CDIL BC858 Silicon planar epitaxial transistor Datasheet

Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
SOT-23 Formed SMD Package
BC856 BC857
BC858
SILICON PLANAR EPITAXIAL TRANSISTORS
P–N–P transistors
Marking
BC856 = 3D
BC856A = 3A
BC856B = 3B
BC857 = 3H
BC857A = 3E
BC857B = 3F
BC857C = 3G
BC858 = 3M
BC858A = 3J
BC858B = 3K
BC858C = 3L
PACKAGE OUTLINE DETAILS
ALL DIMENSIONS IN mm
Pin configuration
1 = BASE
2 = EMITTER
3 = COLLECTOR
3
1
2
ABSOLUTE MAXIMUM RATINGS
Collector–emitter voltage (+VBE = 1 V)
Collector–emitter voltage (open base)
Collector current (peak value)
Total power dissipation
up to Tamb = 60 °C
Junction temperature
Small–signal current gain
–IC = 2 mA; –VCE = 5 V; f = 1 kHz
Transition frequency at f = 100 MHz
–IC = 10 mA; –VCE = 5 V
Noise figure at RS = 2 kW
–IC = 200 mA; –VCE = 5 V
f = 1 kHz; B = 200 Hz
Continental Device India Limited
Data Sheet
–V CEX max.
–V CE0 max.
–I CM max.
Ptot
Tj
max.
max.
hfe
BC856 BC857 BC858
80
50
30 V
65
45
30 V
200
mA
250
150
mW
°C
75 to 900
fT
>
100
MHz
F
<
10
dB
Page 1 of 3
BC856 BC857
BC858
RATINGS (at TA = 25°C unless otherwise specified)
Limiting values
BC856 BC857 BC858
Collector–base voltage (open emitter)
Collector–emitter voltage (+VBE = 1 V)
Collector–emitter voltage (open base)
Emitter–base voltage (open collector)
Collector current (d.c.)
Collector current (peak value)
Emitter current (peak value)
Base current (peak value)
Total power dissipation
up to Tamb: 60 °C
Storage temperature
Junction temperature
–VCBO
–VCEX
–VCEO
–VEBO
–I C
–ICM
IEM
–IBM
max.
max.
max.
max.
max.
max.
max.
max.
Ptot
Tstg
Tj
max.
THERMAL CHARACTERISTICS
Tj = Px (Rth j–t + Rth t–s + Rth s–a) + Tamb
Thermal resistance
From junction to tab
From tab to soldering points
From soldering points to ambient
Rth j–t
Rth t–s
Rth s–a
CHARACTERISTICS
Tj = 25 °C unless otherwise specified
Collector cut–off current
Tj = 25°C
IE = 0; –VCB = 30V;
Tj = 150° C
Base–emitter voltage
–IC = 2 mA; –VCE = 5 V
–IC = 10 mA; –VCE = 5 V
Saturation voltages
–IC = 10 mA; –IB = 0,5 mA
–IC = 100 mA; –IB = 5 mA
Knee voltage
–IC = 10 mA; –IB = value for which
–IC = 11 mA at –VCE = 1 V
Continental Device India Limited
80
80
65
5
50
50
45
5
100
200
200
200
30
30
30
5
V
V
V
V
mA
mA
mA
mA
250
–55 to +150
150
mW
°C
°C
=
=
=
60
280
90
K/W
K/W
K/W
–ICBO
typ.
<
1
15
nA
nA
–ICBO
<
4
mA
–VBE
typ.
650
600 to 750
mV
mV
–VBE
<
820
mV
–VCEsat
typ.
<
75
300
mV
mV
–VBEsat
typ.
700
mV
–VCEsat
typ.
<
250
650
mV
mV
–VBEsat
typ.
850
mV
–VCEK
typ.
<
250
600
mV
mV
Data Sheet
max.
Page 2 of 3
BC856 BC857
BC858
Collector capacitance at f = 1 MHz
IE = Ie = 0; –VCB = 10 V
Transition frequency at f = 100 MHz
–IC = 10 mA; –VCE = 5 V
Small–signal current gain at f = 1 kHz
–IC = 2 mA; –VCE = 5 V
Noise figure at RS = 2 kW
–IC = 200 mA; –VCE = 5 V
f = 1 kHz; B = 200 Hz
D.C. current gain
–IC = 2 mA; –VCE = 5 V BC856
BC858/857
BC856A/857A/858A
BC856B/857B/858B
BC857C/858C
Cc
typ.
4,5 pF
fT
>
100 MHz
hfe
125 to 800
F
typ.
<
hFE
hFE
hFE
hFE
hFE
220
125
125
220
420
2 dB
10 dB
to
to
to
to
to
475
800
250
475
800
Disclaimer
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for application in your product(s) as per your requirement. It is recommended that you completely review our Data Sheet(s) so as
to confirm that the Device(s) meet functionality parameters for your application. The information furnished on the CDIL Web Site/
CD is believed to be accurate and reliable. CDIL however, does not assume responsibility for inaccuracies or incomplete
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neither does it convey any license under its patent rights nor rights of others. These products are not designed for use in life
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CDIL is a registered Trademark of
Continental Device India Limited
C-120 Naraina Industrial Area, New Delhi 110 028, India.
Telephone + 91-11-579 6150 Fax + 91-11-579 9569, 579 5290
e-mail [email protected]
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Continental Device India Limited
Data Sheet
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