MMBF170LT1 Power MOSFET 500 mA, 60 V N-Channel SOT-23 Features http://onsemi.com •Pb-Free Packages are Available 500 mA, 60 V RDS(on) = 5 W MAXIMUM RATINGS Rating Symbol Value Unit Drain-Source Voltage VDSS 60 Vdc Drain-Gate Voltage VDGS 60 Vdc Gate-Source Voltage - Continuous - Non-repetitive (tp ≤ 50 ms) VGS VGSM ±20 ±40 Vdc Vpk ID IDM 0.5 0.8 Adc Drain Current - Continuous - Pulsed SOT-23 CASE 318 STYLE 21 N-Channel THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR-5 Board (Note 1.) TA = 25°C Derate above 25°C Thermal Resistance, Junction-to-Ambient Junction and Storage Temperature 3 Symbol Max Unit 225 1.8 mW mW/°C RqJA 556 °C/W TJ, Tstg -55 to +150 °C PD 1 2 Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. FR-5 = 1.0 0.75 0.062 in. MARKING DIAGRAM & PIN ASSIGNMENT 3 Drain 6Z MG G Gate 1 2 Source 6Z = Specific Device Code M = Date Code G = Pb-Free Package (Note: Microdot may be in either location) ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. © Semiconductor Components Industries, LLC, 2008 April, 2008 - Rev. 6 1 Publication Order Number: MMBF170LT1/D MMBF170LT1 ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Symbol Min Max Unit V(BR)DSS 60 - Vdc IGSS - 10 nAdc Gate Threshold Voltage (VDS = VGS, ID = 1.0 mA) VGS(th) 0.8 3.0 Vdc Static Drain-Source On-Resistance (VGS = 10 Vdc, ID = 200 mA) rDS(on) - 5.0 W ID(off) - 0.5 mA Ciss - 60 pF td(on) - 10 ns td(off) - 10 Characteristic OFF CHARACTERISTICS Drain-Source Breakdown Voltage (VGS = 0, ID = 100 mA) Gate-Body Leakage Current, Forward (VGSF = 15 Vdc, VDS = 0) ON CHARACTERISTICS (Note 1) On-State Drain Current (VDS = 25 Vdc, VGS = 0) DYNAMIC CHARACTERISTICS Input Capacitance (VDS = 10 Vdc, VGS = 0 V, f = 1.0 MHz) SWITCHING CHARACTERISTICS (Note 1) Turn-On Delay Time (VDD = 25 Vdc, ID = 500 mA, Rgen = 50 W) Figure 1 Turn-Off Delay Time 1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%. ORDERING INFORMATION Package Shipping† MMBF170LT1 SOT-23 (TO-236) 3,000 Tape & Reel MMBF170LT1G SOT-23 (TO-236) (Pb-Free) 3,000 Tape & Reel MMBF170LT3 SOT-23 (TO-236) 10,000 Tape & Reel MMBF170LT3G SOT-23 (TO-236) (Pb-Free) 10,000 Tape & Reel Device †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. +25 V ton td(on) 125 W PULSE GENERATOR 50 W Vin 20 dB 50 W ATTENUATOR 40 pF TO SAMPLING SCOPE 50 W INPUT Vout OUTPUT INVERTED Vout tr 90% 50% Vin 1 MW 90% 10% INPUT 50 W toff tf td(off) 90% 50% 10% PULSE WIDTH (Vin AMPLITUDE 10 VOLTS) Figure 1. Switching Test Circuit Figure 2. Switching Waveform http://onsemi.com 2 MMBF170LT1 TYPICAL ELECTRICAL CHARACTERISTICS 1.2 TJ = 25°C VDS ≥ 10 V ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 1.0 4.5 V 0.8 4.2 V 0.6 4.0 V 3.8 V 3.6 V 3.4 V 3.2 V 3.0 V 2.8 V 0.4 0.2 0 0 1 2 3 4 6 5 0.6 0.4 TJ = 150°C 0.2 TJ = 25°C TJ = -55°C 0 7 1 2 3 4 5 6 7 VDS, DRAIN-TO-SOURCE VOLTAGE (V) VGS, GATE-TO-SOURCE VOLTAGE (V) Figure 3. On-Region Characteristics Figure 4. Transfer Characteristics VGS, GATE-TO-SOURCE VOLTAGE (V) 8 TJ = 25°C 7 0.8 30 15 QT 25 12.5 6 5 4 3 VGS = 4.5 V 2 1 0 0.15 VGS = 10 V 0.25 0.35 0.45 0.55 0.65 0.75 20 10 VGS VDS 15 7.5 Qgs 5 Qgd 10 ID = 0.5 A TJ = 25°C 2.5 0.85 0 0 0.5 1 1.5 ID, DRAIN CURRENT (A) Qg, TOTAL GATE CHARGE (nC) Figure 5. On-Resistance vs. Drain Current and Gate Voltage Figure 6. Gate-to-Source and Drain-to-Source Voltage vs. Total Charge 0.24 IS, SOURCE CURRENT (A) 0.22 0.20 0.18 VGS = 0 V TJ = 25°C 0.16 0.14 0.12 0.10 0.08 0.06 0.04 0.02 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 VSD, SOURCE-TO-DRAIN VOLTAGE (V) Figure 7. Diode Forward Voltage vs. Current http://onsemi.com 3 8 VDS, DRAIN-TO-SOURCE VOLTAGE (V) RDS(on), DRAIN-TO-SOURCE RESISTANCE (W) 1.0 5.0 V VGS = 10 V 1.0 5 0 2 MMBF170LT1 2.4 2.2 VGS = 10 V ID = 200 mA 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 -60 -20 20 60 T, TEMPERATURE (°C) 100 140 VGS(th), THRESHOLD VOLTAGE (NORMALIZED) r DS(on) , STATIC DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) TYPICAL ELECTRICAL CHARACTERISTICS 1.2 VDS = VGS ID = 1.0 mA 1.05 1.1 1.10 1.0 0.95 0.9 0.85 0.8 0.75 0.7 -60 Figure 8. Temperature versus Static Drain-Source On-Resistance -20 20 60 T, TEMPERATURE (°C) 100 Figure 9. Temperature versus Gate Threshold Voltage http://onsemi.com 4 140 MMBF170LT1 PACKAGE DIMENSIONS SOT-23 (TO-236) CASE 318-08 ISSUE AN D NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. 318-01 THRU -07 AND -09 OBSOLETE, NEW STANDARD 318-08. SEE VIEW C 3 HE E c 1 DIM A A1 b c D E e L L1 HE 2 b 0.25 e q A L A1 MIN 0.89 0.01 0.37 0.09 2.80 1.20 1.78 0.10 0.35 2.10 MILLIMETERS NOM MAX 1.00 1.11 0.06 0.10 0.44 0.50 0.13 0.18 2.90 3.04 1.30 1.40 1.90 2.04 0.20 0.30 0.54 0.69 2.40 2.64 MIN 0.035 0.001 0.015 0.003 0.110 0.047 0.070 0.004 0.014 0.083 INCHES NOM 0.040 0.002 0.018 0.005 0.114 0.051 0.075 0.008 0.021 0.094 MAX 0.044 0.004 0.020 0.007 0.120 0.055 0.081 0.012 0.029 0.104 STYLE 21: PIN 1. GATE 2. SOURCE 3. DRAIN L1 VIEW C SOLDERING FOOTPRINT* 0.95 0.037 0.95 0.037 2.0 0.079 0.9 0.035 0.8 0.031 SCALE 10:1 mm Ǔ ǒinches SOT-23 *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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