ON MMBF170LT3G Power mosfet 500 ma, 60 v n-channel sot-23 Datasheet

MMBF170LT1
Power MOSFET
500 mA, 60 V
N-Channel SOT-23
Features
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•Pb-Free Packages are Available
500 mA, 60 V
RDS(on) = 5 W
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Drain-Source Voltage
VDSS
60
Vdc
Drain-Gate Voltage
VDGS
60
Vdc
Gate-Source Voltage
- Continuous
- Non-repetitive (tp ≤ 50 ms)
VGS
VGSM
±20
±40
Vdc
Vpk
ID
IDM
0.5
0.8
Adc
Drain Current - Continuous
- Pulsed
SOT-23
CASE 318
STYLE 21
N-Channel
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR-5 Board
(Note 1.) TA = 25°C
Derate above 25°C
Thermal Resistance, Junction-to-Ambient
Junction and Storage Temperature
3
Symbol
Max
Unit
225
1.8
mW
mW/°C
RqJA
556
°C/W
TJ, Tstg
-55 to
+150
°C
PD
1
2
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR-5 = 1.0 0.75 0.062 in.
MARKING DIAGRAM
& PIN ASSIGNMENT
3
Drain
6Z MG
G
Gate 1
2 Source
6Z
= Specific Device Code
M
= Date Code
G
= Pb-Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
See detailed ordering and shipping information in the
package dimensions section on page 2 of this data sheet.
© Semiconductor Components Industries, LLC, 2008
April, 2008 - Rev. 6
1
Publication Order Number:
MMBF170LT1/D
MMBF170LT1
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Symbol
Min
Max
Unit
V(BR)DSS
60
-
Vdc
IGSS
-
10
nAdc
Gate Threshold Voltage (VDS = VGS, ID = 1.0 mA)
VGS(th)
0.8
3.0
Vdc
Static Drain-Source On-Resistance (VGS = 10 Vdc, ID = 200 mA)
rDS(on)
-
5.0
W
ID(off)
-
0.5
mA
Ciss
-
60
pF
td(on)
-
10
ns
td(off)
-
10
Characteristic
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage (VGS = 0, ID = 100 mA)
Gate-Body Leakage Current, Forward (VGSF = 15 Vdc, VDS = 0)
ON CHARACTERISTICS (Note 1)
On-State Drain Current (VDS = 25 Vdc, VGS = 0)
DYNAMIC CHARACTERISTICS
Input Capacitance
(VDS = 10 Vdc, VGS = 0 V, f = 1.0 MHz)
SWITCHING CHARACTERISTICS (Note 1)
Turn-On Delay Time
(VDD = 25 Vdc, ID = 500 mA, Rgen = 50 W)
Figure 1
Turn-Off Delay Time
1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.
ORDERING INFORMATION
Package
Shipping†
MMBF170LT1
SOT-23 (TO-236)
3,000 Tape & Reel
MMBF170LT1G
SOT-23 (TO-236)
(Pb-Free)
3,000 Tape & Reel
MMBF170LT3
SOT-23 (TO-236)
10,000 Tape & Reel
MMBF170LT3G
SOT-23 (TO-236)
(Pb-Free)
10,000 Tape & Reel
Device
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
+25 V
ton
td(on)
125 W
PULSE
GENERATOR
50 W
Vin
20 dB 50 W
ATTENUATOR
40 pF
TO SAMPLING
SCOPE
50 W INPUT
Vout
OUTPUT
INVERTED
Vout
tr
90%
50%
Vin
1 MW
90%
10%
INPUT
50 W
toff
tf
td(off)
90%
50%
10%
PULSE WIDTH
(Vin AMPLITUDE 10 VOLTS)
Figure 1. Switching Test Circuit
Figure 2. Switching Waveform
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2
MMBF170LT1
TYPICAL ELECTRICAL CHARACTERISTICS
1.2
TJ = 25°C
VDS ≥ 10 V
ID, DRAIN CURRENT (A)
ID, DRAIN CURRENT (A)
1.0
4.5 V
0.8
4.2 V
0.6
4.0 V
3.8 V
3.6 V
3.4 V
3.2 V
3.0 V
2.8 V
0.4
0.2
0
0
1
2
3
4
6
5
0.6
0.4
TJ = 150°C
0.2
TJ = 25°C
TJ = -55°C
0
7
1
2
3
4
5
6
7
VDS, DRAIN-TO-SOURCE VOLTAGE (V)
VGS, GATE-TO-SOURCE VOLTAGE (V)
Figure 3. On-Region Characteristics
Figure 4. Transfer Characteristics
VGS, GATE-TO-SOURCE VOLTAGE (V)
8
TJ = 25°C
7
0.8
30
15
QT
25
12.5
6
5
4
3
VGS = 4.5 V
2
1
0
0.15
VGS = 10 V
0.25
0.35
0.45
0.55
0.65
0.75
20
10
VGS
VDS
15
7.5
Qgs
5
Qgd
10
ID = 0.5 A
TJ = 25°C
2.5
0.85
0
0
0.5
1
1.5
ID, DRAIN CURRENT (A)
Qg, TOTAL GATE CHARGE (nC)
Figure 5. On-Resistance vs. Drain Current and
Gate Voltage
Figure 6. Gate-to-Source and
Drain-to-Source Voltage vs. Total Charge
0.24
IS, SOURCE CURRENT (A)
0.22
0.20
0.18
VGS = 0 V
TJ = 25°C
0.16
0.14
0.12
0.10
0.08
0.06
0.04
0.02
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
VSD, SOURCE-TO-DRAIN VOLTAGE (V)
Figure 7. Diode Forward Voltage vs. Current
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3
8
VDS, DRAIN-TO-SOURCE VOLTAGE (V)
RDS(on), DRAIN-TO-SOURCE RESISTANCE (W)
1.0
5.0 V
VGS = 10 V
1.0
5
0
2
MMBF170LT1
2.4
2.2
VGS = 10 V
ID = 200 mA
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
-60
-20
20
60
T, TEMPERATURE (°C)
100
140
VGS(th), THRESHOLD VOLTAGE (NORMALIZED)
r DS(on) , STATIC DRAIN-SOURCE ON-RESISTANCE
(NORMALIZED)
TYPICAL ELECTRICAL CHARACTERISTICS
1.2
VDS = VGS
ID = 1.0 mA
1.05
1.1
1.10
1.0
0.95
0.9
0.85
0.8
0.75
0.7
-60
Figure 8. Temperature versus Static
Drain-Source On-Resistance
-20
20
60
T, TEMPERATURE (°C)
100
Figure 9. Temperature versus Gate
Threshold Voltage
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4
140
MMBF170LT1
PACKAGE DIMENSIONS
SOT-23 (TO-236)
CASE 318-08
ISSUE AN
D
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH
THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM
THICKNESS OF BASE MATERIAL.
4. 318-01 THRU -07 AND -09 OBSOLETE, NEW STANDARD 318-08.
SEE VIEW C
3
HE
E
c
1
DIM
A
A1
b
c
D
E
e
L
L1
HE
2
b
0.25
e
q
A
L
A1
MIN
0.89
0.01
0.37
0.09
2.80
1.20
1.78
0.10
0.35
2.10
MILLIMETERS
NOM
MAX
1.00
1.11
0.06
0.10
0.44
0.50
0.13
0.18
2.90
3.04
1.30
1.40
1.90
2.04
0.20
0.30
0.54
0.69
2.40
2.64
MIN
0.035
0.001
0.015
0.003
0.110
0.047
0.070
0.004
0.014
0.083
INCHES
NOM
0.040
0.002
0.018
0.005
0.114
0.051
0.075
0.008
0.021
0.094
MAX
0.044
0.004
0.020
0.007
0.120
0.055
0.081
0.012
0.029
0.104
STYLE 21:
PIN 1. GATE
2. SOURCE
3. DRAIN
L1
VIEW C
SOLDERING FOOTPRINT*
0.95
0.037
0.95
0.037
2.0
0.079
0.9
0.035
0.8
0.031
SCALE 10:1
mm Ǔ
ǒinches
SOT-23
*For additional information on our Pb-Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
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MMBF170LT1/D
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