R LL103A THUR LL103C SMALL SIGNAL SCHOTTKY DIODES S E M I C O N D U C T O R FEATURES For general purpose applications MiniMELF The LL103 series is a Metal-on-silicon junction Schottky barrier device which is protected by a PN junction guard ring. The low forward voltage drop and fast switching make it ideal for protection of MOS devices, steering, biasing, and coupling diodes for fast switching and low logic level applications. Other applications are click suppressions, efficient full wave bridges in telephone subsets, and blocking diodes in 0.063(1.6) 0.055(1.4) rechargeable low voltage battery systems. These diodes are also available in the DO-35 case with the type designation SD103A to SD103C. 0.019(0.48) 0.011(0.28) 0.142(3.6) 0.126(3.2) High temperature soldering guaranteed:260°C/10 seconds at terminals Component in accordance to RoHS 2011/65/EU Dimensions in inches and (millimeters) MECHANICAL DATA Case: MiniMELF glass case(SOD-80 ) Polarity: Color band denotes cathode end Weight: Approx. 0.05 gram ABSOLUTE RATINGS(LIMITING VALUES) Value 15 Units V V V mW A 125 °C -55 to+150 °C Symbols VRRM VRRM VRRM Ptot IFSM TJ TSTG LL103A LL103B LL103C Peak Reverse Voltage Power Dissipation (infinite Heat Sink) Maximum Single cycle surge 60Hz sine wave Junction temperature Storage Temperature Range 40 30 20 400 1) 1) Valid provided that electrodes are kept at ambient temperature ELECTRICAL CHARACTERISTICS (Ratings at 25°C ambient temperature unless otherwise specified) Symbols Min. Typ. Max. Unis IR IR IR 5 5 5 mA mA mA Forward voltage drop at IF=20mA IF=200mA VF VF 0.37 0.6 V V Junction Capacitance at VR=0V ,f=1MHz CJ 50 pF Reverse Recovery time at IF=IR=50mA,recover to 200mA recover to 0.1 IR trr 10 ns Leakage current at VR=30V VR=20V VR=10V LL103A LL103B LL103C JINAN JINGHENG ELECTRONICS CO., LTD. 3-1 HTTP://WWW.JINGHENGGROUP.COM RATINGS AND CHARACTERISTIC CURVES LL103A THRU LL103C Figure 1. Typical variation of forward current vs. Forward. Voltage for primary conduction through the schottky barrier Figure 2. Typical high current forward conduction curve tp=300ms,duty cycle=2% IF(mA) 10 A 3 5 Tj= 25°C 10 2 4 3 10 IF IF 1 10 -1 10 -2 2 1 0.5 0 0 1V 0.5 1 VF 1.5V VF Figure 3. Typical non repetitive forward surge current versus pulse width Figure 4. Typical variation of reverse current at various temperatures μA 50 10 3 125 C 40 100 C 10 2 75 C 30 10 50 C IR IF 20 25 C 1 10 0 10 -3 10 -2 10 -1 1 10 10 2 10 3 10 ms tp JINAN JINGHENG ELECTRONICS CO., LTD. -1 0 10 20 30 40 50V VR 3-2 HTTP://WWW.JINGHENGGROUP.COM RATINGS AND CHARACTERISTIC CURVES LL103A THRU LL103C Figure 5. Blocking deration versus temperature at various average forward currents V 50 40 100mA 30 200mA 400mA VR 20 10 200C 100 0 TA Figure 6. Typical capacitance versus reverse voltage pF 100 7 5 4 3 2 CJ 10 7 5 4 3 2 1 0 10 20 30 40 50V VR JINAN JINGHENG ELECTRONICS CO., LTD. 3-3 HTTP://WWW.JINGHENGGROUP.COM