APTM50AM24SG Phase leg Series & parallel diodes MOSFET Power Module VDSS = 500V RDSon = 24mΩ typ @ Tj = 25°C ID = 150A @ Tc = 25°C Application • Motor control • Switched Mode Power Supplies • Uninterruptible Power Supplies VBUS Q1 Features G1 OUT • S1 Q2 G2 0/VBUS • • • VBUS 0/VBUS Benefits OUT S1 • • • • • S2 G2 Outstanding performance at high frequency operation Direct mounting to heatsink (isolated package) Low junction to case thermal resistance Low profile RoHS Compliant Absolute maximum ratings Symbol VDSS ID IDM VGS RDSon PD IAR EAR EAS Parameter Drain - Source Breakdown Voltage Tc = 25°C Tc = 80°C Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25°C Max ratings 500 150 110 600 ±30 28 1250 24 30 1300 Unit V A V mΩ W A July, 2006 G1 mJ These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1–6 APTM50AM24SG – Rev 2 S2 Power MOS 7® MOSFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Fast intrinsic reverse diode - Avalanche energy rated - Very rugged Kelvin source for easy drive Very low stray inductance - Symmetrical design - M5 power connectors High level of integration APTM50AM24SG All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics RDS(on) VGS(th) IGSS Zero Gate Voltage Drain Current Drain – Source on Resistance Gate Threshold Voltage Gate – Source Leakage Current Dynamic Characteristics Symbol Ciss Coss Crss Qg Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Qgs Gate – Source Charge Qgd Gate – Drain Charge Td(on) Tr Td(off) Turn-on Delay Time Rise Time Turn-off Delay Time Tf Fall Time Eon Turn-on Switching Energy Eoff Turn-off Switching Energy Eon Turn-on Switching Energy Eoff Turn-off Switching Energy VGS = 0V,VDS = 400V Tj = 125°C VGS = 10V, ID = 75A VGS = VDS, ID = 6mA VGS = ±30 V, VDS = 0V Test Conditions VGS = 0V VDS = 25V f = 1MHz IRM IF VF Maximum Reverse Leakage Current trr Reverse Recovery Time Qrr Reverse Recovery Charge Min IF = 120A IF = 240A IF = 120A IF = 120A VR = 133V di/dt = 400A/µs www.microsemi.com Typ 19.6 4.2 0.3 434 Max 500 3 28 5 ±500 Unit µA mA mΩ V nA Max Unit nF nC 120 216 Test Conditions DC Forward Current Diode Forward Voltage 24 Inductive switching @ 125°C VGS = 15V VBus = 333V ID = 150A R G = 0.8Ω Inductive switching @ 25°C VGS = 15V, VBus = 333V ID = 150A, R G = 0.8Ω Inductive switching @ 125°C VGS = 15V, VBus = 333V ID = 150A, R G = 0.8Ω VR=200V Typ 3 VGS = 10V VBus = 250V ID = 150A Series diode ratings and characteristics Symbol Characteristic VRRM Maximum Repetitive Reverse Voltage Min T j = 25°C 10 17 50 41 1.9 mJ 1.5 3.3 mJ 1.7 Min 200 Tj = 25°C Tj = 125°C Tc = 85°C ns Typ Max 350 600 Tj = 125°C 120 1.1 1.4 0.9 Tj = 25°C 31 Tj = 125°C 60 Tj = 25°C 120 Tj = 125°C 500 Unit V µA A 1.15 V ns July, 2006 IDSS Test Conditions VGS = 0V,VDS = 500V nC 2–6 APTM50AM24SG – Rev 2 Symbol Characteristic APTM50AM24SG Parallel diode ratings and characteristics Symbol Characteristic VRRM Maximum Repetitive Reverse Voltage IRM Maximum Reverse Leakage Current IF DC Forward Current VF Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge Test Conditions Min 600 Tj = 25°C Tj = 125°C Tc = 70°C VR=600V IF = 120A IF = 240A IF = 120A Symbol Characteristic Min Transistor Diodes RthJC Junction to Case Thermal Resistance VISOL TJ TSTG TC RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz Operating junction temperature range Storage Temperature Range Operating Case Temperature Torque Mounting torque Wt Package Weight 120 1.6 1.9 1.4 130 170 440 1840 Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C Thermal and package characteristics To heatsink For terminals M6 M5 Max 350 600 Tj = 125°C IF = 120A VR = 400V di/dt = 400A/µs Typ 2500 -40 -40 -40 3 2 Typ Unit V µA A 1.8 V ns nC Max 0.10 0.46 Unit °C/W V 150 125 100 5 3.5 280 °C N.m g See application note APT0601 - Mounting Instructions for SP6 Power Modules on www.microsemi.com www.microsemi.com 3–6 APTM50AM24SG – Rev 2 July, 2006 SP6 Package outline (dimensions in mm) APTM50AM24SG Typical Performance Curve Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.1 0.9 0.08 0.7 0.06 0.5 0.04 0.3 0.1 0.02 Single Pulse 0.05 0 0.00001 0.0001 0.001 0.01 0.1 rectangular Pulse Duration (Seconds) Low Voltage Output Characteristics Transfert Characteristics 8V V GS=10&15V 480 7V 360 6.5V 240 6V 120 VDS > ID(on)xR DS(on)MAX 250µs pulse test @ < 0.5 duty cycle 420 7.5V I D, Drain Current (A) 5.5V 360 300 240 180 T J=25°C 120 60 TJ=125°C T J=-55°C 0 0 0 5 10 15 20 VDS, Drain to Source Voltage (V) 25 0 RDS(on) vs Drain Current Normalized to VGS=10V @ 75A 1.15 VGS=10V 1.10 V GS=20V 1.05 2 3 4 5 6 7 8 DC Drain Current vs Case Temperature 160 I D, DC Drain Current (A) 1.20 1 VGS, Gate to Source Voltage (V) 1.00 0.95 0.90 120 80 40 0 0 60 120 180 240 300 360 ID, Drain Current (A) www.microsemi.com 25 50 75 100 125 TC, Case Temperature (°C) 150 July, 2006 I D, Drain Current (A) 10 480 600 RDS(on) Drain to Source ON Resistance 1 4–6 APTM50AM24SG – Rev 2 Thermal Impedance (°C/W) 0.12 1.1 1.0 0.9 0.8 -50 -25 0 25 50 75 100 125 150 ON resistance vs Temperature 2.5 VGS=10V ID=75A 2.0 1.5 1.0 0.5 0.0 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (°C) TJ, Junction Temperature (°C) Threshold Voltage vs Temperature Maximum Safe Operating Area 1000 1.1 ID, Drain Current (A) VGS (TH), Threshold Voltage (Normalized) 1.2 1.0 0.9 0.8 0.7 0.6 100 limited by RDSon 1ms Single pulse TJ =150°C TC=25°C 10 10ms 1 -50 -25 0 25 50 75 100 125 150 TC, Case Temperature (°C) 1 Capacitance vs Drain to Source Voltage VGS , Gate to Source Voltage (V) 100000 Ciss 10000 Coss 1000 Crss 100 10 0 10 20 30 40 VDS, Drain to Source Voltage (V) 50 10 100 1000 VDS, Drain to Source Voltage (V) Gate Charge vs Gate to Source Voltage 14 V DS=100V I D=150A 12 T =25°C J V =250V DS 10 VDS=400V 8 6 4 2 0 0 100 200 300 400 Gate Charge (nC) 500 600 July, 2006 C, Capacitance (pF) 100µs limited by R DSon www.microsemi.com 5–6 APTM50AM24SG – Rev 2 BVDSS, Drain to Source Breakdown Voltage (Normalized) Breakdown Voltage vs Temperature 1.2 RDS(on), Drain to Source ON resistance (Normalized) APTM50AM24SG APTM50AM24SG Delay Times vs Current Rise and Fall times vs Current 60 80 VDS=333V RG=0.8Ω TJ=125°C L=100µH 60 td(off) 40 t r and tf (ns) t d(on) and td(off) (ns) 50 V DS =333V RG =0.8Ω T J=125°C L=100µH 30 20 td(on) tf 40 20 tr 10 0 0 30 80 130 180 230 ID, Drain Current (A) 280 30 5 4 Eoff 2 1 280 VDS=333V ID=150A TJ=125°C L=100µH 6 Eoff Eon 4 Eoff 2 0 0 30 80 130 180 230 0 280 ID, Drain Current (A) Operating Frequency vs Drain Current 400 300 IDR, Reverse Drain Current (A) ZVS 500 VDS=333V D=50% RG=0.8Ω T J=125°C T C=75°C ZCS 200 Hard switching 100 0 30 60 90 120 1 2 3 4 5 6 7 8 9 Gate Resistance (Ohms) 600 Frequency (kHz) 230 Switching Energy vs Gate Resistance Eon 3 180 8 Switching Energy (mJ) Switching Energy (mJ) VDS=333V RG=0.8Ω T J=125°C L=100µH 6 130 I D, Drain Current (A) Switching Energy vs Current 7 80 150 Source to Drain Diode Forward Voltage 10000 1000 T J=150°C 100 T J=25°C 10 1 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 VSD, Source to Drain Voltage (V) Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. www.microsemi.com 6–6 APTM50AM24SG – Rev 2 July, 2006 ID, Drain Current (A)