NEC NDL5510 1 000 to 1 600 nm optical fiber communications 30 mm ingaas avalanche photo diode module Datasheet

DATA SHEET
PHOTO DIODE
NDL5531P Series
1 000 to 1 600 nm OPTICAL FIBER COMMUNICATIONS
φ 30 µ m InGaAs AVALANCHE PHOTO DIODE MODULE
DESCRIPTION
NDL5531P Series is an InGaAs avalanche photo diode module with single mode fiber. It is designed for detectors
of long wavelength transmission systems. The series covers the wavelength range between 1 000 and 1 600 nm.
FEATURES
•
Small dark current
ID = 5 nA
•
Small terminal capacitance
Ct = 0.35 pF @ 0.9 V(BR)R
•
High quantum efficiency
η = 90 % @ λ = 1 300 nm, M = 1
η = 77 % @ λ = 1 550 nm, M = 1
•
High speed response
fC = 2.5 G H z @ M = 10
•
Detecting area size
φ 3 0 µm
•
Coaxial module with single mode fiber (SM-9/125)
•
PACKAGE DIMENSIONS
in millimeters
NDL5531P1
Optical Fiber:
SM-9/125
Length: 1 m MIN.
Shrunk tube
φ 2.0
30.0 MAX.
30.0 MAX.
1
φ 6.0 +0.0
–0.1
φ 2.0
18.0±0.1
2–φ2.5
2
3
1
φ 2.0
12.0±0.1
PIN CONNECTIONS
1 Anode (Negative)
2 Cathode (Positive)
3 Case
12.5 MIN.
12.5 MIN.
3.9±0.5
2
3
φ2.5
4.0±0.3
1
2–φ2.2
7.0±0.3
1.5
2
3
3.0±0.3
φ 0.45
12.5 MIN. 4.0±0.1
φ 6.0 +0.0
–0.1
6.9±0.3
φ 6.0+0.0
–0.1
6.0+0.0
–0.1
φ2.5
14.0±0.1
30.0 MAX.
φ 2.5
Shrunk tube
2.5±0.1
0.5±0.1
Shrunk tube
6.9±0.3
NDL5531P2
Optical Fiber:
SM-9/125
Length: 1 m MIN.
7.0±0.15
NDL5531P
Optical Fiber:
SM-9/125
Length: 1 m MIN.
16.0±0.2
3
2
1
The information in this document is subject to change without notice.
Document No. P11352EJ2V0DS00 (2nd edition)
Date Published July 1996 P
Printed in Japan
The mark • shows major revised points.
©
1996
NDL5531P Series
•
ORDERING INFORMATION
Part Number
Available Connector
NDL5531P
Without Connector
NDL5531PC
With FC-PC Connector
NDL5531PD
With SC-PC Connector
NDL5531P1
Without Connector
NDL5531P1C
With FC-PC Connector
NDL5531P1D
With SC-PC Connector
NDL5531P2
Without Connector
NDL5531P2C
With FC-PC Connector
NDL5531P2D
With SC-PC Connector
Description
No Flange
Flat Mount Flange
Vertical Flange
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise specified)
Parameter
Symbol
Ratings
Unit
Forward Current
IF
10
mA
Reverse Current
IR
0.5
mA
Operating Case Temperature
TC
−40 to +85
°C
Storage Temperature
Tstg
−40 to +85
°C
ELECTRO-OPTICAL CHARACTERISTICS (TC = 25 °C)
Parameter
Reverse Breakdown Voltage
Symbol
V(BR)R
Conditions
ID = 100 µ A
MIN.
TYP.
MAX.
Unit
50
70
100
V
Temperature Coefficient of
Reverse Breakdown Voltage
δ
Dark Current
ID
VR = V(BR)R × 0.9
5
25
nA
Multiplied Dark Current
IDM
M = 2 to 10
1
5
nA
Terminal Capacitance
Ct
VR = V(BR)R × 0.9, f = 1 MHz
0.35
0.60
pF
Cut-off Frequency
fC
M = 10
2.5
Quantum Efficiency
η
λ = 1 300 nm, M = 1
76
90
λ = 1 550 nm, M = 1
65
77
λ = 1 300 nm, M = 1
0.80
0.94
λ = 1 550 nm, M = 1
0.81
0.96
30
40
Responsivity
*1
S
Multiplication Factor
M
0.2
λ = 1 300 nm, Ipo = 1.0 µ A
GHz
VR = V (@ ID = 1 µ A )
*2
Excess Noise Factor
*1 δ =
λ = 1 300 nm, 1 550 nm, Ipo = 1.0 µ A
F
M = 10, f = 35 MHz, B = 1 MHz
V(BR)R < 25 °C + ∆T °C > −V(BR)R < 25 °C >
∆T °C ⋅ V(BR)R < 25 °C >
X
*2 F = M
2
x
%/°C
0.7
5
%
A/W
NDL5531P Series
•
WAVELENGTH DEPENDENCE
OF QUANTUM EFFICIENCY
Quantum Efficiency η (%)
100
80
60
40
20
0
0.9
1.0
1.1
1.2
1.3
1.4
1.5
1.6
1.7
Responsivity (Relative Value) ∆ S/S (%)
TYPICAL CHARACTERISTICS (TC = 25 °C, unless otherwise specified)
TEMPERATURE DEPENDENCE OF
RESPONSIVITY
10
λ = 1 300 nm
0
–10
–60 –40
Wavelength λ ( µ m)
DARK CURRENT and PHOTO
CURRENT vs. REVERSE VOLTAGE
10–3
10–6
Dark Current ID (A)
–4
10
Iph
10–7
TC = 85 ˚C
10–8
TC = 65 ˚C
10–9
TC = 25 ˚C
TC = –20 ˚C
10–10
10–6
0
20
40
60
80
Reverse Voltage VR (V)
100
MULTIPLICATION FACTOR vs.
REVERSE VOLTAGE
10–7
103
Multiplication Factor M
Dark Current, Photo Current ID, lph (A)
DARK CURRENT vs.
REVERSE VOLTAGE
λ = 1 300 nm
Ipo = 1.0 µA
10–5
–20
20
0
40 60
80 100
Case Temperature TC (˚C)
10–8
ID
10–9
10–10
TC = 65 ˚C
102
TC = –20 ˚C
TC = 25 ˚C
101
TC = 85 ˚C
100
0
20
40
60
80
Reverse Voltage VR (V)
100
0
20
40
60
80
Reverse Voltage VR (V)
100
3
TERMINAL CAPACITANCE vs.
REVERSE VOLTAGE
TEMPERATURE DEPENDENCE OF DARK
CURRENT vs. MULTIPLIED DARK CURRENT
10–6
λ = 1 300 nm
ID @ VR = 0.9 V(BR)R
10–7
IDM
10–8
10–9
10–10
10–11
–60 –40
Terminal Capacitance Ct (pF)
Dark Current, Multiplied Dark Current ID, IDM (A)
NDL5531P Series
2
1
0.5
0.2
0.1
–20 0
20
40
60
Case Temperature TC (˚C)
80 100
1
CUT-OFF FREQUENCY vs.
MULTIPLICATION FACTOR
λ = 1 300 nm
1
1
10
Multiplication Factor M
100
EXCESS NOISE FACTOR vs.
MULTIPLICATION FACTOR
100
Excess Noise Factor F
100
3
0
–3
–6
–9
0.1
1 300 nm ( ), 1 550 nm ( )
f = 35 MHz, B = 1 MHz
50
0.5
0.4
20
10
5
2
1
4
50
λ = 1 300 nm
RL = 50 Ω
M = 10
9
6
G × B = 50 GHz
10
5
10
20
Reverse Voltage VR (V)
FREQUENCY RESPONSE
Response (dB)
Cut-off Frequency fC (GHz)
100
2
1
2
5
10
20
Multiplication Factor M
50
100
0
1.0
2.0
3.0
4.0
Frequency f (GHz)
5.0
NDL5531P Series
HANDLING PRECAUTION for PD/APD MODULE
The NEC PD/APD module has heat shrink tubing to protect the ferrule edge (*1) and the junction between the
ferrule and the module body (*2). In order to avoid breaking the fiber and/or optical coupling degradation, NEC
recommends the following handling precautions.
1. Do not make the fiber bend radius less than 30 mm (*3).
2. Do not bend the fiber within the 18 mm section from the module body (*4).
3. Do not stress the ferrule with a lateral force exceeding 500 g (*5).
30
m
m
fiber
in
m
)
(*3
ferrule (*5)
18 mm min. (*4)
(*1)
(*2)
module body
5
NDL5531P Series
•
InGaAs APD/PD FAMILY
Features
Packages
TO-18 type Can
TO-18 type Can with
APD
φ 30 µm
φ 50 µm
(for 2.5 Gb/s)
(for 2.5 Gb/s)
NDL5530


PIN-PD
φ 50 µm
φ 80 µm
φ 50 µm
φ 80 µm
Remarks
(for 2.5 Gb/s)
NDL5500

NDL5510

*3, 4



NDL5490L



NDL5490
3 pins
NDL5405L
3 pins
Micro Lens
Small Can
NDL5531
*3, 4

φ 5.6 µm
Chip on Carrier
Receptacle Module
NDL5530C

NDL5520C
NDL5500C


NDL5510C




NDL5471RC
3 pins
NDL5471RD
RC: FC receptacle
RD: SC receptacle
Coaxial Module with

MMF
*2
NDL5521P
NDL5551P
NDL5561P
NDL5521P1
NDL5551P1
NDL5561P1
NDL5521P2
NDL5551P2
NDL5561P2
NDL5553P
*2
*2
NDL5421P
NDL5461P
P1, P2: With flange
NDL5421P1
NDL5461P1
NDL5590P Series:
NDL5421P2
NDL5461P2
With Pre-AMP
*1
*1
NDL5553P1
*1
NDL5553P2
NDL5590P
NDL5590P1
NDL5590P2
Coaxial Module with
SMF
NDL5531P

NDL5553PS
*1
NDL5553P1S
NDL5531P1


*
*5
*5
NDL5481P1
*5
1
NDL5531P2
NDL5481P
NDL5481P2
NDL5553P2S
*
1
14-pin DIP Module


with TEC
6-pin BFY Module
NDL5506P



NDL5522P

∆T = 45 K (@ IC = 1.1 A)
PS: With SMF

NDL5422P
with MMF
*1 For OTDR
*2 With GI-62.5/125
*3 Under development
*4 Internal pre-amplifier for 1 Gb/s
*5 For analog application (optical CATV)
Remark Modules are available with FC-PC connector or optional SC-PC connector.
6

NDL5506PS

With Pre-AMP
NDL5531P Series
REFERENCE
Document Name
Document No.
NEC semiconductor device reliability/quality control system
LEI-1201
Quality grades on NEC semiconductor devices
IEI-1209
Semiconductor device mounting technology manual
C10535E
Guide to quality assurance for semiconductor devices
MEI-1202
Semiconductor selection guide
X10679E
7
NDL5531P Series
CAUTION
Within this device there exists GaAs (Gallium Arsenide) material which is a
harmful substance if ingested. Please do not under any circumstances break the
hermetic seal.
The export of this product from Japan is prohibited without governmental license. To export or re-export this product from
a country other than Japan may also be prohibited without a license from that country. Please call an NEC sales
representative.
No part of this document may be copied or reproduced in any form or by any means without the prior written
consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this
document.
NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual
property rights of third parties by or arising from use of a device described herein or any other liability arising
from use of such device. No license, either express, implied or otherwise, is granted under any patents,
copyrights or other intellectual property rights of NEC Corporation or others.
While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices,
the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or
property arising from a defect in an NEC semiconductor device, customer must incorporate sufficient safety
measures in its design, such as redundancy, fire-containment, and anti-failure features.
NEC devices are classified into the following three quality grades:
"Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on
a customer designated "quality assurance program" for a specific application. The recommended applications
of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each
device before using it in a particular application.
Standard: Computers, office equipment, communications equipment, test and measurement equipment,
audio and visual equipment, home electronic appliances, machine tools, personal electronic
equipment and industrial robots
Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
for life support)
Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life
support systems or medical equipment for life support, etc.
The quality grade of NEC devices in "Standard" unless otherwise specified in NEC's Data Sheets or Data Books.
If customers intend to use NEC devices for applications other than those specified for Standard quality grade,
they should contact NEC Sales Representative in advance.
Anti-radioactive design is not implemented in this product.
M4 94. 11
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