BAS285 Vishay Semiconductors Small Signal Schottky Diode Features • Integrated protection ring against static discharge e2 • Very low forward voltage • Lead (Pb)-free component • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC 9612009 Applications • Applications where a very low forward voltage is required Mechanical Data Case: QuadroMELF Glass case SOD80 Weight: approx. 34 mg Cathode Band Color: Black Packaging Codes/Options: GS18 / 10 k per 13" reel (8 mm tape), 10 k/box GS08 / 2.5 k per 7" reel (8 mm tape), 12.5 k/box Parts Table Part Type differentiation VR = 30 V BAS285 Ordering code Remarks BAS285-GS18 or BAS285-GS08 Tape and Reel Absolute Maximum Ratings Tamb = 25 °C, unless otherwise specified Parameter Test condition Reverse voltage Symbol Value VR 30 Unit V Peak forward surge current tp = 10 ms IFSM 5 A Repetitive peak forward current tp ≤ 1 s IFRM 300 mA IF 200 mA IFAV 200 mA Symbol Value Unit RthJA 320 K/W Tj 125 °C Tstg - 65 to + 150 °C Forward current Average forward current Thermal Characteristics Tamb = 25 °C, unless otherwise specified Parameter Junction to ambient air Junction temperature Storage temperature range Document Number 85501 Rev. 1.7, 17-Mar-06 Test condition on PC board 50 mm x 50 mm x 1.6 mm www.vishay.com 1 BAS285 Vishay Semiconductors Electrical Characteristics Tamb = 25 °C, unless otherwise specified Parameter Test condition Forward voltage Max Unit IF = 0.1 mA Symbol VF Min Typ. 240 mV IF = 1 mA VF 320 mV IF = 10 mA VF 400 mV IF = 30 mA VF 500 mV IF = 100 mA VF 800 mV Reverse current VR = 25 V, tp = 300 µs IR 2.3 µA Diode capacitance VR = 1 V, f = 1 MHz CD 10 pF Typical Characteristics 200 1000 VR = 30 V 180 Tj = 150 °C 160 140 IF - Forward Current (A) PR - Reverse Power Dissipation (mW) Tamb = 25 °C, unless otherwise specified RthJA = 540 kW 120 PR - Limit at 100 % VR 100 80 PR - Limit at 80 % VR 60 40 100 Tj = 25 °C 10 1 20 0.1 0 25 50 75 100 125 Tj - Junction Temperature (°C) 15822 0 150 Figure 1. Max. Reverse Power Dissipation vs. Junction Temperature 1.0 1.5 Figure 3. Forward Current vs. Forward Voltage 1000 10 CD - Diode Capacitance (pF) IR - Reverse Current (µA) 0.5 VF - Forward Voltage (V) 15824 VR = VRRM 100 10 f = 1 MHz 9 8 7 6 5 4 3 2 1 0 1 25 15823 50 75 100 125 Tj - Junction Temperature (°C) Figure 2. Reverse Current vs. Junction Temperature www.vishay.com 2 0.1 150 15825 1 10 100 VR - Reverse Voltage (V) Figure 4. Diode Capacitance vs. Reverse Voltage Document Number 85501 Rev. 1.7, 17-Mar-06 BAS285 Vishay Semiconductors Package Dimensions in mm (Inches) 12071 Document Number 85501 Rev. 1.7, 17-Mar-06 www.vishay.com 3 BAS285 Vishay Semiconductors Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany www.vishay.com 4 Document Number 85501 Rev. 1.7, 17-Mar-06 Legal Disclaimer Notice Vishay Notice Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Vishay for any damages resulting from such improper use or sale. Document Number: 91000 Revision: 08-Apr-05 www.vishay.com 1