isc Product Specification INCHANGE Semiconductor isc Triacs BTA26-600A FEATURES ·With TO-3P insulated package ·Suitables for general purpose where high surge current capability is required. Application such as phase control and static switching on inductive or resistive load. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER MIN UNIT VDRM Repetitive peak off-state voltage 600 V VRRM Repetitive peak reverse voltage 600 V IT(RMS) RMS on-state current (full sine wave)Tj=90℃ 25 A ITSM Non-repetitive peak on-state current tp=8.3ms 260 A Operating junction temperature 125 ℃ -45~150 ℃ 1 W Tj Tstg Storage temperature PG(AV) Average gate power dissipation(Tj=125℃) Rth(j-c) Thermal resistance, junction to case 1.5 ℃/W Rth(j-a) Thermal resistance, junction to ambient 50 ℃/W ELECTRICAL CHARACTERISTICS (TC=25℃ unless otherwise specified) SYMBOL PARAMETER CONDITIONS IRRM Repetitive peak reverse current IDRM Repetitive peak off-state current VR=VRRM, VR=VRRM, Tj=125℃ VD=VDRM, VD=VDRM, Tj=125℃ VD=12V; RL= 33Ω Gate trigger current mA mA 100 Ⅱ IH 0.01 6.0 0.01 6.0 UNIT 100 Ⅰ IGT MAX mA Ⅲ 100 Ⅳ 150 Holding current IGT= 0.5A, Gate Open 100 mA VGT Gate trigger voltage all quadrant VD=12V; RL= 33Ω 1.5 V VTM On-state voltage IT= 35A; tp= 380μs 1.7 V isc website：www.iscsemi.cn