oH V SC AV ER OM AI SIO PL LA N IA BL S NT E Features ■ *R ■ ■ ■ ■ Lead free versions available RoHS compliant (lead free version)* Reverse voltage from 20 to 60 V Forward current of 1 A High current capability ■ For use in low voltage high frequency inverters, free wheeling and polarity protection applications CD214B-B120 ~ B160 Schottky Barrier Rectifier Chip Diode General Information The markets of portable communications, computing and video equipment are challenging the semiconductor industry to develop increasingly smaller electronic components. Bourns offers Schottky Rectifier Diodes for rectification applications, in compact chip package DO-214AA (SMB) size format, which offer PCB real estate savings and are considerably smaller than most competitive parts. The Schottky Rectifier Diodes offer a forward current of 1 A with a choice of repetitive peak reverse voltage of 20 V up to 60 V. Bourns® Chip Diodes conform to JEDEC standards, are easy to handle with standard pick and place equipment and the flat configuration minimizes roll away. Electrical Characteristics (@ TA = 25 °C Unless Otherwise Noted) Parameter Symbol CD214BB120 B130 B140 B150 B160 0.5 0.5 0.5 0.7 0.7 Unit Forward Voltage (Max.) (If = 2 A) VF Typical Junction Capacitance* CT 110 pF Reverse Current (Max.) at Rated VR) IR 0.5 mA V * Measured at 1.0 MHz and applied reverse voltage of 4.0 V DC. Absolute Ratings (@ TA = 25 °C Unless Otherwise Noted) Parameter Symbol Repetitive Peak Reverse Voltage Reverse Voltage Maximum RMS Voltage Avg. Forward Current CD214B- Unit B120 B130 B140 B150 B160 VRRM 20 30 40 50 60 V VR 20 30 40 50 60 V VRMS 14 21 28 35 42 V IO 1 A Forward Current, Surge Peak (60 Hz, 1 cycle) Isurge 30 A Typical Thermal Resistance** RΘJL 20 °C/W Storage Temperature TSTG -55 to +150 °C Junction Temperature TJ -55 to +125 °C ** Thermal resistance junction to lead. Reliable Electronic Solutions *RoHS Directive 2002/95/EC Jan 27 2003 including Annex Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications. Asia-Pacific: Tel: +886-2 2562-4117 • Fax: +886-2 2562-4116 Europe: Tel: +41-41 768 5555 • Fax: +41-41 768 5510 The Americas: Tel: +1-951 781-5500 • Fax: +1-951 781-5700 www.bourns.com CD214B-B120 ~ B160 Schottky Barrier Rectifier Chip Diode Product Dimensions Recommended Pad Layout A A B C B DIMENSIONS: G MM (INCHES) Dimension A (Max.) F H B (Min.) D E C (Min.) Dimension A B C D E F G H SMB (DO-214AA) 4.06 - 4.57 (0.160 - 0.180) 3.30 - 3.94 (0.130 - 0.155) 1.96 - 2.21 (0.078 - 0.087) 0.15 - 0.31 (0.006 - 0.112) 5.21 - 5.59 (0.205 - 0.220) 0.05 - 0.20 (0.002 - 0.008) 2.01 - 2.62 (0.080 - 0.103) 0.76 - 1.52 (0.030 - 0.060) C SMB (DO-214AA) 2.69 (0.106) 2.10 (0.083) 1.27 (0.050) Physical Specifications Case ............................................................................Molded plastic Polarity ....................................................Indicated by cathode band Weight ....................................................0.003 ounces / 0.093 grams Typical Part Marking CD214B-B220 ...................................................................... 120B CD214B-B230 ...................................................................... 130B CD214B-B240 ...................................................................... 140B CD214B-B250 ...................................................................... 150B CD214B-B260 ...................................................................... 160B How To Order MM DIMENSIONS: (INCHES) CD 214B - B 1 30 __ Common Code Chip Diode Package • 214B = SMB/DO-214AA Model B = Schottky Barrier Series Average Forward Current (Io) Code 1 = 1 A (Code x 1000 mA = Average Forward Current) Reverse Voltage (VR) Code 20 = 20 V 30 = 30 V 40 = 40 V 50 = 50 V 60 = 60 V Terminations LF = 100 % Sn (lead free) Blank = Sn/Pb *RoHS Directive 2002/95/EC Jan 27 2003 including Annex Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications. CD214B-B120 ~ B160 Schottky Barrier Rectifier Chip Diode Rating and Characteristic Curves Maximum Non-Repetitive Surge Current Forward Current Derating Curve Peak Forward Surge Current (Amps) Average Forward Current (Amps) 1.00 0.75 0.50 0.25 Single Phase Half Wave 60 Hz Resistive or Inductive Load 0.00 20 40 60 80 100 120 30 20 10 Pulse Width 8.3 ms Single Half Sine-Wave (JEDEC Method) 0 140 1 2 Lead Temperature (°C) 10 20 100 1000 10 B120 to B140 1.0 Capacitance (pF) Ta = 25 °C Pulsewidth: 300 µs B150 to B160 0.1 100 F = 1 MHz TJ = 25 °C .01 0 0.4 0.2 0.6 0.8 1.0 0 0.1 Instantaneous Forward Voltage (Volts) 1.0 4.0 10.0 Reverse Voltage (Volts) Typical Reverse Characteristics 100 10 Instantaneous Reverse Current (mA) 50 Typical Junction Capacitance Typical Forward Characteristics Instantaneous Forward Current (Amps) 5 Number of Cycles at 60 Hz Ta = 125 °C 1.0 Ta = 100 °C 0.1 0.01 Ta = 25 °C 0.001 0 20 40 60 80 100 120 140 Percent of Rated Peak Reverse Voltage (%) *RoHS Directive 2002/95/EC Jan 27 2003 including Annex Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications. 100 CD214B-B120 ~ B160 Schottky Barrier Rectifier Chip Diode Packaging Information The product will be dispensed in Tape and Reel format (see diagram below). P 0 P 1 d T E Index Hole 120 ° F D2 W B D1 D P A Trailer End C Device Leader ....... ....... ....... ....... ....... ....... ....... ....... W1 Start DIMENSIONS: 10 pitches (min.) 10 pitches (min.) Devices are packed in accordance with EIA standard RS-481-A and specifications shown here. Direction of Feed Item Overall Tape Thickness T Tape Width W Reel Width W1 SMB (DO-214AA) 4.94 ± 0.10 (0.194 - 0.004) 5.57 ± 0.10 (0.219 - 0.004) 2.36 ± 0.10 (0.093 - 0.004) 1.55 ± 0.05 (0.061 - 0.002) 330 (12.992) 50.0 MIN. (1.969) 13.0 ± 0.20 (0.512 - 0.008) 1.75 ± 0.10 (0.069 - 0.004)) 5.50 ± 0.05 (0.217 - 0.002) 4.00 ± 0.10 (0.157 - 0.004) 4.00 ± 0.10 (0.157 - 0.004) 2.00 ± 0.05 (0.079 - 0.002) 0.30 ± 0.10 (0.012 - 0.004) 12.00 ± 0.20 (0.472 - 0.008) 18.4 MAX. (0.724) Symbol -- 3,000 Carrier Width A Carrier Length B Carrier Depth C Sprocket Hole d Reel Outside Diameter D Reel Inner Diameter D1 Feed Hole Diameter D2 Sprocket Hole Position E Punch Hole Position F Punch Hole Pitch P Sprocket Hole Pitch P0 Embossment Center P1 Quantity per Reel REV. 04/05 MM (INCHES) *RoHS Directive 2002/95/EC Jan 27 2003 including Annex Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications.