CPH3116 / CPH3216 Ordering number : EN6405E SANYO Semiconductors DATA SHEET CPH3116 / CPH3216 PNP / NPN Epitaxial Planar Silicon Transistors DC / DC Converter Applications Applications • Relay drivers, lamp drivers, motor drivers, flash. Features • • • • • • Adoption of MBIT processes. Large current capacitance. Low collector-to-emitter saturation voltage. High-speed switching. Ultrasmall package facilitates miniaturization in end products (mounting height : 0.9mm). High allowable power dissipation. ( ) : CPH3116 Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO (--50)80 V Collector-to-Emitter Voltage VCES (--50)80 V Collector-to-Emitter Voltage VCEO (--)50 V Emitter-to-Base Voltage VEBO (--)5 V (--)1.0 A Collector Current Base Current IC ICP IB Collector Dissipation PC Junction Temperature Tj Storage Temperature Tstg Collector Current (Pulse) (--)3 (--)200 Mounted on a ceramic board (600mm2✕0.8mm) A mA 0.9 W 150 °C --55 to +150 °C Electrical Characteristics at Ta=25°C Parameter Symbol Collector Cutoff Current ICBO IEBO Emitter Cutoff Current DC Current Gain hFE Marking : CPH3116 : AR, CPH3216 : CR Conditions VCB=(--)40V, IE=0 VEB=(--)4V, IC=0 VCE=(--)2V, IC=(--)100mA Ratings min typ max 200 Unit (--)0.1 µA (--)0.1 µA 560 Continued on next page. Any and all SANYO Semiconductor products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO Semiconductor representative nearest you before usingany SANYO Semiconductor products described or contained herein in such applications. SANYO Semiconductor assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor products described or contained herein. http://semicon.sanyo.com/en/network TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 81006EA MS IM / 62504 TS IM TB-00000308 / 83100 TS (KOTO) / 21000 TS (KOTO) TA-2706 No.6405-1/5 CPH3116 / CPH3216 Continued from preceding page. Parameter Symbol Gain-Bandwideth Product fT Cob Output Capacitance Ratings Conditions min typ VCE=(--)10V, IC=(--)300mA VCB=(--)10V, f=1MHz VCE(sat)1 420 (--280) IC=(--)500mA, IB=(--)10mA IC=(--)300mA, IB=(--)6mA VBE(sat) IC=(--)500mA, IB=(--)10mA Base-to-Emitter Saturation Voltage Collector-to-Base Breakdown Voltage V(BR)CBO IC=(--)10µA, IE=0 V(BR)CES IC=(--)100µA, RBE=0 Collector-to-Emitter Breakdown Voltage V(BR)CEO Emitter-to-Base Breakdown Voltage V(BR)EBO IC=(--)1mA, RBE=∞ IE=(--)10µA, IC=0 mV 130 190 mV (--145) (--220) mV 90 135 mV (--)0.81 (--)1.2 V V 80 V (--50) V 80 V (--)50 V (--)5 Turn-ON Time ton See specified test circuit. Storage Time tstg See specified test circuit. tf See specified test circuit. Package Dimensions pF (--430) (--50) Collector-to-Emitter Breakdown Voltage Fall Time MHz (9)6 Collector-to-Emitter Saturation Voltage VCE(sat)2 Unit max V 35 ns (170) ns 330 ns (30)40 ns Switching Time Test Circuit unit : mm (typ) 7015A-003 0.6 2.9 PW=20µs DC≤1% 0.15 3 IB1 IB2 100µF + 470µF 2 0.95 1 : Base 2 : Emitter 3 : Collector 0.4 VBE= --5V VCC=25V 20IB1= --20IB2=IC=500mA 0.9 0.2 0.6 RL + 50Ω 1 (For PNP, the polarity is reversed.) OUTPUT RB VR 0.05 1.6 2.8 0.2 INPUT SANYO : CPH3 IC -- VCE A m --20 --30 40mA --600 --4mA --400 --2mA --200 IB=0mA 0 --0.2 --0.4 --0.6 --0.8 Collector-to-Emitter Voltage, VCE -- V --1.0 IT01643 800 Collector Current, IC -- A A --10m --8mA --6mA 0 IC -- VCE 1000 10mA 8mA 30mA 20mA mA --5 0 --800 Collector Current, IC -- A 0 --4 mA 50mA CPH3116 mA --1000 6mA 4mA 600 2mA 400 200 IB=0mA CPH3216 0 0 0.2 0.4 0.6 0.8 1.0 Collector-to-Emitter Voltage, VCE -- V IT01644 No.6405-2/5 CPH3116 / CPH3216 IC -- VBE --1.0 0.8 --0.6 --0.5 --0.4 --0.3 --0.1 0.6 0.5 0.4 0.3 0.2 0.1 0 0 0 --0.2 --0.4 --0.6 --0.8 --1.0 Base-to-Emitter Voltage, VBE -- V 0 --1.2 5 DC Current Gain, hFE 3 --25°C 25°C 100 7 5 2 3 5 7 --1.0 Collector Current, IC -- A 2 5 10 0.01 3 3 5 7 2 1000 7 5 3 2 100 7 5 3 5 7 1.0 2 3 IT01648 f T -- IC CPH3216 VCE=10V 3 Gain-Bandwidth Product, f T -- MHz CPH3116 VCE= --10V 2 0.1 Collector Current, IC -- A 5 3 3 2 --0.01 2 IT01647 f T -- IC 5 25°C 7 2 7 --0.1 --25°C 100 2 5 1.2 IT01646 CPH3216 VCE=2V Ta=75°C 2 3 3 1.0 3 3 2 0.8 7 Ta=75°C 10 --0.01 0.6 hFE -- IC 1000 7 2 0.4 Base-to-Emitter Voltage, VBE -- V CPH3116 VCE= --2V 5 0.2 IT01645 hFE -- IC 1000 DC Current Gain, hFE 0.7 C 25°C --25°C --0.7 Ta=7 5° Collector Current, IC -- A --0.8 --0.2 Gain-Bandwidth Product, f T -- MHz CPH3216 VCE=2V 0.9 Ta=7 5°C 25°C --25°C Collector Current, IC -- A --0.9 2 1000 7 5 3 2 100 7 5 3 2 3 5 7 --0.1 2 3 5 7 --1.0 Collector Current, IC -- A 2 2 0.01 3 2 3 5 3 2 10 7 5 3 3 5 7 2 1.0 3 IT01650 CPH3216 f=1MHz 7 Output Capacitance, Cob -- pF 5 2 0.1 Cob -- VCB 100 CPH3116 f=1MHz 7 7 Collector Current, IC -- A IT01649 Cob -- VCB 100 Output Capacitance, Cob -- pF IC -- VBE 1.0 CPH3116 VCE= --2V 5 3 2 10 7 5 3 2 2 5 7 --0.1 2 3 5 7 --1.0 2 3 5 7 --10 2 3 Collector-to-Base Voltage, VCB -- V 5 7 --100 IT01651 5 7 0.1 2 3 5 7 1.0 2 3 5 7 10 2 3 Collector-to-Base Voltage, VCB -- V 5 7 100 IT01652 No.6405-3/5 CPH3116 / CPH3216 VCE(sat) -- IC 5 3 2 --0.1 C 75° Ta= 5 3 C 25° --25° C 2 --0.01 --0.01 2 3 5 7 2 --0.1 3 5 Collector Current, IC -- A 2 5°C --0.1 7 Ta= 7 25° C 5 --25° C 3 2 3 5 7 3 2 --0.1 5 Collector Current, IC -- A Base-to-Emitter Saturation Voltage, VBE(sat) -- V 5 3 2 Ta= --25°C 7 75°C 25°C 3 2 --0.1 --0.01 2 3 5 7 2 --0.1 3 5 Collector Current, IC -- A 10 7 5 ICP=3A IC=1A 1m s 10 DC m 10 s op 0m s er ati on Ta=25°C Single pulse Mounted on a ceramic board (600mm2✕0.8mm) For PNP, minus sign is omitted. 2 3 2 3 5 7 2 0.1 3 5 7 1.0 IT01654 VCE(sat) -- IC CPH3216 IC / IB=50 5 3 2 0.1 5°C 7 7 Ta= 5 25° C C --25° 3 2 2 3 5 7 2 0.1 3 5 7 1.0 IT01656 VBE(sat) -- IC CPH3216 IC / IB=50 5 3 2 1.0 Ta= --25°C 7 5 75°C 25°C 3 2 2 3 5 7 2 0.1 3 5 7 1.0 IT01658 PC -- Ta 1.4 CPH3116 / CPH3216 1.2 0.1 7 5 0.01 0.1 C Collector Current, IC -- A CPH3116 / CPH3216 2 2 °C 25 --25° 0.1 0.01 ASO 3 3 2 7 --1.0 IT01657 s 0µ µs 0 50 1.0 7 5 5°C 7 Ta= 3 Collector Current, IC -- A 7 10 3 2 5 10 7 Collector Current, IC -- A --1.0 IT01655 CPH3116 IC / IB=50 5 7 0.01 0.01 7 VBE(sat) -- IC --10 --1.0 0.1 7 3 2 2 1.0 CPH3116 IC / IB=50 --0.01 --0.01 3 Collector Current, IC -- A Collector-to-Emitter Saturation Voltage, VCE(sat) -- V 5 --1.0 IT01653 Base-to-Emitter Saturation Voltage, VBE(sat) -- V Collector-to-Emitter Saturation Voltage, VCE(sat) -- V 7 5 0.01 0.01 7 VCE(sat) -- IC --1.0 CPH3216 IC / IB=20 7 Collector Dissipation, PC -- W Collector-to-Emitter Saturation Voltage, VCE(sat) -- V 7 7 VCE(sat) -- IC 1.0 CPH3116 IC / IB=20 Collector-to-Emitter Saturation Voltage, VCE(sat) -- V --1.0 5 7 1.0 2 3 5 7 10 2 3 Collector-to-Emitter Voltage, VCE -- V 1.0 Mo 0.9 un 0.8 ted on ac era mi 0.6 cb 0.4 oa rd (60 0m m2 ✕0 .8m 0.2 m) 0 5 7 100 IT01659 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 IT01660 No.6405-4/5 CPH3116 / CPH3216 Specifications of any and all SANYO Semiconductor products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Semiconductor Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. 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Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. SANYO Semiconductor believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of August, 2006. Specifications and information herein are subject to change without notice. PS No.6405-5/5