HIGH-POWER GaAlAs IRLED ILLUMINATOR .053 .067 EPOXY LED CHIPS .140 R (REF. ONLY) .084 .096 FEATURES .142 .152 .342 R .030 .426 .432 .325 1.225 1.255 .955 .965 .480 .350 MIN CATHODE .170 MAX DIMPLE OD-666 ANODE • • • • • • High reliability LPE GaAlAs IRLEDs Ultra high power output 880nm peak emission Six chips connected in series Very wide angle of emission Electrically isolated case All surfaces are gold plated. Dimensions are nominal values in inches unless otherwise specified. .680 .700 RoHS ELECTRO-OPTICAL CHARACTERISTICS AT 25°C PARAMETERS Total Power Output, Po Peak Emission Wavelength, LP TEST CONDITIONS IF = 300mA IF = 6A Spectral Bandwidth at 50%, $L IF = 50mA Forward Voltage, VF IF = 300mA Half Intensity Beam Angle, Q Reverse Breakdown Voltage, VR Capacitance, C Rise Time IR = 10MA VR = 0V MIN 300 TYP 330 5000 MAX mW 880 nm 80 120 9 30 5 15 2 Fall Time UNITS nm 10 Deg Volts Volts pF Msec 2 Msec ABSOLUTE MAXIMUM RATINGS AT 25°C CASE Power Dissipation1 4W Continuous Forward Current 400mA Peak Forward Current (10Ms, 400Hz)2 6A Reverse Voltage 5V Lead Soldering Temperature (1/16" from case for 10sec) 260°C 1Derate per Thermal Derating Curve above 25°C 2Derate linearly above 25°C THERMAL PARAMETERS Storage and Operating Temperature Range -55°C to 100°C Thermal Resistance, RTHJA1 Thermal Resistance, RTHJA2 60°C/W Typical Maximum Junction Temperature 100°C 16°C/W Typical 1Heat transfer minimized by measuring in still air with minimum heat conducting through leads 2Air circulating at a rapid rate to keep case temperature at 25°C 750 Mitchell Road, Newbury Park, California 91320 Phone: (805) 499-0335, Fax: (805) 499-8108 Email: [email protected], Website: www.optodiode.com HIGH-POWER GaAlAs IRLED ILLUMINATOR 4,500 THERMAL DERATING CURVE 10 PEAK FORWARD CURRENT, Ip (amps) POWER DISSIPATION (mW) 3,500 3,000 INFINITE HEAT SINK 2,500 2,000 1,500 NO HEAT SINK 1,000 500 0 100 25 50 75 AMBIENT TEMPERATURE (°C) DEGRADATION CURVE RELATIVE POWER OUTPUT (%) RELATIVE POWER OUTPUT (%) IF = 400mA TCASE = 48°C 70 UNITS PRE CONDITIONED AT IF = 110mA, TCASE = 100°C, t = 24 HOURS 60 7 101 102 103 STRESS TIME, (hrs) 104 FORWARD I-V CHARACTERISTICS t D= Ip t T T 0.1 1 DUTY CYCLE, D (%) 10 100 RADIATION PATTERN 80 60 40 20 –60 –40 –20 0 20 40 BEAM ANGLE, Q(deg) 60 80 100 POWER OUTPUT vs TEMPERATURE 1.4 RELATIVE POWER OUTPUT 4 3 2 1 1.3 1.2 1.1 1.0 0.9 0.8 0.7 0.6 8 10 12 14 16 FORWARD VOLTAGE, VF (volts) 18 SPECTRAL OUTPUT 10,000 80 –25 0 25 50 AMBIENT TEMPERATURE (°C) 75 100 POWER OUTPUT vs FORWARD CURRENT 1000 60 40 20 0 750 0.5 –50 20 POWER OUTPUT, Po (mW) FORWARD CURRENT, IF (amps) 0.1 1.5 5 100 t = 100Ms 1 0 –100 –80 105 6 0 t = 10Ms t = 50Ms 100 IF = 200mA TCASE = 33°C 80 MAXIMUM PEAK PULSE CURRENT 0.01 0.01 100 90 50 RELATIVE POWER OUTPUT (%) TYPICAL CHARACTERISTICS MAXIMUM RATINGS 4,000 OD-666 800 850 900 WAVELENGTH, L(nm) 950 1,000 100 10 10 DC PULSE 10Ms, 100Hz 100 1,000 FORWARD CURRENT, IF (mA) 10,000 750 Mitchell Road, Newbury Park, California 91320 Phone: (805) 499-0335, Fax: (805) 499-8108 Email: [email protected], Website: www.optodiode.com