APTGF50H60T1G Full - Bridge NPT IGBT Power Module 3 4 Q3 Q1 CR1 CR3 2 5 6 1 Q4 Q2 CR2 CR4 7 9 8 11 10 NTC 12 VCES = 600V IC = 50A* @ Tc = 80°C Application • Welding converters • Switched Mode Power Supplies • Uninterruptible Power Supplies • Motor control Features • Non Punch Through (NPT) Fast IGBT - Low voltage drop - Low tail current - Switching frequency up to 100 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - RBSOA and SCSOA rated • Very low stray inductance - Symmetrical design • Internal thermistor for temperature monitoring • High level of integration Benefits • Outstanding performance at high frequency operation • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Solderable terminals both for power and signal for easy PCB mounting • Low profile • Each leg can be easily paralleled to achieve a phase leg of twice the current capability • RoHS Compliant Pins 3/4 must be shorted together Absolute maximum ratings IC Continuous Collector Current ICM VGE PD Pulsed Collector Current Gate – Emitter Voltage Maximum Power Dissipation RBSOA TC = 25°C Max ratings 600 65* 50* 230 ±20 250 Tj = 125°C 100A @ 500V TC = 25°C TC = 80°C TC = 25°C Reverse Bias Safe Operating Area Unit V A August, 2007 Parameter Collector - Emitter Breakdown Voltage V W * Specification of IGBT device but output current must be limited to 40A to not exceed a delta of temperature greater than 35°C for the connectors. These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1–6 APTGF50H60T1G – Rev 0 Symbol VCES APTGF50H60T1G All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic ICES Zero Gate Voltage Collector Current VCE(sat) Collector Emitter Saturation Voltage VGE(th) IGES Gate Threshold Voltage Gate – Emitter Leakage Current Test Conditions Min Tj = 25°C Tj = 125°C T j = 25°C VGE =15V IC = 50A Tj = 125°C VGE = VCE , IC = 1mA VGE = 20V, VCE = 0V Typ VGE = 0V VCE = 600V 1.7 2.0 2.2 4 Max 250 500 2.45 Unit µA V 6 400 V nA Max Unit Dynamic Characteristics Symbol Cies Coes Cres Qg Qge Qgc Td(on) Tr Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Gate – Emitter Charge Gate – Collector Charge Turn-on Delay Time Rise Time Td(off) Turn-off Delay Time Tf Td(on) Tr Fall Time Turn-on Delay Time Rise Time Td(off) Turn-off Delay Time Tf Fall Time Eon Turn-on Switching Energy Eoff Turn-off Switching Energy Test Conditions VGE = 0V VCE = 25V f = 1MHz Min VGE = 15V VBus = 300V IC = 50A Inductive Switching (25°C) VGE = 15V VBus = 400V IC = 50A RG = 2.7Ω Typ 2200 323 200 166 20 100 40 9 pF nC ns 120 12 42 10 Inductive Switching (125°C) VGE = 15V VBus = 400V IC = 50A RG = 2.7Ω VGE = 15V Tj = 125°C VBus = 400V IC = 50A Tj = 125°C RG = 2.7Ω ns 130 21 0.5 mJ 1 Reverse diode ratings and characteristics IRM Min IF DC Forward Current VF Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge Max 600 Maximum Peak Repetitive Reverse Voltage Maximum Reverse Leakage Current Typ VR=600V IF = 30A IF = 60A IF = 30A IF = 30A VR = 400V di/dt =200A/µs www.microsemi.com V Tj = 25°C Tj = 125°C Tc = 80°C Unit 25 500 Tj = 125°C 30 1.8 2.2 1.5 Tj = 25°C 25 Tj = 125°C Tj = 25°C 160 35 Tj = 125°C 480 µA A 2.2 August, 2007 VRRM Test Conditions V ns nC 2–6 APTGF50H60T1G – Rev 0 Symbol Characteristic APTGF50H60T1G Thermal and package characteristics Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Min Junction to Case Thermal Resistance RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight Typ IGBT Diode To heatsink M4 2500 -40 -40 -40 2.5 Max 0.5 1.2 Unit °C/W V 150 125 100 4.7 80 °C N.m g Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information). Symbol Characteristic R25 Resistance @ 25°C B 25/85 T25 = 298.15 K RT = Min Typ 50 3952 Max Unit kΩ K R25 T: Thermistor temperature 1 1 RT: Thermistor value at T exp B25 / 85 − T25 T See application note 1904 - Mounting Instructions for SP1 Power Modules on www.microsemi.com www.microsemi.com 3–6 APTGF50H60T1G – Rev 0 August, 2007 SP1 Package outline (dimensions in mm) APTGF50H60T1G Typical Performance Curve Output characteristics (VGE=15V) Output Characteristics (VGE=10V) 150 250µs Pulse Test < 0.5% Duty cycle Ic, Collector Current (A) TJ=25°C 100 TJ=125°C 50 0 250µs Pulse Test < 0.5% Duty cycle 100 TJ=25°C 50 TJ=125°C 0 0 1 2 3 4 0 VCE, Collector to Emitter Voltage (V) 1 2 3 VCE, Collector to Emitter Voltage (V) Transfer Characteristics 250µs Pulse Test < 0.5% Duty cycle 125 100 75 50 TJ=125°C 25 TJ=25°C 0 1 2 3 4 5 6 7 8 9 VGE, Gate to Emitter Voltage (V) TJ = 25°C 250µs Pulse Test < 0.5% Duty cycle 7 6 Ic=100A 5 4 3 Ic=50A 2 1 Ic=25A 0 6 8 10 12 14 14 VCE=300V 12 VCE=480V 10 8 6 4 2 0 0 50 75 100 125 150 175 200 On state Voltage vs Junction Temperature 4 3.5 Ic=100A 3 Ic=50A 2.5 2 1.5 Ic=25A 250µs Pulse Test < 0.5% Duty cycle VGE = 15V 1 0.5 0 16 25 VGE, Gate to Emitter Voltage (V) Breakdown Voltage vs Junction Temp. 50 75 100 TJ, Junction Temperature (°C) 125 DC Collector Current vs Case Temperature 70 1.10 1.00 0.90 0.80 25 50 75 100 125 TJ, Junction Temperature (°C) 60 50 August, 2007 1.20 Ic, DC Collector Current (A) Collector to Emitter Breakdown Voltage (Normalized) 25 Gate Charge (nC) On state Voltage vs Gate to Emitter Volt. 8 VCE=120V IC = 50A TJ = 25°C 16 10 VCE, Collector to Emitter Voltage (V) 0 VCE, Collector to Emitter Voltage (V) Gate Charge 18 VGE, Gate to Emitter Voltage (V) Ic, Collector Current (A) 150 4 40 30 20 10 0 25 50 75 100 125 150 TC, Case Temperature (°C) www.microsemi.com 4–6 APTGF50H60T1G – Rev 0 Ic, Collector Current (A) 150 APTGF50H60T1G Turn-Off Delay Time vs Collector Current td(off), Turn-Off Delay Time (ns) VGE = 15V 50 40 Tj = 125°C VCE = 400V RG = 2.7Ω 30 20 0 25 50 75 100 125 175 150 VGE=15V, TJ=125°C 125 100 75 50 150 0 ICE, Collector to Emitter Current (A) Current Rise Time vs Collector Current VCE = 400V RG = 2.7Ω tf, Fall Time (ns) tr, Rise Time (ns) VGE=15V, TJ=125°C 125 150 40 TJ = 125°C 30 20 TJ = 25°C 0 0 0 25 50 75 100 125 ICE, Collector to Emitter Current (A) 0 150 Turn-On Energy Loss vs Collector Current TJ=125°C, VGE=15V VCE = 400V RG = 2.7Ω 1.5 Eoff, Turn-off Energy Loss (mJ) 2 Eon, Turn-On Energy Loss (mJ) 100 10 10 1 0.5 0 0 25 50 75 100 125 2.5 25 50 75 100 125 ICE, Collector to Emitter Current (A) 150 Turn-Off Energy Loss vs Collector Current VCE = 400V VGE = 15V RG = 2.7Ω 2 TJ = 125°C 1.5 1 0.5 0 150 0 ICE, Collector to Emitter Current (A) 25 50 75 100 125 150 ICE, Collector to Emitter Current (A) Switching Energy Losses vs Gate Resistance Reverse Bias Safe Operating Area 3 120 Eon, 50A 2 1.5 Eoff, 50A 1 0.5 100 80 60 August, 2007 VCE = 400V VGE = 15V TJ= 125°C 2.5 IC, Collector Current (A) Switching Energy Losses (mJ) 75 VCE = 400V, VGE = 15V, RG = 2.7Ω 50 40 20 50 Current Fall Time vs Collector Current 60 30 25 ICE, Collector to Emitter Current (A) 60 50 VGE=15V, TJ=25°C VCE = 400V RG = 2.7Ω 40 20 Eon, 50A 0 0 0 5 10 15 20 Gate Resistance (Ohms) 25 0 200 400 600 VCE, Collector to Emitter Voltage (V) www.microsemi.com 5–6 APTGF50H60T1G – Rev 0 td(on), Turn-On Delay Time (ns) Turn-On Delay Time vs Collector Current 60 APTGF50H60T1G Capacitance vs Collector to Emitter Voltage Operating Frequency vs Collector Current Fmax, Operating Frequency (kHz) C, Capacitance (pF) 10000 Cies 1000 Coes Cres 100 0 10 20 30 40 50 240 VCE = 400V D = 50% RG = 2.7Ω TJ = 125°C TC= 75°C 200 160 120 80 ZCS ZVS hard switching 40 0 0 VCE, Collector to Emitter Voltage (V) 20 40 60 80 100 IC, Collector Current (A) Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.9 0.4 0.7 0.3 0.5 0.2 0.3 0.1 0.1 0.05 0 0.00001 Single Pulse 0.0001 0.001 0.01 0.1 Rectangular Pulse Duration (Seconds) 1 10 August, 2007 0.5 Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. www.microsemi.com 6–6 APTGF50H60T1G – Rev 0 Thermal Impedance (°C/W) 0.6