BLP8G27-10
Power LDMOS transistor
Rev. 1 — 24 August 2015
Product data sheet
1. Product profile
1.1 General description
10 W plastic LDMOS power transistor for base station applications at frequencies from
700 MHz to 2700 MHz.
Table 1.
Application performance (multiple frequencies)
Typical RF performance at Tcase = 25 C; IDq = 110 mA; in a class-AB application circuit.
f
(MHz)
(mA)
(V)
(dBm)
(dB)
(%)
(dBc)
Pulsed CW
2700
110
28
33
17
19
-
2-carrier W-CDMA [1]
2700
110
28
33
17
22
47.3
[1]
IDq
VDS
PL(AV)
Gp
D
Test signal
ACPR5M
Test signal: 2-carrier W-CDMA; carrier spacing = 5 MHz. PAR = 8.4 dB at 0.01 % probability on CCDF.
1.2 Features and benefits
High efficiency
Excellent ruggedness
Designed for broadband operation
Excellent thermal stability
High power gain
Integrated ESD protection
Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.3 Applications
CDMA
W-CDMA
GSM EDGE
MC-GSM
LTE
WiMAX
BLP8G27-10
NXP Semiconductors
Power LDMOS transistor
2. Pinning information
Table 2.
Pinning
Pin
Description
1, 2, 7, 8, 9, 10, 15, 16
n.c.
3, 4, 5, 6
gate
11, 12, 13, 14
drain
exposed die-pad
source
Graphic symbol [1]
Simplified outline
[2]
H[SRVHG
GLHSDG
7UDQVSDUHQWWRSYLHZ
[1]
To be used in single ended applications only.
[2]
Connected to flange.
DDD
3. Ordering information
Table 3.
Ordering information
Type number
Package
Name
BLP8G27-10
Description
Version
HVSON16 plastic thermal enhanced very thin small outline
SOT1371-1
package; no leads;16 terminals; body 4 6 0.85 mm
4. Limiting values
Table 4.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
VDS
Conditions
Min
Max
Unit
drain-source voltage
-
65
V
VGS
gate-source voltage
0.5
+13
V
Tstg
storage temperature
65
+150
C
Tj
junction temperature
-
225
C
5. Thermal characteristics
Table 5.
Thermal characteristics
Symbol Parameter
Rth(j-c)
BLP8G27-10
Product data sheet
Conditions
thermal resistance from junction to case Tcase = 80 C; PL = 2 W
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 24 August 2015
Typ
Unit
3.2
K/W
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Power LDMOS transistor
6. Characteristics
Table 6.
DC characteristics
Tj = 25 C; unless otherwise specified.
Symbol Parameter
Conditions
Min
Typ
Max
Unit
V(BR)DSS drain-source breakdown
voltage
VGS = 0 V; ID = 0.18 mA
65
-
-
V
VGS(th)
gate-source threshold voltage
VDS = 10 V; ID = 18 mA
1.5
1.9
2.3
V
IDSS
drain leakage current
VGS = 0 V; VDS = 28 V
1.4
-
+1.4
A
IDSX
drain cut-off current
VGS = VGS(th) + 3.75 V
-
3.2
-
A
IGSS
gate leakage current
VGS = 11 V; VDS = 0 V
-
-
140
nA
gfs
forward transconductance
VDS = 10 V; ID = 18 mA
-
160
-
mS
RDS(on)
drain-source on-state
resistance
VGS = VGS(th) + 3.75 V;
VDS = 10 V; ID = 630 mA
-
1000
-
m
Table 7.
RF characteristics
A derivative functional RF test is performed in production. The performance as mentioned below is
verified by design and characterization in an NXP class-AB application board.
Test signal: pulsed CW; = 10%; tp = 100 s; VDS = 28 V; IDq = 110 mA; Tcase = 25 C; f = 2140 MHz
BLP8G27-10
Product data sheet
Symbol Parameter
Conditions
Min
Typ
Max
Unit
Gp
power gain
PL(AV) = 2 W
16
17
-
dB
D
drain efficiency
PL(AV) = 2 W
17
19
-
%
PL(1dB)
output power at 1 dB gain compression
10
-
-
W
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 24 August 2015
© NXP Semiconductors N.V. 2015. All rights reserved.
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BLP8G27-10
NXP Semiconductors
Power LDMOS transistor
7. Application information
7.1 Application circuit
&
&
5
&
&
&
5
&
&
&
&
&
&
4
&
&
&
%/3*
5%
&
&
*
DDD
Printed-Circuit Board (PCB): Rogers RO4350B; r = 3.5; thickness = 0.508 mm; thickness copper
plating = 35 m.
See Table 8 for list of components.
Fig 1.
Component layout
Table 8.
List of components
See Figure 1 for component layout.
BLP8G27-10
Product data sheet
Component
Description
Value
Remarks
C1
multilayer ceramic chip capacitor
10 F
Murata
C2
multilayer ceramic chip capacitor
1 F
Murata
C3
multilayer ceramic chip capacitor
15 pF
ATC 600F
C4
multilayer ceramic chip capacitor
2 pF
ATC 600F
C5
multilayer ceramic chip capacitor
1.3 pF
ATC 600F
C6
multilayer ceramic chip capacitor
0.5 pF
ATC 600F
C7
multilayer ceramic chip capacitor
1.8 pF
ATC 600F
C8
multilayer ceramic chip capacitor
0.3 pF
ATC 600F
C9
multilayer ceramic chip capacitor
0.9 pF
ATC 600F
R1
chip resistor
5.1
R2
chip resistor
0
Q1
transistor
-
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 24 August 2015
BLP8G27-10
© NXP Semiconductors N.V. 2015. All rights reserved.
4 of 12
BLP8G27-10
NXP Semiconductors
Power LDMOS transistor
7.2 Graphical data
7.2.1 Pulsed CW
DDD
*S
G%
*S
Ș'
DDD
Ș'
Ș'
*S
G%
*S
Ș'
3/ :
VDS = 28 V; IDq = 110 mA; Tcase = 25 C; = 10 %;
tp = 100 s.
(1) IDq = 90 mA
(2) f = 2600 MHz
(2) IDq = 110 mA
(3) f = 2700 MHz
(3) IDq = 130 mA
Power gain and drain efficiency as function of
output power; typical values
Fig 3.
3/ :
Power gain and drain efficiency as function of
output power; typical values
DDD
*S
*S
G%
VDS = 28 V; Tcase = 25 C; f = 2600 MHz; = 10 %;
tp = 100 s.
(1) f = 2500 MHz
Fig 2.
Ș'
Ș'
3/ :
VDS = 28 V; IDq = 110 mA; f = 2600 MHz; = 10 %; tp = 100 s.
(1) Tcase = 37 C
(2) Tcase = +25 C
(3) Tcase = +85 C
Fig 4.
Power gain and drain efficiency as function of output power; typical values
BLP8G27-10
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 24 August 2015
© NXP Semiconductors N.V. 2015. All rights reserved.
5 of 12
BLP8G27-10
NXP Semiconductors
Power LDMOS transistor
7.2.2 2-Carrier W-CDMA
DDD
*S
G%
Ș'
*S
Ș'
3/ :
VDS = 28 V; IDq = 110 mA; Tcase = 25 C; carrier spacing = 5 MHz; 46 % clipping; PAR = 8.4 dB at 0.01 % probability on CCDF.
(1) f = 2500 MHz
(2) f = 2600 MHz
(3) f = 2700 MHz
Fig 5.
Power gain and drain efficiency as function of output power; typical values
DDD
$&350
G%F
DDD
$&350
G%F
3/ $9 :
VDS = 28 V; IDq = 110 mA; Tcase = 25 C;
carrier spacing = 5 MHz; 46 % clipping; PAR = 8.4 dB at
0.01 % probability on CCDF.
(1) Tcase = 37 C
(2) f = 2600 MHz
(2) Tcase = +25 C
(3) f = 2700 MHz
(3) Tcase = +85 C
Adjacent channel power ratio (5 MHz) as a
function of average output power; typical
values
BLP8G27-10
Product data sheet
3/ $9 :
VDS = 28 V; IDq = 110 mA; f = 2600 MHz;
carrier spacing = 5 MHz; 46 % clipping; PAR = 8.4 dB at
0.01 % probability on CCDF.
(1) f = 2500 MHz
Fig 6.
Fig 7.
Adjacent channel power ratio (5 MHz) as a
function of average output power; typical
values
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 24 August 2015
© NXP Semiconductors N.V. 2015. All rights reserved.
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BLP8G27-10
NXP Semiconductors
Power LDMOS transistor
8. Test information
8.1 Ruggedness in class-AB operation
The BLP8G27-10 is capable of withstanding a load mismatch corresponding to
VSWR = 10 : 1 through all phases under the following conditions: VDS = 28 V;
IDq = 110 mA; PL = 2 W; frequency from 700 MHz to 2700 MHz.
BLP8G27-10
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 24 August 2015
© NXP Semiconductors N.V. 2015. All rights reserved.
7 of 12
BLP8G27-10
NXP Semiconductors
Power LDMOS transistor
9. Package outline
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Package outline SOT1371-1 (HVSON16)
BLP8G27-10
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 24 August 2015
© NXP Semiconductors N.V. 2015. All rights reserved.
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NXP Semiconductors
Power LDMOS transistor
10. Handling information
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Observe precautions for handling
electrostatic sensitive devices.
Such precautions are described in the ANSI/ESD S20.20, IEC/ST 61340-5, JESD625-A or
equivalent standards.
11. Abbreviations
Table 9.
Abbreviations
Acronym
Description
CCDF
Complementary Cumulative Distribution Function
CDMA
Code Division Multiple Access
CW
Continuous Wave
EDGE
Enhanced Data rates for GSM Evolution
ESD
ElectroStatic Discharge
GSM
Global System for Mobile Communication
LDMOS
Laterally Diffused Metal-Oxide Semiconductor
LTE
Long Term Evolution
MC-GSM
Multi Carrier GSM
PAR
Peak-to-Average Ratio
VSWR
Voltage Standing-Wave Ratio
W-CDMA
Wideband Code Division Multiple Access
WiMAX
Worldwide Interoperability for Microwave Access
12. Revision history
Table 10.
Revision history
Document ID
Release date
Data sheet status
Change notice
Supersedes
BLP8G27-10 v.1
20150824
Product data sheet
-
-
BLP8G27-10
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 24 August 2015
© NXP Semiconductors N.V. 2015. All rights reserved.
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NXP Semiconductors
Power LDMOS transistor
13. Legal information
13.1 Data sheet status
Document status[1][2]
Product status[3]
Definition
Objective [short] data sheet
Development
This document contains data from the objective specification for product development.
Preliminary [short] data sheet
Qualification
This document contains data from the preliminary specification.
Product [short] data sheet
Production
This document contains the product specification.
[1]
Please consult the most recently issued document before initiating or completing a design.
[2]
The term ‘short data sheet’ is explained in section “Definitions”.
[3]
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
13.2 Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
Product specification — The information and data provided in a Product
data sheet shall define the specification of the product as agreed between
NXP Semiconductors and its customer, unless NXP Semiconductors and
customer have explicitly agreed otherwise in writing. In no event however,
shall an agreement be valid in which the NXP Semiconductors product is
deemed to offer functions and qualities beyond those described in the
Product data sheet.
13.3 Disclaimers
Limited warranty and liability — Information in this document is believed to
be accurate and reliable. However, NXP Semiconductors does not give any
representations or warranties, expressed or implied, as to the accuracy or
completeness of such information and shall have no liability for the
consequences of use of such information. NXP Semiconductors takes no
responsibility for the content in this document if provided by an information
source outside of NXP Semiconductors.
In no event shall NXP Semiconductors be liable for any indirect, incidental,
punitive, special or consequential damages (including - without limitation - lost
profits, lost savings, business interruption, costs related to the removal or
replacement of any products or rework charges) whether or not such
damages are based on tort (including negligence), warranty, breach of
contract or any other legal theory.
Notwithstanding any damages that customer might incur for any reason
whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards
customer for the products described herein shall be limited in accordance
with the Terms and conditions of commercial sale of NXP Semiconductors.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
BLP8G27-10
Product data sheet
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in life support, life-critical or
safety-critical systems or equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors and its suppliers accept no liability for
inclusion and/or use of NXP Semiconductors products in such equipment or
applications and therefore such inclusion and/or use is at the customer’s own
risk.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Customers are responsible for the design and operation of their applications
and products using NXP Semiconductors products, and NXP Semiconductors
accepts no liability for any assistance with applications or customer product
design. It is customer’s sole responsibility to determine whether the NXP
Semiconductors product is suitable and fit for the customer’s applications and
products planned, as well as for the planned application and use of
customer’s third party customer(s). Customers should provide appropriate
design and operating safeguards to minimize the risks associated with their
applications and products.
NXP Semiconductors does not accept any liability related to any default,
damage, costs or problem which is based on any weakness or default in the
customer’s applications or products, or the application or use by customer’s
third party customer(s). Customer is responsible for doing all necessary
testing for the customer’s applications and products using NXP
Semiconductors products in order to avoid a default of the applications and
the products or of the application or use by customer’s third party
customer(s). NXP does not accept any liability in this respect.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those given in
the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
Terms and conditions of commercial sale — NXP Semiconductors
products are sold subject to the general terms and conditions of commercial
sale, as published at http://www.nxp.com/profile/terms, unless otherwise
agreed in a valid written individual agreement. In case an individual
agreement is concluded only the terms and conditions of the respective
agreement shall apply. NXP Semiconductors hereby expressly objects to
applying the customer’s general terms and conditions with regard to the
purchase of NXP Semiconductors products by customer.
No offer to sell or license — Nothing in this document may be interpreted or
construed as an offer to sell products that is open for acceptance or the grant,
conveyance or implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 24 August 2015
© NXP Semiconductors N.V. 2015. All rights reserved.
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Power LDMOS transistor
Export control — This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
authorization from competent authorities.
Non-automotive qualified products — Unless this data sheet expressly
states that this specific NXP Semiconductors product is automotive qualified,
the product is not suitable for automotive use. It is neither qualified nor tested
in accordance with automotive testing or application requirements. NXP
Semiconductors accepts no liability for inclusion and/or use of
non-automotive qualified products in automotive equipment or applications.
In the event that customer uses the product for design-in and use in
automotive applications to automotive specifications and standards, customer
(a) shall use the product without NXP Semiconductors’ warranty of the
product for such automotive applications, use and specifications, and (b)
whenever customer uses the product for automotive applications beyond
NXP Semiconductors’ specifications such use shall be solely at customer’s
own risk, and (c) customer fully indemnifies NXP Semiconductors for any
liability, damages or failed product claims resulting from customer design and
use of the product for automotive applications beyond NXP Semiconductors’
standard warranty and NXP Semiconductors’ product specifications.
Translations — A non-English (translated) version of a document is for
reference only. The English version shall prevail in case of any discrepancy
between the translated and English versions.
13.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
14. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
BLP8G27-10
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 24 August 2015
© NXP Semiconductors N.V. 2015. All rights reserved.
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NXP Semiconductors
BLP8G27-10
Power LDMOS transistor
15. Contents
1
1.1
1.2
1.3
2
3
4
5
6
7
7.1
7.2
7.2.1
7.2.2
8
8.1
9
10
11
12
13
13.1
13.2
13.3
13.4
14
15
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
General description . . . . . . . . . . . . . . . . . . . . . 1
Features and benefits . . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Pinning information . . . . . . . . . . . . . . . . . . . . . . 2
Ordering information . . . . . . . . . . . . . . . . . . . . . 2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2
Thermal characteristics . . . . . . . . . . . . . . . . . . 2
Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Application information. . . . . . . . . . . . . . . . . . . 4
Application circuit . . . . . . . . . . . . . . . . . . . . . . . 4
Graphical data . . . . . . . . . . . . . . . . . . . . . . . . . 5
Pulsed CW . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
2-Carrier W-CDMA . . . . . . . . . . . . . . . . . . . . . . 6
Test information . . . . . . . . . . . . . . . . . . . . . . . . . 7
Ruggedness in class-AB operation . . . . . . . . . 7
Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 8
Handling information. . . . . . . . . . . . . . . . . . . . . 9
Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . 9
Legal information. . . . . . . . . . . . . . . . . . . . . . . 10
Data sheet status . . . . . . . . . . . . . . . . . . . . . . 10
Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Contact information. . . . . . . . . . . . . . . . . . . . . 11
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP Semiconductors N.V. 2015.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
Date of release: 24 August 2015
Document identifier: BLP8G27-10