AP20T15GI-HF
Halogen-Free Product
Advanced Power
Electronics Corp.
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Simple Drive Requirement
D
▼ Lower On-resistance
▼ Fast Switching Characteristic
▼ Halogen Free & RoHS Compliant Product
G
BVDSS
150V
RDS(ON)
70mΩ
ID
22.2A
S
Description
AP20T15 series are from Advanced Power innovated design and
silicon process technology to achieve the lowest possible onresistance and fast switching performance. It provides the designer
with an extreme efficient device for use in a wide range of power
applications.
The TO-220CFM package is widely preferred for all commercialindustrial through hole applications. The mold compound provides
a high isolation voltage capability and low thermal resistance
between the tab and the external heat-sink
G
D
TO-220CFM(I)
S
Absolute Maximum Ratings
Symbol
Parameter
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
ID@TC=25℃
ID@TC=100℃
Rating
Units
150
V
+20
V
3
22.2
A
3
14
A
60
A
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
1
IDM
Pulsed Drain Current
PD@TC=25℃
Total Power Dissipation
31.3
W
PD@TA=25℃
Total Power Dissipation
1.92
W
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Parameter
Value
Units
Rthj-c
Maximum Thermal Resistance, Junction-case
4
℃/W
Rthj-a
Maximum Thermal Resistance, Junction-ambient
65
℃/W
Data and specifications subject to change without notice
1
201309272
AP20T15GI-HF
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max. Units
BVDSS
Drain-Source Breakdown Voltage
VGS=0V, ID=250uA
150
-
-
V
RDS(ON)
Static Drain-Source On-Resistance2
VGS=10V, ID=15A
-
-
70
mΩ
VGS=4.5V, ID=10A
-
-
120
mΩ
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
1
-
3
V
gfs
Forward Transconductance
VDS=10V, ID=15A
-
21
-
S
IDSS
Drain-Source Leakage Current
VDS=120V, VGS=0V
-
-
25
uA
IGSS
Gate-Source Leakage
VGS=+20V, VDS=0V
-
-
+100
nA
Qg
Total Gate Charge
ID=15A
-
48
77
nC
Qgs
Gate-Source Charge
VDS=120V
-
7.5
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=10V
-
18
-
nC
td(on)
Turn-on Delay Time
VDS=75V
-
12
-
ns
tr
Rise Time
ID=15A
-
30
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω
-
33
-
ns
tf
Fall Time
VGS=10V
-
40
-
ns
Ciss
Input Capacitance
VGS=0V
-
2100 3360
pF
Coss
Output Capacitance
VDS=25V
-
125
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
100
-
pF
Rg
Gate Resistance
f=1.0MHz
-
1.7
3.4
Ω
Min.
Typ.
Source-Drain Diode
Symbol
Parameter
2
Test Conditions
Max. Units
VSD
Forward On Voltage
IS=15A, VGS=0V
-
-
1.3
V
trr
Reverse Recovery Time
IS=10A, VGS=0V
-
40
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/µs
-
80
-
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Ensure that the channel temperature does not exceed 150 oC
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP20T15GI-HF
60
30
T C = 25 o C
ID , Drain Current (A)
50
ID , Drain Current (A)
T C = 150 o C
10V
7.0V
6.0V
5.0V
40
30
20
V G = 4.0V
10V
7.0V
6.0V
5.0V
V G = 4.0V
20
10
10
0
0
0
4
8
12
16
0
20
Fig 1. Typical Output Characteristics
4
6
8
10
12
Fig 2. Typical Output Characteristics
90
3.2
I D =15A
V G =10V
I D =10A
o
Normalized RDS(ON)
T C =25 C
RDS(ON) (mΩ)
2
V DS , Drain-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
80
70
60
2.4
1.6
0.8
50
0.0
2
4
6
8
10
-50
0
50
100
150
o
V GS Gate-to-Source Voltage (V)
T j , Junction Temperature ( C)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
2.0
20
I D =250uA
1.6
12
T j =150 o C
Normalized VGS(th)
IS(A)
16
T j =25 o C
8
1.2
0.8
0.4
4
0.0
0
0
0.2
0.4
0.6
0.8
1
1.2
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.4
-50
0
50
100
150
o
T j , Junction Temperature ( C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP20T15GI-HF
f=1.0MHz
3200
12
10
2400
8
C iss
C (pF)
VGS , Gate to Source Voltage (V)
I D =15A
V DS =120V
6
1600
4
800
2
C oss
C rss
0
0
0
10
20
30
40
50
1
60
5
Fig 7. Gate Charge Characteristics
13
17
21
25
29
Fig 8. Typical Capacitance Characteristics
100
Normalized Thermal Response (Rthjc)
1
Operation in this area
limited by RDS(ON)
ID (A)
9
V DS ,Drain-to-Source Voltage (V)
Q G , Total Gate Charge (nC)
100us
10
1ms
1
10ms
100ms
o
T C =25 C
Single Pulse
DC
Duty factor=0.5
0.2
0.1
0.1
0.05
PDM
t
0.02
T
0.01
Duty factor = t/T
Peak Tj = PDM x Rthjc + T C
Single Pulse
0.01
0.1
0.1
1
10
100
1000
0.00001
0.0001
0.001
V DS , Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
0.01
0.1
1
10
t , Pulse Width (s)
Fig 10. Effective Transient Thermal Impedance
VG
VDS
90%
QG
10V
QGS
QGD
10%
VGS
td(on) tr
td(off) tf
Fig 11. Switching Time Waveform
Charge
Q
Fig 12. Gate Charge Waveform
4