Zetex BCV27 Sot23 npn silicon planar darlington transistor Datasheet

BCV27 IS OBSOLETE PLEASE USE MMBT6427
BCV47 IS CURRENTLY ACTIVE
BCV27
BCV47
SOT23 NPN SILICON PLANAR
DARLINGTON TRANSISTORS
ISSUE 3 – SEPTEMBER 1995
✪
FEATURES
* High VCEO
* Low saturation voltage
COMPLEMENTARY TYPES – BCV27 – BCV28
BCV47 – BCV48
E
C
B
PARTMARKING DETAILS –
BCV27 – ZFF
BCV47 – ZFG
SOT23
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
BCV27
BCV47
UNIT
Collector-Base Voltage
VCBO
40
80
V
Collector-Emitter Voltage
VCEO
30
60
V
Emitter-Base Voltage
VEBO
10
V
Peak Pulse Current
ICM
800
mA
Continuous Collector Current
IC
500
mA
Base Current
IB
100
mA
Power Dissipation at Tamb=25°C
Ptot
330
mW
Operating and Storage Temperature Range
Tj:Tstg
-55 to +150
°C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER
SYMBOL
Collector-Base
Breakdown Voltage
Collector-Emitter
Breakdown Voltage
Emitter-Base
Breakdown Voltage
Collector Cut-Off
Current
Emitter Base
Cut-Off Current
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
Static Forward Current
Transfer Ratio
BCV47
MIN. MAX.
80
UNIT
CONDITIONS.
V(BR)CBO
BCV27
MIN. MAX.
40
V
IC=100µA
V(BR)CEO
30
60
V
IC=10mA*
V(BR)EBO
10
10
V
IE=10µA
VCB = 30V
VCB = 60V
VCB=30V,Tamb =150oC
VCB=60V,Tamb =150oC
VEB=4V
IEBO
100
10
100
nA
nA
µA
µA
nA
VCE(sat)
1.0
1.0
V
IC=100mA,IB=0.1mA*
VBE(sat)
1.5
1.5
V
IC=100mA,IB=0.1mA*
2K
4K
10K
2K
170 Typical
MHz
3.5 Typical
pF
ICBO
100
10
Transition Frequency
fT
4K
10K
20K
4K
170 Typical
Output Capacitance
Cobo
3.5 Typical
hFE
100
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2%
† Periodic Sample Test Only.
For typical graphs see FMMT38A datasheet
3 - 22
IC=100µA, VCE=1V†
IC=10mA, VCE=5V*
IC=100mA, VCE=5V*
IC=500mA, VCE=5V*
IC=50mA, VCE=5V
f = 20MHz
VCB=10V, f=1MHz
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