Anachip AF4978N N-channel enhancement mode power mosfet Datasheet

AF4978N
N-Channel Enhancement Mode Power MOSFET
„ Features
„ General Description
- Low Gate Charge
- Single Drive Requirement
- Surface Mount Package
- Pb Free Plating Product
The advanced power MOSFET provides the designer
with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
„ Product Summary
BVDSS (V)
60
RDS(ON) (mΩ)
100
ID (A)
11
The TO-252 package is universally preferred for all
commercial-industrial surface mount applications and
suited for low voltage applications such as DC/DC
converters.
„ Pin Descriptions
„ Pin Assignments
(Front View)
S
3
2
D
1
Pin Name
Description
S
G
D
Source
Gate
Drain
G
„ Ordering information
Feature
F: MOSFET
A X
4978N X X
PN
Package
D: TO-252
Packing
Blank : Tube or Bulk
A : Tape & Reel
„ Block Diagram
D
S
G
This datasheet contains new product information. Anachip Corp. reserves the rights to modify the product specification without notice. No liability is assumed as a result of the use of
this product. No rights under any patent accompany the sale of the product.
Rev. 1.0 Sep 6, 2005
1/5
AF4978N
N-Channel Enhancement Mode Power MOSFET
„ Absolute Maximum Ratings
Symbol
VDS
VGS
Parameter
Rating
60
±25
11
6.8
45
21
0.17
-55 to 150
-55 to 150
Drain-Source Voltage
Gate-Source Voltage
TC=25ºC
TC=100ºC
ID
Continuous Drain Current, VGS=10V
IDM
Pulsed Drain Current (Note 1)
Total Power Dissipation
Linear Derating Factor
Storage Temperature Range
Operating Junction Temperature Range
PD
TSTG
TJ
TC=25ºC
Units
V
V
A
A
W
W/ºC
ºC
ºC
„ Thermal Data
Symbol
RθJC
RθJA
Parameter
Thermal Resistance Junction-Case
Thermal Resistance Junction- Ambient
Maximum
6
110
Max.
Max.
Units
ºC/W
ºC/W
„ Electrical Characteristics at TJ=25ºC unless otherwise specified
Symbol
Parameter
BVDSS
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Static Drain-Source
On-Resistance (Note 2)
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current
(TJ=25oC)
Drain-Source Leakage Current
(TJ=150oC)
Gate-Source Leakage
Total Gate Charge (Note 2)
Gate-Source Charge
Gate-Drain (“Miller”) Charge
Turn-On Delay Time (Note 2)
Rise Time
Turn-Off Delay Time
Fall-Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
∆BVDSS / ∆TJ
RDS(ON)
VGS(th)
gfs
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Test Conditions
Min.
Typ.
Max.
Units
60
-
-
V
-
0.04
-
V/oC
1
-
7
100
125
3
-
VDS=60V, VGS=0V
-
-
10
VDS=48V, VGS=0V
-
-
25
VGS=±25V
ID=5A,
VDS=48V,
VGS=4.5V
VDS=30V,
ID=5A,
RG=3.3Ω, VGS=10V
RD=6Ω
VGS=0V,
VDS=25V,
f=1.0MHz
-
6
2
3
6
11
14
2
485
55
40
±100
10
780
-
Test Conditions
IS=5A, VGS=0V
IS=5A, VGS=0V,
dl/dt=100A/µs
Min.
-
Typ.
23
28
Max.
1.2
-
VGS=0V, ID=250uA
Reference to 25oC,
ID=1mA
VGS=10V, ID=5A
VGS=4.5V, ID=4A
VDS=VGS, ID=250uA
VDS=10V, ID=5A
mΩ
V
S
uA
nA
nC
ns
pF
„ Source-Drain Diode
Symbol
VSD
trr
Qrr
Parameter
Forward On Voltage (Note 2)
Reverse Recovery Time
Reverse Recovery Charge
Unit
V
ns
nC
Note 1: Pulse width limited by Max. junction temperature.
Note 2: Pulse width ≤ 300us, duty cycle ≤ 2%.
Anachip Corp.
www.anachip.com.tw
Rev. 1.0 Sep 6, 2005
2/5
AF4978N
N-Channel Enhancement Mode Power MOSFET
„ Typical Performance Characteristics
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
Fig 5. Forward Characteristic of
Reverse Diode
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
Anachip Corp.
www.anachip.com.tw
Rev. 1.0 Sep 6, 2005
3/5
AF4978N
N-Channel Enhancement Mode Power MOSFET
„ Typical Performance Characteristics (Continued)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
Fig 10. Effective Transient Thermal Impedance
Fig 9. Maximum Safe Operating Area
Fig 12. Gate Charge Waveform
Fig 11. Switching Time Waveform
Anachip Corp.
www.anachip.com.tw
Rev. 1.0 Sep 6, 2005
4/5
AF4978N
N-Channel Enhancement Mode Power MOSFET
„ Marking Information
TO-252
( Top View)
Logo
4978N
YYWWX
Part Number
YY : Year
WW: Nth week
X
: Internal code ( Optional)
„ Package Information
Package Type: TO-252
F1
E1
E3
E2
D
D1
F
B1
e
e
C
A3
A2
R: 0.127~0.381
(0.1mm)
1. All Dimensions Are in Millimeters.
2. Dimension Does Not Include Mold Protrusions.
Symbol
A2
A3
B1
D
D1
F
F1
E1
E2
E3
e
C
Dimensions In Millimeters
Min.
Nom.
Max.
1.80
2.30
2.80
0.40
0.50
0.60
0.40
0.70
1.00
6.00
6.50
7.00
4.80
5.35
5.90
2.20
2.63
3.05
0.50
0.85
1.20
5.10
5.70
6.30
0.50
1.10
1.70
3.50
4.00
4.50
2.30
0.35
0.50
0.65
Anachip Corp.
www.anachip.com.tw
Rev. 1.0 Sep 6, 2005
5/5
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