TGS MBRF10200CT To-220f plastic-encapsulate diode Datasheet

TIGER ELECTRONIC CO.,LTD
TO-220F Plastic-Encapsulate Diodes
MBRF10200CT
SCHOTTKY BARRIER RECTIFIER
TO-220F
FEATURES
 Schottky Barrier Chip
 Guard Ring Die Construction for Transient Protection
 Low Power Loss,High Efficiency
 High Surge Capability
 High Current Capability and Low Forward Voltage Drop
 For Use in Low Voltage, High Frequency Inverters,Free Wheeling,
and Polarity Protection Applications
1. ANODE
2. CATHODE
3. ANODE
MAXIMUM RATINGS ( Ta=25℃ unless otherwise noted )
Symbol
Parameter
Value
Unit
200
V
140
V
10
A
120
A
Power dissipation
2
W
Thermal resistance from junction to ambient
50
℃/W
Tj
Junction temperature
125
℃
Tstg
Storage temperature
-55~+150
℃
VRRM
Peak repetitive reverse voltage
VRWM
Working peak reverse voltage
VR
DC blocking voltage
VR(RMS)
RMS reverse voltage
Average rectified output current
IO
IFSM
PD
RΘJA
Non-Repetitive peak forward surge current
8.3ms half sine wave
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol
Test conditions
Reverse voltage
V(BR)
IR=0.1mA
Reverse current
IR
VR=200V
Min
Typ
Max
200
V
5
μA
VF1
IF=5A
0.84
VF2*
IF=10A
0.95
Ctot
VR=4V,f=1MHz
V
Forward voltage
Typical total capacitance
Unit
300
pF
*Pulse test
A,Nov,2010
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