Anachip AF70N02DA N-channel enhancement mode power mosfet Datasheet

AF70N02
N-Channel Enhancement Mode Power MOSFET
„ Features
„ General Description
-Low Gate Charge
-Simple Drive Requirement
-Fast Switching
-Pb Free Plating Product
The TO-252 package is universally preferred for all
commercial-industrial surface mount applications and
suited for low voltage applications such as DC/DC
converters.
„ Product Summary
BVDSS (V)
25
RDS(ON) (mΩ)
9
ID (A)
66
„ Pin Descriptions
„ Pin Assignments
(Front View)
S
3
2
D
1
Pin Name
Description
S
G
D
Source
Gate
Drain
G
„ Ordering information
Feature
F :MOSFET
A X
70N02 X X
PN
Package
Packing
D: TO-252
Blank : Tube or Bulk
A : Tape & Reel
„ Block Diagram
D
S
G
This datasheet contains new product information. Anachip Corp. reserves the rights to modify the product specification without notice. No liability is assumed as a result of the use of
this product. No rights under any patent accompany the sale of the product.
Rev. 1.0 Aug 10, 2005
1/6
AF70N02
N-Channel Enhancement Mode Power MOSFET
„ Absolute Maximum Ratings
Symbol
VDS
VGS
Parameter
TC=25ºC
TC=100ºC
ID
Continuous Drain Current, VGS=10V
IDM
Pulsed Drain Current (Note 1)
Total Power Dissipation
Linear Derating Factor
Storage Temperature Range
Operating Junction Temperature Range
PD
TSTG
TJ
Rating
25
±20
66
42
210
66
0.53
-55 to 150
-55 to 150
Drain-Source Voltage
Gate-Source Voltage
TC=25ºC
Units
V
V
A
A
W
W/ºC
ºC
ºC
„ Thermal Data
Symbol
RθJC
RθJA
Parameter
Thermal Resistance Junction-Case
Thermal Resistance Junction- Ambient
Maximum
1.9
110
Max.
Max.
Units
ºC/W
ºC/W
„ Electrical Characteristics (TJ=25ºC unless otherwise noted)
Symbol
BVDSS
∆BVDSS/∆TJ
RDS(ON)
VGS(th)
gfs
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Parameter
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Static Drain-Source
On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage
Current(TJ=25ºC)
Drain-Source Leakage
Current(TJ=150ºC)
Gate Source Leakage
Total Gate Charge (Note 2)
Gate-Source Charge
Gate-Drain (“Miller”) Charge
Turn-On Delay Time (Note 2)
Rise Time
Turn-Off Delay Time
Fall-Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min.
25
Limits
Typ.
-
Max.
-
-
0.037
-
1
-
28
9
18
3
-
VDS=25V, VGS=0V
-
-
1
VDS=20V, VGS=0V
-
-
25
VGS=±20V
ID=33A
VDS=20V
VGS=5V
VDS=15V
ID=33A
RG=3.3Ω, VGS=10V
RD=0.45Ω
VGS=0V
VDS=25V,
f=1.0MHz
-
23
3
17
8.8
95
24
14
790
475
195
±100
-
Min.
-
Typ.
-
Max.
66
Unit
A
-
-
210
A
-
-
1.26
V
Test Conditions
VGS=0V, ID=250uA
Reference to 25ºC,
ID=1mA
VGS=10V, ID=33A
VGS=4.5V, ID=20A
VDS= VGS, ID=250uA
VDS=10V, ID=33A
Unit
V
V/ºC
mΩ
V
S
uA
nA
nC
nS
pF
„ Source-Drain Diode
Sym.
IS
ISM
VSD
Parameter
Test Conditions
Continuous Source Current (Body Diode) VD=VG=0V, VS=1.26V
Pulsed Source Current (Body Diode)
(Note 1)
Forward On Voltage (Note 2)
TJ=25ºC, IS=66A,
VGS=0V
Anachip Corp.
www.anachip.com.tw
Rev. 1.0
2/6
Aug 10, 2005
AF70N02
N-Channel Enhancement Mode Power MOSFET
„ Drain-Source Avalanche Ratings
Sym.
EAS
IAR
Parameter
Single Pulse Avalanche Energy (Note 2)
Avalanche Current
Test Conditions
VDD=25V, ID=35A,
L=100uH, VGS=10V
Min.
-
Typ.
-
Max.
61
35
Unit
mJ
A
Note 1: Pulse width limited by safe operating area.
Note 2: Pulse width < 300us, duty cycle < 2%.
„ Typical Performance Characteristics
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
Anachip Corp.
www.anachip.com.tw
Rev. 1.0
3/6
Aug 10, 2005
AF70N02
N-Channel Enhancement Mode Power MOSFET
„ Typical Performance Characteristics (Continued)
Fig 5. Maximum Drain Current v.s.
Case Temperature
Fig 6. Typical Power Dissipation
Fig 7. Maximum Safe Operating Area
Fig 8. Effective Transient Thermal Impedance
Fig 9. Gate Charge Characteristics
Fig 10. Typical Capacitance Characteristics
Anachip Corp.
www.anachip.com.tw
Rev. 1.0
4/6
Aug 10, 2005
AF70N02
N-Channel Enhancement Mode Power MOSFET
„ Typical Performance Characteristics (Continued)
Fig 11. Forward Characteristic of
Reverse Diode
Fig 12. Gate Threshold Voltage v.s.
Junction Temperature
Fig 13. Switching Time Circuit
Fig 14. Switching Time Waveform
Fig 15. Gate Charge Circuit
Fig 16. Gate Charge Waveform
Anachip Corp.
www.anachip.com.tw
Rev. 1.0
5/6
Aug 10, 2005
AF70N02
N-Channel Enhancement Mode Power MOSFET
„ Marking Information
TO-252
( Top View)
Logo
70N02
YYWWX
Part Number
YY : Year
WW: Nth week
X
: Internal code ( Optional)
„ Package Information
Package Type: TO-252
F1
E1
E3
E2
D
D1
F
B1
e
e
C
A3
A2
R: 0.127~0.381
(0.1mm)
1. All Dimensions Are in Millimeters.
2. Dimension Does Not Include Mold Protrusions.
Symbol
A2
A3
B1
D
D1
F
F1
E1
E2
E3
e
C
Dimensions In Millimeters
Min.
Nom.
Max.
1.80
2.30
2.80
0.40
0.50
0.60
0.40
0.70
1.00
6.00
6.50
7.00
4.80
5.35
5.90
2.20
2.63
3.05
0.50
0.85
1.20
5.10
5.70
6.30
0.50
1.10
1.70
3.50
4.00
4.50
2.30
0.35
0.50
0.65
Anachip Corp.
www.anachip.com.tw
Rev. 1.0
6/6
Aug 10, 2005
Similar pages