TIGER ELECTRONIC CO.,LTD TO-220F Plastic-Encapsulate Diodes MBRF10200CT SCHOTTKY BARRIER RECTIFIER TO-220F FEATURES Schottky Barrier Chip Guard Ring Die Construction for Transient Protection Low Power Loss,High Efficiency High Surge Capability High Current Capability and Low Forward Voltage Drop For Use in Low Voltage, High Frequency Inverters,Free Wheeling, and Polarity Protection Applications 1. ANODE 2. CATHODE 3. ANODE MAXIMUM RATINGS ( Ta=25℃ unless otherwise noted ) Symbol Parameter Value Unit 200 V 140 V 10 A 120 A Power dissipation 2 W Thermal resistance from junction to ambient 50 ℃/W Tj Junction temperature 125 ℃ Tstg Storage temperature -55~+150 ℃ VRRM Peak repetitive reverse voltage VRWM Working peak reverse voltage VR DC blocking voltage VR(RMS) RMS reverse voltage Average rectified output current IO IFSM PD RΘJA Non-Repetitive peak forward surge current 8.3ms half sine wave ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions Reverse voltage V(BR) IR=0.1mA Reverse current IR VR=200V Min Typ Max 200 V 5 μA VF1 IF=5A 0.84 VF2* IF=10A 0.95 Ctot VR=4V,f=1MHz V Forward voltage Typical total capacitance Unit 300 pF *Pulse test A,Nov,2010