IPA70R750P7S MOSFET 700VCoolMOSªP7PowerTransistor PG-TO220FP CoolMOS™isarevolutionarytechnologyforhighvoltagepower MOSFETs,designedaccordingtothesuperjunction(SJ)principleand pioneeredbyInfineonTechnologies. ThelatestCoolMOS™P7isanoptimizedplatformtailoredtotargetcost sensitiveapplicationsinconsumermarketssuchascharger,adapter, lighting,TV,etc. ThenewseriesprovidesallthebenefitsofafastswitchingSuperjunction MOSFET,combinedwithanexcellentprice/performanceratioandstateof theartease-of-uselevel.Thetechnologymeetshighestefficiency standardsandsupportshighpowerdensity,enablingcustomersgoing towardsveryslimdesigns. Drain Pin 2, Tab Features •ExtremelylowlossesduetoverylowFOMRDS(on)*QgandRDS(on)*Eoss •Excellentthermalbehavior •IntegratedESDprotectiondiode •Lowswitchinglosses(Eoss) •Productvalidationacc.JEDECStandard Gate Pin 1 Source Pin 3 Benefits •Costcompetitivetechnology •Lowertemperature •HighESDruggedness •Enablesefficiencygainsathigherswitchingfrequencies •Enableshighpowerdensitydesignsandsmallformfactors Potentialapplications RecommendedforFlybacktopologiesforexampleusedinChargers, Adapters,LightingApplications,etc. Pleasenote:ForMOSFETparallelingtheuseofferritebeadsonthegate orseperatetotempolesisgenerallyrecommended. Table1KeyPerformanceParameters Parameter Value Unit VDS @ Tj=25°C 700 V RDS(on),max 0.75 Ω Qg,typ 8.3 nC ID,pulse 15.4 A Eoss @ 400V 0.9 µJ V(GS)th,typ 3 V ESD class (HBM) 1C Type/OrderingCode Package IPA70R750P7S PG-TO 220 FullPAK Final Data Sheet Marking 70S750P7 1 RelatedLinks see Appendix A Rev.2.1,2018-02-12 700VCoolMOSªP7PowerTransistor IPA70R750P7S TableofContents Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Test Circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Appendix A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Final Data Sheet 2 Rev.2.1,2018-02-12 700VCoolMOSªP7PowerTransistor IPA70R750P7S 1Maximumratings atTj=25°C,unlessotherwisespecified Table2Maximumratings Parameter Symbol Continuous drain current1) Values Unit Note/TestCondition 6.5 4.0 A TC = 20°C TC = 100°C - 15.4 A TC=25°C - - 2.0 A measured with standard leakage inductance of transformer of 7µH dv/dt - - 100 V/ns VDS=0...400V Gate source voltage VGS -16 -30 - 16 30 V static; AC (f>1 Hz) Power dissipation Ptot - - 21.2 W TC=25°C Operating and storage temperature Tj,Tstg -40 - 150 °C - Continuous diode forward current IS - - 3.5 A TC=25°C IS,pulse - - 15.4 A TC = 25°C dv/dt - - 1 V/ns VDS=0...400V,ISD<=IS,Tj=25°C Maximum diode commutation speed dif/dt - - 50 A/µs VDS=0...400V,ISD<=IS,Tj=25°C Insulation withstand voltage VISO - - 2500 V Vrms, TC=25°C, t=1min Unit Note/TestCondition Min. Typ. Max. ID - - Pulsed drain current2) ID,pulse - Application (Flyback) relevant avalanche current, single pulse3) IAS MOSFET dv/dt ruggedness 2) Diode pulse current 4) Reverse diode dv/dt 4) 2Thermalcharacteristics Table3Thermalcharacteristics Parameter Symbol Thermal resistance, junction Values Min. Typ. Max. RthJC - - 5.9 °C/W - Thermal resistance, junction - ambient RthJA - - 80 °C/W leaded Thermal resistance, junction - ambient RthJA for SMD version - - - °C/W n.a. Soldering temperature, wavesoldering only allowed at leads - - 260 °C Tsold 1.6 mm (0.063 in.) from case for 10s 1) DPAK / IPAK equivalent. Limited by Tj max. Tj = 20°C. Maximum duty cycle D=0.5 Pulse width tp limited by Tj,max 3) Proven during verification test. For explanation please read AN - CoolMOSTM 700V P7. 4) VDClink=400V;VDS,peak<V(BR)DSS;identicallowsideandhighsideswitchwithidenticalRG 2) Final Data Sheet 3 Rev.2.1,2018-02-12 700VCoolMOSªP7PowerTransistor IPA70R750P7S 3Electricalcharacteristics Table4Staticcharacteristics Parameter Symbol Drain-source breakdown voltage Values Unit Note/TestCondition - V VGS=0V,ID=1mA 3 3.50 V VDS=VGS,ID=0.07mA - 10 1 - µA VDS=700V,VGS=0V,Tj=25°C VDS=700V,VGS=0V,Tj=150°C - - 1 µA VGS=20V,VDS=0V Min. Typ. Max. V(BR)DSS 700 - Gate threshold voltage V(GS)th 2.50 Zero gate voltage drain current IDSS Gate-source leakage current incl. Zener IGSS diode Drain-source on-state resistance RDS(on) - 0.62 1.40 0.75 - Ω VGS=10V,ID=1.4A,Tj=25°C VGS=10V,ID=1.4A,Tj=150°C Gate resistance RG - 10 - Ω f=1MHz,opendrain Unit Note/TestCondition Table5Dynamiccharacteristics Parameter Symbol Input capacitance Values Min. Typ. Max. Ciss - 306 - pF VGS=0V,VDS=400V,f=250kHz Output capacitance Coss - 5.1 - pF VGS=0V,VDS=400V,f=250kHz Effective output capacitance, energy related1) Co(er) - 13 - pF VGS=0V,VDS=0...400V Effective output capacitance, time related2) Co(tr) - 150 - pF ID=constant,VGS=0V,VDS=0...400V Turn-on delay time td(on) - 12 - ns VDD=400V,VGS=13V,ID=1.0A, RG=5.3Ω Rise time tr - 5.0 - ns VDD=400V,VGS=13V,ID=1.0A, RG=5.3Ω Turn-off delay time td(off) - 60 - ns VDD=400V,VGS=13V,ID=1.0A, RG=5.3Ω Fall time tf - 27 - ns VDD=400V,VGS=13V,ID=1.0A, RG=5.3Ω Unit Note/TestCondition Table6Gatechargecharacteristics Parameter Symbol Gate to source charge Values Min. Typ. Max. Qgs - 1.3 - nC VDD=400V,ID=1.0A,VGS=0to10V Gate to drain charge Qgd - 2.9 - nC VDD=400V,ID=1.0A,VGS=0to10V Gate charge total Qg - 8.3 - nC VDD=400V,ID=1.0A,VGS=0to10V Gate plateau voltage Vplateau - 4.4 - V VDD=400V,ID=1.0A,VGS=0to10V 1) Co(er)isafixedcapacitancethatgivesthesamestoredenergyasCosswhileVDSisrisingfrom0to400V Co(tr)isafixedcapacitancethatgivesthesamechargingtimeasCosswhileVDSisrisingfrom0to400V 2) Final Data Sheet 4 Rev.2.1,2018-02-12 700VCoolMOSªP7PowerTransistor IPA70R750P7S Table7Reversediodecharacteristics Parameter Symbol Diode forward voltage Values Unit Note/TestCondition - V VGS=0V,IF=1.5A,Tj=25°C 200 - ns VR=400V,IF=1.0A,diF/dt=50A/µs - 0.7 - µC VR=400V,IF=1.0A,diF/dt=50A/µs - 8 - A VR=400V,IF=1.0A,diF/dt=50A/µs Min. Typ. Max. VSD - 0.9 Reverse recovery time trr - Reverse recovery charge Qrr Peak reverse recovery current Irrm Final Data Sheet 5 Rev.2.1,2018-02-12 700VCoolMOSªP7PowerTransistor IPA70R750P7S 4Electricalcharacteristicsdiagrams Diagram1:Powerdissipation Diagram2:Safeoperatingarea 102 30 25 1 µs 101 10 µs 100 µs 20 1 ms ID[A] Ptot[W] 100 15 10 ms 10 -1 10 DC 10-2 5 0 0 25 50 75 100 125 10-3 150 100 101 102 TC[°C] 103 VDS[V] Ptot=f(TC) ID=f(VDS);TC=25°C;D=0;parameter:tp Diagram3:Safeoperatingarea Diagram4:Max.transientthermalimpedance 2 101 10 101 1 µs 0.5 10 µs 100 µs 0.2 ZthJC[K/W] 100 ID[A] 1 ms 10 ms 10-1 100 0.1 0.05 0.02 DC 0.01 single pulse 10-2 10-3 100 101 102 103 10-1 10-5 10-4 10-3 VDS[V] ID=f(VDS);TC=80°C;D=0;parameter:tp Final Data Sheet 10-2 10-1 100 tp[s] ZthJC=f(tP);parameter:D=tp/T 6 Rev.2.1,2018-02-12 700VCoolMOSªP7PowerTransistor IPA70R750P7S Diagram5:Typ.outputcharacteristics Diagram6:Typ.outputcharacteristics 20 16 20 V 10 V 18 20 V 14 8V 10 V 7V 16 8V 12 7V 6V 14 10 ID[A] ID[A] 12 6V 10 8 8 5.5 V 6 5.5 V 6 5V 4 5V 4 4.5 V 2 0 2 4.5 V 0 5 10 15 0 20 0 5 10 VDS[V] 15 ID=f(VDS);Tj=25°C;parameter:VGS ID=f(VDS);Tj=125°C;parameter:VGS Diagram7:Typ.drain-sourceon-stateresistance Diagram8:Drain-sourceon-stateresistance 4.0 5V 5.5 V 6V 20 VDS[V] 1.8 6.5 V 1.6 3.5 1.4 3.0 1.2 2.5 RDS(on)[Ω] RDS(on)[Ω] 7V 10 V 2.0 1.0 98% 0.8 typ 1.5 0.6 1.0 0.4 0.5 0.0 0.2 0 2 4 6 8 10 12 14 16 18 0.0 -50 -25 0 25 ID[A] RDS(on)=f(ID);Tj=125°C;parameter:VGS Final Data Sheet 50 75 100 125 150 Tj[°C] RDS(on)=f(Tj);ID=1.4A;VGS=10V 7 Rev.2.1,2018-02-12 700VCoolMOSªP7PowerTransistor IPA70R750P7S Diagram9:Typ.transfercharacteristics Diagram10:Typ.gatecharge 18 10 16 9 25 °C 8 14 7 12 VGS[V] ID[A] 6 10 150 °C 8 120 V 400 V 5 4 6 3 4 2 2 0 1 0 2 4 6 8 10 0 12 0 2 4 VGS[V] 6 8 10 Qgate[nC] ID=f(VGS);VDS=20V;parameter:Tj VGS=f(Qgate);ID=1.0Apulsed;parameter:VDD Diagram11:Forwardcharacteristicsofreversediode Diagram13:Drain-sourcebreakdownvoltage 2 10 840 25 °C 125 °C 820 800 780 101 IF[A] VBR(DSS)[V] 760 100 740 720 700 680 660 640 620 10-1 0.0 0.5 1.0 1.5 2.0 600 -75 -50 -25 VSD[V] 25 50 75 100 125 150 175 Tj[°C] IF=f(VSD);parameter:Tj Final Data Sheet 0 VBR(DSS)=f(Tj);ID=1mA 8 Rev.2.1,2018-02-12 700VCoolMOSªP7PowerTransistor IPA70R750P7S Diagram14:Typ.capacitances Diagram15:Typ.Cossstoredenergy 4 10 2.0 1.8 103 1.6 Ciss 1.4 102 C[pF] Eoss[µJ] 1.2 Coss 101 1.0 0.8 0.6 Crss 100 0.4 0.2 10-1 0 100 200 300 400 500 0.0 0 VDS[V] 200 300 400 500 600 700 VDS[V] C=f(VDS);VGS=0V;f=250kHz Final Data Sheet 100 Eoss=f(VDS) 9 Rev.2.1,2018-02-12 700VCoolMOSªP7PowerTransistor IPA70R750P7S 5TestCircuits Table8Diodecharacteristics Test circuit for diode characteristics Diode recovery waveform Rg1 VDS Rg 2 IF Rg1 = Rg 2 Table9Switchingtimes Switching times test circuit for inductive load Switching times waveform VDS 90% VDS VGS VGS 10% td(on) ton tr td(off) tf toff Table10Unclampedinductiveload Unclamped inductive load test circuit Unclamped inductive waveform V(BR)DS ID VDS VDS Final Data Sheet 10 ID VDS Rev.2.1,2018-02-12 700VCoolMOSªP7PowerTransistor IPA70R750P7S 6PackageOutlines DIMENSIONS DO NOT INCLUDE MOLD FLASH, PROTRUSIONS OR GATE BURRS. DIM A A1 A2 b b1 b2 b3 b4 c D D1 E e e1 N H L L1 Q MILLIMETERS MIN MAX 4.50 4.90 2.34 2.80 2.42 2.86 0.65 0.90 0.95 1.38 1.20 1.50 0.65 1.38 1.20 1.50 0.40 0.63 15.67 16.15 8.97 9.83 10.00 10.65 2.54 (BSC) INCHES MIN 0.177 0.092 0.095 0.026 0.037 0.047 0.026 0.047 0.016 0.617 0.353 0.394 DOCUMENT NO. Z8B00181328 SCALE 0 2.5 0 2.5 5mm EUROPEAN PROJECTION 0.100 (BSC) 5.08 3 28.70 12.78 2.83 3.00 3.15 MAX 0.193 0.110 0.113 0.035 0.054 0.059 0.054 0.059 0.025 0.636 0.387 0.419 0.200 3 29.75 13.75 3.45 3.38 3.50 1.130 0.503 0.111 0.118 0.124 1.171 0.541 0.136 0.133 0.138 ISSUE DATE 29-04-2016 REVISION 01 Figure1OutlinePG-TO220FullPAK,dimensionsinmm/inches Final Data Sheet 11 Rev.2.1,2018-02-12 700VCoolMOSªP7PowerTransistor IPA70R750P7S 7AppendixA Table11RelatedLinks • IFXCoolMOSªP7Webpage:www.infineon.com • IFXDesigntools:www.infineon.com Final Data Sheet 12 Rev.2.1,2018-02-12 700VCoolMOSªP7PowerTransistor IPA70R750P7S RevisionHistory IPA70R750P7S Revision:2018-02-12,Rev.2.1 Previous Revision Revision Date Subjects (major changes since last revision) 2.0 2017-09-15 Release of final version 2.1 2018-02-12 Corrected front page text TrademarksofInfineonTechnologiesAG AURIX™,C166™,CanPAK™,CIPOS™,CoolGaN™,CoolMOS™,CoolSET™,CoolSiC™,CORECONTROL™,CROSSAVE™,DAVE™,DI-POL™,DrBlade™, EasyPIM™,EconoBRIDGE™,EconoDUAL™,EconoPACK™,EconoPIM™,EiceDRIVER™,eupec™,FCOS™,HITFET™,HybridPACK™,Infineon™, ISOFACE™,IsoPACK™,i-Wafer™,MIPAQ™,ModSTACK™,my-d™,NovalithIC™,OmniTune™,OPTIGA™,OptiMOS™,ORIGA™,POWERCODE™, PRIMARION™,PrimePACK™,PrimeSTACK™,PROFET™,PRO-SIL™,RASIC™,REAL3™,ReverSave™,SatRIC™,SIEGET™,SIPMOS™,SmartLEWIS™, SOLIDFLASH™,SPOC™,TEMPFET™,thinQ™,TRENCHSTOP™,TriCore™. TrademarksupdatedAugust2015 OtherTrademarks Allreferencedproductorservicenamesandtrademarksarethepropertyoftheirrespectiveowners. WeListentoYourComments Anyinformationwithinthisdocumentthatyoufeeliswrong,unclearormissingatall?Yourfeedbackwillhelpustocontinuously improvethequalityofthisdocument.Pleasesendyourproposal(includingareferencetothisdocument)to: [email protected] Publishedby InfineonTechnologiesAG 81726München,Germany ©2018InfineonTechnologiesAG AllRightsReserved. LegalDisclaimer Theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics (“Beschaffenheitsgarantie”). Withrespecttoanyexamples,hintsoranytypicalvaluesstatedhereinand/oranyinformationregardingtheapplicationofthe product,InfineonTechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind,includingwithoutlimitation warrantiesofnon-infringementofintellectualpropertyrightsofanythirdparty. Inaddition,anyinformationgiveninthisdocumentissubjecttocustomer’scompliancewithitsobligationsstatedinthis documentandanyapplicablelegalrequirements,normsandstandardsconcerningcustomer’sproductsandanyuseofthe productofInfineonTechnologiesincustomer’sapplications. Thedatacontainedinthisdocumentisexclusivelyintendedfortechnicallytrainedstaff.Itistheresponsibilityofcustomer’s technicaldepartmentstoevaluatethesuitabilityoftheproductfortheintendedapplicationandthecompletenessoftheproduct informationgiveninthisdocumentwithrespecttosuchapplication. Information Forfurtherinformationontechnology,deliverytermsandconditionsandpricespleasecontactyournearestInfineon TechnologiesOffice(www.infineon.com). Warnings Duetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthetypesinquestion, pleasecontactthenearestInfineonTechnologiesOffice. TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystemsand/or automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofInfineonTechnologies,ifa failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationand aerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.Lifesupportdevicesorsystemsare intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.Iftheyfail,itis reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered. Final Data Sheet 13 Rev.2.1,2018-02-12