Siemens BAS40-07W Silicon schottky diode preliminary data (general-purpose diode for high-speed switching circuit protection voltage clamping) Datasheet

BAS 40-07W
Silicon Schottky Diode
Preliminary data
3
• General-purpose diode for high-speed switching
4
• Circuit protection
• Voltage clamping
• High-level detecting and mixing
• Available with CECC quality assessment
2
1
VPS05605
BAS 40-07W
Type
Marking Ordering Code
Pin Configuration
BAS 40-07W
47s
1=C1
Q62702-
2=C2
3=A2
Package
4=A1
SOT-343
Maximum Ratings
Parameter
Symbol
Value
Unit
Diode reverse voltage
VR
40
V
Forward current
IF
120
mA
Surge forward current, t ≤ 10ms
I FSM
200
Total power dissipation, T S ≤ 81°C
Ptot
250
mW
Junction temperature
Tj
150
°C
Operating temperature range
T op
- 55 ...+150
Storage temperature
T stg
- 55 ...+150
Maximum Ratings
Junction - ambient
1)
Junction - soldering point
RthJA
≤ 345
RthJS
≤ 275
K/W
1) Package mounted on epoxy pcb 40mm x 40mm x 1.5mm / 6cm 2 Cu
Semiconductor Group
Semiconductor Group
11
Sep-09-1998
1998-11-01
BAS 40-07W
Electrical Characteristics at TA = 25°C, unless otherwise specified.
Symbol
Parameter
Values
Unit
min.
typ.
max.
40
-
-
DC characteristics
Breakdown voltage
V(BR)
V
I (BR) = 10 µA
Reverse current
µA
IR
VR = 30 V
-
-
1
VR = 40 V
-
-
10
Forward voltage
mV
VF
I F = 1 mA
-
310
380
I F = 10 mA
-
450
500
I F = 40 mA
-
720
1000
CT
-
4
5
pF
τ
-
-
100
ps
rf
-
10
-
Ω
AC characteristics
Diode capacitance
VR = 0 V, f = 1 MHz
Charge carrier life time
I F = 25 mA
Differential forward resistance
I F = 10 mA, f = 10 kHz
Semiconductor Group
Semiconductor Group
22
Sep-09-1998
1998-11-01
BAS 40-07W
Forward current IF = f V F)
Reverse current IR = f (VR)
T A = 25°C
TA = Parameter
Diode capacitance CT = f (V R)
f = 1MHz
Differential forward resistance rf = f (IF)
f = 10 kHz
Semiconductor Group
Semiconductor Group
33
Sep-09-1998
1998-11-01
BAS 40-07W
Forward current IF = f (TA*; T S)
* Package mounted on alumina
Semiconductor Group
Semiconductor Group
44
Sep-09-1998
1998-11-01
Similar pages