NJSEMI BT136-600F General description Datasheet

<SE.mi-Condu.ctoi. LPioaucti, Una.
TELEPHONE: (973) 376-2922
(212) 227-6005
FAX: (973) 376-8960
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
Triacs
BT136 series
GENERAL DESCRIPTION
Glass passivated triacs in a plastic
envelope, intended for use in
applications
requiring
high
bidirectional transient and blocking
voltage capability and high thermal
cycling
performance.
Typical
applications include motor control,
industrial and domestic lighting,
heating and static switching.
PINNING - TO220AB
SYMBOL
PARAMETER
MAX.
MAX. MAX. UNIT
•DRM
BT136BT136BT136Repetitive peak off-state
voltages
RMS on-state current
Non-repetitive peak on-state
current
500
500F
500G
500
600
800
600F 800F
600G 800G
600
800
'r(RMS)
'TSM
PIN CONFIGURATION
4
25
4
25
4
25
MAX.
-600
6001
-800
800
V
A
A
SYMBOL
DESCRIPTION
PIN
1
main terminal 1
2
main terminal 2
3
gate
tab
QUICK REFERENCE DATA
main terminal 2
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL
"DRM
M(RMS)
'TSM
I2t
dlT/dt
'GM
VGM
p
~GM
PG(AV)
' stq
Ti
PARAMETER
CONDITIONS
Repetitive peak off-state
voltages
RMS on-state current
Non-repetitive peak
on-state current
I2t for fusing
Repetitive rate of rise of
on-state current after
triggering
Peak gate current
Peak gate voltage
Peak gate power
Average gate power
Storage temperature
Operating junction
temperature
MIN.
-
full sine wave; Tmb < 107 °C
full sine wave; T; = 25 °C prior to
surge
t - 20 ms
t= 16.7ms
t = 10ms
ITM = 6 A; I0 = 0.2 A;
dlG/dt = 0.2 A/us
T2+G+
T2+GT2-GT2-G+
over any 20 ms period
-500
5001
UNIT
-
4
A
_
-
25
27
3.1
A
A
A2s
-40
-
50
50
50
10
2
5
5
0.5
150
125
A/us
A/us
A/us
A/us
A
V
W
W
°C
°C
VI Semi-C ondutlors reserves the right in change tot conditions. paranKter limits ;ind package dimensions \vithotil notice
Information furnished by NJ Scmi-C unductors i» believed to he holh accurate and reliable M the time of going to press. However VI
Scini-C imdiiciort .iiMiiiKs ihi rcsptnuibility for uny errors or ninivsiiins Jiituvcred in its use NJ Seini-CoinJuih<rs <:n<.'iiur:iaes
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V
.
Triacs
BT136 series
THERMAL RESISTANCES
SYMBOL
p
^th j-mb
Rth j-a
PARAMETER
MIN.
CONDITIONS
Thermal resistance
full cycle
junction to mounting base half cycle
Thermal resistance
in free air
junction to ambient
-
TYP.
MAX.
UNIT
3.0
3.7
K/W
K/W
KM
60
STATIC CHARACTERISTICS
T, = 25 °C unless otherwise stated
SYMBOL PARAMETER
IOT
Gate trigger current
IL
Latching current
IH
Holding current
VT
VGT
On-state voltage
Gate trigger voltage
ID
Off-state leakage current
CONDITIONS
MIN.
BT136V D = 12V; IT = 0.1 A
T2+G+
T2+GT2-GT2-G+
V D = 1 2 V ; IGT = 0.1 A
T2+G+
T2+GT2-GT2-G+
V D = 1 2 V ; IGT = 0.1 A
IT = 5 A
VD = 12V; IT = 0.1 A
VD = 400V; IT = 0.1 A;
T,= 125°C
TYP.
MAX.
...F
UNIT
...G
.
5
8
11
30
35
35
35
70
25
25
25
70
50
50
50
100
mA
mA
mA
mA
.
.
.
-
7
16
5
7
5
20
30
20
30
15
20
30
20
30
15
30
45
30
45
30
mA
mA
mA
mA
mA
1.70
0.25
1.4
0.7
0.4
1.5
-
V
V
V
-
0.1
0.5
mA
MIN.
TYP.
MAX.
UNIT
T^rr'
DYNAMIC CHARACTERISTICS
Ti - 25 °C unless otherwise stated
SYMBOL PARAMETER
dVD/dt
dVcom/dt
tgt
CONDITIONS
BT136-
Critical rate of rise of
off-state voltage
Critical rate of change of
commutating voltage
Gate controlled turn-on
time
"DM = " ' "> VDRM(max)!
Tj = 125 °C; exponential
waveform; gate open
circuit
VDM = 400 V; T; = 95 'C;
I
100
...F
50
...G
200
250
-
V/^is
-
-
10
50
-
V/^s
-
-
-
2
-
- 4 A-
'T(RMS)
H "'
dlcom/dt= 1.8
A/ms; gate
open circuit
'TM = 6 A; VD = VDRM/max>;
IG = 0.1 A;dl G /dt = 5A/ns
^
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