MITSUBISHI Nch POWER MOSFET FS30AS-2 HIGH-SPEED SWITCHING USE FS30AS-2 OUTLINE DRAWING Dimensions in mm 0.5 ± 0.1 1.5 ± 0.2 6.5 5.0 ± 0.2 2.3 2.3 10MAX. 2.3MIN. 1.0 A 0.5 ± 0.2 0.8 2.3 0.9MAX. 1.0MAX. 5.5 ± 0.2 r q w e wr ¡10V DRIVE ¡VDSS ................................................................................ 100V ¡rDS (ON) (MAX) ........................................................... 100mΩ ¡ID ......................................................................................... 30A ¡Integrated Fast Recovery Diode (TYP.) ............. 95ns q GATE w DRAIN e SOURCE r DRAIN q e MP-3 APPLICATION Motor control, Lamp control, Solenoid control DC-DC converter, etc. MAXIMUM RATINGS Symbol (Tc = 25°C) Ratings Unit VDSS Drain-source voltage VGS = 0V 100 V VGSS ID Gate-source voltage Drain current VDS = 0V ±20 30 V A IDM IDA Drain current (Pulsed) Avalanche drain current (Pulsed) 120 30 A A IS ISM Source current Source current (Pulsed) 30 120 A A PD T ch Maximum power dissipation Channel temperature 35 –55 ~ +150 W °C –55 ~ +150 °C g T stg — Parameter Conditions L = 100µH Storage temperature Weight Typical value 0.26 Feb.1999 MITSUBISHI Nch POWER MOSFET FS30AS-2 HIGH-SPEED SWITCHING USE ELECTRICAL CHARACTERISTICS (Tch = 25°C) Symbol Parameter V (BR) DSS IGSS Drain-source breakdown voltage Gate-source leakage current IDSS VGS (th) Drain-source leakage current Gate-source threshold voltage rDS (ON) Drain-source on-state resistance VDS (ON) y fs Drain-source on-state voltage Forward transfer admittance Ciss Coss Input capacitance Output capacitance Crss td (on) Reverse transfer capacitance Turn-on delay time tr td (off) Rise time Turn-off delay time tf Fall time VSD Rth (ch-c) Source-drain voltage Thermal resistance trr Reverse recovery time Limits Test conditions Unit Min. Typ. Max. 100 — — — — ±0.1 V µA — 2.0 — 3.0 0.1 4.0 mA V ID = 1mA, VGS = 0V VGS = ±20V, VDS = 0V VDS = 100V, V GS = 0V ID = 1mA, VDS = 10V ID = 15A, VGS = 10V — 69 100 mΩ ID = 15A, VDS = 10V — — 1.04 18 1.50 — V S VDS = 10V, VGS = 0V, f = 1MHz — — 1250 230 — — pF pF — — 105 25 — — pF ns — — 60 60 — — ns ns ID = 15A, VGS = 10V VDD = 50V, ID = 15A, VGS = 10V, RGEN = RGS = 50Ω IS = 15A, VGS = 0V Channel to case IS = 30A, dis/dt = –100A/µs — 50 — ns — — 1.0 — 1.5 3.57 — 95 — V °C/W ns PERFORMANCE CURVES DRAIN CURRENT ID (A) 40 30 20 10 0 0 50 100 150 102 7 5 3 2 tw = 10ms 101 7 5 3 2 100ms 1ms 100 10ms 7 TC = 25°C 5 Single Pulse DC 3 3 5 7 100 2 3 5 7 101 2 3 5 7 102 2 3 200 CASE TEMPERATURE TC (°C) DRAIN-SOURCE VOLTAGE VDS (V) OUTPUT CHARACTERISTICS (TYPICAL) OUTPUT CHARACTERISTICS (TYPICAL) VGS = 20V 10V 50 VGS = 20V 10V 8V 7V 20 40 7V 30 6V 20 PD = 35W 10 6V TC = 25°C Pulse Test 8V TC = 25°C Pulse Test DRAIN CURRENT ID (A) MAXIMUM SAFE OPERATING AREA 3 2 DRAIN CURRENT ID (A) POWER DISSIPATION PD (W) POWER DISSIPATION DERATING CURVE 50 PD = 35W 16 12 8 5V 4 5V 0 0 1 2 3 4 DRAIN-SOURCE VOLTAGE VDS (V) 5 0 0 0.4 0.8 1.2 1.6 2.0 DRAIN-SOURCE VOLTAGE VDS (V) Feb.1999 MITSUBISHI Nch POWER MOSFET FS30AS-2 HIGH-SPEED SWITCHING USE ON-STATE VOLTAGE VS. GATE-SOURCE VOLTAGE (TYPICAL) ON-STATE RESISTANCE VS. DRAIN CURRENT (TYPICAL) 100 4.0 50A 3.0 30A 2.0 1.0 0 10A TC = 25°C Pulse Test 0 4 8 12 40 20 3 5 7 100 2 3 5 7 101 2 3 5 7 102 2 3 TRANSFER CHARACTERISTICS (TYPICAL) FORWARD TRANSFER ADMITTANCE VS.DRAIN CURRENT (TYPICAL) TC = 25°C VDS = 10V Pulse Test 30 20 10 102 VDS = 10V 7 Pulse Test 5 4 3 2 101 7 5 4 3 TC = 25°C 75°C 125°C 2 0 4 8 12 16 100 0 10 20 2 3 4 5 7 101 2 3 4 5 7 102 GATE-SOURCE VOLTAGE VGS (V) DRAIN CURRENT ID (A) CAPACITANCE VS. DRAIN-SOURCE VOLTAGE (TYPICAL) SWITCHING CHARACTERISTICS (TYPICAL) Tch = 25°C 7 VGS = 0V 5 3 2 103 7 5 3 2 Ciss 102 7 5 3 2 Coss Crss 3 5 7100 2 3 5 7 101 2 3 5 7 102 2 3 DRAIN-SOURCE VOLTAGE VDS (V) SWITCHING TIME (ns) 104 f = 1MHZ CAPACITANCE Ciss, Coss, Crss (pF) 20V 60 DRAIN CURRENT ID (A) 40 2 VGS = 10V 80 0 20 FORWARD TRANSFER ADMITTANCE yfs (S) DRAIN CURRENT ID (A) 16 TC = 25°C Pulse Test GATE-SOURCE VOLTAGE VGS (V) 50 0 DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (mΩ) DRAIN-SOURCE ON-STATE VOLTAGE VDS (ON) (V) 5.0 103 7 5 4 3 Tch = 25°C VDD = 50V VGS = 10V RGEN = RGS = 50Ω 2 102 7 5 4 3 2 101 0 10 td(off) tf tr td(on) 2 3 4 5 7 101 2 3 4 5 7 102 DRAIN CURRENT ID (A) Feb.1999 MITSUBISHI Nch POWER MOSFET FS30AS-2 HIGH-SPEED SWITCHING USE 20 SOURCE CURRENT IS (A) 12 VDS = 20V 8 50V 80V 4 0 10 20 30 40 30 TC = 125°C 20 75°C 10 0 0 0.4 0.8 1.2 1.6 2.0 SOURCE-DRAIN VOLTAGE VSD (V) ON-STATE RESISTANCE VS. CHANNEL TEMPERATURE (TYPICAL) THRESHOLD VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) 5.0 2 100 7 5 4 3 2 –50 0 50 100 VDS = 10V ID = 1mA 4.0 3.0 2.0 1.0 0 150 CHANNEL TEMPERATURE Tch (°C) BREAKDOWN VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) 1.4 VGS = 0V ID = 1mA 1.2 1.0 0.8 0.6 0.4 25°C GATE CHARGE Qg (nC) 101 7 VGS = 10V ID = 1/2ID 5 Pulse Test 4 3 10–1 VGS = 0V Pulse Test 40 50 GATE-SOURCE THRESHOLD VOLTAGE VGS (th) (V) DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (25°C) DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (t°C) DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (t°C) 50 Tch = 25°C ID = 30A 16 0 DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (25°C) SOURCE-DRAIN DIODE FORWARD CHARACTERISTICS (TYPICAL) –50 0 50 100 150 CHANNEL TEMPERATURE Tch (°C) –50 0 50 100 150 CHANNEL TEMPERATURE Tch (°C) TRANSIENT THERMAL IMPEDANCE Zth (ch–c) (°C/W) GATE-SOURCE VOLTAGE VGS (V) GATE-SOURCE VOLTAGE VS.GATE CHARGE (TYPICAL) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS 101 7 5 D = 1.0 3 0.5 2 0.2 100 7 0.1 5 3 2 10–1 7 5 3 2 0.05 0.02 0.01 Single Pulse PDM tw T D= tw T 10–2 –4 10 2 3 5710–3 2 3 5710–22 3 5710–12 3 57100 2 3 57101 2 3 57102 PULSE WIDTH tw (s) Feb.1999