Transistors SMD Type NPN Transistors MJD13001 SOT-23 Unit: mm +0.1 2.9 -0.1 +0.1 0.4 -0.1 ■ Features 1 0.55 +0.1 1.3 -0.1 +0.1 2.4 -0.1 ● Power switching applications 0.4 3 2 +0.1 0.95 -0.1 +0.1 1.9 -0.1 +0.1 0.97 -0.1 +0.05 0.1 -0.01 1.Base 0-0.1 ■ Absolute Maximum Ratings Ta = 25℃ Symbol Rating Collector - Base Voltage Parameter VCBO 700 Collector - Emitter Voltage VCEO 400 Emitter - Base Voltage V VEBO 8 IC 200 mA Collector Power Dissipation PC 300 mW Storage Temperature Range TJ 150 Tstg -55 to 150 3.collector Unit Collector Current - Continuous Junction Temperature +0.1 0.38 -0.1 2.Emitter ℃ ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test Conditions Min Collector- base breakdown voltage VCBO Ic= 1 mA， IE= 0 700 Collector- emitter breakdown voltage VCEO Ic= 1 mA， IB= 0 400 Emitter - base breakdown voltage VEBO IE= 100μA， IC= 0 Typ Max V 8 Collector-base cut-off current ICBO VCB= 600 V , IE= 0 100 Collector- emitter cut-off current ICEO VCE= 400 V , IE= 0 100 Emitter cut-off current IEBO VEB= 7V , IC=0 100 Collector-emitter saturation voltage VCE(sat) IC=50 mA, IB=10mA 0.4 Base - emitter saturation voltage VBE(sat) IC=50 mA, IB=10mA 1.1 hFE(1) VCE= 20V, IC= 20mA hFE(2) VCE= 10V, IC= 0.25mA 5 hFE(3) VCE= 10V, IC= 500mA 1 DC current gain Rail time tr Storage time ts Transition frequency fT Unit 10 0.9 VCE= 20V, IC= 20mA,f=1MHz V 40 0.9 IC= 100mA uA 2.4 8 uS MHz ■ Classification of hfe(1) Type MJD13001-A MJD13001-B MJD13001-C MJD13001-D MJD13001-E MJD13001-F Range 10-15 15-20 20-25 25-30 30-35 35-40 Marking 3001A 3001B 3001C 3001D 3001E 3001F www.kexin.com.cn 1 Transistors SMD Type NPN Transistors MJD13001 ■ Typical Characterisitics Static Characteristic COLLECTOR CURRENT IC (mA) 1.5mA 1.35mA 30 hFE 40 —— IC VCE=20V COMMON EMITTER Ta=25℃ DC CURRENT GAIN hFE 40 1.2mA 1.05mA 900uA 20 750uA 600uA 450uA 10 30 Ta=100℃ Ta=25℃ 20 10 300uA IB=150uA 0 0 10 20 30 40 COLLECTOR-EMITTER VOLTAGE VCEsat —— 0 0.1 50 1 0.3 (V) 3 10 COLLECTOR CURRENT IC VBEsat 1.2 300 —— Ta=100℃ 100 Ta=25℃ 30 (mA) IC β=5 0.8 Ta=25℃ Ta=100℃ 0.6 0.4 0.2 10 0.1 β=5 0.3 3 1 30 10 COLLECTOR CURRENT IC 200 —— IC 100 0.0 0.1 200 0.3 3 1 (mA) 30 10 COLLECTOR CURRENT VBE Cob/ Cib 300 VCE=20V —— IC Ta=25℃ 10 3 VCB/ VEB Ta=25℃ Cib 30 10 Cob 3 1 0.4 0.6 0.8 BASE-EMMITER VOLTAGE PC 0.5 COLLECTOR POWER DISSIPATION PC (W) CAPACITANCE C (pF) COLLCETOR CURRENT IC (mA) 100 —— VBE 1.0 Ta 0.3 0.2 0.1 0 25 50 75 AMBIENT TEMPERATURE www.kexin.com.cn 100 Ta 125 (℃) 1 0.1 0.3 1 REVERSE VOLTAGE (V) 0.4 0.0 200 f=1MHz IE=0/IC=0 Ta=100℃ 30 100 (mA) 100 2 200 100 30 IC 1.0 BASE-EMITTER SATURATION VOLTAGE VBEsat (V) COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (mV) 500 VCE 150 10 3 V (V) 20