Dc DMBT5401 Technical specifications of pnp epitaxial planar transistor Datasheet

DC COMPONENTS CO., LTD.
DMBT5401
DISCRETE SEMICONDUCTORS
R
TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR
Description
Designed for general purpose applications requiring
high breakdown voltage.
SOT-23
.020(0.50)
.012(0.30)
Pinning
1 = Base
2 = Emitter
3 = Collector
3
.108(0.65)
.089(0.25)
.063(1.60)
.055(1.40)
1
2
Absolute Maximum Ratings(TA=25oC)
Characteristic
Symbol
Rating
Unit
Collector-Base Voltage
VCBO
-160
V
Collector-Emitter Voltage
VCEO
-150
V
Emitter-Base Voltage
VEBO
-5
V
Collector Current
IC
-500
mA
Total Power Dissipation
PD
225
mW
Junction Temperature
TJ
+150
o
Storage Temperature
TSTG
-55 to +150
o
.091(2.30)
.067(1.70)
.045(1.15)
.034(0.85)
.118(3.00)
.110(2.80)
.0043(0.11)
.0035(0.09)
.051(1.30)
.035(0.90)
.026(0.65)
.010(0.25)
C
.004
Max
(0.10)
.027(0.67)
.013(0.32)
Dimensions in inches and (millimeters)
C
Electrical Characteristics
o
(Ratings at 25 C ambient temperature unless otherwise specified)
Characteristic
Symbol
Min
Typ
Max
Unit
Collector-Base Breakdown Volatge
BVCBO
-160
-
-
V
Collector-Emitter Breakdown Voltage
BVCEO
-150
-
-
V
IC=-1mA
Emitter-Base Breakdown Volatge
BVEBO
-5
-
-
V
IE=-10µA
ICBO
-
-
-50
nA
VCB=-120V
Collector Cutoff Current
(1)
Collector-Emitter Saturation Voltage
(1)
Base-Emitter Saturation Voltage
(1)
DC Current Gain
Transition Frequency
Output Capacitance
(1)Pulse Test: Pulse Width
Test Conditions
IC=-100µA
VCE(sat)1
-
-
-0.2
V
IC=-10mA, IB=-1mA
VCE(sat)2
-
-
-0.5
V
IC=-50mA, IB=-5mA
VBE(sat)1
-
-
-1
V
IC=-10mA, IB=-1mA
VBE(sat)2
-
-
-1
V
IC=-50mA, IB=-5mA
hFE1
50
-
-
-
IC=-1mA, VCE=-5V
hFE2
60
-
240
-
IC=-10mA, VCE=-5V
hFE3
50
-
-
-
IC=-50mA, VCE=-5V
fT
100
-
300
MHz
-
-
6
pF
Cob
380µs, Duty Cycle
2%
IC=-10mA, VCE=-10V, f=100MHz
VCB=-10V, f=1MHz
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