AF4978N N-Channel Enhancement Mode Power MOSFET Features General Description - Low Gate Charge - Single Drive Requirement - Surface Mount Package - Pb Free Plating Product The advanced power MOSFET provides the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. Product Summary BVDSS (V) 60 RDS(ON) (mΩ) 100 ID (A) 11 The TO-252 package is universally preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. Pin Descriptions Pin Assignments (Front View) S 3 2 D 1 Pin Name Description S G D Source Gate Drain G Ordering information Feature F: MOSFET A X 4978N X X PN Package D: TO-252 Packing Blank : Tube or Bulk A : Tape & Reel Block Diagram D S G This datasheet contains new product information. Anachip Corp. reserves the rights to modify the product specification without notice. No liability is assumed as a result of the use of this product. No rights under any patent accompany the sale of the product. Rev. 1.0 Sep 6, 2005 1/5 AF4978N N-Channel Enhancement Mode Power MOSFET Absolute Maximum Ratings Symbol VDS VGS Parameter Rating 60 ±25 11 6.8 45 21 0.17 -55 to 150 -55 to 150 Drain-Source Voltage Gate-Source Voltage TC=25ºC TC=100ºC ID Continuous Drain Current, VGS=10V IDM Pulsed Drain Current (Note 1) Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range PD TSTG TJ TC=25ºC Units V V A A W W/ºC ºC ºC Thermal Data Symbol RθJC RθJA Parameter Thermal Resistance Junction-Case Thermal Resistance Junction- Ambient Maximum 6 110 Max. Max. Units ºC/W ºC/W Electrical Characteristics at TJ=25ºC unless otherwise specified Symbol Parameter BVDSS Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Static Drain-Source On-Resistance (Note 2) Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current (TJ=25oC) Drain-Source Leakage Current (TJ=150oC) Gate-Source Leakage Total Gate Charge (Note 2) Gate-Source Charge Gate-Drain (“Miller”) Charge Turn-On Delay Time (Note 2) Rise Time Turn-Off Delay Time Fall-Time Input Capacitance Output Capacitance Reverse Transfer Capacitance ∆BVDSS / ∆TJ RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Test Conditions Min. Typ. Max. Units 60 - - V - 0.04 - V/oC 1 - 7 100 125 3 - VDS=60V, VGS=0V - - 10 VDS=48V, VGS=0V - - 25 VGS=±25V ID=5A, VDS=48V, VGS=4.5V VDS=30V, ID=5A, RG=3.3Ω, VGS=10V RD=6Ω VGS=0V, VDS=25V, f=1.0MHz - 6 2 3 6 11 14 2 485 55 40 ±100 10 780 - Test Conditions IS=5A, VGS=0V IS=5A, VGS=0V, dl/dt=100A/µs Min. - Typ. 23 28 Max. 1.2 - VGS=0V, ID=250uA Reference to 25oC, ID=1mA VGS=10V, ID=5A VGS=4.5V, ID=4A VDS=VGS, ID=250uA VDS=10V, ID=5A mΩ V S uA nA nC ns pF Source-Drain Diode Symbol VSD trr Qrr Parameter Forward On Voltage (Note 2) Reverse Recovery Time Reverse Recovery Charge Unit V ns nC Note 1: Pulse width limited by Max. junction temperature. Note 2: Pulse width ≤ 300us, duty cycle ≤ 2%. Anachip Corp. www.anachip.com.tw Rev. 1.0 Sep 6, 2005 2/5 AF4978N N-Channel Enhancement Mode Power MOSFET Typical Performance Characteristics Fig 2. Typical Output Characteristics Fig 1. Typical Output Characteristics Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature Fig 5. Forward Characteristic of Reverse Diode Fig 6. Gate Threshold Voltage v.s. Junction Temperature Anachip Corp. www.anachip.com.tw Rev. 1.0 Sep 6, 2005 3/5 AF4978N N-Channel Enhancement Mode Power MOSFET Typical Performance Characteristics (Continued) Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics Fig 10. Effective Transient Thermal Impedance Fig 9. Maximum Safe Operating Area Fig 12. Gate Charge Waveform Fig 11. Switching Time Waveform Anachip Corp. www.anachip.com.tw Rev. 1.0 Sep 6, 2005 4/5 AF4978N N-Channel Enhancement Mode Power MOSFET Marking Information TO-252 ( Top View) Logo 4978N YYWWX Part Number YY : Year WW: Nth week X : Internal code ( Optional) Package Information Package Type: TO-252 F1 E1 E3 E2 D D1 F B1 e e C A3 A2 R: 0.127~0.381 (0.1mm) 1. All Dimensions Are in Millimeters. 2. Dimension Does Not Include Mold Protrusions. Symbol A2 A3 B1 D D1 F F1 E1 E2 E3 e C Dimensions In Millimeters Min. Nom. Max. 1.80 2.30 2.80 0.40 0.50 0.60 0.40 0.70 1.00 6.00 6.50 7.00 4.80 5.35 5.90 2.20 2.63 3.05 0.50 0.85 1.20 5.10 5.70 6.30 0.50 1.10 1.70 3.50 4.00 4.50 2.30 0.35 0.50 0.65 Anachip Corp. www.anachip.com.tw Rev. 1.0 Sep 6, 2005 5/5