Comset BD682 Silicon darlington power transistor Datasheet

PNP BD676-BD678-BD680-BD682
NPN BD675-BD677-BD679-BD681
SILICON DARLINGTON POWER
TRANSISTORS
The BD676-BD678-BD680-BD682 are PNP eptaxial-base transistors in monolithic
Darlington circuit for audio and video applications.
They are mounted in Jedec TO-126 plastic package.
NPN complements are BD675-BD677-BD679-BD681 .
ABSOLUTE MAXIMUM RATINGS
Symbol
Ratings
-VCEO
Collector-Emitter Voltage
-VCBO
Collector-Base Voltage
-VEBO
Emitter-Base Voltage
-IC
Collector Current
-IB
PT
TJ
TStg
Base current (peak value)
Total power Dissipation
Junction Temperature
Storage Temperature
Value
BD676
BD678
BD680
BD682
BD676
BD678
BD680
BD682
-IC
-ICM
-IBM
@ Tmb = 25°C
45
60
80
100
45
60
80
100
5
4
6
0.1
40
150
-65 to +150
Unit
V
V
V
A
A
Watts
°C
°C
THERMAL CHARACTERISTICS
Symbol
RthJ-mb
RthJ-a
Ratings
Thermal Resistance, Junction to mouting base
Thermal Resistance, Junction to ambient in free air
COMSET SEMICONDUCTORS
Value
Unit
3.12
100
K/W
K/W
1
PNP BD676-BD678-BD680-BD682
NPN BD675-BD677-BD679-BD681
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
-ICBO
Ratings
Min Typ
Test Condition(s)
Collector cut-off current
IE=0 , -VCB= -VCBOMAX=45 V
IE=0 , -VCB= -VCBOMAX=60 V
IE=0 , -VCB= -VCBOMAX=80 V
IE=0 , -VCB= -VCBOMAX=100 V
IE=0 ,
-VCB=
-½VCBOMAX=
45V,Tj= 150°C
IE=0 ,
-VCB=
-½VCBOMAX=
60V,Tj= 150°C
IE=0 ,
-VCB=
-½VCBOMAX=
80V,Tj= 150°C
IE=0 ,
-VCB=
-½VCBOMAX=
100V,Tj= 150°C
M
Unit
x
BD676
BD678
BD680
BD682
-
-
0,2
0,2
0,2
0,2
BD676
-
-
1
BD678
-
-
1
BD680
-
-
1
BD682
-
-
1
BD676
BD678
BD680
BD682
-
0,2
0,2
0,2
0,2
5
mA
mA
-ICEO
Collector cut-off current
IB=0 , -VCE= -½VCEOMAX=60 V
-IEBO
IC=0, -VEB=5 V
-VCE(SAT)
Emitter cut-offcurrent
Collector-Emitter saturation
Voltage
-
-IC=1.5 A, -IB=6 mA
-
-
2,5
V
hFE
DC Current Gain
750
10
-
2200
650
60
1,5
2,5
-
V
kHz
V
0,8
-
-
A
-
0,3
1,5
1.5
5
µs
-VBE
hfe
fhfe
VF
-VCE=3 V, -IC=500 mA
-VCE=3 V, -IC=1,5 A
-VCE=3 V, -IC=4 A
-VCE=3 V, -IC=1,5 A
-VCE=3 V, -IC=1,5 A, f= 1 MHz
-VCE=3 V, -IC=1,5 A
IF=1,5 A
-VCE=50 V, tP= 20ms,non rep., without
heatsink
Base-Emitter Voltage(1&2)
Small signal current gain
Ut-off frequency
Diode forward voltage
Second-breakdown
-I(SB)
collector current
Turn-on time
ton
-Icon= 1,5A, -Ibon= Iboff= 6mA,
Turn-off time
toff
1. Measured under pulse conditions :tP <300µs, δ <2%.
2. VBE decreases by about 3,6 mV/K with increasing temperature.
COMSET SEMICONDUCTORS
2
mA
MECHANICAL DATA CASE TO-126
DIMENSIONS
mm
min
A
B
C
D
E
F
G
H
L
M
N
P
Pin 1 :
Pin 2 :
Case :
inches
max
7.4
7.8
10.5
10.8
2.4
2.7
0.7
0.9
2.2 typ.
0.49
0.75
4.4 typ.
2.54 typ.
15.7 typ.
1.2 typ.
3.8 typ.
3.0
3.2
min
max
0.295
0.307
0.413
0.425
0.094
0.106
0.027
0.035
0.087 typ.
0.019
0.029
0.173 typ.
0.100 typ.
0.618 typ.
0.047 typ.
0.149 typ.
0.118
0.126
Emitter
Collector
Base
COMSET SEMICONDUCTORS
3
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