Diode Semiconductor Korea Schottky Barrier Diode BAT54WS FEATURES Pb z z z Low turn-on voltage. Fast switching. Ultra-small surface mount package. z PN junction guard ring for transient and ESD protection. Lead-free APPLICATIONS z Schottky barrier detector and switching diodes. SOD-323 ORDERING INFORMATION Type No. Marking BAT54WS L9 Package Code SOD-323 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Parameter Symbol Limits Unit Peak Repetitive reverse voltage Working peak reverse voltage DC reverse voltage VRRM 30 V RMS Reverse Voltage VR(RMS) 21 V Average Rectified Output Current IO 100 mA Forward continuous Current IF 200 mA Repetitive peak Forward Current IFRM 300 mA IFSM 600 mA Power Dissipation Pd 200 mW Thermal resistance,junction to ambient air RθjA 625 ℃/W Junction temperature Tj 125 ℃ Storage temperature range Tstg -65-150 ℃ Forward Surge Current VRWM VR @t<1.0s ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified www.diode.kr Diode Semiconductor Korea Schottky Barrier Diode BAT54WS Parameter Symbol Conditions Min. Reverse Breakdown Voltage V(BR)R IR=100μA 30 VF1 IF=0.1mA 240 mV VF2 IF=1.0mA 320 mV VF3 IF=10mA 400 mV VF4 IF=30mA 500 mV VF5 IF=100mA 1000 mV Reverse leakage current IR VR=25V 2.0 μA Reverse recovery time trr IF=10mA,IR=10mA to 1mA RL=100Ω 5.0 ns Junction capacitance CJ VR=1.0V,f=1.0MHz 10 pF Forward voltage Typ. Max. Unit V TYPICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified www.diode.kr Diode Semiconductor Korea Schottky Barrier Diode BAT54WS PACKAGE OUTLINE Plastic surface mounted package SOD-323 SOD-323 K B C A D J Dim Min Max A 1.275 1.325 B 1.675 1.725 C E H 0.9 Typical D 0.25 0.35 E 0.27 0.37 H 0.02 0.1 J K 0.1 Typical 2.6 2.7 All Dimensions in mm SOLDERING FOOTPRINT Unit : mm PACKAGE INFORMATION Device Package Shipping BAT54WS SOD-323 3000/Tape&Reel www.diode.kr