Infineon AUIRF1405ZSTRL Automotive grade Datasheet

AUIRF1405ZS
AUIRF1405ZL
AUTOMOTIVE GRADE
HEXFET® Power MOSFET
Features
 Advanced Process Technology
 Ultra Low On-Resistance
 175°C Operating Temperature
 Fast Switching
 Repetitive Avalanche Allowed up to Tjmax
 Lead-Free, RoHS Compliant
 Automotive Qualified *
VDSS
RDS(on) max.
Package Type
AUIRF1405ZL
TO-262
AUIRF1405ZS
150A
D
D
S
D -Pak
S
D
G
G
D2Pak
AUIRF1405ZS
TO-262
AUIRF1405ZL
G
Gate
D
Drain
Standard Pack
Form
Quantity
Tube
50
Tube
50
Tape and Reel Left
800
2
4.9m
ID
Description
Specifically designed for Automotive applications, this
HEXFET® Power MOSFET utilizes the latest processing
techniques to achieve extremely low on-resistance per silicon
area. Additional features of this design are a 175°C junction
operating temperature, fast switching speed and improved
repetitive avalanche rating . These features combine to make
this design an extremely efficient and reliable device for use in
Automotive applications and a wide variety of other
applications.
Base part number
55V
S
Source
Orderable Part Number
AUIRF1405ZL
AUIRF1405ZS
AUIRF1405ZSTRL
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress
ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance
and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless
otherwise specified.
Symbol
Parameter
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V
150
ID @ TC = 100°C
IDM
PD @TC = 25°C
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current 
Maximum Power Dissipation
110
600
230
VGS
EAS
EAS (tested)
IAR
EAR
TJ
TSTG
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy (Thermally Limited) 
Single Pulse Avalanche Energy Tested Value 
Avalanche Current 
Repetitive Avalanche Energy 
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds (1.6mm from case)
Thermal Resistance
Symbol
RJC
RJA
Parameter
Junction-to-Case
Junction-to-Ambient ( PCB Mount, steady state) 
Max.
Units
A
W
1.5
± 20
270
420
See Fig.15,16, 12a, 12b
W/°C
V
mJ
A
mJ
-55 to + 175
°C
300
Typ.
Max.
Units
–––
0.65
40
°C/W
HEXFET® is a registered trademark of Infineon.
*Qualification standards can be found at www.infineon.com
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AUIRF1405ZS/L
Static @ TJ = 25°C (unless otherwise specified)
V(BR)DSS
V(BR)DSS/TJ
RDS(on)
VGS(th)
gfs
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Trans conductance
IDSS
Drain-to-Source Leakage Current
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Min. Typ. Max. Units
Conditions
55
––– –––
V VGS = 0V, ID = 250µA
––– 0.049 ––– V/°C Reference to 25°C, ID = 1mA
–––
3.7
4.9 m VGS = 10V, ID = 75A 
2.0
–––
4.0
V VDS = VGS, ID = 250µA
88
––– –––
S VDS = 25V, ID = 75A
––– –––
20
VDS = 55 V, VGS = 0V
µA
––– ––– 250
VDS = 55V,VGS = 0V,TJ =125°C
––– ––– 200
VGS = 20V
nA
––– ––– -200
VGS = -20V
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
–––
–––
–––
–––
–––
–––
–––
120
31
46
18
110
48
82
180
–––
–––
–––
–––
–––
–––
LD
Internal Drain Inductance
–––
4.5
–––
LS
Internal Source Inductance
–––
7.5
–––
–––
–––
–––
–––
–––
–––
4780
770
410
2730
600
910
–––
–––
–––
–––
–––
–––
Min.
Typ. Max. Units
–––
–––
75
–––
–––
600
–––
–––
–––
–––
30
30
1.3
46
45
Input Capacitance
Ciss
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Coss
Output Capacitance
Coss
Output Capacitance
Effective Output Capacitance
Coss eff.
Diode Characteristics
Parameter
Continuous Source Current
IS
(Body Diode)
Pulsed Source Current
ISM
(Body Diode)
VSD
Diode Forward Voltage
Reverse Recovery Time
trr
Qrr
Reverse Recovery Charge
Forward Turn-On Time
ton
ID = 75A
nC VDS = 44V
VGS = 10V
VDD = 25V
ID = 75A
ns
RG= 4.4
VGS = 10V 
Between lead,
6mm (0.25in.)
nH
from package
and center of die contact
VGS = 0V
VDS = 25V
ƒ = 1.0MHz
pF
VGS = 0V, VDS = 1.0V ƒ = 1.0MHz
VGS = 0V, VDS = 44V ƒ = 1.0MHz
VGS = 0V, VDS = 0V to 44V 
Conditions
MOSFET symbol
showing the
A
integral reverse
p-n junction diode.
V TJ = 25°C,IS = 75A,VGS = 0V 
ns TJ = 25°C ,IF = 75A, VDD = 25V
nC di/dt = 100A/µs 
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:







Repetitive rating; pulse width limited by max. junction temperature. (See fig. 11)
Limited by TJmax, starting TJ = 25°C, L = 0.10mH, RG = 25, IAS = 75A, VGS =10V. Part not recommended for use above this value.
Pulse width 1.0ms; duty cycle  2%.
Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS.
Limited by TJmax , see Fig.12a, 12b, 15, 16 for typical repetitive avalanche performance.
This value determined from sample failure population, starting TJ = 25°C, L = 0.10mH, RG = 25, IAS = 75A, VGS =10V.
This is applied to D2Pak When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and
soldering techniques refer to application note #AN-994
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AUIRF1405ZS/L
1000
1000
100
BOTTOM
TOP
10
ID, Drain-to-Source Current (A)
ID, Drain-to-Source Current (A)
TOP
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
4.5V
10
4.5V
10
1
1
1
BOTTOM
20µs PULSE WIDTH
Tj = 175°C
20µs PULSE WIDTH
Tj = 25°C
0.1
100
0.1
100
10
100
Fig. 2 Typical Output Characteristics
Fig. 1 Typical Output Characteristics
200
Gfs, Forward Transconductance (S)
1000
ID, Drain-to-Source Current )
1
VDS , Drain-to-Source Voltage (V)
VDS , Drain-to-Source Voltage (V)
T J = 150°C
100
T J = 25°C
10
VDS = 25V
20µs PULSE WIDTH
175
150
T J = 25°C
125
100
T J = 175°C
75
50
25
0
1
4
6
8
10
12
VGS, Gate-to-Source Voltage (V)
Fig. 3 Typical Transfer Characteristics
3
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
0
25
50
75
100 125 150 175 200
ID ,Drain-to-Source Current (A)
Fig. 4 Typical Forward Trans conductance
vs. Drain Current
2015-11-11
AUIRF1405ZS/L
100000
12.0
VGS = 0V,
f = 1 MHZ
Ciss = C gs + Cgd, C ds SHORTED
Crss = C gd
VGS, Gate-to-Source Voltage (V)
ID= 75A
C, Capacitance(pF)
Coss = Cds + Cgd
10000
C iss
C oss
1000
C rss
VDS = 44V
VDS = 28V
10.0
8.0
6.0
4.0
2.0
0.0
100
1
10
0
100
Fig 5. Typical Capacitance vs.
Drain-to-Source Voltage
60
80
100
120
Fig 6. Typical Gate Charge vs.
Gate-to-Source Voltage
1000.00
10000
ID, Drain-to-Source Current (A)
ISD, Reverse Drain Current (A)
40
QG Total Gate Charge (nC)
VDS , Drain-to-Source Voltage (V)
T J = 175°C
100.00
OPERATION IN THIS AREA
LIMITED BY R DS (on)
1000
10.00
100
T J = 25°C
1.00
VGS = 0V
0.10
0.0
0.5
1.0
1.5
2.0
VSD , Source-to-Drain Voltage (V)
Fig. 7 Typical Source-to-Drain Diode
Forward Voltage
4
20
2.5
100µsec
10
Tc = 25°C
Tj = 175°C
Single Pulse
1msec
10msec
1
1
10
100
1000
VDS , Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
2015-11-11
AUIRF1405ZS/L
150
RDS(on) , Drain-to-Source On Resistance
(Normalized)
2.5
ID, Drain Current (A)
125
100
75
50
25
0
ID = 75A
VGS = 10V
2.0
1.5
1.0
0.5
25
50
75
100
125
150
-60 -40 -20 0
175
T C , Case Temperature (°C)
20 40 60 80 100 120 140 160 180
T J , Junction Temperature (°C)
Fig 10. Normalized On-Resistance
vs. Temperature
Fig 9. Maximum Drain Current vs. Case Temperature
1
Thermal Response ( Z thJC )
D = 0.50
0.20
0.1
0.10
0.05
0.02
0.01
0.01
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.001
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
10
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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AUIRF1405ZS/L
15V
DRIVER
L
VDS
D.U.T
RG
+
V
- DD
IAS
20V
A
0.01
tp
Fig 12a. Unclamped Inductive Test Circuit
V(BR)DSS
tp
EAS , Single Pulse Avalanche Energy (mJ)
500
ID
TOP
31A
53A
BOTTOM 75A
400
300
200
100
0
25
50
75
100
125
150
175
Starting T J , Junction Temperature (°C)
Fig 12c. Maximum Avalanche Energy
vs. Drain Current
I AS
Fig 12b. Unclamped Inductive Waveforms
Id
Vds
Vgs
4.0
Qgs1 Qgs2
Qgd
Qgodr
Fig 13a. Gate Charge Waveform
VGS(th) Gate threshold Voltage (V)
Vgs(th)
3.5
3.0
2.5
ID = 250µA
2.0
1.5
1.0
-75 -50 -25
0
25
50
75 100 125 150 175 200
T J , Temperature ( °C )
Fig 14. Threshold Voltage vs. Temperature
Fig 13b. Gate Charge Test Circuit
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AUIRF1405ZS/L
10000
Avalanche Current (A)
Duty Cycle = Single Pulse
1000
100
Allowed avalanche Current vs
avalanche pulsewidth, tav
assuming  Tj = 25°C due to
avalanche losses
0.01
0.05
10
0.10
1
1.0E-08
1.0E-07
1.0E-06
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
tav (sec)
Fig 15. Typical Avalanche Current vs. Pulse width
Notes on Repetitive Avalanche Curves , Figures 15, 16:
(For further info, see AN-1005 at www.infineon.com)
EAR , Avalanche Energy (mJ)
300
TOP
Single Pulse
BOTTOM 10% Duty Cycle
ID = 75A
250
1. Avalanche failures assumption:
Purely a thermal phenomenon and failure occurs at a temperature far in
excess of Tjmax. This is validated for every part type.
2. Safe operation in Avalanche is allowed as long as Tjmax is not exceeded.
3. Equation below based on circuit and waveforms shown in Figures 12a, 12b.
4. PD (ave) = Average power dissipation per single avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase
during avalanche).
6. Iav = Allowable avalanche current.
7. T = Allowable rise in junction temperature, not to exceed Tjmax (assumed as
25°C in Figure 15, 16).
tav = Average time in avalanche.
D = Duty cycle in avalanche = tav ·f
ZthJC(D, tav) = Transient thermal resistance, see Figures 13)
200
150
100
50
0
25
50
75
100
125
150
Starting T J , Junction Temperature (°C)
175
PD (ave) = 1/2 ( 1.3·BV·Iav) = T/ ZthJC
Iav = 2T/ [1.3·BV·Zth]
EAS (AR) = PD (ave)·tav
Fig 16. Maximum Avalanche Energy
vs. Temperature
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AUIRF1405ZS/L
Fig 17. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET® Power MOSFETs
Fig 18a. Switching Time Test Circuit
Fig 18b. Switching Time Waveforms
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AUIRF1405ZS/L
D2Pak (TO-263AB) Package Outline (Dimensions are shown in millimeters (inches))
D2Pak (TO-263AB) Part Marking Information
Part Number
AUIRF1405ZS
Date Code
YWWA
IR Logo
XX

Y= Year
WW= Work Week
XX
Lot Code
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AUIRF1405ZS/L
TO-262 Package Outline (Dimensions are shown in millimeters (inches)
TO-262 Part Marking Information
Part Number
AUIRF1405ZL
Date Code
YWWA
IR Logo
XX

Y= Year
WW= Work Week
XX
Lot Code
10
2015-11-11
AUIRF1405ZS/L
D2Pak (TO-263AB) Tape & Reel Information (Dimensions are shown in millimeters (inches))
TRR
1.60 (.063)
1.50 (.059)
4.10 (.161)
3.90 (.153)
FEED DIRECTION 1.85 (.073)
1.65 (.065)
1.60 (.063)
1.50 (.059)
11.60 (.457)
11.40 (.449)
0.368 (.0145)
0.342 (.0135)
15.42 (.609)
15.22 (.601)
24.30 (.957)
23.90 (.941)
TRL
10.90 (.429)
10.70 (.421)
1.75 (.069)
1.25 (.049)
4.72 (.136)
4.52 (.178)
16.10 (.634)
15.90 (.626)
FEED DIRECTION
13.50 (.532)
12.80 (.504)
27.40 (1.079)
23.90 (.941)
4
330.00
(14.173)
MAX.
NOTES :
1. COMFORMS TO EIA-418.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION MEASURED @ HUB.
4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.
11
60.00 (2.362)
MIN.
26.40 (1.039)
24.40 (.961)
3
30.40 (1.197)
MAX.
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AUIRF1405ZS/L
Qualification Information
Qualification Level
Moisture Sensitivity Level
Machine Model
ESD
Human Body Model
Charged Device Model
RoHS Compliant
Automotive
(per AEC-Q101)
Comments: This part number(s) passed Automotive qualification. Infineon’s
Industrial and Consumer qualification level is granted by extension of the higher
Automotive level.
TO-262
MSL1
D2-Pak
Class M4 (+/-425)†
AEC-Q101-002
Class H1C (+/-2000V)†
AEC-Q101-001
Class C5 (+/-1125V)†
AEC-Q101-005
Yes
† Highest passing voltage.
Revision History
Date
11/11/2015
Comments


Updated datasheet with corporate template
Corrected ordering table on page 1.
Published by
Infineon Technologies AG
81726 München, Germany
© Infineon Technologies AG 2015
All Rights Reserved.
IMPORTANT NOTICE
The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics
(“Beschaffenheitsgarantie”). With respect to any examples, hints or any typical values stated herein and/or any
information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and
liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third
party.
In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this
document and any applicable legal requirements, norms and standards concerning customer’s products and any use of
the product of Infineon Technologies in customer’s applications.
The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of
customer’s technical departments to evaluate the suitability of the product for the intended application and the
completeness of the product information given in this document with respect to such application.
For further information on the product, technology, delivery terms and conditions and prices please contact your nearest
Infineon Technologies office (www.infineon.com).
WARNINGS
Due to technical requirements products may contain dangerous substances. For information on the types in question
please contact your nearest Infineon Technologies office.
Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized
representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a
failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury.
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2015-11-11