TM UniFET FDP75N08 75V N-Channel MOSFET Features Description • • • • • • These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switched mode power supplies, active power factor correction, electronic lamp ballast based on half bridge topology. 75A, 75V, RDS(on) = 0.011Ω @VGS = 10 V Low gate charge ( typical 150 nC) Low Crss ( typical 85 pF) Fast switching 100% avalanche tested Improved dv/dt capability D G TO-220 G DS FDP Series S Absolute Maximum Ratings Symbol Parameter FDP75N08 Units VDSS Drain-Source Voltage 75 V ID Drain Current - Continuous (TC = 25°C) 75 A IDM Drain Current - Pulsed - Continuous (TC = 100°C) 47.7 A (Note 1) 300 A ± 20 V 1164 mJ VGSS Gate-Source Voltage EAS Single Pulsed Avalanche Energy (Note 2) IAR Avalanche Current (Note 1) 75 A EAR Repetitive Avalanche Energy (Note 1) 13.1 mJ dv/dt Peak Diode Recovery dv/dt (Note 3) PD Power Dissipation (TC = 25°C) TJ, TSTG Operating and Storage Temperature Range TL Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds - Derate above 25°C 4.5 V/ns 131 W 1 W/°C -55 to +150 °C 300 °C Thermal Characteristics Symbol Parameter FDP75N08 Units 0.95 °C/W RθJC Thermal Resistance, Junction-to-Case RθCS Thermal Resistance, Case-to-Sink 0.5 °C/W RθJA Thermal Resistance, Junction-to-Ambient 62.5 °C/W ©2006 Fairchild Semiconductor Corporation FDP75N08 Rev. A 1 www.fairchildsemi.com FDP75N08 75V N-Channel MOSFET June 2006 Device Marking Device Package Reel Size Tape Width Quantity FDP75N08 FDP75N08 TO-220 -- -- 50 Electrical Characteristics Symbol TC = 25°C unless otherwise noted Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 µA 75 -- -- V ∆BVDSS/ ∆TJ Breakdown Voltage Temperature Coefficient ID = 250 µA, Referenced to 25°C -- 0.6 -- V/°C IDSS Zero Gate Voltage Drain Current VDS = 75 V, VGS = 0 V -- -- 1 µA VDS = 60 V, TC = 125°C -- -- 10 µA IGSSF Gate-Body Leakage Current, Forward VGS = 20 V, VDS = 0 V -- -- 100 nA IGSSR Gate-Body Leakage Current, Reverse VGS = -20 V, VDS = 0 V -- -- -100 nA VDS = VGS, ID = 250 µA 2.0 -- 4.0 V On Characteristics VGS(th) Gate Threshold Voltage RDS(on) Static Drain-Source On-Resistance VGS = 10 V, ID = 37.5 A gFS Forward Transconductance VDS = 40 V, ID =37.5 A (Note 4) -- 9.5 11 mΩ -- 15 -- S -- 2940 3820 pF Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance VDS = 25 V, VGS = 0 V, f = 1.0 MHz -- 680 890 pF -- 85 125 pF -- 7.2 25 ns -- 68 146 ns -- 77 164 ns -- 93 196 ns -- 64 84 nC -- 16 -- nC -- 24 -- nC Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time VDD = 37.5 V, ID = 75A, RG = 25 Ω (Note 4, 5) tf Turn-Off Fall Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd VDS = 60 V, ID = 75A, VGS = 10 V (Note 4, 5) Gate-Drain Charge Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current -- -- 75 A ISM Maximum Pulsed Drain-Source Diode Forward Current -- -- 300 A VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = 75 A -- -- 1.4 V trr Reverse Recovery Time -- 62 -- ns Qrr Reverse Recovery Charge VGS = 0 V, IS = 75 A, dIF / dt = 100 A/µs -- 150 -- nC (Note 4) NOTES: 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L = 138µH, IAS = 75A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C 3. ISD ≤ 75A, di/dt ≤200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C 4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2% 5. Essentially independent of operating temperature 2 FDP75N08 Rev. A www.fairchildsemi.com FDP75N08 75V N-Channel MOSFET Package Marking and Ordering Information FDP75N08 75V N-Channel MOSFET Typical Performance Characteristics Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics VGS 15.0V 9.0V 7.5V 7.0V 6.5v 6.0V 5.5V 5.0V Bottom : 4.5V 2 10 100 ID, Drain Current [A] ID, Drain Current [A] Top: 0 150 C 0 -55 C 0 25 C 10 * Note : 1. VDS=40V 2. 250µs Pulse Test * Note : 1. 250µs Pulse Test 0 2. TC=25 C 1 1 10 0 2 1 10 10 4 6 8 10 VGS, Gate-Source Voltage [V] VDS, Drain-Source Voltage [V] Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperatue RDS(ON) [Ω], Drain-Source On-Resistance 0.012 IDR, Reverse Drain Current [A] 0.011 VGS = 10V 0.010 0.009 VGS = 20V 0.008 o * Note : TJ = 25 C 2 10 0 150 C 0 25 C 1 10 * Note : 1. VGS=0V 2. 250µs Pulse Test 0 0.007 10 0 25 50 75 100 125 150 175 0.2 200 0.4 0.6 0.8 1.0 1.2 1.4 1.6 VDS, Source-Drain Violtage [V] ID, Drain Current [A] Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics 12 Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd Coss 5000 10 VGS, Gate-Source Voltage [V] 6000 Capacitances [pF] Ciss 4000 3000 2000 * Note : 1. VGS = 0 V 2. f = 1 MHz Crss 1000 0 -1 10 VDS = 60V 8 6 4 2 * Note : ID = 75A 0 10 0 0 1 10 20 30 40 50 60 70 80 10 QG, Total Gate Charge [nC] VDS, Drain-Source Voltage [V] 3 FDP75N08 Rev. A VDS = 37.5V www.fairchildsemi.com FDP75N08 75V N-Channel MOSFET Typical Performance Characteristics (Continued) Figure 7. Breakdown Voltage Variation vs. Temperature Figure 8. On-Resistance Variation vs. Temperature 3.0 RDS(ON), (Normalized) Drain-Source On-Resistance BVDSS, (Normalized) Drain-Source Breakdown Voltage 1.2 1.1 1.0 * Notes : 1. VGS = 0 V 2. ID = 250 µA 0.9 0.8 -100 -50 0 50 100 150 2.5 2.0 1.5 1.0 * Notes : 1. VGS = 10 V 2. ID = 37.5 A 0.5 0.0 -100 200 -50 0 o 3 70 100 µs 10 0 10 60 ID, Drain Current [A] ID, Drain Current [A] 1ms 1 10ms 100ms Operation in This Area is Limited by R DS(on) DC * Notes : o 1. TC = 25 C -1 50 40 30 20 o 2. TJ = 150 C 3. Single Pulse 10 200 80 2 10 150 Figure 10. Maximum Drain Current vs. Case Temperature 10 µs 10 100 TJ, Junction Temperature [ C] Figure 9. Maximum Safe Operating Area 10 50 o TJ, Junction Temperature [ C] 10 -2 10 0 10 1 10 0 25 2 50 75 100 125 150 o VDS, Drain-SourceVoltage[V] TC, Case Temperature [ C] Figure 11. Transient Thermal Response Curve 0 D = 0 .5 0 .2 10 ? 0 .1 -1 N o te s : 0 1 . Z ? J C( t ) = 1 . 1 C / W M a x . 2 . D u ty F a c to r , D = t1/t2 3 . T J M - T C = P D M * Z ? J C( t ) 0 .0 5 PDM 0 .0 2 0 .0 1 ? JC (t), Thermal Response 10 t1 t2 Z s in g le p u ls e 10 -2 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 t 1 , S q u a r e W a v e P u ls e D u r a t io n [ s e c ] 4 FDP75N08 Rev. A www.fairchildsemi.com FDP75N08 75V N-Channel MOSFET Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & Waveforms 5 FDP75N08 Rev. A www.fairchildsemi.com FDP75N08 75V N-Channel MOSFET Peak Diode Recovery dv/dt Test Circuit & Waveforms 6 FDP75N08 Rev. A www.fairchildsemi.com TO-220 4.50 ±0.20 2.80 ±0.10 (3.00) +0.10 1.30 –0.05 18.95MAX. (3.70) ø3.60 ±0.10 15.90 ±0.20 1.30 ±0.10 (8.70) (1.46) 9.20 ±0.20 (1.70) 9.90 ±0.20 (45° 1.52 ±0.10 10.08 ±0.30 (1.00) 13.08 ±0.20 ) 1.27 ±0.10 0.80 ±0.10 2.54TYP [2.54 ±0.20] +0.10 0.50 –0.05 2.40 ±0.20 2.54TYP [2.54 ±0.20] 10.00 ±0.20 Dimensions in Millimeters 7 FDP75N08 Rev. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I19 8 FDP75N08 Rev. A www.fairchildsemi.com FDP75N08 75V N-Channel MOSFET TRADEMARKS