MMBT4401K PNP Epitaxial Silicon Transistor Switching Transistor Marking 3 2XK 2 SOT-23 1 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings Symbol Ta = 25°C unless otherwise noted Value Units VCBO Collector-Base Voltage Parameter 60 V VCEO Collector-Emitter Voltage 40 V VEBO Emitter-Base Voltage 6 V IC Collector Current 600 mA PC Collector Dissipation 350 mW TSTG Storage Temperature 150 °C Electrical Characteristics Ta=25°C unless otherwise noted Symbol Parameter Test Condition Min. Max. Units BVCBO Collector-Base Breakdown Voltage IC = 100µA, IE = 0 60 V V BVCEO Collector-Emitter Breakdown Voltage * IC = 1.0mA, IB = 0 40 BVEBO Emitter-Base Breakdown Voltage IE = 100µA, IC = 0 6 IBEV Base Cut-off Current VCE = 35V, VEB = 0.4V ICEX Collector Cut-off Current VCE = 35V, VEB = 0.4V hFE DC Current Gain * VCE = 1V, IC = 0.1mA VCE = 1V, IC = 1mA VCE = 1V, IC = 10mA VCE = 1V, IC = 150mA VCE = 2V, IC = 500mA 20 40 80 100 40 V 100 nA 100 nA 300 VCE (sat) Collector-Emitter Saturation Voltage * IC = 150mA, IB = 15mA IC = 500mA, IB = 50mA VBE (sat) Base-Emitter Saturation Voltage * I C= 150mA, IB = 15mA IC = 500mA, IB = 50mA 0.75 fT Current Gain Bandwidth Product IC = 20mA, VCE = 10V, f = 100MHz 250 Cob Output Capacitance VCB=5V, IE=0, f=100KHz 6.5 pF tON Turn On Time VCC = 30V, VBE = 2V IC = 150mA, IB1 = 15mA 35 ns tOFF Turn Off Time VCC = 30V, IC = 150mA IB1 = IB2 = 15mA 255 ns 0.4 0.75 V V 0.95 1.2 V V MHz * Pulse Test: Pulse Width≤300µs, Duty Cycle≤2% ©2005 Fairchild Semiconductor Corporation MMBT4401K Rev. A 1 www.fairchildsemi.com MMBT4401K PNP Epitaxial Silicon Transistor February 2005 Figure 2. Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage VBE(sat), VCE(sat)[V], SATURATION VOLTAGE Figure 1. DC current Gain hFE, DC CURRENT GAIN 1000 VCE = 1V 100 10 1 10 100 10 IC = 10 IB VBE(sat) 1 0.1 VCE(sat) 0.01 1 1000 10 100 1000 IC[mA], COLLECTOR CURRENT IC[mA], COLLECTOR CURRENT Figure 3. Collector-Base Capacitance Figure 4. Current Gain Bandwidth Product fT[MHz], CURRENT GAIN BANDWIDTH PRODUCT 10000 IE = 0 f = 100KHz Ccb [pF], CAPACITANCE 10 1 1 10 100 100 10 1 VCB [V], COLLECTOR-BASE VOLTAGE 10 100 IC[mA], COLLECTOR CURRENT 2 MMBT4401K Rev. A VCE = 10V 1000 www.fairchildsemi.com MMBT4401K PNP Epitaxial Silicon Transistor Typical Performance Characteristics MMBT4401K PNP Epitaxial Silicon Transistor Mechanical Dimensions ±0.10 ±0.10 2.40 0.40 ±0.03 1.30 0.45~0.60 0.20 MIN SOT-23 0.03~0.10 0.38 REF 0.40 ±0.03 +0.05 0.12 –0.023 0.96~1.14 0.97REF 2.90 ±0.10 0.95 ±0.03 0.95 ±0.03 1.90 ±0.03 0.508REF Dimensions in Millimeters 3 MMBT4401K Rev. A www.fairchildsemi.com The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ ActiveArray™ Bottomless™ CoolFET™ CROSSVOLT™ DOME™ EcoSPARK™ E2CMOS™ EnSigna™ FACT™ FACT Quiet Series™ FAST® FASTr™ FPS™ FRFET™ GlobalOptoisolator™ GTO™ HiSeC™ I2C™ i-Lo™ ImpliedDisconnect™ Across the board. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I15 4 MMBT4401K Rev. A www.fairchildsemi.com MMBT4401K PNP Epitaxial Silicon Transistor TRADEMARKS