NUF4220MN 4 Line Audio EMI Filter with ESD Protection NUF4220MN is a 4 line LC EMI filter array designed for audio applications. It offers greater than −30 dB attenuation at frequencies from 800 MHz to 5.0 GHz, with no line loss. This part is a single chip solution for audio interface applications, 2 speaker lines with a microphone line. This device also offers ESD protection−clamping transients from static discharges and ESD protection is provided across all capacitors. http://onsemi.com L 1 8 C1 Features L • Provides EMI Filtering and ESD Protection • Integration of 20 Discretes • Compliance with IEC61000−4−2 (Level 4) • • • • • C1 2 7 C2 C2 L 18 kV (Contact) DFN8, 2x2 mm Package Moisture Sensitivity Level 1 ESD Ratings: Machine Model = C Human Body Model = 3B Excellent Line Efficiency with Low Line Resistance < 1.1 max This is a Pb−Free Device* 3 6 C3 C3 L 4 5 C4 C4 (Top View) MARKING DIAGRAM Applications • • • • • • Headset MP3s PDAs Digital Cameras Portable DVDs Handfree Interface DFN8 CASE 506AA PLASTIC 1 1 R2 MG G 4 R2 = Specific Device Code M = Date Code G = Pb−Free Package 1 2 3 4 GND 8 7 6 5 (Bottom View) ORDERING INFORMATION *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2006 October, 2006 − Rev. 0 1 Device Package Shipping† NUF4220MNT1G DFN8 (Pb−Free) 3000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. Publication Order Number: NUF4220MN/D NUF4220MN MAXIMUM RATINGS Parameter Symbol Value Unit VPP 18 kV Steady−State Power per Inductor PL 90 mW Steady−State Power per Package PT 360 mW ESD Discharge IEC61000−4−2 Contact Discharge Operating Temperature Range TOP −40 to 85 °C Storage Temperature Range Tstg −55 to 150 °C Maximum Lead Temperature for Soldering Purposes (1.8 in from case for 10 s) TL 260 °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Parameter Test Conditions Symbol Maximum Reverse Working Voltage Breakdown Voltage Leakage Current Min Typ VRWM IR = 1.0 mA VBR VRWM = 3.3 V IR Inductance 6.0 7.0 Max Unit 5.0 V 8.0 V 0.1 A 4.9 L RS Capacitance (Note 1, 3) Cd 205 pF f3dB 16 MHz Above this frequency, appreciable attenuation occurs 1. Measured at 25°C, VR = 0 V, f = 1.0 MHz. 2. 50 source and 50 load termination. 3. Total line capacitance is 2 times the diode capacitance (Cd). http://onsemi.com 2 0.85 1.1 Series Resistance Cut−Off Frequency (Note 2) 0.6 nH NUF4220MN TYPICAL PERFORMANCE CURVES (TA = 25°C unless otherwise specified) 0 0 −5.0 −10 −10 −20 S41 (dB) S21 (dB) −15 −20 −25 −30 −40 −50 −30 −60 −35 −70 −40 −80 −45 1.0E+6 10E+6 100E+6 1.0E+9 10E+6 10E+9 100E+6 FREQUENCY (Hz) Figure 1. Typical Insertion Loss Characteristics 10E+9 Figure 2. Typical Analog Crosstalk 1.2 1.2 1.0 1.0 RESISTANCE () NORMALIZED CAPACITANCE 1.0E+9 FREQUENCY (MHz) 0.8 0.6 0.4 0.2 0.8 0.6 0.4 0.2 0 −40 0 0 1.0 2.0 3.0 4.0 5.0 REVERSE BIAS VOLTAGE (V) −15 10 35 60 TEMPERATURE (°C) Figure 3. Typical Line Capacitance vs. Reverse Bias Voltage (Normalized to Capacitance @ 0 V) Figure 4. Typical Resistance Over Temperature http://onsemi.com 3 85 NUF4220MN PACKAGE DIMENSIONS DFN8 CASE 506AA−01 ISSUE C D NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994 . 2. CONTROLLING DIMENSION: MILLIMETERS. 3. DIMENSION b APPLIES TO PLATED TERMINAL AND IS MEASURED BETWEEN 0.25 AND 0.30 MM FROM TERMINAL. 4. COPLANARITY APPLIES TO THE EXPOSED PAD AS WELL AS THE TERMINALS. A B PIN ONE REFERENCE 2X 0.10 C 2X 0.10 C ÇÇÇ ÇÇÇ ÇÇÇ ÇÇÇ TOP VIEW 0.08 C SEATING PLANE MILLIMETERS MIN MAX 0.80 1.00 0.00 0.05 0.20 REF 0.20 0.30 2.00 BSC 1.10 1.30 2.00 BSC 0.70 0.90 0.50 BSC 0.20 −−− 0.25 0.35 A 0.10 C 8X DIM A A1 A3 b D D2 E E2 e K L E (A3) SIDE VIEW A1 C D2 e e/2 4 1 8X L E2 K 8 5 8X b 0.10 C A B 0.05 C NOTE 3 BOTTOM VIEW ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. 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