CYSTEKEC MTE013N10RE3-0-UB-X N-channel enhancement mode power mosfet Datasheet

CYStech Electronics Corp.
Spec. No. : C056E3
Issued Date : 2017.01.12
Revised Date :
Page No. : 1/ 8
N-Channel Enhancement Mode Power MOSFET
MTE013N10RE3
BVDSS
ID@VGS=10V, TC=25°C
ID@VGS=10V, TA=25°C
RDS(ON)@VGS=10V, ID=20A
Features
• Low On Resistance
• Simple Drive Requirement
• Low Gate Charge
• Fast Switching Characteristic
• RoHS compliant package
Symbol
100V
45A
9.6A
13 mΩ(typ)
Outline
MTE013N10RE3
TO-220
G:Gate D:Drain S:Source
GDS
Ordering Information
Device
Package
Shipping
TO-220
MTE013N10RE3-0-UB-X
50 pcs/tube, 20 tubes/box, 4 boxes / carton
(Pb-free lead plating package)
Environment friendly grade : S for RoHS compliant products, G for RoHS
compliant and green compound products
Packing spec, UB : 50 pcs / tube, 20 tubes/box
Product rank, zero for no rank products
Product name
MTE013N10RE3
CYStek Product Specification
Spec. No. : C056E3
Issued Date : 2017.01.12
Revised Date :
Page No. : 2/ 8
CYStech Electronics Corp.
Absolute Maximum Ratings (TC=25°C)
Parameter
Drain-Source Voltage (Note 1)
Gate-Source Voltage
Continuous Drain Current @TC=25°C, VGS=10V
(Note 1)
Continuous Drain Current @TC=100°C, VGS=10V
(Note 1)
Continuous Drain Current @TA=25°C, VGS=10V
(Note 2)
Continuous Drain Current @TA=70°C, VGS=10V
(Note 2)
Pulsed Drain Current @ VGS=10V
Avalanche Current @L=100μH
Single Pulse Avalanche Energy @ L=1mH, ID=27 Amps,
VDD=25V
(Note 4)
Repetitive Avalanche Energy
(Note 3)
TC=25°C
(Note 1)
TC=100°C
(Note 1)
Power Dissipation
TA=25°C
(Note 2)
TA=70°C
(Note 2)
Maximum Temperature for Soldering @ Lead at 0.063 in(1.6mm)
from case for 10 seconds
Maximum Temperature for Soldering @ Package Body for 10
seconds
Operating Junction and Storage Temperature
Symbol
Limits
VDS
VGS
IDM
IAS
100
±20
45*
31.8*
8.2
6.7
180*
53
EAS
364
EAR
7.5
75
37.5
2.1
1.4
ID
IDSM
PD
PDSM
Unit
V
A
mJ
W
TL
300
TPKG
260
Tj, Tstg
-55~+175
°C
*Drain current limited by maximum junction temperature
Thermal Data
Parameter
Thermal Resistance, Junction-to-case, max
Thermal Resistance, Junction-to-ambient, max
(Note 2)
Symbol
RθJC
RθJA
Value
2
58
Unit
°C/W
Note : 1.The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful
in setting the upper dissipation limit for cases where additional heatsinking is used.
2. The value of RθJA is measured with the device mounted on 1 in²FR-4 board with 2 oz. copper, in a still air environment
with TA=25°C. The power dissipation PDSM is based on RθJA and the maximum allowed junction
temperature of 150°C. The value in any given application depends on the user’s specific board design, and the
maximum temperature of 175°C may be used if the PCB allows it.
3. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C. Ratings are based on low frequency
and low duty cycles to keep initial TJ=25°C.
4. 100% tested by conditions of L=0.1mH, IAS=25A, VGS=10V, VDD=50V.
MTE013N10RE3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C056E3
Issued Date : 2017.01.12
Revised Date :
Page No. : 3/ 8
Characteristics (Tj=25°C, unless otherwise specified)
Symbol
Static
BVDSS
∆BVDSS/∆Tj
VGS(th)
*GFS
IGSS
IDSS
Min.
Typ.
Max.
Unit
100
2
-
60
17.4
13
4
±100
1
25
17
V
mV/°C
V
S
nA
36.5
12.1
9.4
26.8
20.4
43.4
10
2882
231
24
-
0.86
34.7
55
45
180
1.2
-
*RDS(ON)
Dynamic
*Qg
*Qgs
*Qgd
*td(ON)
*tr
*td(OFF)
*tf
Ciss
Coss
Crss
Source-Drain Diode
*IS
*ISM
*VSD
*trr
*Qrr
-
Test Conditions
mΩ
VGS=0V, ID=250μA
Reference to 25°C, ID=250μA
VDS = VGS, ID=250μA
VDS =10V, ID=20A
VGS=±20V
VDS =80V, VGS =0V
VDS =80V, VGS =0V, Tj=125°C
VGS =10V, ID=20A
nC
VDD=80V, ID=13A,VGS=10V
ns
VDD=50V, ID=13A, VGS=10V, RG=6Ω
pF
VGS=0V, VDS=50V, f=1MHz
μA
A
V
ns
nC
IS=20A, VGS=0V
VGS=0V, IF=13A, dIF/dt=100A/μs
*Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2%
MTE013N10RE3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C056E3
Issued Date : 2017.01.12
Revised Date :
Page No. : 4/ 8
Typical Characteristics
Brekdown Voltage vs Junction Temperature
Typical Output Characteristics
1.4
100
BVDSS, Normalized Drain-Source
Breakdown Voltage
ID, Drain Current(A)
10V,9V,8V
7V
80
60
6V
40
5 .5V
20
VGS=4.5V
1.2
1
0.8
ID=250μA,
VGS=0V
0.6
5V
0.4
0
0
2
4
6
8
VDS, Drain-Source Voltage(V)
-75 -50 -25
10
Reverse Drain Current vs Source-Drain Voltage
Static Drain-Source On-State resistance vs Drain Current
100
R DS(ON) , Static Drain-Source On-State
Resistance(mΩ)
1.2
VSD, Source-Drain Voltage(V)
VGS=10V
10
1
Tj=25°C
0.8
0.6
Tj=150°C
0.4
0.2
0.1
1
10
ID, Drain Current(A)
0
100
5
10
15
IDR , Reverse Drain Current(A)
20
Drain-Source On-State Resistance vs Junction Tempearture
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
2.8
R DS(ON) , Normalized Static DrainSource On-State Resistance
200
R DS(ON) , Static Drain-Source OnState Resistance(mΩ)
0 25 50 75 100 125 150 175 200
Tj, Junction Temperature(°C)
180
ID=20A
160
140
120
100
80
60
40
20
2.4
VGS=10V, ID=20A
2
1.6
1.2
0.8
0.4
RDS(ON) @Tj=25°C : 13mΩ typ.
0
0
0
MTE013N10RE3
2
4
6
8
VGS, Gate-Source Voltage(V)
10
-75 -50 -25
0 25 50 75 100 125 150 175 200
Tj, Junction Temperature(°C)
CYStek Product Specification
Spec. No. : C056E3
Issued Date : 2017.01.12
Revised Date :
Page No. : 5/ 8
CYStech Electronics Corp.
Typical Characteristics(Cont.)
Threshold Voltage vs Junction Tempearture
Capacitance vs Drain-to-Source Voltage
VGS(th), Normalized Threshold Voltage
10000
Capacitance---(pF)
Ciss
1000
C oss
100
Crss
1.4
1.2
ID=1mA
1
0.8
0.6
ID=250μA
0.4
0.2
10
0
10
20
30
40
VDS, Drain-Source Voltage(V)
-75 -50 -25
50
0
Gate Charge Characteristics
10
VDS=10V
VGS, Gate-Source Voltage(V)
GFS , Forward Transfer Admittance(S)
100
10
VDS=15V
1
0.1
Pulsed
Ta=25°C
0.01
0.001
VDS=20V, 50V, 80V
from left to right
8
6
4
2
ID=13A
0
0.01
0.1
1
ID, Drain Current(A)
10
0
100
RDS(ON)
Limited
ID, Maximum Drain Current(A)
ID, Drain Current(A)
1000
10 μs
100μs
10
1ms
10ms
TC=25°C, Tj=175°C,
VGS=10V,RθJC=2°C/W
single pulse
100ms
DC
0.1
0.1
MTE013N10RE3
1
10
100
VDS, Drain-Source Voltage(V)
4
8
12 16 20 24 28 32
Total Gate Charge---Qg(nC)
36
40
Maximum Drain Current vs Case Temperature
Maximum Safe Operating Area
1
75 100 125 150 175 200
Tj, Junction Temperature(°C)
Forward Transfer Admittance vs Drain Current
100
25 50
1000
60
55
50
45
40
35
30
25
20
15
10
5
0
VGS=10V, RθJC=2°C/W
25
50
75
100 125
150
TC , Case Temperature(°C)
175
200
CYStek Product Specification
Spec. No. : C056E3
Issued Date : 2017.01.12
Revised Date :
Page No. : 6/ 8
CYStech Electronics Corp.
Typical Characteristics(Cont.)
Single Pulse Maximum Power Dissipation
Typical Transfer Characteristics
2000
100
1800
Peak Transient Power (W)
VDS=10V
ID, Drain Current (A)
80
60
40
20
TJ(MAX) =175°C
TC=25°C
RθJC=2°C/W
1600
1400
1200
1000
800
600
400
200
0
0
2
4
6
8
0
0.0001
10
0.001
VGS, Gate-Source Voltage(V)
0.01
0.1
Pulse Width(s)
1
10
Transient Thermal Response Curves
r(t), Normalized Effective Transient Thermal
Resistance
1
D=0.5
1.RθJC (t)=r(t)*RθJC
2.Duty Factor, D=t1/t2
3.TJM-TC=PDM*RθJC(t)
4.RθJC=2 °C/W
0.2
0.1
0.1
0.05
0.02
0.01
Single Pulse
0.01
1.E-05
1.E-04
1.E-03
1.E-02
1.E-01
1.E+00
1.E+01
t1, Square Wave Pulse Duration(s)
MTE013N10RE3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C056E3
Issued Date : 2017.01.12
Revised Date :
Page No. : 7/ 8
Recommended wave soldering condition
Product
Pb-free devices
Peak Temperature
260 +0/-5 °C
Soldering Time
5 +1/-1 seconds
Recommended temperature profile for IR reflow
Profile feature
Average ramp-up rate
(Tsmax to Tp)
Preheat
−Temperature Min(TS min)
−Temperature Max(TS max)
−Time(ts min to ts max)
Time maintained above:
−Temperature (TL)
− Time (tL)
Peak Temperature(TP)
Time within 5°C of actual peak
temperature(tp)
Ramp down rate
Time 25 °C to peak temperature
Sn-Pb eutectic Assembly
Pb-free Assembly
3°C/second max.
3°C/second max.
100°C
150°C
60-120 seconds
150°C
200°C
60-180 seconds
183°C
60-150 seconds
240 +0/-5 °C
217°C
60-150 seconds
260 +0/-5 °C
10-30 seconds
20-40 seconds
6°C/second max.
6 minutes max.
6°C/second max.
8 minutes max.
Note : All temperatures refer to topside of the package, measured on the package body surface.
MTE013N10RE3
CYStek Product Specification
Spec. No. : C056E3
Issued Date : 2017.01.12
Revised Date :
Page No. : 8/ 8
CYStech Electronics Corp.
TO-220 Dimension
Marking:
4
Device Name
E013
N10R
Date Code
□□□□
1
3-Lead TO-220 Plastic Package
CYStek Package Code: E3
2
3
Style: Pin 1.Gate 2.Drain 3.Source
4.Drain
*: Typical
Millimeters
Min.
Max.
4.400
4.600
2.250
2.550
0.710
0.910
1.170
1.370
0.330
0.650
1.200
1.400
10.250
9.910
9.750
8.950
12.650 12.950
DIM
A
A1
b
b1
c
c1
D
E
E1
Inches
Min.
Max.
0.173
0.181
0.089
0.100
0.028
0.036
0.046
0.054
0.013
0.026
0.047
0.055
0.404
0.390
0.384
0.352
0.510
0.498
DIM
e
e1
F
H
h
L
L1
V
Φ
Millimeters
Min.
Max.
2.540*
4.980
5.180
2.650
2.950
8.100
7.900
0.000
0.300
12.900 13.400
2.850
3.250
7/500 REF
3.400
3.800
Inches
Min.
Max.
0.100*
0.196
0.204
0.104
0.116
0.319
0.311
0.000
0.012
0.508
0.528
0.112
0.128
0.295 REF
0.134
0.150
Notes: 1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
• Lead: Pure tin plated.
• Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0.
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
• CYStek reserves the right to make changes to its products without notice.
• CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
MTE013N10RE3
CYStek Product Specification
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