
p-n junction diode.
––– ––– -5.5
V
TJ = 25°C, IS = -1.1A, VGS = 0V ––– 80 160
ns
TJ = 25°C, I F =-4.0A
––– 0.15 0.30
µC
di/dt = 100A/µs Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
D
S
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
VDD=-25V, starting TJ = 25°C, L =7.7 mH
RG = 25Ω, IAS = -4.4A. (See Figure 12)
2
ISD ≤ -4.0A, di/dt ≤−75A/µs, VDD ≤ V(BR)DSS,
TJ ≤ 150°C
Pulse width ≤ 300µs; duty cycle ≤ 2%.
www.irf.com
IRFL9110PbF
www.irf.com
3
IRFL9110PbF
4
www.irf.com
IRFL9110PbF
www.irf.com
5
IRFL9110PbF
6
www.irf.com
IRFL9110PbF
www.irf.com
7
IRFL9110PbF
SOT-223 (TO-261AA) Package Outline
Dimensions are shown in milimeters (inches)
SOT-223 (TO-261AA) Part Marking Information
HEXFET PRODUCT MARKING
THIS IS AN IRFL014
PART NUMBER
INTERNATIONAL
RECTIFIER
LOGO
FL014
314P
TOP
8
LOT CODE
AXXXX
A = ASSEMBLY SITE
DATE CODE
CODE
(YYWW)
YY = YEAR
WW = WEEK
P = DESIGNATES LEAD-FREE
PRODUCT (OPTIONAL)
BOTTOM
www.irf.com
IRFL9110PbF
SOT-223 (TO-261AA) Tape & Reel Information
Dimensions are shown in milimeters (inches)
2.05 (.080)
1.95 (.077)
TR
4.10 (.161)
3.90 (.154)
0.35 (.013)
0.25 (.010)
1.85 (.072)
1.65 (.065)
7.55 (.297)
7.45 (.294)
16.30 (.641)
15.70 (.619)
7.60 (.299)
7.40 (.292)
1.60 (.062)
1.50 (.059)
TYP.
FEED DIRECTION
12.10 (.475)
11.90 (.469)
2.30 (.090)
2.10 (.083)
7.10 (.279)
6.90 (.272)
NOTES :
1. CONTROLLING DIMENSION: MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
3. EACH O330.00 (13.00) REEL CONTAINS 2,500 DEVICES.
13.20 (.519)
12.80 (.504)
15.40 (.607)
11.90 (.469)
4
330.00
(13.000)
MAX.
NOTES :
1. OUTLINE COMFORMS TO EIA-418-1.
2. CONTROLLING DIMENSION: MILLIMETER..
3. DIMENSION MEASURED @ HUB.
4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.
50.00 (1.969)
MIN.
18.40 (.724)
MAX.
14.40 (.566)
12.40 (.488)
4
3
Data and specifications subject to change without notice.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 05/04
www.irf.com
9