Single P-channel MOSFET ELM13401CA-S ■General description ■Features ELM13401CA-S uses advanced trench technology to provide excellent Rds(on), low gate charge and low gate resistance. • • • • • Vds=-30V Id=-4.2A (Vgs=-10V) Rds(on) < 50mΩ (Vgs=-10V) Rds(on) < 65mΩ (Vgs=-4.5V) Rds(on) < 120mΩ (Vgs=-2.5V) ■Maximum absolute ratings Parameter Drain-source voltage Gate-source voltage Ta=25°C Ta=70°C Continuous drain current Pulsed drain current Ta=25°C Ta=70°C Power dissipation Symbol Limit Unit Vds Vgs -30 ±12 V V Id -4.2 -3.5 A 1 Idm -30 A 2 W 1 Pd Junction and storage temperature range Tj, Tstg 1.4 1.0 -55 to 150 Note °C ■Thermal characteristics Parameter Symbol Maximum junction-to-ambient Maximum junction-to-ambient Maximum junction-to-lead t≤10s Steady-state Steady-state Rθja Rθjl ■Pin configuration Typ. Max. Unit 65 85 43 90 125 60 °C/W °C/W °C/W 1 2 1 3 ■Circuit SOT-23(TOP VIEW) 3 Note D Pin No. Pin name 1 2 GATE SOURCE 3 DRAIN G S 4- 1 Single P-channel MOSFET ELM13401CA-S ■Electrical characteristics Parameter STATIC PARAMETERS Symbol Condition Min. Drain-source breakdown voltage BVdss Id=-250μA, Vgs=0V -30 Zero gate voltage drain current Idss Vds=-24V Vgs=0V Gate-body leakage current Igss Vds=0V, Vgs=±12V Gate threshold voltage On state drain current Static drain-source on-resistance Rds(on) Forward transconductance Diode forward voltage Max. body-diode continuous current Gfs Vsd Is DYNAMIC PARAMETERS Input capacitance Ciss Output capacitance Reverse transfer capacitance Gate resistance Coss Crss Rg SWITCHING PARAMETERS Total gate charge Gate-source charge Qg Qgs V -1 -5 μA ±100 nA -1.0 -1.3 V A 42 50 75 mΩ 53 80 65 120 mΩ mΩ -1.00 -2.2 S V A Tj=55°C Vgs(th) Vds=Vgs, Id=-250μA Id(on) Vgs=-4.5V, Vds=-5V Vgs=-10V Id=-4.2A Typ. -0.7 -25 Tj=125°C Vgs=-4.5V, Id=-4A Vgs=-2.5V, Id=-1A Vds=-5V, Id=-5A Is=-1A, Vgs=0V Vgs=0V, Vds=-15V, f=1MHz Vgs=0V, Vds=0V, f=1MHz Vgs=-4.5V, Vds=-15V Id=-4A 7 Ta=25°C Max. Unit 11 -0.75 954 pF 115 77 6 pF pF Ω 9.4 2.0 nC nC Gate-drain charge Turn-on delay time Turn-on rise time Qgd td(on) tr Vgs=-10V, Vds=-15V 3.0 6.3 3.2 nC ns ns Turn-off delay time Turn-off fall time Body diode reverse recovery time td(off) Rl=3.6Ω, Rgen=6Ω tf trr If=-4A, dl/dt=100A/μs 38.2 12.0 20.2 ns ns ns 11.2 nC Body diode reverse recovery charge Qrr If=-4A, dl/dt=100A/μs NOTE : 1. The value of Rθja is measured with the device mounted on 1in² FR-4 board of 2oz. Copper, in still air environment with Ta=25°C. The value in any given applications depends on the user’s specific board design, The current rating is based on the t ≤ 10s themal resistance rating. 2. Repetitive rating, pulse width limited by junction temperature. 3. The Rθja is the sum of the thermal impedance from junction to lead Rθjl and lead to ambient. 4. The static characteristics in Figures 1 to 6 are obtained using 80μs pulses, duty cycle 0.5%max. 5. These tests are performed with the device mounted on 1in² FR-4 board with 2oz. Copper, in a still air environment with Ta=25°C. The SOA curve provides a single pulse rating. 4- 2 Single P-channel MOSFET ELM13401CA-S ■Typical electrical and thermal characteristics 10 25.00 -10V Vds=-5V -4.5V 20.00 8 15.00 -Id (A) -Id (A) -3V -2.5V 10.00 Vgs=-2V 5.00 0.00 0.00 6 125°C 4 25°C 2 0 1.00 2.00 3.00 4.00 5.00 0 0.5 120 Normalized On-Resistance Rds(on) (m� ) 1.5 2 2.5 3 1.8 100 80 Vgs=-2.5V Vgs=-4.5V 60 40 Vgs=-10V 20 0.00 Id=-3.5A, Vgs=-4.5V 1.6 Id=-3.5A, Vgs=-10V 1.4 Vgs=-2.5V 1.2 Id=-1A 1 0.8 2.00 4.00 6.00 8.00 10.00 0 -Id (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 1.0E+01 190 170 1.0E+00 150 Id=-2A 1.0E-01 130 -Is (A) Rds(on) (m� ) 1 -Vgs (Volts) Figure 2: Transfer Characteristics -Vds (Volts) Fig 1: On-Region Characteristics 110 90 125°C 70 125°C 1.0E-02 1.0E-03 25°C 1.0E-04 50 25°C 1.0E-05 30 1.0E-06 10 0 2 4 6 8 0.0 10 0.2 0.4 0.6 0.8 1.0 -Vsd (Volts) Figure 6: Body-Diode Characteristics -Vgs (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 4- 3 1.2 Single P-channel MOSFET ELM13401CA-S 5 1200 Capacitance (pF) 4 -Vgs (Volts) 1400 Vds=-15V Id=-4A 3 2 1 1000 Ciss 800 600 400 0 0 2 4 6 8 10 0 12 0 -Qg (nC) Figure 7: Gate-Charge Characteristics Tj(max)=150°C Ta=25°C 10ms 1.0 20 25 30 Tj(max)=150°C Ta=25°C 30 100�s 1ms 20 10 1s 10s DC 0.1 1 10 0 0.001 100 Figure 9: Maximum Forward Biased Safe Operating Area (Note E) D=Ton/T Tj,pk=Ta+Pdm.Z�ja.R�ja R�ja=90°C/W 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) -Vds (Volts) Z�ja Normalized Transient Thermal Resistance 15 10�s 0.1s 10 10 40 Rds(on) 10.0 limited 0.1 5 -Vds (Volts) Figure 8: Capacitance Characteristics Power (W) -Id (Amps) 100.0 Crss Coss 200 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 Pd 0.1 0.01 0.00001 Ton T Single Pulse 0.0001 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance 4- 4 100 1000