MMDT5110W…MMDT511ZW PNP Silicon Epitaxial Planar Digital Transistor Collector (Output) Base (Input) R1 R2 Emitter (Common) Resistance Values Type R1 (KΩ) R2 (KΩ) Type R1 (KΩ) R2 (KΩ) MMDT5110W 47 - MMDT511DW 47 10 MMDT5111W 10 10 MMDT511EW 47 22 MMDT5112W 22 22 MMDT511FW 4.7 10 MMDT5113W 47 47 MMDT511HW 2.2 10 MMDT5114W 10 47 MMDT511LW 4.7 4.7 MMDT5115W 10 - MMDT511MW 2.2 47 MMDT5116W 4.7 - MMDT511NW 4.7 47 MMDT5117W 22 - MMDT511TW 22 47 MMDT5118W 0.51 5.1 MMDT511VW 2.2 2.2 MMDT5119W 1 10 MMDT511ZW 4.7 22 Symbol Value Unit Collector Base Voltage -VCBO 50 V Collector Emitter Voltage -VCEO 50 V Collector Current -IC 100 mA Total Power Dissipation Ptot 200 mW Junction Temperature Tj 150 O Storage Temperature Range TS - 55 to + 150 O Absolute Maximum Ratings (Ta = 25 OC) Parameter C C SEMTECH ELECTRONICS LTD. ® (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) Dated : 06/06/2007 MMDT5110W…MMDT511ZW Characteristics at Ta = 25 OC Parameter DC Current Gain at -VCE = 10 V, -IC = 5 mA Symbol Min. Typ. Max. Unit 20 30 35 60 60 80 80 160 - 200 400 460 - - - 100 nA - - 0.01 0.1 0.2 0.4 0.5 1 1.5 2 -V(BR)CBO 50 - - V -V(BR)CEO 50 - - V -VCEsat - - 0.3 V -VI(ON) - - 3 2.5 2.5 5 4 3 3 3 1.1 1.7 1.3 1.4 V MMDT5118/511L/511VW MMDT5119/511D/511F/511HW MMDT5111W MMDT5112/511EW MMDT511ZW MMDT5113/5114/511MW MMDT511N/511TW 1) MMDT5110/5115/5116/5117W Collector Base Cutoff Current at -VCB = 50 V Emitter Base Cutoff Current at -VEB = 6 V MMDT5110/5115/5116/5117W MMDT5113W hFE -ICBO MMDT5112/5114/511D/511E/511M/511N/511TW MMDT511ZW MMDT5111W MMDT511F/511HW MMDT5119W MMDT5118/511L/511VW Collector Base Breakdown Voltage at -IC = 10 µA Collector Emitter Breakdown Voltage at -IC = 2 mA Collector Emitter Saturation Voltage at -IC = 10 mA, -IB = 0.5 mA Input Voltage (ON) at -VO = 0.3 V, -IO = 20 mA at -VO = 0.3 V, -IO = 20 mA at -VO = 0.3 V, -IO = 2 mA at -VO = 0.3 V, -IO = 2 mA at -VO = 0.3 V, -IO = 2 mA at -VO = 0.3 V, -IO = 10 mA at -VO = 0.2 V, -IO = 5 mA at -VO = 0.3 V, -IO = 2 mA at -VO = 0.3 V, -IO = 5 mA at -VO = 0.2 V, -IO = 5 mA at -VO = 0.3 V, -IO = 5 mA at -VO = 0.3 V, -IO = 1 mA 1) MMDT511V/511L/5119/511H/5118W MMDT511FW MMDT511TW MMDT511DW MMDT511EW MMDT5111W MMDT5112W MMDT5113W MMDT511MW MMDT511ZW MMDT511NW MMDT5114W -IEBO hFE Rank Classification: Q: 160~260, R: 210~340, S: 290~460, No-rank: 160~460 SEMTECH ELECTRONICS LTD. ® (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) Dated : 06/06/2007 mA MMDT5110W…MMDT511ZW Characteristics at Ta = 25 OC Parameter Input Voltage (OFF) at -VCC = 5 V, -IO = 100 µA MMDT511V/511L/5111/5112/5113W MMDT5118/5119/511M/511Z/511NW MMDT511H/511F/5114W MMDT511TW MMDT511DW MMDT511EW Symbol Min. Typ. Max. Unit -VI(OFF) 0.5 0.5 0.3 0.4 1 0.8 - - V fT - 250 - MHz R1 - 30% 0.51 1 2.2 4.7 10 22 47 + 30% KΩ R1/R2 0.08 0.17 0.37 0.8 0.17 1.7 3.7 0.047 0.1 0.1 0.21 0.21 0.47 0.47 1 1 0.22 2.14 4.7 0.12 0.25 0.57 1.2 0.27 2.6 5.7 - Transition Frequency at -VCB = 10 V, -IE = 5 mA, f = 100 MHz Input Resistance MMDT5118W MMDT5119W MMDT511H/511M/511VW MMDT5116/511F/511L/511N/511ZW MMDT5111/5114/5115W MMDT5112/5117/511TW MMDT5110/5113/511D/511EW Resistance Ratio MMDT511MW MMDT511NW MMDT5118/5119W MMDT511ZW MMDT5114W MMDT511TW MMDT511FW MMDT511VW MMDT5111/5112/5113/511LW MMDT511HW MMDT511EW MMDT511DW SEMTECH ELECTRONICS LTD. ® (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) Dated : 06/06/2007