PNP BD676-BD678-BD680-BD682 NPN BD675-BD677-BD679-BD681 SILICON DARLINGTON POWER TRANSISTORS The BD676-BD678-BD680-BD682 are PNP eptaxial-base transistors in monolithic Darlington circuit for audio and video applications. They are mounted in Jedec TO-126 plastic package. NPN complements are BD675-BD677-BD679-BD681 . ABSOLUTE MAXIMUM RATINGS Symbol Ratings -VCEO Collector-Emitter Voltage -VCBO Collector-Base Voltage -VEBO Emitter-Base Voltage -IC Collector Current -IB PT TJ TStg Base current (peak value) Total power Dissipation Junction Temperature Storage Temperature Value BD676 BD678 BD680 BD682 BD676 BD678 BD680 BD682 -IC -ICM -IBM @ Tmb = 25°C 45 60 80 100 45 60 80 100 5 4 6 0.1 40 150 -65 to +150 Unit V V V A A Watts °C °C THERMAL CHARACTERISTICS Symbol RthJ-mb RthJ-a Ratings Thermal Resistance, Junction to mouting base Thermal Resistance, Junction to ambient in free air COMSET SEMICONDUCTORS Value Unit 3.12 100 K/W K/W 1 PNP BD676-BD678-BD680-BD682 NPN BD675-BD677-BD679-BD681 ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol -ICBO Ratings Min Typ Test Condition(s) Collector cut-off current IE=0 , -VCB= -VCBOMAX=45 V IE=0 , -VCB= -VCBOMAX=60 V IE=0 , -VCB= -VCBOMAX=80 V IE=0 , -VCB= -VCBOMAX=100 V IE=0 , -VCB= -½VCBOMAX= 45V,Tj= 150°C IE=0 , -VCB= -½VCBOMAX= 60V,Tj= 150°C IE=0 , -VCB= -½VCBOMAX= 80V,Tj= 150°C IE=0 , -VCB= -½VCBOMAX= 100V,Tj= 150°C M Unit x BD676 BD678 BD680 BD682 - - 0,2 0,2 0,2 0,2 BD676 - - 1 BD678 - - 1 BD680 - - 1 BD682 - - 1 BD676 BD678 BD680 BD682 - 0,2 0,2 0,2 0,2 5 mA mA -ICEO Collector cut-off current IB=0 , -VCE= -½VCEOMAX=60 V -IEBO IC=0, -VEB=5 V -VCE(SAT) Emitter cut-offcurrent Collector-Emitter saturation Voltage - -IC=1.5 A, -IB=6 mA - - 2,5 V hFE DC Current Gain 750 10 - 2200 650 60 1,5 2,5 - V kHz V 0,8 - - A - 0,3 1,5 1.5 5 µs -VBE hfe fhfe VF -VCE=3 V, -IC=500 mA -VCE=3 V, -IC=1,5 A -VCE=3 V, -IC=4 A -VCE=3 V, -IC=1,5 A -VCE=3 V, -IC=1,5 A, f= 1 MHz -VCE=3 V, -IC=1,5 A IF=1,5 A -VCE=50 V, tP= 20ms,non rep., without heatsink Base-Emitter Voltage(1&2) Small signal current gain Ut-off frequency Diode forward voltage Second-breakdown -I(SB) collector current Turn-on time ton -Icon= 1,5A, -Ibon= Iboff= 6mA, Turn-off time toff 1. Measured under pulse conditions :tP <300µs, δ <2%. 2. VBE decreases by about 3,6 mV/K with increasing temperature. COMSET SEMICONDUCTORS 2 mA MECHANICAL DATA CASE TO-126 DIMENSIONS mm min A B C D E F G H L M N P Pin 1 : Pin 2 : Case : inches max 7.4 7.8 10.5 10.8 2.4 2.7 0.7 0.9 2.2 typ. 0.49 0.75 4.4 typ. 2.54 typ. 15.7 typ. 1.2 typ. 3.8 typ. 3.0 3.2 min max 0.295 0.307 0.413 0.425 0.094 0.106 0.027 0.035 0.087 typ. 0.019 0.029 0.173 typ. 0.100 typ. 0.618 typ. 0.047 typ. 0.149 typ. 0.118 0.126 Emitter Collector Base COMSET SEMICONDUCTORS 3