® MBRF3035CTR thru MBRF30200CTR Pb MBRF3035CTR thru MBRF30200CTR Pb Free Plating Product 30.0 Amperes Insulated Dual Common Anode Schottky Half Bridge Rectifiers ITO-220AB Unit : inch (mm) .189(4.8) .165(4.2) .272(6.9) .248(6.3) .406(10.3) .381(9.7) .134(3.4) .118(3.0) .130(3.3) .114(2.9) .606(15.4) .583(14.8) .112(2.85) .100(2.55) Features Standard MBR matured technology with high reliablity Low forward voltage drop High current capability Low reverse leakage current High surge current capability Automotive Inverters and Solar Inverters Plating Power Supply,SMPS,EPS and UPS Car Audio Amplifiers and Sound Device Systems .161(4.1)MAX .071(1.8) .055(1.4) .055(1.4) .039(1.0) .035(0.9) .011(0.3) Mechanical Data Case: Fully Isolated Molding TO-220F Full Plastic Pak Epoxy: UL 94V-0 rate flame retardant Terminals: Solderable per MIL-STD-202 method 208 Polarity: As marked on diode body Mounting position: Any Weight: 2.0 gram approximately .1 .1 (2.55) (2.55) .032(.8) MAX Case Case Case .114(2.9) .098(2.5) .543(13.8) .512(13.0) Application Doubler Tandem Polarity Suffix "CTD" Negative Positive Common Cathode Common Anode Suffix "CT" Suffix "CTR" Case Series Tandem Polarity Suffix "CTS" MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA=25℃ unless otherwise noted) MBRF MBRF MBRF MBRF MBRF MBRF MBRF MBRF PARAMETER SYMBOL 3035 3045 3050 3060 3090 30100 30150 30200 UNIT CTR CTR CTR CTR CTR CTR CTR CTR Maximum repetitive peak reverse voltage VRRM 35 45 50 60 90 100 150 200 Maximum RMS voltage VRMS 24 31 35 42 63 70 105 140 V Maximum DC blocking voltage VDC 35 45 50 60 90 100 150 200 V Maximum average forward rectified current IF(AV) 30 A Peak repetitive forward current (Rated VR, Square wave, 20KHz) IFRM 30 A Peak forward surge current, 8.3 ms single half sine-wave superimposed on rated load IFSM 200 A Peak repetitive reverse surge current (Note 1) IRRM Maximum instantaneous forward voltage (Note 2) IF=15A, TJ=25℃ IF=15A, TJ=125℃ IF=30A, TJ=25℃ IF=30A, TJ=125℃ Maximum reverse current @ rated VR TJ=25 ℃ TJ=125 ℃ VF IR 1 0.5 A 0.70 0.75 0.84 0.95 0.60 0.65 0.70 0.80 0.82 0.90 0.94 1.05 0.73 0.78 0.82 0.92 0.2 20 10 15 V V mA Voltage rate of change (Rated VR) dV/dt 10000 Typical thermal resistance RθJC 4 V/μs ℃/W TJ - 55 to +150 ℃ TSTG - 55 to +150 ℃ Operating junction temperature range Storage temperature range Note 1: tp = 2.0 μs, 1.0KHz Note 2: Pulse test with PW=300μs, 1% duty cycle Rev.07C © 2006 Thinki Semiconductor Co., Ltd. Page 1/2 http://www.thinkisemi.com/ ® MBRF3035CTR thru MBRF30200CTR RATINGS AND CHARACTERISTICS CURVES (TA=25℃ unless otherwise noted) FIG.1 FORWARD CURRENT DERATING CURVE AVERAGE FORWARD A CURRENT (A) 30 25 20 15 10 RESISTIVE OR INDUCTIVELOAD WITH HEATSINK 5 0 50 60 70 80 90 100 110 120 130 140 150 FIG. 2 MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT PER LEG PEAK FORWARD SURGE CURRENT (A) 35 225 8.3ms Single Half Sine Wave JEDEC Method 200 175 150 125 100 75 50 1 10 CASE TEMPERATURE (oC) FIG. 3 TYPICAL FORWARD CHARACTERISTICS PER LEG FIG. 4 TYPICAL REVERSE CHARACTERISTICS PER LEG 100 100 TJ=125℃ MBRF3035CTR-MBRF3045CTR 1 MBRF3050CTR-MBRF3060CTR MBRF3090CTR-MBRF30100CTR 0.1 MBRF30150CTR-MBRF30200CTR 0.01 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 INSTANTANEOUS REVERSE CURRENT (mA) INSTANTANEOUS FORWARD CURRENT (A) Pulse Width=300μs 1% Duty Cycle 10 10 TJ=75℃ 1 0.1 TJ=25℃ 0.01 MBRF3035CTR-MBRF3045CTR MBRF3050CTR-MBRF30200CTR 0.001 0 20 FIG. 5 TYPICAL JUNCTION CAPACITANCE PER LEG 10000 f=1.0MHz MBRF3035CTR-MBRF3045CTR Vsig=50mVp-p MBRF3050CTR-MBRF3060CTR MBRF3090CTR-MBRF30200CTR 10 Rev.07C © 2006 Thinki Semiconductor Co., Ltd. 80 100 120 140 FIG. 6 TYPICAL TRANSIENT THERMAL IMPEDANCE PER LEG 100 1 60 100 1000 REVERSE VOLTAGE (V) 40 PERCENT OF RATED PEAK REVERSE VOLTAGE (%) TRANSIENT THERMAL IMPEDANCE (℃/W) JUNCTION CAPACITANCE (pF) A FORWARD VOLTAGE (V) 0.1 100 NUMBER OF CYCLES AT 60 Hz 100 10 1 0.1 0.01 0.1 1 10 100 T-PULSE DURATION(s) Page 2/2 http://www.thinkisemi.com/