MAC12SM, MAC12SN Preferred Device Sensitive Gate Triacs Silicon Bidirectional Thyristors Designed for industrial and consumer applications for full wave control of AC loads such as appliance controls, heater controls, motor controls, and other power switching applications. http://onsemi.com Features TRIACS 12 AMPERES RMS 600 thru 800 VOLTS • Sensitive Gate Allows Triggering by Microcontrollers and other • • • • • • • • • • Logic Circuits Blocking Voltage to 800 Volts On-State Current Rating of 12 Amperes RMS at 70°C High Surge Current Capability − 90 Amperes Rugged, Economical TO−220AB Package Glass Passivated Junctions for Reliability and Uniformity Maximum Values of IGT, VGT and IH Specified for Ease of Design High Commutating di/dt − 8.0 A/ms Minimum at 110°C Immunity to dV/dt − 15 V/msec Minimum at 110°C Operational in Three Quadrants: Q1, Q2, and Q3 Pb−Free Packages are Available* MT2 MT1 G MARKING DIAGRAM MAC12SxG AYWW MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Symbol Value Peak Repetitive Off−State Voltage (Note 1) (TJ = −40 to 110°C, Sine Wave, 50 to 60 Hz, Gate Open) MAC12SM MAC12SN VDRM, VRRM On-State RMS Current (All Conduction Angles; TC = 70°C) IT(RMS) 12 A Peak Non-Repetitive Surge Current (One Full Cycle Sine Wave, 60 Hz, TJ = 110°C) ITSM 90 A I2t 33 A2sec PGM 16 W Circuit Fusing Consideration (t = 8.33 ms) Peak Gate Power (Pulse Width = 1.0 msec, TC = 70°C) Average Gate Power (t = 8.3 msec, TC = 70°C) V PG(AV) 0.35 W TJ −40 to 110 °C Storage Temperature Range Tstg −40 to 150 °C Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. (VDRM and VRRM for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. December, 2005 − Rev. 3 1 2 3 600 800 Operating Junction Temperature Range © Semiconductor Components Industries, LLC, 2005 TO−220AB CASE 221A−09 STYLE 4 Unit 1 x A Y WW G = M, or N = Assembly Location = Year = Work Week = Pb−Free Package PIN ASSIGNMENT 1 Main Terminal 1 2 Main Terminal 2 3 Gate 4 Main Terminal 2 ORDERING INFORMATION Device Package Shipping MAC12SM TO−220AB 50 Units / Rail MAC12SMG TO−220AB (Pb−Free) 50 Units / Rail MAC12SN TO−220AB 50 Units / Rail MAC12SNG TO−220AB (Pb−Free) 50 Units / Rail Preferred devices are recommended choices for future use and best overall value. Publication Order Number: MAC12SM/D MAC12SM, MAC12SN THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction−to−Case Junction−to−Ambient Symbol Value Unit RqJC RqJA 2.2 62.5 °C/W TL 260 °C Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 10 Seconds ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted; Electricals apply in both directions) Characteristic Symbol Min Typ Max Unit − − − − 0.01 2.0 − − 1.85 − − − 1.5 2.5 2.7 5.0 5.0 5.0 − 2.5 10 − − − 3.0 5.0 3.0 15 20 15 0.45 0.45 0.45 0.68 0.62 0.67 1.5 1.5 1.5 (di/dt)c 8.0 10 − A/ms Critical Rate of Rise of Off-State Voltage (VD = 67% VDRM, Exponential Waveform, RGK = 1 KW, TJ = 110°C) dV/dt 15 40 − V/ms Repetitive Critical Rate of Rise of On-State Current IPK = 50 A; PW = 40 msec; diG/dt = 1 A/msec; Igt = 100 mA; f = 60 Hz di/dt − − 10 A/ms OFF CHARACTERISTICS Peak Repetitive Blocking Current (VD = Rated VDRM, VRRM; Gate Open) IDRM, IRRM TJ = 25°C TJ = 110°C mA ON CHARACTERISTICS Peak On-State Voltage (Note 2) (ITM = ± 17 A) VTM Gate Trigger Current (Continuous dc) (VD = 12 V, RL = 100 W) MT2(+), G(+) MT2(+), G(−) MT2(−), G(−) IGT Holding Current (VD = 12 V, Gate Open, Initiating Current = ±200 mA) IH Latching Current (VD = 12 V, IG = 5 mA) MT2(+), G(+) MT2(+), G(−) MT2(−), G(−) IL Gate Trigger Voltage (Continuous dc) (VD = 12 V, RL = 100 W) MT2(+), G(+) MT2(+), G(−) MT2(−), G(−) V mA mA mA VGT V DYNAMIC CHARACTERISTICS Critical Rate of Change of Commutating Current (VD = 400 V, ITM = 3.5 A, Commutating dV/dt = 10 V/ms, Gate Open, TJ = 110°C, f = 500 Hz, Snubber: Cs = 0.01 mf, Rs = 15 W) 2. Pulse Test: Pulse Width ≤ 2.0 ms, Duty Cycle ≤ 2%. Voltage Current Characteristic of Triacs (Bidirectional Device) + Current Symbol Parameter VDRM Peak Repetitive Forward Off State Voltage IDRM Peak Forward Blocking Current VRRM Peak Repetitive Reverse Off State Voltage IRRM Peak Reverse Blocking Current VTM Maximum On State Voltage IH Holding Current VTM Quadrant 1 MainTerminal 2 + on state IH IRRM at VRRM off state IH Quadrant 3 MainTerminal 2 − http://onsemi.com 2 VTM + Voltage IDRM at VDRM MAC12SM, MAC12SN Quadrant Definitions for a Triac MT2 POSITIVE (Positive Half Cycle) + (+) MT2 Quadrant II (+) MT2 (−) IGT GATE Quadrant I (+) IGT GATE MT1 MT1 REF REF IGT − + IGT (−) MT2 Quadrant III (−) MT2 Quadrant IV (+) IGT GATE (−) IGT GATE MT1 MT1 REF REF − MT2 NEGATIVE (Negative Half Cycle) All polarities are referenced to MT1. With in−phase signals (using standard AC lines) quadrants I and III are used. 0.90 VGT, GATE TRIGGER VOLTAGE (VOLTS) IGT, GATE TRIGGER CURRENT (mA) 100 Q2 10 Q3 Q1 1 0.1 −40 −25 −10 5 20 35 50 65 80 TJ, JUNCTION TEMPERATURE (°C) 95 110 Q1 0.85 0.80 Q3 0.75 0.70 Q2 0.65 0.60 0.55 0.50 0.45 0.40 −40 −25 −10 5 20 35 50 65 80 TJ, JUNCTION TEMPERATURE (°C) 95 110 Figure 2. Typical Gate Trigger Voltage versus Junction Temperature Figure 1. Typical Gate Trigger Current versus Junction Temperature http://onsemi.com 3 MAC12SM, MAC12SN 100 IH, HOLDING CURRENT (mA) IL , LATCHING CURRENT (mA) 100 Q1 10 Q2 Q3 1 0.1 −40 −25 −10 5 20 35 50 65 80 TJ, JUNCTION TEMPERATURE (°C) 95 P(AV), AVERAGE POWER DISSIPATION (WATTS) TC , CASE TEMPERATURE (°C) 110 100 30°, 60° 90 90° 80 180° 70 DC 0 2 4 6 8 10 IT(RMS), RMS ON-STATE CURRENT (AMPS) MT2 Positive 1 MT2 Negative 0.1 −40 −25 −10 5 20 35 50 65 80 TJ, JUNCTION TEMPERATURE (°C) 110 Figure 3. Typical Latching Current versus Junction Temperature 60 10 12 Figure 4. Typical Holding Current versus Junction Temperature 25 DC 20 180° 120° 90° 15 60° 10 30° 5 0 0 IT, INSTANTANEOUS ON-STATE CURRENT (AMPS) Typical @ TJ = 25°C Maximum @ TJ = 110°C Maximum @ TJ = 25°C 10 1 2 4 6 8 10 IT(AV), AVERAGE ON-STATE CURRENT (AMPS) 12 Figure 6. On-State Power Dissipation r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) Figure 5. Typical RMS Current Derating 100 95 110 1 0.1 0.01 0.1 1 10 100 t, TIME (ms) 1000 Figure 8. Typical Thermal Response 0.1 0.5 1.5 2.5 3.5 4.5 VT, INSTANTANEOUS ON-STATE VOLTAGE (VOLTS) Figure 7. Typical On-State Characteristics http://onsemi.com 4 10000 MAC12SM, MAC12SN PACKAGE DIMENSIONS TO−220AB CASE 221A−09 ISSUE AA −T− B SEATING PLANE C F T S 4 DIM A B C D F G H J K L N Q R S T U V Z A Q 1 2 3 U H K Z L R V NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. J G D N INCHES MIN MAX 0.570 0.620 0.380 0.405 0.160 0.190 0.025 0.035 0.142 0.147 0.095 0.105 0.110 0.155 0.018 0.025 0.500 0.562 0.045 0.060 0.190 0.210 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 0.045 −−− −−− 0.080 STYLE 4: PIN 1. 2. 3. 4. MILLIMETERS MIN MAX 14.48 15.75 9.66 10.28 4.07 4.82 0.64 0.88 3.61 3.73 2.42 2.66 2.80 3.93 0.46 0.64 12.70 14.27 1.15 1.52 4.83 5.33 2.54 3.04 2.04 2.79 1.15 1.39 5.97 6.47 0.00 1.27 1.15 −−− −−− 2.04 MAIN TERMINAL 1 MAIN TERMINAL 2 GATE MAIN TERMINAL 2 ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: N. American Technical Support: 800−282−9855 Toll Free Literature Distribution Center for ON Semiconductor USA/Canada P.O. Box 61312, Phoenix, Arizona 85082−1312 USA Phone: 480−829−7710 or 800−344−3860 Toll Free USA/Canada Japan: ON Semiconductor, Japan Customer Focus Center 2−9−1 Kamimeguro, Meguro−ku, Tokyo, Japan 153−0051 Fax: 480−829−7709 or 800−344−3867 Toll Free USA/Canada Phone: 81−3−5773−3850 Email: [email protected] http://onsemi.com 5 ON Semiconductor Website: http://onsemi.com Order Literature: http://www.onsemi.com/litorder For additional information, please contact your local Sales Representative. MAC12SM/D