OptoDiode OD-666 High-power gaalas irled illuminator Datasheet

HIGH-POWER GaAlAs IRLED ILLUMINATOR
.053
.067
EPOXY
LED CHIPS .140 R
(REF. ONLY)
.084
.096
FEATURES
.142
.152
.342 R
.030
.426
.432
.325
1.225
1.255
.955
.965
.480
.350
MIN
CATHODE
.170
MAX
DIMPLE
OD-666
ANODE
•
•
•
•
•
•
High reliability LPE GaAlAs IRLEDs
Ultra high power output
880nm peak emission
Six chips connected in series
Very wide angle of emission
Electrically isolated case
All surfaces are gold plated. Dimensions are nominal
values in inches unless otherwise specified.
.680
.700
RoHS
ELECTRO-OPTICAL CHARACTERISTICS AT 25°C
PARAMETERS
Total Power Output, Po
Peak Emission Wavelength, LP
TEST CONDITIONS
IF = 300mA
IF = 6A
Spectral Bandwidth at 50%, $L
IF = 50mA
Forward Voltage, VF
IF = 300mA
Half Intensity Beam Angle, Q
Reverse Breakdown Voltage, VR
Capacitance, C
Rise Time
IR = 10MA
VR = 0V
MIN
300
TYP
330
5000
MAX
mW
880
nm
80
120
9
30
5
15
2
Fall Time
UNITS
nm
10
Deg
Volts
Volts
pF
Msec
2
Msec
ABSOLUTE MAXIMUM RATINGS AT 25°C CASE
Power Dissipation1
4W
Continuous Forward Current
400mA
Peak Forward Current (10Ms, 400Hz)2
6A
Reverse Voltage
5V
Lead Soldering Temperature (1/16" from case for 10sec)
260°C
1Derate per Thermal Derating Curve above 25°C
2Derate linearly above 25°C
THERMAL PARAMETERS
Storage and Operating Temperature Range
-55°C to 100°C
Thermal Resistance, RTHJA1
Thermal Resistance, RTHJA2
60°C/W Typical
Maximum Junction Temperature
100°C
16°C/W Typical
1Heat transfer minimized by measuring in still air with minimum heat conducting through leads
2Air circulating at a rapid rate to keep case temperature at 25°C
750 Mitchell Road, Newbury Park, California 91320
Phone: (805) 499-0335, Fax: (805) 499-8108
Email: [email protected], Website: www.optodiode.com
HIGH-POWER GaAlAs IRLED ILLUMINATOR
4,500
THERMAL DERATING CURVE
10
PEAK FORWARD CURRENT, Ip (amps)
POWER DISSIPATION (mW)
3,500
3,000
INFINITE
HEAT SINK
2,500
2,000
1,500
NO
HEAT SINK
1,000
500
0
100
25
50
75
AMBIENT TEMPERATURE (°C)
DEGRADATION CURVE
RELATIVE POWER OUTPUT (%)
RELATIVE POWER OUTPUT (%)
IF = 400mA
TCASE = 48°C
70
UNITS PRE CONDITIONED AT
IF = 110mA, TCASE = 100°C, t = 24 HOURS
60
7
101
102
103
STRESS TIME, (hrs)
104
FORWARD I-V CHARACTERISTICS
t
D=
Ip
t
T
T
0.1
1
DUTY CYCLE, D (%)
10
100
RADIATION PATTERN
80
60
40
20
–60
–40
–20
0
20
40
BEAM ANGLE, Q(deg)
60
80
100
POWER OUTPUT vs TEMPERATURE
1.4
RELATIVE POWER OUTPUT
4
3
2
1
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
8
10
12
14
16
FORWARD VOLTAGE, VF (volts)
18
SPECTRAL OUTPUT
10,000
80
–25
0
25
50
AMBIENT TEMPERATURE (°C)
75
100
POWER OUTPUT vs FORWARD CURRENT
1000
60
40
20
0
750
0.5
–50
20
POWER OUTPUT, Po (mW)
FORWARD CURRENT, IF (amps)
0.1
1.5
5
100
t = 100Ms
1
0
–100 –80
105
6
0
t = 10Ms
t = 50Ms
100
IF = 200mA
TCASE = 33°C
80
MAXIMUM PEAK PULSE CURRENT
0.01
0.01
100
90
50
RELATIVE POWER OUTPUT (%)
TYPICAL CHARACTERISTICS
MAXIMUM RATINGS
4,000
OD-666
800
850
900
WAVELENGTH, L(nm)
950
1,000
100
10
10
DC
PULSE
10Ms, 100Hz
100
1,000
FORWARD CURRENT, IF (mA)
10,000
750 Mitchell Road, Newbury Park, California 91320
Phone: (805) 499-0335, Fax: (805) 499-8108
Email: [email protected], Website: www.optodiode.com
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