CHENDA GS2GBF Surface mount general purpose silicon rectifier Datasheet

GS2ABF THRU GS2MBF
SURFACE MOUNT GENERAL PURPOSE SILICON RECTIFIER
Reverse Voltage - 50 to 1000 Volts
SMBF
FEATURES
Cathode Band
Top View
0.146(3.70)
0.138(3.50)
Forward Current - 2.0 Amperes
For surface mounted applications
Low profile package
Glass Passivated Chip Junction
Easy to pick and place
Lead free in comply with EU RoHS 2011/65/EU diretives
0.086(2.20)
0.075(1.90)
0.173(4.4)
0.165(4.2)
0.010(0.26)
0.0071(0.18)
0.051(1.30)
0.043(1.10)
MECHANICAL DATA
0.051(1.30)
0.039(1.0)
Case: JEDEC SMBF molded plastic body
Terminals: leads solderable per MIL-STD-750,
Method 2026
Mounting Position: Any
Weight:57mg/0.002oz
0.216(5.5)
0.200(5.1)
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 C ambient temperature unless otherwise specified.
Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%.
MDD Catalog Number
SYMBOLS GS2ABF GS2BBF GS2DBF GS2GBF GS2JBF GS2KBF GS2MBF
Marking code
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
at TL=65 C
Peak forward surge current
8.3ms single half sine-wave superimposed on
rated load (JEDEC Method)
Maximum instantaneous forward voltage at 2.0A
Maximum DC reverse current
TA=25 C
at rated DC blocking voltage
TA=125 C
Typical junction capacitance (NOTE 1)
Typical thermal resistance (NOTE 2)
VRRM
VRMS
VDC
S2AB
S2BB
S2DB
S2GB
S2JB
S2KB
S2MB
50
35
50
100
70
100
200
140
200
400
280
400
600
420
600
800
560
800
1000
700
1000
UNITS
VOLTS
VOLTS
VOLTS
I(AV)
2.0
Amps
IFSM
60
Amps
VF
1.1
Volts
IR
5.0
100.0
µA
CJ
30
pF
RθJA
55
C/W
Operating junction and storage temperature range TJ,TSTG
Note: 1.Measured at 1MHz and applied reverse voltage of 4.0V D.C.
2.P.C.B. mounted with 0.5x0.5”(12.7x12.7mm) copper pad areas
-55 to +150
C
RATINGS AND CHARACTERISTIC CURVES GS2ABF THRU GS2MBF
Fig.2 Typical Reverse Characteristics
2.5
100LFM
2.0
1.5
1.0
0.5
Single phase half-wave 60 Hz
resistive or inductive load
0.0
25
50
75
100
125
150
175
Instaneous Reverse Current(μ A)
Average Forward Current (A)
Fig.1 Forward Current Derating Curve
100
T J =125°C
10
1.0
T J =25°C
0.1
00
Ambient Temperature (°C)
20
40
60
80
100
120
140
percent of Rated Peak Reverse Voltage (%)
10
Junction Capacitance ( pF)
Instaneous Forward Current (A)
Fig.3 Typical Instaneous Forward
Characteristics
T J =25°C
1.0
0.1
pulse with 300μs
1% duty cycle
0.01
0.0
100
T J =25°C
10
1
0.5
1.0
1.5
2.0
2.5
0.1
1.0
Peak Forward Surage Current (A)
Fig.6 Maximum Non-Repetitive Peak
Forward Surage Current
60
50
40
30
20
8.3 ms Single Half Sine Wave
(JEDEC Method)
10
00
1
10
10
Reverse Voltage (V)
Instaneous Forward Voltage (V)
100
Number of Cycles
The cruve graph is for reference only, can't be the basis for judgment(曲线图仅供参考)!
100
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