IRFZ24N
TO-220AB
l
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Advanced Process Technology
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
Fully Avalanche Rated
D
VDSS = 55V
Description
The TO-220 package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 watts. The low thermal resistance
and low package cost of the TO-220 contribute to its wide
acceptance throughout the industry.
RDS(on) = 0.07Ω
G
ID = 17A
S
Absolute Maximum Ratings
Parameter
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Max.
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw.
Units
17
12
68
45
0.30
±20
71
10
4.5
5.0
-55 to + 175
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
300 (1.6mm from case)
10 lbf•in (1.1N•m)
Thermal Resistance
Parameter
RθJC
RθCS
RθJA
2014-8-9
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
1
Min.
Typ.
Max.
Units
––––
––––
––––
––––
0.50
––––
3.3
––––
62
°C/W
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IRFZ24N
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
RDS(on)
VGS(th)
gfs
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Min.
55
–––
–––
2.0
4.5
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
IDSS
Drain-to-Source Leakage Current
LD
Internal Drain Inductance
–––
LS
Internal Source Inductance
–––
–––
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
–––
–––
–––
V(BR)DSS
∆V(BR)DSS/∆TJ
IGSS
Typ.
–––
0.052
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
4.9
34
19
27
Max. Units
Conditions
–––
V
VGS = 0V, ID = 250µA
––– V/°C Reference to 25°C, ID = 1mA
0.07
Ω
VGS = 10V, ID = 10A
4.0
V
VDS = VGS, ID = 250µA
–––
S
VDS = 25V, ID = 10A
25
VDS = 55V, VGS = 0V
µA
250
VDS = 44V, VGS = 0V, TJ = 150°C
100
VGS = 20V
nA
-100
VGS = -20V
20
ID = 10A
5.3
nC
VDS = 44V
7.6
VGS = 10V, See Fig. 6 and 13
–––
VDD = 28V
–––
ID = 10A
ns
–––
RG = 24Ω
–––
RD = 2.6Ω, See Fig. 10
Between lead,
4.5 –––
6mm (0.25in.)
nH
from package
–––
7.5 –––
and center of die contact
370 –––
VGS = 0V
140 –––
pF
VDS = 25V
65 –––
ƒ = 1.0MHz, See Fig. 5
D
G
S
Source-Drain Ratings and Characteristics
IS
ISM
VSD
trr
Q rr
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Min. Typ. Max. Units
–––
–––
17
A
–––
–––
68
–––
–––
–––
–––
56
120
1.3
83
180
V
ns
nC
Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
TJ = 25°C, IS = 10A, VGS = 0V
TJ = 25°C, IF = 10A
di/dt = 100A/µs
D
G
S
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
VDD = 25V, starting TJ = 25°C, L = 1.0mH
ISD ≤ 10A, di/dt ≤ 280A/µs, VDD ≤ V(BR)DSS,
TJ ≤ 175°C
Pulse width ≤ 300µs; duty cycle ≤ 2%.
RG = 25Ω, IAS = 10A. (See Figure 12)
2014-8-9
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IRFZ24N
100
100
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
TOP
I , D rain-to-S ource C urrent (A )
D
I , D rain-to-S ource C urrent (A )
D
TOP
10
4.5V
20 µ s P U LS E W ID TH
TC = 2 5°C
1
0.1
1
10
A
10
4 .5V
2 0µ s P U L S E W ID T H
T C = 17 5°C
1
100
0.1
1
V D S , D rain-to-S ourc e V oltage (V )
Fig 2. Typical Output Characteristics,
TJ = 175oC
3.0
R D S (on) , Drain-to-S ource O n Resistance
(N orm alized)
I D , D rain-to-So urce C urren t (A )
100
TJ = 2 5 °C
T J = 1 7 5 °C
10
V DS = 2 5V
2 0µ s P U L S E W ID TH
4
5
6
7
8
9
10
I D = 1 7A
2.5
2.0
1.5
1.0
0.5
V G S = 10 V
0.0
A
-60
-40
-20
0
20
40
60
80
Fig 4. Normalized On-Resistance
Vs. Temperature
Fig 3. Typical Transfer Characteristics
3
A
100 120 140 160 180
T J , Junction T em perature (°C )
V G S , G ate-to -So urce Voltag e (V)
2014-8-9
A
100
V DS , D rain-to-S ource V oltage (V )
Fig 1. Typical Output Characteristics,
TJ = 25oC
1
10
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IRFZ24N
V GS
C is s
C rs s
C o ss
C , Capacitance (pF)
600
500
C iss
400
C oss
=
=
=
=
20
0V ,
f = 1M H z
C g s + C g d , Cd s S H O R T E D
C gd
C d s + C gd
V G S , G ate-to-S ource V oltage (V )
700
12
C rss
100
0
10
8
4
FO R TE S T C IR C U IT
S E E FIG U R E 1 3
0
A
1
100
0
4
8
12
16
A
20
V D S , D rain-to-S ourc e V oltage (V )
Q G , T otal G ate C harge (nC )
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
1000
100
O P E R A TIO N IN TH IS A R E A L IM ITE D
B Y R D S (o n)
I D , Drain C urrent (A )
I S D , Reverse D rain C urrent (A)
V D S = 44 V
V D S = 28 V
16
300
200
I D = 10 A
T J = 1 75 °C
TJ = 25 °C
10
V G S = 0V
1
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
A
10µ s
10
100µ s
1m s
T C = 25 °C
T J = 17 5°C
S ing le P u lse
1
1
2.0
10m s
10
100
V D S , D rain-to-S ource V oltage (V )
V S D , S ourc e-to-D rain V oltage (V )
Fig 8. Maximum Safe Operating Area
Fig 7. Typical Source-Drain Diode
Forward Voltage
2014-8-9
100
4
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A
IRFZ24N
RD
VDS
20
VGS
D.U.T.
RG
+
I D , D rain C u rren t (A m ps )
16
- VDD
10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
12
Fig 10a. Switching Time Test Circuit
8
VDS
90%
4
A
0
25
50
75
100
125
150
175
10%
VGS
TC , C ase T em perature (°C )
td(on)
Fig 9. Maximum Drain Current Vs.
Case Temperature
tr
t d(off)
tf
Fig 10b. Switching Time Waveforms
T h erm a l R e s p o n s e (Z th JC )
10
D = 0.5 0
1
0 .2 0
0 .1 0
0.0 5
0.1
PD M
0.02
0.01
t
S IN G L E P U L S E
(T H E R M A L R E S P O N S E )
t2
N o te s :
1 . D u ty f ac to r D = t
0.01
0.00001
1
1
/t
2
2 . P e a k T J = P D M x Z th J C + T C
0.0001
0.001
0.01
0.1
A
1
t 1 , R ectang ular P ulse D uration (sec)
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IRFZ24N
L
VDS
E A S , S ingle P ulse A valanche E nergy (m J)
140
D.U.T.
RG
+
V
- DD
IAS
10 V
tp
0.01Ω
Fig 12a. Unclamped Inductive Test Circuit
V(BR)DSS
tp
VDD
TO P
120
B O TTO M
100
80
60
40
20
0
V D D = 25 V
25
VDS
ID
4.2 A
7.2A
1 0A
50
A
75
100
125
150
175
S tarting T J , J unc tion T em perature (°C )
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
IAS
Fig 12b. Unclamped Inductive Waveforms
Current Regulator
Same Type as D.U.T.
50KΩ
QG
12V
.2µF
.3µF
10 V
QGS
QGD
D.U.T.
+
V
- DS
VGS
VG
3mA
IG
Charge
ID
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
Fig 13a. Basic Gate Charge Waveform
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IRFZ24N
Peak Diode Recovery dv/dt Test Circuit
+
D.U.T
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
+
-
-
+
•
•
•
•
RG
dv/dt controlled by RG
Driver same type as D.U.T.
ISD controlled by Duty Factor "D"
D.U.T. - Device Under Test
Driver Gate Drive
P.W.
D=
Period
+
-
VDD
P.W.
Period
VGS=10V
*
D.U.T. ISD Waveform
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
Re-Applied
Voltage
Body Diode
VDD
Forward Drop
Inductor Curent
ISD
Ripple ≤ 5%
* VGS = 5V for Logic Level Devices
2014-8-9
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IRFZ24N
Package Outline
TO-220AB
Dimensions are shown in millimeters (inches)
2.87 (.11 3)
2.62 (.10 3)
10 .54 (.4 15)
10 .29 (.4 05)
-B -
3 .7 8 (.149 )
3 .5 4 (.139 )
4.69 ( .18 5 )
4.20 ( .16 5 )
-A -
1 .32 (.05 2)
1 .22 (.04 8)
6.47 (.25 5)
6.10 (.24 0)
4
1 5.24 (.60 0)
1 4.84 (.58 4)
1.15 (.04 5)
M IN
1
2
1 4.09 (.55 5)
1 3.47 (.53 0)
4.06 (.16 0)
3.55 (.14 0)
3X
3X
L E A D A S S IG NM E NT S
1 - GATE
2 - D R A IN
3 - S O U RC E
4 - D R A IN
3
1 .4 0 (.0 55 )
1 .1 5 (.0 45 )
0.93 (.03 7)
0.69 (.02 7)
0 .3 6 (.01 4)
3X
M
B A M
0.55 (.02 2)
0.46 (.01 8)
2 .92 (.11 5)
2 .64 (.10 4)
2.54 (.10 0)
2X
N O TE S :
1 D IM E N S IO N IN G & TO L E R A N C ING P E R A N S I Y 1 4.5M , 1 9 82.
2 C O N TR O L LIN G D IM E N S IO N : IN C H
3 O U T LIN E C O N F O R M S TO JE D E C O U T LIN E TO -2 20 -A B .
4 H E A TS IN K & LE A D M E A S U R E M E N T S D O N O T IN C LU DE B U R R S .
Part Marking Information
TO-220AB
E X A M P L E : TH IS IS A N IR F1 0 1 0
W IT H A S S E M B L Y
LOT C ODE 9B1M
A
IN TE R N A TIO N A L
R E C TIF IE R
LOGO
ASSEMBLY
LOT CO DE
2014-8-9
8
PART NU MBER
IR F 10 1 0
9246
9B
1M
D A TE C O D E
(Y Y W W )
YY = YEAR
W W = W EEK
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