ON MUN2113T1 Bias resistor transistor Datasheet

MUN2111T1 Series
Preferred Devices
Bias Resistor Transistors
PNP Silicon Surface Mount Transistors
with Monolithic Bias Resistor Network
This new series of digital transistors is designed to replace a single
device and its external resistor bias network. The
Bias Resistor Transistor (BRT) contains a single transistor with a
monolithic bias network consisting of two resistors; a series base
resistor and a base−emitter resistor. The BRT eliminates these
individual components by integrating them into a single device. The
use of a BRT can reduce both system cost and board space. The device
is housed in the SC−59 package which is designed for low power
surface mount applications.
http://onsemi.com
PIN 3
COLLECTOR
(OUTPUT)
R1
PIN 2
BASE
(INPUT)
R2
Features
•
•
•
•
•
•
•
•
Simplifies Circuit Design
Reduces Board Space
Reduces Component Count
Moisture Sensitivity Level: 1
ESD Rating − Human Body Model: Class 1
− Machine Model: Class B
The SC−59 Package Can be Soldered Using Wave or Reflow
The Modified Gull−Winged Leads Absorb Thermal Stress During
Soldering Eliminating the Possibility of Damage to the Die
Pb−Free Packages are Available
MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Rating
Value
Unit
Collector − Base Voltage
VCBO
50
Vdc
Collector − Emitter Voltage
VCEO
50
Vdc
IC
100
mAdc
Total Device Dissipation
TA = 25°C
Derate above 25°C
Symbol
Max
Unit
PD
230 (Note 1)
338 (Note 2)
1.8 (Note 1)
2.7 (Note 2)
mW
°C/W
Thermal Resistance,
Junction−to−Ambient
RqJA
540 (Note 1)
370 (Note 2)
°C/W
Thermal Resistance,
Junction−to−Lead
RqJL
264 (Note 1)
287 (Note 2)
°C/W
Junction and Storage Temperature
Range
September, 2006 − Rev. 17
1
SC−59
CASE 318D
PLASTIC
6x M G
G
TJ, Tstg
6x
= Specific Device Code
M
= Date Code*
G
= Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation may vary depending
upon manufacturing location.
ORDERING INFORMATION
°C
−55 to +150
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR−4 @ Minimum Pad.
2. FR−4 @ 1.0 x 1.0 inch Pad.
© Semiconductor Components Industries, LLC, 2006
2
1
THERMAL CHARACTERISTICS
Characteristic
3
MARKING DIAGRAM
Symbol
Collector Current
PIN 1
EMITTER
(GROUND)
1
See detailed ordering and shipping information on page 2 of
this data sheet.
DEVICE MARKING INFORMATION
See device marking table on page 2 of this data sheet.
Preferred devices are recommended choices for future use
and best overall value.
Publication Order Number:
MUN2111T1/D
MUN2111T1 Series
DEVICE MARKING AND RESISTOR VALUES
Device
Package
Marking
R1 (K)
R2 (K)
SC−59
6A
10
10
MUN2111T1G
SC−59
(Pb−Free)
6A
10
10
MUN2111T3G
SC−59
(Pb−Free)
6A
10
10
SC−59
6B
22
22
SC−59
(Pb−Free)
6B
22
22
SC−59
6C
47
47
SC−59
(Pb−Free)
6C
47
47
SC−59
6D
10
47
SC−59
(Pb−Free)
6D
10
47
SC−59
6E
10
∞
SC−59
(Pb−Free)
6E
10
∞
SC−59
6F
4.7
∞
SC−59
(Pb−Free)
6F
4.7
∞
SC−59
6G
1.0
1.0
SC−59
(Pb−Free)
6G
1.0
1.0
SC−59
6H
2.2
2.2
SC−59
(Pb−Free)
6H
2.2
2.2
SC−59
6J
4.7
4.7
SC−59
(Pb−Free)
6J
4.7
4.7
SC−59
6K
4.7
47
SC−59
(Pb−Free)
6K
4.7
47
SC−59
6L
22
47
SC−59
(Pb−Free)
6L
22
47
SC−59
6N
100
100
SC−59
(Pb−Free)
6N
100
100
SC−59
6P
47
22
SC−59
(Pb−Free)
6P
47
22
SC−59
6T
47
∞
SC−59
(Pb−Free)
6T
47
∞
MUN2111T1
MUN2112T1
MUN2112T1G
MUN2113T1
MUN2113T1G
MUN2114T1
MUN2114T1G
MUN2115T1 (Note 3)
MUN2115T1G (Note 3)
MUN2116T1 (Note 3)
MUN2116T1G (Note 3)
MUN2130T1 (Note 3)
MUN2130T1G (Note 3)
MUN2131T1 (Note 3)
MUN2131T1G (Note 3)
MUN2132T1 (Note 3)
MUN2132T1G (Note 3)
MUN2133T1 (Note 3)
MUN2133T1G (Note 3)
MUN2134T1 (Note 3)
MUN2134T1G (Note 3)
MUN2136T1
MUN2136T1G
MUN2137T1
MUN2137T1G
MUN2140T1 (Note 3)
MUN2140T1G (Note 3)
Shipping †
3000 / Tape & Reel
10,000 / Tape & Reel
3000 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
3. New resistor combinations. Updated curves to follow in subsequent data sheets.
http://onsemi.com
2
MUN2111T1 Series
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Symbol
Min
Typ
Max
Unit
Collector−Base Cutoff Current (VCB = 50 V, IE = 0)
ICBO
−
−
100
nAdc
Collector−Emitter Cutoff Current (VCE = 50 V, IB = 0)
ICEO
−
−
500
nAdc
IEBO
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
0.5
0.2
0.1
0.2
0.9
1.9
4.3
2.3
1.5
0.18
0.13
0.05
0.13
0.20
mAdc
V(BR)CBO
50
−
−
Vdc
V(BR)CEO
50
−
−
Vdc
hFE
35
60
80
80
160
160
3.0
8.0
15
80
80
80
80
120
60
100
140
140
250
250
5.0
15
27
140
130
150
140
250
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
Characteristic
OFF CHARACTERISTICS
Emitter−Base Cutoff Current
(VEB = 6.0 V, IC = 0)
MUN2111T1
MUN2112T1
MUN2113T1
MUN2114T1
MUN2115T1
MUN2116T1
MUN2130T1
MUN2131T1
MUN2132T1
MUN2133T1
MUN2134T1
MUN2136T1
MUN2137T1
MUN2140T1
Collector−Base Breakdown Voltage (IC = 10 mA, IE = 0)
Collector−Emitter Breakdown Voltage (Note 4)
(IC = 2.0 mA, IB = 0)
ON CHARACTERISTICS (Note 4)
DC Current Gain
(VCE = 10 V, IC = 5.0 mA)
MUN2111T1
MUN2112T1
MUN2113T1
MUN2114T1
MUN2115T1
MUN2116T1
MUN2130T1
MUN2131T1
MUN2132T1
MUN2133T1
MUN2134T1
MUN2136T1
MUN2137T1
MUN2140T1
Collector−Emitter Saturation Voltage
(IC = 10 mA, IB = 0.3 mA)
VCE(sat)
MUN2111T1
MUN2112T1
MUN2113T1
MUN2114T1
MUN2115T1
MUN2130T1
MUN2133T1
MUN2136T1
MUN2137T1
MUN2131T1
MUN2116T1
MUN2132T1
MUN2134T1
MUN2140T1
(IC = 10 mA, IB = 5.0 mA)
(IC = 10 mA, IB = 1.0 mA)
Output Voltage (on)
(VCC = 5.0 V, VB = 2.5 V, RL = 1.0 kW)
Vdc
VOL
MUN2111T1
MUN2112T1
MUN2114T1
MUN2115T1
MUN2116T1
MUN2130T1
MUN2131T1
MUN2132T1
MUN2133T1
MUN2134T1
MUN2113T1
MUN2140T1
MUN2136T1
MUN2137T1
(VCC = 5.0 V, VB = 3.5 V, RL = 1.0 kW)
(VCC = 5.0 V, VB = 5.5 V, RL = 1.0 kW)
(VCC = 5.0 V, VB = 4.0 V, RL = 1.0 kW)
4. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0%.
http://onsemi.com
3
Vdc
MUN2111T1 Series
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
4.9
4.9
4.9
4.9
4.9
4.9
4.9
4.9
4.9
4.9
4.9
4.9
4.9
4.9
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
7.0
15.4
32.9
7.0
7.0
3.3
0.7
1.5
3.3
3.3
15.4
70
32.9
32.9
10
22
47
10
10
4.7
1.0
2.2
4.7
4.7
22
100
47
47
13
28.6
61.1
13
13
6.1
1.3
2.9
6.1
6.1
28.6
130
61.1
61.1
0.8
0.17
−
0.8
0.055
0.38
1.7
1.0
0.21
−
1.0
0.1
0.47
2.1
1.2
0.25
−
1.2
0.185
0.56
2.6
Unit
ON CHARACTERISTICS (Note 4)
Output Voltage (off)
(VCC = 5.0 V, VB = 0.5 V, RL = 1.0 kW)
VOH
MUN2111T1
MUN2112T1
MUN2113T1
MUN2114T1
MUN2133T1
MUN2134T1
MUN2136T1
MUN2137T1
MUN2130T1
MUN2115T1
MUN2116T1
MUN2131T1
MUN2132T1
MUN2140T1
(VCC = 5.0 V, VB = 0.050 V, RL = 1.0 kW)
(VCC = 5.0 V, VB = 0.25 V, RL = 1.0 kW)
Input Resistor
MUN2111T1
MUN2112T1
MUN2113T1
MUN2114T1
MUN2115T1
MUN2116T1
MUN2130T1
MUN2131T1
MUN2132T1
MUN2133T1
MUN2134T1
MUN2136T1
MUN2137T1
MUN2140T1
Resistor Ratio
MUN2111T1/MUN2112T1/MUN2113T1/
MUN2136T1
MUN2114T1
MUN2115T1/MUN2116T1/MUN2140T1
MUN2130T1/MUN2131T1/MUN2132T1
MUN2133T1
MUN2134T1
MUN2137T1
R1
Vdc
kW
R1/R2
4. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0%.
+12 V
PD, POWER DISSIPATION (mW)
350
300
250
Typical Application
for PNP BRTs
200
150
RqJA= 370°C/W
100
LOAD
50
0
−50
0
50
100
150
TA, AMBIENT TEMPERATURE (5°C)
Figure 1. Derating Curve
Figure 2. Inexpensive, Unregulated Current Source
http://onsemi.com
4
MUN2111T1 Series
1000
1
VCE = 10 V
IC/IB = 10
TA = −2°5C
hFE, DC CURRENT GAIN
VCE(sat), MAXIMUM COLLECTOR VOLTAGE
(VOLTS)
TYPICAL ELECTRICAL CHARACTERISTICS − MUN2111T1
25°C
75°C
0.1
0.01
0
20
40
60
IC, COLLECTOR CURRENT (mA)
TA = 75°C
100
−25°C
10
80
1
10
IC, COLLECTOR CURRENT (mA)
Figure 3. VCE(sat) vs. IC
100
IC, COLLECTOR CURRENT (mA)
1
0
10
1
0.1
VO = 5 V
0.01
0.001
50
TA = −25°C
0
Figure 5. Output Capacitance
1
6
7
8
2
3
4
5
Vin, INPUT VOLTAGE (VOLTS)
VO = 0.2 V
TA = −25°C
10
25°C
75°C
1
0.1
0
10
9
Figure 6. Output Current vs. Input Voltage
100
Vin, INPUT VOLTAGE (VOLTS)
Cob, CAPACITANCE (pF)
2
10
20
30
40
VR, REVERSE BIAS VOLTAGE (VOLTS)
25°C
75°C
f = 1 MHz
lE = 0 V
TA = 25°C
0
100
Figure 4. DC Current Gain
4
3
25°C
20
30
40
IC, COLLECTOR CURRENT (mA)
Figure 7. Input Voltage vs. Output Current
http://onsemi.com
5
50
10
MUN2111T1 Series
1000
10
VCE = 10 V
IC/IB = 10
TA = −25°C
hFE, DC CURRENT GAIN
VCE(sat), MAXIMUM COLLECTOR VOLTAGE
(VOLTS)
TYPICAL ELECTRICAL CHARACTERISTICS − MUN2112T1
25°C
1
75°C
0.1
0.01
TA = 75°C
100
10
0
20
40
60
IC, COLLECTOR CURRENT (mA)
1
80
10
Figure 9. DC Current Gain
100
IC, COLLECTOR CURRENT (mA)
4
f = 1 MHz
lE = 0 V
TA = 25°C
3
2
1
0
25°C
75°C
10
TA = −25°C
1
0.1
0.01
VO = 5 V
0.001
50
10
20
30
40
VR, REVERSE BIAS VOLTAGE (VOLTS)
1
0
Figure 10. Output Capacitance
2
3
4
5
6
7
8
Vin, INPUT VOLTAGE (VOLTS)
VO = 0.2 V
TA = −25°C
25°C
10
75°C
1
0.1
0
9
Figure 11. Output Current vs. Input Voltage
100
Vin, INPUT VOLTAGE (VOLTS)
Cob, CAPACITANCE (pF)
10
0
IC, COLLECTOR CURRENT (mA)
Figure 8. VCE(sat) vs. IC
0
25°C
−25°C
10
20
30
40
IC, COLLECTOR CURRENT (mA)
Figure 12. Input Voltage vs. Output Current
http://onsemi.com
6
50
10
MUN2111T1 Series
1
1000
IC/IB = 10
TA = −25°C
25°C
75°C
0.1
0.01
hFE, DC CURRENT GAIN
VCE(sat), MAXIMUM COLLECTOR VOLTAGE
(VOLTS)
TYPICAL ELECTRICAL CHARACTERISTICS − MUN2113T1
0
10
20
30
IC, COLLECTOR CURRENT (mA)
TA = 75°C
25°C
10
40
−25°C
100
1
10
IC, COLLECTOR CURRENT (mA)
Figure 14. DC Current Gain
Figure 13. VCE(sat) vs. IC
IC, COLLECTOR CURRENT (mA)
100
f = 1 MHz
lE = 0 V
TA = 25°C
0.6
0.4
0.2
0
0
10
20
30
40
VR, REVERSE BIAS VOLTAGE (VOLTS)
−25°C
0.1
0.01
VO = 5 V
1
2
3
4
5
6
7
8
Vin, INPUT VOLTAGE (VOLTS)
VO = 0.2 V
TA = −25°C
25°C
10
75°C
1
0
9
Figure 16. Output Current vs. Input Voltage
100
0.1
25°C
1
0.001
0
50
TA = 75°C
10
Figure 15. Output Capacitance
Vin, INPUT VOLTAGE (VOLTS)
Cob, CAPACITANCE (pF)
1
0.8
100
10
20
30
40
IC, COLLECTOR CURRENT (mA)
Figure 17. Input Voltage vs. Output Current
http://onsemi.com
7
50
10
MUN2111T1 Series
180
1
IC/IB = 10
25°C
140
25°C
0.1
−25°C
120
75°C
100
0.01
80
60
40
20
0.00
0
1
20
40
60
IC, COLLECTOR CURRENT (mA)
0
80
1
2
4.5
6 8 10 15 20 40 50 60 70 80 90 100
IC, COLLECTOR CURRENT (mA)
100
3.5
IC, COLLECTOR CURRENT (mA)
f = 1 MHz
lE = 0 V
TA = 25°C
4
3
2.5
2
1.5
1
0.5
0
2
4
6
8
10 15
TA = 75°C
10
VO = 5 V
1
20 25 30 35 40 45 50
25°C
−25°C
0
2
4
Figure 20. Output Capacitance
TA = −25°C
25°C
75°C
1
VO = 0.2 V
0
8
Figure 21. Output Current vs. Input Voltage
10
0.1
6
Vin, INPUT VOLTAGE (VOLTS)
VR, REVERSE BIAS VOLTAGE (VOLTS)
Vin, INPUT VOLTAGE (VOLTS)
0
4
Figure 19. DC Current Gain
Figure 18. VCE(sat) vs. IC
Cob, CAPACITANCE (pF)
TA = 75°C
VCE = 10 V
160
TA = −25°C
hFE, DC CURRENT GAIN
VCE(sat), MAXIMUM COLLECTOR VOLTAGE
(VOLTS)
TYPICAL ELECTRICAL CHARACTERISTICS − MUN2114T1
10
20
30
40
IC, COLLECTOR CURRENT (mA)
Figure 22. Input Voltage vs. Output Current
http://onsemi.com
8
50
10
MUN2111T1 Series
1
1000
IC/IB = 10
IC/IB =10
hFE, DC CURRENT GAIN
VCE(sat), MAXIMUM COLLECTOR VOLTAGE (V)
TYPICAL ELECTRICAL CHARACTERISTICS − MUN2131T1
25°C
75°C
0.1
−25°C
0.01
100
25°C
75°C
10
−25°C
1
0
5
10
15
20
25
30
35
1
10
IC, COLLECTOR CURRENT (mA)
IC, COLLECTOR CURRENT (mA)
Figure 23. VCE(sat) vs. IC
Figure 24. DC Current Gain
12
10
IC, COLLECTOR CURRENT (mA)
100
f = 1 MHz
IE = 0 A
TA = 25°C
8
6
4
2
0
75°C
−25°C
10
1
TA = 25°C
VO = 5 V
0.01
0.01
0
5
10
15
20
25
30
35
40
45
50 55
0
1
2
3
4
5
6
7
VR, REVERSE BIAS VOLTAGE (V)
Vin, INPUT VOLTAGE (V)
Figure 25. Output Capacitance
Figure 26. Output Current vs. Input Voltage
10
Vin, INPUT VOLTAGE (VOLTS)
Cob, CAPACITANCE (pF)
100
TA = −25°C
75°C
1
25°C
VO = 0.2 V
0.1
0
5
10
15
20
IC, COLLECTOR CURRENT (mA)
Figure 27. Input Voltage vs. Output Current
http://onsemi.com
9
25
8
MUN2111T1 Series
1
1000
VCE = 10 V
IC/IB = 10
hFE, DC CURRENT GAIN
VCE(sat), COLLECTOR VOLTAGE (VOLTS)
TYPICAL ELECTRICAL CHARACTERISTICS — MUN2133T1
75°C
0.1
−25°C
25°C
0.01
0.001
30
20
40
10
IC, COLLECTOR CURRENT (mA)
0
75°C
100
1
10
IC, COLLECTOR CURRENT (mA)
Figure 28. VCE(sat) versus IC
100
Figure 29. DC Current Gain
8
100
6
IC, COLLECTOR CURRENT (mA)
f = 1 MHz
lE = 0 V
TA = 25°C
7
5
4
3
2
1
0
75°C
10
25°C
1
0.1
TA = −25°C
0.01
VO = 5 V
0.001
0
5
10 15 20 25 30 35 40 45
VR, REVERSE BIAS VOLTAGE (VOLTS)
50
0
Figure 30. Output Capacitance
1
2
3
4
5
6
7
8
Vin, INPUT VOLTAGE (VOLTS)
TA = −25°C
1
75°C
25°C
VO = 0.2 V
0.1
0
9
10
Figure 31. Output Current versus Input Voltage
10
Vin, INPUT VOLTAGE (VOLTS)
Cob, CAPACITANCE (pF)
25°C
10
1
50
TA = −25°C
10
20
30
40
IC, COLLECTOR CURRENT (mA)
Figure 32. Input Voltage versus Output Current
http://onsemi.com
10
50
MUN2111T1 Series
TYPICAL ELECTRICAL CHARACTERISTICS — MUN2136T1
1000
75°C
hFE, DC CURRENT GAIN
VCE(sat), MAXIMUM COLLECTOR
VOLTAGE (VOLTS)
1
0.1
75°C
25°C
−25°C
TA = −25°C
100
25°C
10
VCE = 10 V
IC/IB = 10
0.01
0
1
2
3
4
5
IC, COLLECTOR CURRENT (mA)
6
1
7
1
10
IC, COLLECTOR CURRENT (mA)
Figure 33. Maximum Collector Voltage vs.
Collector Current
Figure 34. DC Current Gain
100
IC, COLLECTOR CURRENT (mA)
1.0
f = 1 MHz
IE = 0 V
TA = 25°C
0.8
0.6
0.4
0.2
25°C
10
20
30
40
50
VR, REVERSE BIAS VOLTAGE (VOLTS)
60
TA = −25°C
1
VO = 5 V
0
1
2
3
4
TA = −25°C
10
VO = 0.2 V
75°C
0
2
6
7
8
9
Figure 36. Output Current vs. Input Voltage
100
1
5
Vin, INPUT VOLTAGE (VOLTS)
Figure 35. Output Capacitance
25°C
75°C
10
0.1
0
Vin, INPUT VOLTAGE (VOLTS)
Cob, CAPACITANCE (pF)
1.2
0
100
4
6
8
10 12
14
16
IC, COLLECTOR CURRENT (mA)
18
Figure 37. Input Voltage vs. Output Current
http://onsemi.com
11
20
10
MUN2111T1 Series
TYPICAL ELECTRICAL CHARACTERISTICS — MUN2137T1
1000
hFE, DC CURRENT GAIN
VCE(sat), MAXIMUM COLLECTOR
VOLTAGE (VOLTS)
1
TA = −25°C
75°C
0.1
25°C
75°C
TA = −25°C
100
25°C
VCE = 10 V
IC/IB = 10
0.01
0
5
10 15
20 25 30 35 40
IC, COLLECTOR CURRENT (mA)
45
10
50
1
10
IC, COLLECTOR CURRENT (mA)
Figure 38. Maximum Collector Voltage vs.
Collector Current
Figure 39. DC Current Gain
100
1.2
IC, COLLECTOR CURRENT (mA)
f = 1 MHz
IE = 0 V
TA = 25°C
1.0
0.8
0.6
0.4
0.2
75°C
10
20
30
40
50
VR, REVERSE BIAS VOLTAGE (VOLTS)
60
TA = −25°C
10
25°C
1
0.1
0.01
0.001
0
VO = 5 V
0
1
2
3
4
VO = 0.2 V
1
TA = −25°C
75°C
25°C
0
6
7
8
9
10
Figure 41. Output Current vs. Input Voltage
100
10
5
Vin, INPUT VOLTAGE (VOLTS)
Figure 40. Output Capacitance
Vin, INPUT VOLTAGE (VOLTS)
Cob, CAPACITANCE (pF)
1.4
0
100
5
10
15
20
IC, COLLECTOR CURRENT (mA)
Figure 42. Input Voltage vs. Output Current
http://onsemi.com
12
25
11
MUN2111T1 Series
PACKAGE DIMENSIONS
SC−59
CASE 318D−04
ISSUE G
D
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
3
HE
2
E
1
DIM
A
A1
b
c
D
E
e
L
HE
b
e
C
A
MILLIMETERS
NOM
MAX
1.15
1.30
0.06
0.10
0.43
0.50
0.14
0.18
2.90
3.10
1.50
1.70
1.90
2.10
0.40
0.60
2.80
3.00
MIN
0.039
0.001
0.014
0.003
0.106
0.051
0.067
0.008
0.099
INCHES
NOM
0.045
0.002
0.017
0.005
0.114
0.059
0.075
0.016
0.110
MAX
0.051
0.004
0.020
0.007
0.122
0.067
0.083
0.024
0.118
STYLE 1:
PIN 1. EMITTER
2. BASE
3. COLLECTOR
L
A1
MIN
1.00
0.01
0.35
0.09
2.70
1.30
1.70
0.20
2.50
SOLDERING FOOTPRINT*
0.95
0.037
0.95
0.037
2.4
0.094
1.0
0.039
0.8
0.031
SCALE 10:1
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
Literature Distribution Center for ON Semiconductor
P.O. Box 5163, Denver, Colorado 80217 USA
Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada
Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada
Email: [email protected]
N. American Technical Support: 800−282−9855 Toll Free
USA/Canada
Europe, Middle East and Africa Technical Support:
Phone: 421 33 790 2910
Japan Customer Focus Center
Phone: 81−3−5773−3850
http://onsemi.com
13
ON Semiconductor Website: www.onsemi.com
Order Literature: http://www.onsemi.com/orderlit
For additional information, please contact your local
Sales Representative
MUN2111T1/D